P1003EVG

P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

-30V 10.5mΩ @VGS = -10V -13A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±25
TA = 25 °C -13
Continuous Drain Current ID
TA = 70 °C -9
1
A
Pulsed Drain Current IDM -50
Avalanche Current IAS -49
Avalanche Energy L = 0.1mH EAS 120 mJ
TA = 25 °C 2.5
Power Dissipation PD W
TA = 70 °C 1.6
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 25
°C / W
Junction-to-Ambient RqJA 50
1
Pulse width limited by maximum junction temperature.

Ver 1.0 1 2012/4/16

P1003EVG
P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -1.0 -1.5 -3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA
VDS = -24V, VGS = 0V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = -20V, VGS = 0V , TJ = 125 °C -10
On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V -50 A
VGS = -4.5V, ID = -10A 13 16
Drain-Source On-State
RDS(ON) VGS = -6.5V, ID = -13A 10.5 12 mΩ
Resistance1
VGS = -10V, ID = -13A 9 10.5
1 gfs VDS = -10V, ID = -13A
Forward Transconductance 29 S
DYNAMIC
Input Capacitance Ciss 4200
Output Capacitance Coss VGS = 0V, VDS = -15V, f = 1MHz 1218 pF
Reverse Transfer Capacitance Crss 504
2 Qg
Total Gate Charge 42
2
VDS = 0.5V(BR)DSS, VGS = -10V,
Gate-Source Charge Qgs 12.6 nC
ID = -13A
2 Qgd
Gate-Drain Charge 15.4
2 td(on)
Turn-On Delay Time 16.8
2 tr
Rise Time VDS = -15V, 22.4
nS
Turn-Off Delay Time 2 td(off) ID@ -1A, VGS = -10V, RGS = 6Ω 70
Fall Time2 tf 140
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS -2.1 A
1 VSD IF = IS, VGS = 0V
Forward Voltage -1.2 V
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/4/16

P1003EVG
P-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/16

P1003EVG
P-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/16

P1003EVG
P-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/16