Documente Academic
Documente Profesional
Documente Cultură
SOIC-8
1
Preliminary Datasheet
Pin Configuration
M Package
(SOIC-8)
BS 1 8 SS
IN 2 7 EN
SW 3 6 COMP
GND 4 5 FB
Pin Description
Pin Number Pin Name Function
Bootstrap pin. A bootstrap capacitor is connected between the BS pin
1 BS and SW pin. The voltage across the bootstrap capacitor drives the
internal high-side power MOSFET
2 Supply power input pin. A capacitor should be connected between the
IN
IN pin and GND pin to keep the input voltage constant
3 Power switch output pin. This pin is connected to the inductor and
SW
bootstrap capacitor
4 GND Ground pin
Feedback pin. This pin is connected to an external resistor divider to
program the system output voltage. When the FB pin voltage exceeds
5 FB 1.1V, the over voltage protection is triggered. When the FB pin
voltage is below 0.3V, the oscillator frequency is lowered to realize
short circuit protection
Compensation pin. This pin is the output of the transconductance
error amplifier and the input to the current comparator. It is used to
6 COMP compensate the control loop. Connect a series RC network from this
pin to GND. In some cases, an additional capacitor from this pin to
GND pin is required
Control input pin. EN is a digital input that turns the regulator on or
7 EN off. Drive EN high/low to turn on/off the regulator. Pull up with
100kΩ resistor for automatic startup
Soft-start control input pin. SS controls the soft-start period. Connect
8 a capacitor from SS to GND to set the soft-start period. A 0.1µF
SS
capacitor sets the soft-start period to 15ms. To disable the soft-start
feature, leave SS unconnected
2
Preliminary Datasheet
Ordering Information
AP3502E -
Temperature
Package Part Number Marking ID Packing Type
Range
AP3502EM-G1 3502EM-G1 Tube
SOIC-8 -40 to 85°C
AP3502EMTR-G1 3502EM-G1 Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
3
Preliminary Datasheet
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
4
Preliminary Datasheet
Electrical Characteristics
TA=25ºC, VIN=VEN=12V, VOUT=3.3V, unless otherwise specified.
Parameter Symbol Conditions Min Typ Max Unit
SUPPLY VOLTAGE (IN PIN)
Input Voltage VIN 4.5 18 V
Quiescent Current IQ VFB=1V, VEN=3V 1.2 1.4 mA
Shutdown Supply Current ISHDN VEN=0V 0.1 10 µA
UNDER VOLTAGE LOCKOUT
Input UVLO Threshold VUVLO VIN Rising 3.65 4.00 4.25 V
Input UVLO Hysteresis VHYS 200 mV
ENABLE (EN PIN)
EN Shutdown Threshold Voltage 1.1 1.5 2 V
EN1Shutdown1Threshold1Voltage1Hystere-
350 mV
sis (Note 3)
EN Lockout Threshold Voltage 2.2 2.5 2.7 V
EN Lockout Hysteresis 210 mV
VOLTAGE REFERENCE (FB PIN)
Feedback Voltage VFB 0.907 0.925 0.943 V
Feedback Over Voltage Threshold VFBOV 1.1 V
Feedback Bias Current IFB VFB=1V -0.1 0.1 µA
MOSFET
High-side Switch On-resistance (Note 2) RDSONH ISW=0.2A/0.7A 100 mΩ
Low-side Switch On-resistance (Note 2) RDSONL ISW=-0.2A/-0.7A 100 mΩ
CURRENT LIMIT
High-side Switch Leakage Current ILEAKH VIN=18V,VEN=VSW=0V 0.1 10 µA
High-side Switch Current Limit ILIMH 2.7 3.5 A
Low-side Switch Current Limit ILIML Drain to Source 0 mA
SWITCHING REGULATOR
Oscillator Frequency fOSC1 280 340 400 kHz
Short Circuit Oscillator Frequency fOSC2 90 kHz
Max. Duty Cycle DMAX VFB=0.85V 90 %
Min. Duty Cycle DMIN VFB=1V 0 %
ERROR AMPLIFIER
Error Amplifier Voltage Gain (Note 3) AEA 400 V/V
Error Amplifier Transconductance GEA 800 µA/V
COMP to Current Sense Transconductance GCS 3.5 A/V
THERMAL SHUTDOWN
Thermal Shutdown (Note 3) TOTSD 160 ºC
Thermal Shutdown Hysteresis (Note 3) THYS 30 ºC
SOFT START (SS PIN)
Soft-start Time (Note 3) tSS C4=0.1µF,IOUT=500mA 15 ms
Soft-start Current 5 µA
VSW1 - VSW2
Note 2: RDSON=
ISW1 - ISW2
Note 3: Not tested, guaranteed by design.
5
Preliminary Datasheet
1.4
100
90
1.3
80
60
50
1.1
40
VOUT=3.3V,L=10µH TA=25oC
30 VIN=5V
1.0
VIN=12V
20
10
0.9
0.01 0.1 1 10
-50 -25 0 25 50 75 100 125 150
Load Current (A) o
Temperature ( C)
Figure 4. Efficiency vs. Load Current Figure 5. Quiescent Current vs. Temperature
0.94
3.6
3.5
0.93
Feedback Voltage (V)
3.4
Output Voltage (V)
0.92 3.3
3.2
0.91
3.1
3.0
0.90
0.0 0.4 0.8 1.2 1.6 2.0 2.4
-50 -25 0 25 50 75 100 125 150
o
Load Current (A)
Temperature ( C)
Figure 6. Feedback Voltage vs. Temperature Figure 7. Output Voltage vs. Load Current
6
Preliminary Datasheet
3.6 4.0
3.6
3.5
3.2
2.8
3.3
2.4
3.2
2.0
VOUT=3.3V,L=10µH
3.1 1.6
3.0 1.2
4 8 12 16 20 4 8 12 16 20
Input Voltage (V)
Input Voltage (V)
VIN(AC)
500mV/div
VOUT (AC)
100mV/div
VOUT (AC)
20mV/div
IL
1A/div
IOUT
VSW
1A/div
10V/div
Figure 10. Output Ripple (IOUT=2A) Figure 11. Load Transient (IOUT=1 to 2A)
7
Preliminary Datasheet
VEN
VEN
2V/div
2V/div
VSS VSS
2V/div 2V/div
VOUT VOUT
2V/div 2V/div
IL IL
1A/div 1A/div
Figure 12. Enable Turn-on Characteristic Figure 13. Enable Turn-off Characteristic
(VIN=12V, VEN=3.3V, VOUT=3.3V, IOUT=2A) (VIN=12V, VEN=3.3V, VOUT=3.3V, IOUT=2A)
VOUT
2V/div
VOUT
2V/div
VSW
10V/div VSW
10V/div
VSS VSS
1V/div 1V/div
IL IL
2A/div 2A/div
Figure 14. Short Circuit Protection (IOUT=2A) Figure 15. Short Circuit Recovery (IOUT=2A)
8
Preliminary Datasheet
Typical Application
Input Voltage=12V
R4
C11
100k
10µF/25V
1 8
BS SS
AP3502E
C5
2 7 0.1µF
C4 IN EN
L 10µH 10nF C6
Output Voltage=3.3V Optional
3 6
SW COMP
C3 R3
4 5 4.7nF 13k
GND FB
R2 10k
C21 C22
22µF/25V 22µF/25V
D1 R1
Optional 26.1k
9
Preliminary Datasheet
Mechanical Dimensions
4.700(0.185) 0.320(0.013)
5.100(0.201) 1.350(0.053)
7° 1.750(0.069)
8°
7° 8°
0.675(0.027)
D
0.725(0.029) 5.800(0.228)
1.270(0.050) 6.200(0.244)
TYP
D
20:1
0.100(0.004) 0.800(0.031)
R0.150(0.006)
0.300(0.012)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.190(0.007) 1°
0.330(0.013) 0.250(0.010) 5°
0.510(0.020)
0.900(0.035) R0.150(0.006)
0.450(0.017)
0.800(0.031)
10
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT NOTICE
BCD Semiconductor
BCD Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products oror specifi-
specifi-
cations herein.
cations herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey anyany license
license under
under its
its patent
patent rights
rights or
or
other rights
other rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
MAIN SITE
- Headquarters
BCD Semiconductor Manufacturing Limited - Wafer
BCD FabSemiconductor Manufacturing Limited
BCD Semiconductor
- Wafer Fab Manufacturing Limited Shanghai SIM-BCD
- IC Design GroupSemiconductor Manufacturing Co., Ltd.
No. 1600, Zi
Shanghai Xing Road,
SIM-BCD Shanghai ZiZhu
Semiconductor Science-basedLimited
Manufacturing Industrial Park, 200241, China 800 Yi Shan Road,
Advanced Shanghai
Analog 200233,
Circuits China Corporation
(Shanghai)
Tel:
800,+86-21-24162266, Fax: +86-21-24162277
Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491,YiFax:
8F, Zone B, 900, Shan+86-21-5450 0008200233, China
Road, Shanghai
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL Taiwan Office USA Office
Shanghai
Shenzhen SIM-BCD
Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan
Semiconductor
Office (Taiwan) Company Limited BCD Office
USA Semiconductor Corp.
Unit A Room
Shanghai 1203, Skyworth
SIM-BCD Bldg., Gaoxin
Semiconductor Ave.1.S., Nanshan
Manufacturing Co., Ltd.District,
Shenzhen Shenzhen,
Office 4F, 298-1,
BCDRui Guang Road,(Taiwan)
Semiconductor Nei-Hu District,
Company Taipei,
Limited 30920Semiconductor
BCD Huntwood Ave.Corporation
Hayward,
China
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, CA 94544,
30920 USA Ave. Hayward,
Huntwood
Tel: +86-755-8826 7951 Tel: +886-2-2656
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan 2808 Tel : +1-510-324-2988
CA 94544, U.S.A
Fax: +86-755-88267951
Tel: +86-755-8826 7865 Fax: +886-2-2656 28062808
Tel: +886-2-2656 Fax:: +1-510-324-2988
Tel +1-510-324-2788
Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 Fax: +1-510-324-2788