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Campus Baghdad-ul-Jadeed

Faculty Engineering
Department Electronic Engineering
Program MS
Semester 2
Section A
Course ID EE-
Course Title Digital Integrated Circuits for Communication

Part One
PALs usually contain ___________connected to the ____________, to implement
sequential circuits.
A. Latches, OR gates
B. Flip-Flop, OR gates
C. Flip-Flop, AND Gates
D. Latches, AND Gates
ANSWER: C
The ratio of the change in drain current to the change in gate voltage over a defined,
arbitrarily small interval on the drain current versus gate voltage curve is known as.
A. Trans-resistance
B. Trans-conductance
C. Trans-capacitance
D. Trans-reductance
ANSWER: B
SRAM, DRAM, Flash, and EEPROM are all.
A. Magneto-optical storage devices
B. Semiconductor storage devices
C. Magnetic storage devices
D. Optical storage devices
ANSWER: B
QAM stands for.
A. Quadrature analysis method
B. Quadrature Amplitude method
C. Quasi-amplitude modulation
D. Quadrature Antenna modulation
ANSWER: B
Types of modulation in which a parameter of a sine-wave signal is varied by a digital.
A. PAM, PWM, PPM
B. QAM, PAM, ASK,
C. FSK, PSK, PPM
D. FSK, ASK, PSK
ANSWER: D

The main advantage of ECL over TTL or CMOS is.


A. ECL is less expensive
B. ECL consumes less power
C. ECL is available in a greater variety of circuit types
D. ECL is faster
ANSWER: C

We use ____________ ICs in computers.


A. Digital
B. Linear
C. Both digital and linear
D. None of the above

ANSWER: A

Fan-in and fan-out refer to the -------------- of a logic gate.


A. Connectivity
B. output
C. input
D. All of the above
ANSWER: A

Semiconductor materials are useful because.


A. they are having no impurity
B. little impurity is added into them to increase their conductivity
C. a larger amount of impurity is added into them to increase their conductivity
D. none of above

ANSWER: B

What is the disadvantage of integrated circuit.


A. Parameter within the IC cannot be modified
B. Low power requirement
C. ICs are considered to use minimum number of external connections
D. None of the mentioned
ANSWER: A
ECL stands for.
A. Emitter coupled logic
B. Enhanced coupled logic
C. Erasable couple logic
D. None of these
ANSWER: A

What is the advantage of Hybrid Integrated Circuit.


A. Miniaturized circuits are made of individual components
B. Insulate components by protection
C. Circuit designer can choose the component value
D. All of the mentioned
ANSWER: D

Storage which stores or retains data after power off is called.

A. Volatile

B. non-volatile

C. Sequential

D. Direct

ANSWER: B

A memory less system is.


A. Causal
B. Not causal
C. Both a & b
D. None of above
ANSWER: A

ICs used for industrial application will have temperature range from.
A. -55o to +85oc
B. 90o to 155oc
C. 10o to 100oc
D. -20o to +85oc
ANSWER: D
What is the reason for using Lateral pnp transistor in Integrated Circuits.
A. Requires simple process control
B. Simultaneous fabrication of pnp and npn transistors
C. Provide good isolation
D. Miniaturization and cost reduction
ANSWER: B

Which method is used in the fabrication of pnp transistor.


A. Vertical substrate pnp
B. Triple diffused pnp
C. Lateral pnp
D. All of the mentioned
ANSWER: D

The diffusion of collector impurities in npn transistor should be small because.


A. No additional diffusion or masking steps required
B. Bandwidth is controlled by lateral diffusion of p-type impurity
C. Collector need not be kept at negative potential
D. None of the mentioned
ANSWER: D

Which transistor is best suitable to achieve very fast switching in digital circuits.
A. Lateral pnp transistor
B. Schottky transistor
C. Multi-emitter transistor
D. NPN transistor
ANSWER: B

Frequency shift keying is used mostly in.


A. amplitude modulation
B. frequency modulation
C. both amplitude and frequency modulation
D. neither amplitude nor frequency modulation
ANSWER: B

The parameter hie stands for input impedance in.


A. CB arrangement with output shorted
B. CC arrangement with output shorted
C. CE arrangement with output shorted
D. None of the above
ANSWER: C

The h parameter approach gives correct results for.


A. Large signals only
B. Small signals only
C. Both small and large signals
D. None of the above
ANSWER: B

There are __________ parameters of a transistor.


A. Two
B. Four
C. Three
D. None of the above

ANSWER: B

Hybrid means.
A. Mixed
B. Single
C. Unique
D. None of the above

ANSWER: A

If the operating point changes, the h parameters of transistor.


A. Also change
B. Do not change
C. May or may not change
D. None of the above

ANSWER: A

What is Barkhausen criterion for oscillation.


A. Aß > 1
B. Aß < 1
C. Aß = 1
D. Aß ≠ 1
ANSWER: C

At what condition the output signal can be continuously obtained from input signal.
A. When the product of input voltage and feedback voltage is equal to 1
B. When the product of amplifier gain and transfer ratio is equal to 1
C. When the product of feedback voltage and transfer ratio is equal to 1
D. When the product of amplifier gain and input voltage is equal to 1
ANSWER: B

Which circuit is used to replace inductor in IC components.


A. RC active network
B. PN-junction diode
C. LC active network
D. None of the mentioned
ANSWER: A

An oscillator is a type of.


A. Feedforward amplifier
B. Feedback amplifier
C. Waveform amplifier
D. RC amplifier
ANSWER: B

How many op-amps will be present in a typical op-amp package.


A. Three
B. Four
C. Five
D. Nine
ANSWER: B

What is the condition to achieve oscillations.


A. |Aß|=1
B. ∠Aß=0o
C. ∠Aß=multiples of 2π
D. All the mentioned
ANSWER: D

To obtain a faster slew rate the op-amp should have.


A. High current and large compensating capacitor
B. Small compensating capacitor
C. High current or small compensating capacitor
D. Low current or large compensating capacitor
ANSWER: C
The amount of power that a chip dissipates per unit area is called its.
A. Power charge
B. Power surface
C. Power density
D. Power dissipation
ANSWER: C

Analog circuits use an electrical power source to achieve the designer’s goals are known
as.
A. Active analog circuits
B. Passive analog circuits
C. Accurate analog circuits
D. Continuous analog circuits
ANSWER: A

In saturation region, MOSFET drive.


A. low current
B. high current
C. no current
D. infinite current
ANSWER: A

Stray capacitance is also name as.


A. fixed capacitance
B. parasitic capacitance
C. electrolyte capacitance
D. variable capacitance
ANSWER: B

The n-type Metal oxide Semiconductor Field Effect Transistor (MOSFET) consist of a
source and a.
A. drain
B. body
C. buried oxide
D. emitter
ANSWER: A
Which of the given below is not a digital state.
A. 0 or 1.
B. On or off
C. True or false
D. 0 or infinite
ANSWER: D

Level in which design is implemented using switches/transistor is.


A. Behavioral level
B. Data flow level
C. Gate level
D. Switch level
ANSWER: D

Digital circuits are less susceptible to noise or degradation in quality than.


A. State Circuit
B. Analog circuits
C. Discrete circuits
D. Power circuits
ANSWER: B

In TTL, amplifying function is performed by.


A. Diodes
B. Transistors
C. Resistors
D. capacitors
ANSWER: B

Technique where many circuit components and wiring that connects them are
manufactured simultaneously on compact chip (die) is termed as.
A. Integrated circuit
B. Analog circuits
C. Discrete circuits
D. Power circuits
ANSWER: A
Intrinsic semiconductors are also known as.
A. Doped semiconductor
B. Undoped semiconductor
C. Doped conductor
D. Under depth semiconductor
ANSWER: B

To obtain high rate of accuracy in comparator.


A. Input offset
B. High voltage gain
C. High CMRR
D. All of the mentioned
ow
ANSWER: D

Depending on the value of input and reference voltage a comparator can be named as.
A. Voltage follower
B. Digital to analog converter
C. Schmitt trigger
D. Voltage level detector
ANSWER: D

Define polarity of the output offset voltage in a practical op-amp.


A. Positive polarity
B. Negative polarity
C. Positive or negative polarity
D. None of the mentioned
ANSWER: C

What will the condition of op-amp, before applying any external input.
A. Compensated
B. Biased
C. Balanced
D. Zero
ANSWER: C

How are components array available in IC form.


A. Array of silicon wafer
B. Group of isolated transistor, diodes and resistor
C. Array of individual stages of differential and cascade amplifier
D. Group of gates logic circuits arranged in array format
ANSWER: B

Miniaturization of components with superior performance can be obtained in.


A. Integrated circuits
B. Discrete circuits
C. Both integrated and discrete circuits
D. None of the mentioned
ANSWER: A

In CMOS logic circuit the n-MOS transistor acts as.


A. Load
B. Pull up network
C. Pull down network
D. Not used in CMOS circuits
ANSWER: C

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