DISCRETE SEMICONDUCTORS

DATA SHEET

BFR92
NPN 5 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

DESCRIPTION PINNING
NPN transistor in a plastic SOT23 PIN DESCRIPTION
envelope primarily intended for use in
Code: P1p fpage 3
RF wideband amplifiers and
oscillators. The transistor features 1 base
low intermodulation distortion and 2 emitter
high power gain; due to its very high 3 collector
transition frequency, it also has 1 2
excellent wideband properties and Top view MSB003
low noise up to high frequencies.
PNP complement is BFT92.
Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage open base − 15 V
IC DC collector current − 25 mA
Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW
fT transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz; 5 − GHz
Tj = 25 °C
Cre feedback capacitance IC = 2 mA; VCE = 10 V; f = 1 MHz 0.4 − pF
GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 500 MHz; 18 − dB
Tamb = 25 °C
F noise figure IC = 2 mA; VCE = 10 V; f = 500 MHz; 2.4 − dB
Tamb = 25 °C; Zs = opt.
Vo output voltage dim = −60 dB; IC = 14 mA; VCE = 10 V; 150 − mV
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 493.25 MHz

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage open base − 15 V
VEBO emitter-base voltage open collector − 2 V
IC DC collector current − 25 mA
Ptot total power dissipation up to Ts = 95 °C; note 1 − 300 mW
Tstg storage temperature −65 150 °C
Tj junction temperature − 175 °C

Note
1. Ts is the temperature at the soldering point of the collector tab.

September 1995 2
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

Rth j-s thermal resistance from junction to up to Ts = 95 °C; note 1 260 K/W
soldering point

Note
1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 10 V − − 50 nA
hFE DC current gain IC = 14 mA; VCE = 10 V 40 90 −
fT transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz − 5 − GHz
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.75 − pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 0.8 − pF
Cre feedback capacitance IC = 2 mA; VCE = 10 V; f = 1 MHz; − 0.4 − pF
Tamb = 25 °C
GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; − 18 − dB
(note 1) f = 500 MHz; Tamb = 25 °C
F noise figure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz; − 2.4 − dB
Tamb = 25 °C; Zs = opt.
Vo output voltage note 3 − 150 − mV

Notes 2
S 21
 2  2
- dḂ
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------
 1 – S 11   1 – S 22 
2. Crystal mounted in a SOT37 envelope (BFR90).
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.

September 1995 3
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

MEA425 - 1
400
handbook, halfpage
P
tot
handbook, halfpage 24 V (mW)

820 Ω 300
L3
390 Ω 3.9 kΩ

300 Ω
200
L2 650 pF
680 pF 75 Ω
L1 output
680 pF
75 Ω
DUT
input 100

16 Ω

MEA446
0
0 50 100 150 200
Ts ( o C)
L2 = L3 = 5 µH Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.

Fig.2 Intermodulation distortion test circuit. Fig.3 Power derating curve.

MEA428
MCD074
120 1
handbook, halfpage handbook, halfpage
Cc
(pF)
h FE 0.8

80
0.6

0.4
40

0.2

0 0
0 10 20 30 0 10 20
I C (mA) V CB (V)

VCE = 10 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C.

Fig.4 DC current gain as a function of collector Fig.5 Collector capacitance as a function of

current. collector-base voltage.

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Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

MEA444 MEA427
6 30
handbook, halfpage handbook, halfpage

fT gain
(GHz) (dB)

4 20

G UM

2 10
I S12 I 2

0 0
2
0 10 20
I C (mA)
30 10 10 3 f (MHz) 104

VCE = 10 V; f = 500 MHz; Tj = 25 °C. IC = 14 mA; VCE = 10 V; Tamb = 25 °C.

Fig.6 Transition frequency as a function of Fig.7 Gain as a function of frequency.

collector current.

MEA465 MEA424
6 5
handbook, halfpage handbook, halfpage
F
F
(dB) (dB)
5
4

4
3

2
2

1
1

0 0
10 –1 1 f (GHz) 10 0 5 10 15 20
I C (mA)

IC = 2 mA; VCE = 10 V; Tamb = 25 °C; Zs = opt. VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.

Fig.8 Minimum noise figure as a function of Fig.9 Minimum noise figure as a function of
frequency. collector current.

September 1995 5
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

MEA426
handbook, halfpage

40
BS
(mS)
20
F = 5 dB
4.5
0 4
3.5
3
2.4
20

40

0 20 40 60 80 100
G S (mS)

IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C.

Fig.10 Noise circle figure.

September 1995 6
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

handbook, full pagewidth 1

0.5 2

0.2 5

10
+j
0.2 0.5 1 2 5 10
0
1000 MHz
∞
–j 800
500 10

200
0.2 5

0.5 2

MEA429
1
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.11 Common emitter input reflection coefficient (S11).

handbook, full pagewidth 90°

120° 60°

200
150° 30°

500
800
+ϕ
1000 MHz
180° 0°
20 12 4
−ϕ

150° 30°

120° 60°
MEA431
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.

Fig.12 Common emitter forward transmission coefficient (S21).

September 1995 7
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

handbook, full pagewidth 90°

120° 60°

1000 MHz

150° 800 30°

500

200
+ϕ
180° 0°
0.05 0.10 0.15
−ϕ

150° 30°

120° 60°
MEA432
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.

Fig.13 Common emitter reverse transmission coefficient (S12).

handbook, full pagewidth 1

0.5 2

0.2 5

10
+j
0.2 0.5 1 2 5 10
0 ∞
–j
800 500 10

1000 MHz 200

0.2 5

0.5 2

MEA430
1
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.14 Common emitter output reflection coefficient (S22).

September 1995 8
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23

D B E A X

HE v M A

A1

1 2 c

e1 bp w M B Lp

e
detail X

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT23 97-02-28

September 1995 9
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR92

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1995 10
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