PROFET® Data Sheet BTS 443 P

Smart Highside Power Switch

Reversave Product Summary
• Reverse battery protection by self turn on of Vbb(on) 5.0 ... 36 V
Operating voltage
power MOSFET
On-state resistance RON 16 mΩ
Features Load current (ISO) IL(ISO) 25 A
• Short circuit protection
• Current limitation Current limitation IL(SCr) 65 A
• Overload protection Package
• Thermal shutdown TO-252-5-1
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for
charged inductive loads)
• Very low standby current
• Fast demagnetisation of inductive loads
• Electrostatic discharge (ESD) protection
• Optimized static electromagnetic compatibility (EMC)

Diagnostic Function
• Proportional load current sense (with defined fault signal during thermal shutdown)

Application
• Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
• All types of resistive, capacitive and inductive loads (no PWM with inductive loads)
• Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.

3 & Tab
+ V bb
R bb
Voltage Overvoltage Current Gate
source protection limit protection

OUT 1, 5
Limit for
Voltage Charge pump unclamped IL
sensor ind. loads
Level shifter Current
Rectifier Output Sense
2 IN Voltage Load
ESD Logic detection

I IN
Temperature
sensor

I IS 
IS PROFET
Load GND
4
VIN
R
V IS IS

Logic GND

Infineon Technologies AG Page 1 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Pin Symbol Function

1 OUT O Output to the load. The pin 1 and 5 must be shorted with each
other especially in high current applications!*)
2 IN I Input, activates the power switch in case of short to ground

Tab/(3) Vbb + Positive power supply voltage, the tab is shorted to this pin.

4 IS S Diagnostic feedback providing a sense current proportional to the load

current; high current on failure (see Truth Table on page 6)
5 OUT O Output to the load. The pin 1 and 5 must be shorted with each
other especially in high current applications!*)

*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 36 V
Supply voltage for full short circuit protection Vbb 241) V
(see also diagram on page 9) Tj=-40...150 °C:
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V VLoad dump2) 60 V
RI= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC) TC ≤ 25°C Ptot 42 W
Inductive load switch-off energy dissipation,
single pulse U=12V, I=10A, L=3mH Tj=150 °C: EAS 0.15 J
Electrostatic discharge capability (ESD) VESD 4.0 kV
(Human Body Model)
acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Current through input pin (DC) IIN +15, -100 mA
Current through current sense pin (DC) IIS +15, -100
see internal circuit diagrams page 7

1) Short circuit is tested with 100mΩ and 20µH

2) VLoad dump is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Infineon Technologies AG Page 2 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case: RthJC3) -- -- 1.5 K/W
junction - ambient (free air): RthJA -- 80 --
SMD version, device on PCB4): -- 45 --

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to pin 1,5)
VIN= 0, IL = 5 A Tj=25 °C: RON -- 13 16 mΩ
Tj=150 °C: 25 31
Output voltage drop limitation at small load VON(NL) -- 50 -- mV
currents (Tab to pin 1,5) Tj=-40...150 °C:
Nominal load current (Tab to pin 1,5) A
ISO Proposal: TC=85°C, VON≤0.5V, Tj≤150°C IL(ISO) 21 25 --
SMD 4): TA=85°C, VON≤0.5V, Tj≤150°C IL(nom) 6.2 7.6 --
Turn-on time IIN to 90% VOUT: ton 150 -- 410 µs
Turn-off time IIN to 10% VOUT: toff 70 -- 410
RL = 2,5Ω, Tj=-40...150 °C
Slew rate on dV /dton 0.1 -- 1 V/µs
10 to 30% VOUT, RL = 2.5 Ω, Tj=-40...150 °C
Slew rate off -dV/dtoff 0.1 -- 1 V/µs
70 to 40% VOUT, RL = 2.5 Ω, Tj=-40...150 °C

3) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.

Infineon Technologies AG Page 3 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Parameter and Conditions Symbol Values Unit

at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified min typ max

Operating Parameters
Operating voltage (VIN=0V) Vbb(on) 5.0 -- 36 V
Undervoltage shutdown 5) VbIN(u) 1.5 3.0 4.5 V
Undervoltage restart of charge pump (VIN=0V) Vbb(ucp) 3.0 4.5 6.0 V

Overvoltage protection 6) VZ,IN 61 68 -- V

Ibb=15 mA
Standby current Tj=-40...+25°C: Ibb(off) -- 2 5 µA
IIN=0 Tj=150°C: -- 4 8

Protection Functions 7)
Short circuit current limit (Tab to pin 1,5)
VON=8V, time until limitation max. 300µs
Tj =-40°C: IL(SC) 35 75 110 A
Tj =25°C: 35 65 110
Tj =+150°C: 35 65 125
Repetitive short circuit current limit, Tj = Tjt IL(SCr) -- 65 -- A
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage) VON(CL) 38 42 48 V
IL= 40 mA 8)
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K

Reverse Battery
Reverse battery voltage -Vbb -- -- 20 V
On-state resistance (pin 1,5 to pin 3)
Vbb= - 8V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C: RON(rev) -- -- 22 mΩ
Vbb= -12V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C: -- 16 19
Tj=150 °C: 25 32
Integrated resistor in Vbb line Rbb -- 200 -- Ω

5) VbIN=Vbb-VIN see diagram on page 11.

6) see also VON(CL) in circuit diagram on page 7.
7) Integrated protection functions are designed to prevent IC destruction under fault condition described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
for continuous repetitive operation.
8) see also page 12.

Infineon Technologies AG Page 4 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Diagnostic Characteristics
Current sense ratio, static on-condition kILIS -- 8200 --
kILIS = IL : IIS
VON<1.5 V, VIS<VOUT- 5 V, VbIN>4.5 V 9)
IL = 20A, Tj = -40°C: 7400 8300 9100
Tj = +25°C: 7500 8300 9100
Tj = +150°C: 7500 8200 8800
IL = 5A, Tj = -40°C: 6800 8300 9700
Tj = +25°C: 7200 8300 9300
Tj = +150°C: 7200 8200 9000
IL = 2.5A, Tj = -40°C: 6800 8500 10000
Tj = +25°C: 6800 8500 9800
Tj = +150°C: 6800 8100 9200
IL = 1A, Tj = -40°C: 6800 8600 10500
Tj = +25°C: 6800 8600 10500
Tj = +150°C: 6800 8600 10500
IIN = 0 (e.g. during de-energising of inductive loads): -- n.a. --
Sense current under fault conditions;
VDS>1.5V, typ. Tj= -40...+150°C: IIS,fault 2.5 4 -- mA
Fault-Sense signal delay after negative input slope tdelay(fault) 0.8 ms
Current sense leakage current
IIN = 0: IIS(LL) -- -- 0.5 µA
VIN = 0, IL = 0: IIS(LH) -- 4 12
Current sense settling time to IIS static±10% after
positive input slope, IL = 0 20 A 10) tson(IS) -- -- 400 µs
Tj= -40...+150°C:
Overvoltage protection
Ibb = 15 mA Tj = -40...+150°C: VbIS(Z) 61 68 -- V

Input
Required current capability of input switch IIN(on) -- 0.7 1.2 mA
Tj =-40..+150°C:
Maximum input current for turn-off Tj =-40..+150°C: IIN(off) -- -- 50 µA

9) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation.
10) not subject to production test, specified by design

Infineon Technologies AG Page 5 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Truth Table
Input Output Current
Current Sense
level level IIS
Normal L L 0
operation H H nominal
Overload L L 0
H H IISfault
Short circuit to GND L L 0
H L IISfault
Overtemperature L L 0
H L IISfault
Short circuit to Vbb L H 0
H H <nominal11
Open load L Z 0
H H 0

L = "Low" Level Z = high impedance, potential depends on external circuit

H = "High" Level

Terms
I bb
3
VbIN
Vbb VON

I
L
V IN OUT
bb 2 1,5
PROFET
RIN
IS
V VbIS 4 I IS
IN
I DS V
IN OUT

V R IS
IS

Two or more devices can easily be connected in

parallel to increase load current capability.

11) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.

Infineon Technologies AG Page 6 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Input circuit (ESD protection) Inductive and overvoltage output clamp

+ Vbb
V bb
VZ1

R bb V ON
V ZD
Z,IN
V bIN
IN OUT

PROFET
I
IN

VON is clamped to VON(Cl) = 42 V typ.

V IN

ESD-Zener diode: 68 V typ., max 15 mA;

Current sense output Overvoltage protection of logic part

Normal operation

+ Vbb
Vbb
Rbb ZD
V V Z,IN V R bb
IIS,fault Z,IS Z,IS

R IN
IS IN
Logic
IIS V OUT
V
IS
R IS PROFET
IS

R IS R V Z,VIS
V
VZ,IS = 68 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be Signal GND

only driven by the internal circuit as long as Rbb = 200 Ω typ., VZ,IN = VZ,IS = 68 V typ., RIS = 1 kΩ
Vout - VIS > 5V. If you want to measure load currents nominal. Note that when overvoltage exceeds 73 V typ.
Vbb − 5V a voltage above 5V can occur between IS and GND, if
up to IL(M), RIS should be less than . RV, VZ,VIS are not used.
I L ( M ) / K ilis
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.

Infineon Technologies AG Page 7 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Reversave (Reverse battery protection) Version b:

-Vbb
V Vbb
R bb
bb

IN PROFET OUT
IN

OUT
IS
Power
R IN Logic Transistor
VZb
IS

RL

Note that there is no reverse battery protection when

D R IS RV
using a diode without additional Z-diode VZL, VZb.
Signal Power

RV≥1kΩ, R IS = 1 kΩ nominal. Add RIN for reverse Version c:

battery protection in applications with Vbb above 16V; Sometimes a necessary voltage clamp is given by non
1 1 1 0.05 A, inductive loads RL connected to the same switch and
recommended value: + + =
RIN RIS RV | V | −12V eliminates the need of clamping circuit:
bb
To minimise power dissipation at reverse battery
operation, the summarised current into the IN and IS
pin should be about 50mA. The current can be V Vbb
bb RL
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by IN PROFET OUT
proper adjusting the current through RIS and RV.
Since the current through Rbb generates additional
IS
heat in the device, this has to be taken into account in
the overall thermal considerations.

Vbb disconnect with energised inductive

load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 73 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:

V
bb V
bb

IN PROFET OUT

IS

VZL

Infineon Technologies AG Page 8 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Inductive load switch-off energy Maximum allowable load inductance for

dissipation a single switch off
E bb L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω

E AS
L[mH]
ELoad 100
V
bb
i L(t)
V bb
IN PROFET OUT

EL
IS L
10

I
IN
ZL { RL ER
RIS

Energy stored in load inductance: 1

2
EL = 1/2·L·I L
While demagnetising load inductance, the energy
dissipated in PROFET is
0.1
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,

with an approximate solution for RL > 0 Ω:

IL· L IL·RL
EAS= (V + |VOUT(CL)|)
2·RL bb
ln (1+ |V ) 0.01
OUT(CL)|
0 25 50 75 100
The device is not suitable for permanent PWM with IL [A]
inductive loads if active clamping occurs every cycle.

Infineon Technologies AG Page 9 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Timing diagrams
Figure 1a: Switching a resistive load,
Figure 2a: Switching motors and lamps:
change of load current in on-condition:

IIN IIN

VOUT dV/dtoff
90%
t on
VOUT
dV/dton
t off
10%

IL tslc(IS) t slc(IS) IIL

Load 1 Load 2

IIS IIS
tson(IS) t t
t soff(IS)
Sense current above IIS,fault can occur at very high
The sense signal is not valid during a settling time
inrush currents.
after turn-on/off and after change of load current.

Figure 1b: typical behaviour of sense output: Figure 2b: Switching an inductive load:

IIN
IS

IIS,fault >= 2.5mA

VOUT

IL(lim) = 20A IL

IL

IIS
t

Infineon Technologies AG Page 10 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Figure 3a: Short circuit: Figure 5a: Undervoltage restart of charge pump,
overvoltage clamp

IN VOUT
12

10
VIN = 0
I
L
8
I V
L(SCp) ON(CL)
6 dynamic, short
I
L(SCr) Undervoltage
not below
VbIN(u)
4

IIS IISfault 2 IIN = 0

VON(CL)
t
0
0 VbIN(u)
2 4 V6bIN(ucp)8 10 V12
bb

Figure 4a: Overtemperature

Reset if Tj<Tjt

IIN

IIS IIS,fault

VOUT Auto Restart

Tj

Infineon Technologies AG Page 11 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Figure 6a: Current sense versus load current: Figure 7a: Output voltage drop versus load current:

[mA] I IS [V] VON

0.1 R
ON

2.0
V
ON(NL)

0.05
1.0

IL
IL
0
0.0
0 5 10 15 20 [A]
0 1 2 3 4 5 6 7 [A] 8

Figure 6b: Current sense ratio12 :

)

kILIS

8200

[A] IL
0
0 2.5 5 10 20

12 )
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised by
means of calibration the value of kILIS for every
single device.

Infineon Technologies AG Page 12 of 13 2003-Oct-01

 Data Sheet BTS 443 P

Package and Ordering Code

All dimensions in mm
D-Pak-5 Pin: TO-252-5-1
Sales Code BTS443P
Ordering code Q67060-S7404-A 2

6.5 +0.15 2.3 +0.05

-0.10
-0.10

5.4 ±0.1 B 0.9 +0.08

-0.04
A
1 ±0.1

1 ±0.1
0.8 ±0.15
(4.17)
6.22 -0.2

0...0.15
9.9 ±0.5

0.51 min

0.15 max
per side 5x0.6 ±0.1 0.5 +0.08
-0.04

1.14
0.1
4.56
0.25 M A B GPT09161

All metal surfaces tin plated, except area of cut.

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Infineon Technologies AG Page 13 of 13 2003-Oct-01