Power Transistors

2SC3611
Silicon NPN epitaxial planar type
Unit: mm
For video amplifier 8.0+0.5
–0.1 3.2±0.2

φ 3.16±0.1

■ Features

11.0±0.5
3.8±0.3
• High transition frequency fT

3.05±0.1
• Small collector output capacitance Cob
• Wide current range

1.9±0.1
• TO-126B package which requires no insulation plate for installa-

16.0±1.0
tion to the heat sink

■ Absolute Maximum Ratings TC = 25°C

0.75±0.1
0.5±0.1
Parameter Symbol Rating Unit 0.5±0.1 1.76±0.1
4.6±0.2
Collector to base voltage VCBO 110 V 2.3±0.2
1 : Base
Collector to emitter voltage VCER 100 V 2 : Collector
1 2 3
3 : Emitter
VCEO 50 V
TO-126B-A1 Package
Emitter to base voltage VEBO 3.5 V
Peak collector current ICP 300 mA
Collector current IC 150 mA
Collector power TC = 25°C PC 1.2 W
dissipation Ta = 25°C 4.0 *
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note) *: With a 100 × 100 × 2 mm A1 heat sink

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICEO VCE = 35 V, IB = 0 10 µA
Collector to base voltage VCBO IC = 100 µA, IE = 0 110 V
Collector to emitter voltage VCER IC = 500 µA, RBE = 470 Ω 100 V
VCEO IC = 1 mA, IB = 0 50 V
Emitter to base voltage VEBO IE = 100 µA, IC = 0 3.5 V
Forward current transfer ratio hFE VCE = 5 V, IC = 100 mA 20
Collector to emitter saturation voltage VCE(sat) IC = 150 mA, IB = 15 mA 0.5 V
Transition frequency fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz
fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 MHz
Collector output capacitance Cob VCB = 30 V, IE = 0, f = 1 MHz 3 pF

201
2SC3611 Power Transistors

PC  T a IC  VCE IC  VBE
5 240 120
(1)With a 100×100×2mm TC=25˚C VCE=5V
Al heat sink
Collector power dissipation PC (W)

(2)Without heat sink TC=100˚C

(1) 200 100
4 IB=5.0mA

Collector current IC (mA)

Collector current IC (mA)

25˚C
4.5mA –25˚C
160 4.0mA 80
3 3.5mA

3.0mA
120 60
2.5mA
2
2.0mA
80 40
1.5mA
(2)
1 1.0mA
40 20
0.5mA

0 0 0
0 40 80 120 160 200 240 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I E
10000 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=5 VCE=5V VCB=10V

10 f=200MHz
TC=25˚C
Forward current transfer ratio hFE

3000

Transition frequency fT (MHz)

500

3 1000

400
1 300
25˚C
100 300
TC=100˚C
0.3
30 –25˚C
TC=100˚C 200
0.1
–25˚C 10

25˚C 100
0.03
3

0.01 1 0
1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob  VCB Area of safe operation (ASO)

6 1000
IE=0 Single pulse
Collector output capacitance Cob (pF)

f=1MHz TC=25˚C
ICP
TC=25˚C 300
5
t=10ms
Collector current IC (A)

100 IC
t=100ms t=1s
4
30

3 10

3
2

1
0.3

0 0.1
1 3 10 30 100 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V)

202
Power Transistors 2SC3611

Rth(t)  t
104
free air
Thermal resistance Rth(t) (˚C/W)

103

102

10

10–1
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)

203
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2001 MAR