PD - 91309A

IRF3710
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 23mΩ
l Fast Switching G
l Fully Avalanche Rated ID = 57A
S

Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide TO-220AB
acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
IDM Pulsed Drain Current  230
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.8 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 23 mΩ VGS = 10V, ID =28A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 28A„
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 130 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 50V
tr Rise Time ––– 58 ––– ID = 28A
ns
td(off) Turn-Off Delay Time ––– 45 ––– RG = 2.5Ω
tf Fall Time ––– 47 ––– VGS = 10V, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 3130 ––– VGS = 0V

Coss Output Capacitance ––– 410 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 72 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy‚ ––– 1060…280† mJ IAS = 28A, L = 0.70mH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 57
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 230

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V „
trr Reverse Recovery Time ––– 140 220 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 670 1010 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See fig. 11) TJ ≤ 175°C
‚ Starting TJ = 25°C, L = 0.70mH „ Pulse width ≤ 400µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 28A, VGS=10V (See Figure 12) … This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .

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1000 1000
VGS VGS
TOP 16V TOP 16V
10V 10V
7.0V 7.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

6.0V 6.0V
100 5.0V 100 5.0V
4.5V 4.5V
4.0V 4.0V
BOTTOM 3.5V BOTTOM 3.5V

10 10

3.5V
3.5V

1 1

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 175°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00

3.0
I D = 57A
ID, Drain-to-Source Current (Α )

2.5

100.00
T J = 175°C
R DS(on) , Drain-to-Source On Resistance

2.0
(Normalized)

10.00 1.5

T J = 25°C 1.0

1.00
0.5
VDS = 15V
20µs PULSE WIDTH 
V GS = 10V
0.10 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
3.0 4.0 5.0 6.0 7.0 8.0 9.0
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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100000 12


VGS = 0V, f = 1 MHZ ID = 28A
V DS = 80V
Ciss = Cgs + Cgd, Cds SHORTED V DS = 50V
Crss = Cgd V DS = 20V
10
10000 Coss = Cds + Cgd
C, Capacitance(pF)

VGS, Gate-to-Source Voltage (V)

Ciss 7

1000
Coss
5

100 Crss
2

10 0
1 10 100 0 20 40 60 80 100

QG , Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)

100.00 100

T J = 175°C
100µsec
10.00 10
1msec

T J = 25°C
1.00 1 10msec
Tc = 25°C
VGS = 0V Tj = 175°C
Single Pulse
0.10 0.1
0.0 0.5 1.0 1.5 2.0 1 10 100 1000
VSD , Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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60
RD
VDS

50 VGS
D.U.T.
RG
+
40 -VDD
I D , Drain Current (A)

VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

20

Fig 10a. Switching Time Test Circuit

10 VDS
90%
0
25 50 75 100 125 150 175

TC , Case Temperature ( °C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

D = 0.50
(Z thJC)

0.20
Thermal Response


0.1 0.10

0.05 P DM

0.02  SINGLE PULSE

(THERMAL RESPONSE)
t1

t2
0.01

0.01
 Notes:
1. Duty factor D =
2. Peak T J
t1/ t 2
= P DM x Z thJC +TC

0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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550
1 5V ID
TOP 11A
20A
440 BOTTOM 28A
L D R IV E R
VD S

E AS , Single Pulse Avalanche Energy (mJ)

RG D .U .T + 330
- VD D
IA S A
2V0GS
V
tp 0 .0 1 Ω
220

Fig 12a. Unclamped Inductive Test Circuit

110
V (B R )D SS
tp
0
25 50 75 100 125 150 175

Starting T , Junction
J Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET® power MOSFETs

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Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10 .54 (.4 15) 3 .7 8 (.149 ) -B -
2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB

EXAMPLE: THIS IS AN IRF1010 PART NUMBER

LOT CODE 1789 INTERNATIONAL
ASSEMBLED ON WW 19, 1997 RECTIFIER
LOGO
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT CODE WEEK 19
LINE C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
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