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Ordering number : EN7200 2SD1710C

SANYO Semiconductors
DATA SHEET

2SD1710C NPN Triple Diffused Planar Silicon Transistor

500V / 7A Switching Regulator Applications


Features
• High breakdown voltage, high reliability.
• Fast switching speed.
• Wide ASO.
• Adoption of MBIT process.
• Micaless package facilitating mounting.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 900 V
Collector-to-Emitter Voltage VCEO 500 V
Emitter-to-Base Voltage VEBO 7 V
Collector Current IC 7 A
Collector Current (Pulse) ICP PW≤300μs, duty cycle≤10% 14 A
Base Current IB 3 A
3 W
Collector Dissipation PC
Tc=25°C 45 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=500V, IE=0A 10 μA
Emitter Cutoff Current IEBO VEB=5V, IC=0A 10 μA
Continued on next page.

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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

20608KC TI IM TA-3441 No. 7200-1/4


2SD1710C
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
hFE1 VCE=5V, IC=0.6A 20 50
DC Current Gain
hFE2 VCE=5V, IC=3A 8
Gain-Bandwidth Product fT VCE=10V, IC=0.6A 18 MHz
Output Capacitance Cob VCB=10V, f=1MHz 80 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.6A 1 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=3A, IB=0.6A 1.5 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0A 900 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ 500 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0A 7 V
Collector-to-Emitter Sustain Voltage VCEX(sus) IC=2.5A, IB1=--IB2=1A, L=1mH, Clamped 500 V
Turn-ON Time ton VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω 0.5 μs
Storage Time tstg VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω 3.0 μs
Fall Time tf VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω 0.3 μs

Package Dimensions Switching Time Test Circuit


unit : mm (typ)
7502-002
IB1
PW=20μs
3.4 5.6 OUTPUT
16.0 D.C.≤1% IB2
3.1
5.0
8.0

INPUT RB
VR RL=50Ω
22.0
21.0

2.0

50Ω
4.0

+ +
2.8 100μF 470μF
2.0 2.0
VBE= --5V VCC=200V
20.4

1.0 0.6

1 2 3
1 : Base
2 : Collector
3.5

3 : Emitter

5.45 5.45 SANYO : TO-3PML

IC -- VCE IC -- VBE
8 8
VCE=5V
1.2A
1.0A
Collector Current, IC -- A
Collector Current, IC -- A

6 6
800mA
600mA

4 400mA 4
C
20°

25°C

200mA
C
1

--40°
Ta=

2 100mA 2

50mA
20mA IB=0mA
0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT03804 Base-to-Emitter Voltage, VBE -- V IT03805

No. 7200-2/4
2SD1710C
hFE -- IC VCE(sat) -- IC
100 3
VCE=5V IC / IB=5

40°C
7 2
Ta=120°C

Ta= --
Saturation Voltage, VCE(sat) -- V

C
5

120°
1.0
DC Current Gain, hFE

3 7
25°C 5

C
25°
Collector-to-Emitter
2
3

--40°°C 2
10
0.1
7
7 Ta= --40°C
5
5 25°C

3 3
120°C
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT03806 Collector Current, IC -- A IT03807
VBE(sat) -- IC SW Time -- IC
2 7
IC / IB=5 5
tstg
Saturation Voltage, VBE(sat) -- V

Switching Time, SW Time -- s


2
1.0
Ta= --40°C
1.0
7
25°C 7
5
Base-to-Emitter

120°C
5
3

3 ton
0.1 tf
7
2 5
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7
Collector Current, IC -- A IT03808 Collector Current, IC -- A IT03809
Forward Bias A S O Reverse Bias A S O
2 2

ICP=14A <50μs
10

10 10

7 IC=7A 7
s

5 5
Collector Current, IC -- A

Collector Current, IC -- A

DC P
C
3 Op =45W 3
era
1m
10

2 2
tio
ms

n Test Circuit
1.0 1.0
IB1
7 7 IC
5 5
IB2
TUT

3 3
L
2 2
VR
0.1 0.1
IB2= --1.0A
7 7
5 Tc=25°C L=200μH
5
Single pulse --5V VCC=20V Tc=25°C
3 3
5 7 10 2 3 5 7 100 2 3 5 7 1000 10 2 3 5 7 100 2 3 5 7 1000
Collector-to-Emitter Voltage, VCE -- V IT03810 Collector-to-Emitter Voltage, VCE -- V IT03811
Rth(t) -- t PC -- Tc
5 50
Transient Thermal Resistance, Rth(t) -- °C / W

Tc=25°C
3 45
Collector Dissipation, PC -- W

2 40

1.0
30
7
5

3 20

10
0.1

7
5 0
0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2 3 51000 0 20 40 60 80 100 120 140 150 160
Time, t -- ms IT03812 Case Temperature, Tc -- °C IT03813

No. 7200-3/4
2SD1710C

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.

PS No. 7200-4/4

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