AP90T03GH/J

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Lower On- resistance D BVDSS 30V

▼ Simple Drive Requirement RDS(ON) 4mΩ
▼ Fast Switching Characteristic ID 75A
G
S
Description

The TO-252 package is widely preferred for commercial-industrial G

DS
surface mount applications and suited for low voltage applications TO-252(H)
such as DC/DC converters. The through-hole version (AP90T03GJ)
is available for low-profile applications.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 75 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 63 A
1
IDM Pulsed Drain Current 350 A
PD@TC=25℃ Total Power Dissipation 96 W
Linear Derating Factor 0.7 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data & specifications subject to change without notice 1

200802182
AP90T03GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=45A - - 4 mΩ
VGS=4.5V, ID=30A - - 6 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.8 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 55 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
2
Qg Total Gate Charge ID=40A - 60 96 nC
Qgs Gate-Source Charge VDS=24V - 8.5 nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 38 nC
2
td(on) Turn-on Delay Time VDS=15V - 14 - ns
tr Rise Time ID=30A - 83 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 66 - ns
tf Fall Time RD=0.5Ω - 120 - ns
Ciss Input Capacitance VGS=0V - 4090 6540 pF
Coss Output Capacitance VDS=25V - 1010 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 890 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=45A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=30A, VGS=0V, - 51 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 63 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

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 AP90T03GH/J

200 160

T C =25 o C
140
T C = 1 50 o C 10V
10V 7.0V
160
7.0V 5.0V

ID , Drain Current (A)

120
5.0V 4.5V
ID , Drain Current (A)

4.5V 100
V G =3.0V
120
V G =3.0V
80

80
60

40

40

20

0 0
0 1 2 3 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

5.0 2.0

I D = 45 A
I D =20A
1.8 V G =10V
T C =25 o C
1.5
Normalized RDS(ON)

4.5
RDS(ON) (mΩ)

1.3

1.0

0.8
4.0

0.5

0.3

3.5 0.0
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
20 2

15 1.5

o o
T j =150 C T j =25 C
VGS(th) (V)
Is (A)

10 1

5 0.5

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP90T03GH/J

10000
f=1.0MHz
14

I D = 40 A
12
VGS , Gate to Source Voltage (V)

V DS =15V Ciss
10 V DS =20V
V DS =24V
8

C (pF)
1000 Coss
Crss
6

0 100
0 20 40 60 80 100 120 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

100
100us 0.2
ID (A)

0.1

0.1
1ms 0.05

PDM

10 10ms 0.02 t
T
0.01
100ms
T c =25 o C
Single Pulse Duty factor = t/T

DC Peak Tj = PDM x Rthjc + T C

Single Pulse
1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252

D Millimeters
SYMBOLS
MIN NOM MAX
D1
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
E2
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65

B1 F1 F

e e 1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

A2 R : 0.127~0.381

A3 (0.1mm C

Part Marking Information & Packing : TO-252

Part Number
Package Code
meet Rohs requirement
90T03GH
LOGO
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence

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 ADVANCED POWER ELECTRONICS CORP.

D Millimeters
A
SYMBOLS MIN NOM MAX
c1
D1 Original Original Original
A 2.10 2.30 2.50
E2 A1 0.60 1.20 1.80
B1 0.40 0.60 0.80
B2 0.60 0.95 1.25
E1 E
c 0.40 0.50 0.65
c1 0.40 0.55 0.70
D 6.00 6.50 7.00
A1 D1 4.80 5.40 5.90
E1 5.00 5.50 6.00
B2
E2 1.20 1.70 2.20
F e ---- 2.30 ----
B1
F 7.00 --- 16.70

1.All Dimensions Are in Millimeters.

c 2.Dimension Does Not Include Mold Protrusions.

e e

Part Marking Information & Packing : TO-251

Part Number
meet Rohs requirement
90T03GJ Package Code
LOGO
YWWSSS Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence