ZXM62P02E6

20V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.20V; ID=-2.3A

DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SOT23-6
FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT23-6 package

APPLICATIONS
• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION
DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches) PER REEL
Top View
ZXM62P02E6TA 7 8mm embossed 3000 units

ZXM62P02E6TC 13 8mm embossed 10000 units

DEVICE MARKING
• 2P02

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ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V DSS -20 V
Gate- Source Voltage V GS ± 12 V
Continuous Drain Current (V GS=-4.5V; T A=25°C)(b) ID -2.3 A
(V GS=-4.5V; T A=70°C)(b) -1.7
Pulsed Drain Current (c) I DM -13 A
Continuous Source Current (Body Diode)(b) IS -1.9 A
Pulsed Source Current (Body Diode)(c) I SM -13 A
Power Dissipation at T A=25°C (a) PD 1.1 W
Linear Derating Factor 8.8 mW/°C
Power Dissipation at T A=25°C (b) PD 1.7 W
Linear Derating Factor 13.6 mW/°C
Operating and Storage Temperature Range T j:T stg -55 to +150 °C

THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R θJA 113 °C/W

Junction to Ambient (b) R θJA 73 °C/W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.

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CHARACTERISTICS

Max Power Dissipation (Watts)

100 2
Refer Note (a)
-ID - Drain Current (A)

1.5
10
Refer Note (b)
Refer Note (a)
1

1 DC
1s 0.5
100ms
10ms
1ms
100µs
0.1 0
0.1 1 10 100 0 20 40 60 80 100 120 140 160
-VDS - Drain-Source Voltage (V) T - Temperature (° )
Safe Operating Area Derating Curve

80 120
Thermal Resistance (°C/W)

Thermal Resistance (°C/W)

Refer Note (b) Refer Note (a)

100
60
80

D=0.5
40 D=0.5 60

40
20 D=0.2 D=0.2
20 D=0.1
D=0.1
D=0.05 D=0.05 Single Pulse
Single Pulse
0 0
0.0001 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Transient Thermal Impedance

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V (BR)DSS -20 V I D=-250µA, V GS=0V

Zero Gate Voltage Drain Current I DSS -1 µA V DS=-20V, V GS=0V

Gate-Body Leakage I GSS ±100 nA V GS=± 12V, V DS=0V

Gate-Source Threshold Voltage V GS(th) -0.7 V I D =-250µA, V DS= V GS

Static Drain-Source On-State Resistance R DS(on) 0.2 Ω V GS=-4.5V, I D=-1.6A

(1) 0.375 Ω V GS=-2.7V, I D=-0.8A

Forward Transconductance (3) g fs 1.5 S V DS=-10V,I D=-0.8A

DYNAMIC (3)

Input Capacitance C iss 320 pF

V DS=-15 V, V GS=0V,
Output Capacitance C oss 150 pF f=1MHz

Reverse Transfer Capacitance C rss 75 pF

SWITCHING(2) (3)

Turn-On Delay Time t d(on) 4.1 ns

Rise Time tr 15.4 ns V DD =-10V, I D=-1.6A

R G=6.0Ω, R D=6.1Ω
Turn-Off Delay Time t d(off) 12.0 ns (Refer to test circuit)
Fall Time tf 19.2 ns

Total Gate Charge Qg 5.8 nC

V DS=-16V,V GS=-4.5V,
Gate-Source Charge Q gs 1.25 nC I D =-1.6A
(Refer to test circuit)
Gate Drain Charge Q gd 2.8 nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-1.6A,

V GS=0V

Reverse Recovery Time (3) t rr 22.5 ns T j=25°C, I F=-1.6A,

di/dt= 100A/µs
Reverse Recovery Charge(3) Q rr 10.4 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

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TYPICAL CHARACTERISTICS

100 100
+25°C +150°C
-ID - Drain Current (A)

-ID - Drain Current (A)

5V 4.5V -VGS 5V 4.5V -VGS
4V
10 10 4V
3.5V
3.5V
3V 3V
2.5V 2.5V

2V
1 2V 1

0.1 0.1
0.1 1 10 100 0.1 1 10 100
-VDS - Drain-Source Voltage (V) -VDS - Drain-Source Voltage (V)
Output Characteristics Output Characteristics

100 1.6
Normalised RDS(on) and VGS(th)

VDS=-10V
RDS(on)
-ID - Drain Current (A)

1.4
VGS=-4.5V
ID=-1.6A
10 1.2

1.0
T=150°C VGS=VDS
T=25°C ID=-250µA
1 0.8
VGS(th)

0.6

0.1 0.4
1 1.5 2 2.5 3 3.5 4 4.5 5 -100 -50 0 50 100 150 200
-VGS - Gate-Source Voltage (V) Tj - Junction Temperature (°C)
Typical Transfer Characteristics Normalised RDS(on) and VGS(th)
v Temperature
RDS(on) - Drain-Source On-Resistance (Ω )

10 100
-ISD - Reverse Drain Current (A)

10

1
VGS=-3V
VGS=-5V T=150°C
T=25°C

0.1 0.1
0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-ID - Drain Current (A) -VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current Source-Drain Diode Forward Voltage

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TYPICAL CHARACTERISTICS

-VGS - Gate-Source Voltage (V)

700 5
Vgs=0V ID=-1.6A
f=1Mhz 4.5
600
C - Capacitance (pF)

4
VDS=-16V
500 3.5
Ciss
Coss 3
400 Crss
2.5
300 2
200 1.5
1
100
0.5
0 0
0.1 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS - Drain Source Voltage (V) Q - Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge

Basic Gate Charge Waveform Gate Charge Test Circuit

Switching Time Waveforms Switching Time Test Circuit

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PACKAGE DIMENSIONS PAD LAYOUT DETAILS

b e
L 2

E E1

a DATUM A
e1
D
C

A A2 A1

DIM Millimetres Inches

Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L 0° 10° 0° 10°

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420

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D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
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Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.

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