ESc201, Lecture 18:  

18:  Bipolar Junction 
Bipolar Junction Transistor 
Transistor (ONLY FOR ADVANCED SUDY)
(ONLY FOR ADVANCED SUDY)

DISREGARD 
DISREGARD
NOW
 ESc201, Lecture 17:  Bipolar Junction Transistor
17:  Bipolar Junction Transistor

Wh V BE= 0.7
Why 0 7 V?
Note: IE (and thus IC ) varies exponentially with respect to VBE.
A small change in VBE can cause a very large change in IC.
As a rule of thumb,
thumb VBE under the forward active mode is assumed to get pinned at 00.7
7VV,
slightly greater than 0.6V used for cut-
cut-in voltage Von.
This is only a heuristic used for quick estimate
The answer may not be accurate
accurate, however
however, good enough! IE  p
pA-nA
S
VBE VBE VBE VT= (k
(kBT)/q
q q n=1 = 25.9mV at 300 oK.
nk B T nk B T
I E =I E [e 1]  I E ×e
-1] = I E ×e VT
S S S ≈ 26mV at 300oK.
Current Gain
The sum of the collection component and the recombination component must always
equal the injection component (charge conservation)
IE=IB+IC
Common Emitter Current Gain ( ( ) = IC / IB
Common Base Current Gain ( ( ) = IC / IE
Thus, 

and
and 
For a good transistor IB should be as small as possible or  →1 and hence  is quite
large (100 – 500)
Closer is the value of α to 1, better is the BJT !
 ESc201, Lecture 18:  Bipolar Junction Transistor
18:  Bipolar Junction Transistor
Modes of Operation : BE and BC junction can either be forward biased
or reverse biased,
bi d which
hi h gives
i 4 possible
ibl modes
d off operation.
i
1. Forward Active Mode:
Mode: BE junction forward biased AND BC junction reverse biased.
2. Reverse Active Mode:
Mode: BE junction reverse biased AND BC junction forward biased.
3
3. S t
Saturation
ti MMode
Mode:
d : Both
B th jjunctions
ti forward
f d bi
biased.
d
4. Cutoff Mode
Mode:: Both junctions Reverse biased.
Common Emitter (CE) Configuration Once VCE drops below 0.7 V, the BJT enters the
saturation
i mode off operation.
i With
i further
f
IC
RC reduction in V CE , the BJT moves deeper into
R1 saturation. This is the digital mode of operation
IB C +
VCC off BJTs.
BJT However,
H BJTs
BJT used d in
i analog
l circuits
i it
C→∞
- should never ever enter this mode of operation.
B Vo Always check for analog circuits if VCE is >0.7V.
R2
E Real Ideal
VCE ≈ 0.2V IB=100mA
sat 12
This course would only deal with Ideal IC IB=80mA
characteristics 8
(mA) IB=60mA
4 IB=40mA
IB=20mA
20 A
0
All meet the x-
x-axis at a point, called the EARLY voltage (VA) 0 5 10 15 VCE (V)
 ESc201, Lecture 18:  Bipolar Junction Transistor
18:  Bipolar Junction Transistor

Common Collector (CC) Configuration

Common Base (CB) Configuration
C→∞
+VCC

+1.5 V C→∞ RE
Vin Q4
RCn Q3 C→∞
Q2 C→∞ RC
C→∞ Vo Reff RL Vout
Vs Q1 RCp -VEE
RB
RE C→∞
-1.5 V
CE

Non-inverting voltage gain and output

Non- High Input Impedance
resistance very similar to CE configuration But Low output
p Impedance
p
But input impedance much lower than CE with Gain ≈ < 1.
 ESc201, Lecture 18:  Bipolar Junction Transistor
18:  Bipolar Junction Transistor
Henceforth : Only Common Emitter (CE) Configuration in this course
If IB varies from 0→
0→1515→
→30
30A
linearly, the collector current
swing
i isi distorted
di t t d as IC which
hi h
should have reached 6mA does
not do so because of saturation.
Saturation Bad
Region
Good Q point
Choosing Good
Q point and a
Good Loadline Bad
helps in
obtaining the
DoS β has a value 1 β maximum
Note The value of DoS is a te dynamic range.
At onset of saturation, DoS = 1, and as the BJT is driven deeper and deeper into 
saturation, the value of DoS keeps on increasing
ll tale sign of judging how deeply the transistor is driven into saturation Commonly used 
Base – Emitter junction characteristics Maximum equal swing
values OS Onset of Saturati BE(FA) CE(FA) CE(OS) CE(HS) BE(HS) V =0.7 VV >0.7 V
V =0.7 V V =0.1 V V =0.8 V about Q
Q--point
: on, HS : Hard SaturationTaken form https://slideplayer.com/
 ESc201, Lecture 18:  Bipolar Junction Transistor
18:  Bipolar Junction Transistor
Disregard
g the slope
p of the
flat regions i.e. VA= ∞

For VCE = 0.7V, the BJT enters the

saturation region.
g
VCE = VCC (Supply voltage) when IC= 0 or
max
Q-point shoud be at : VCEQ=[VCC – 0.7]/2.
In this case it should be VCEQ=(12
=(12--0.7)/2
=11.3/2=5.65V
Taken from : https://www.electronics‐
tutorials.ws/amplifier/amp_2.html
 ESc201, Lecture 18:  Bipolar Junction Transistor
18:  Bipolar Junction Transistor
Then, the transistor is replaced by its – small signal ac model
Subsequently, usual network analysis is done to obtain:
1) Voltage Gain (Av ) Problem of Biasing: Terminal voltages and currents.
2) Current Gain (Ai )
10-16 A, F =50,
Given data: VBB = 0.75V, VCC = 5.0V, IS=10 50,
3) P
Power Gain
G i (A(Ap= | Ai.AAv|)
R =1, VT =25.0 mV.
4) Input Resistance ((R
Rin )
What is the maximum value of a resistance added to the
5) Output Resistance (Rout ) collector (R )?
C
Analysis: VBE =0.75 V, VBC=VBB-VCC
=0.75V--5.0V = - 4.3V or VCE=5V > VBE
=0.75V
RC =0.75V.
0.75V. The BJT is forward active mode.
VBE
I E  IE ×e VT
S

 1016 ×e0.75/0.025 =1.07mA

I E = I B  I C = 1 .0 5 + 0 .0 2 1 4 = 1 .0 7 1 4 m A
IC IC
α = =
F I 1.07mA β+1 51 = β = 50 =0.9804, IC =1.05mA IB = C =
I
1 .0 5 m A
= 2 1 .0 μ A
E βF
50
RBB
VR =1.05
C
A R C = 5-0.75V
1 05mA 5 0 75V or R C
max
=4.05kΩ
4 05kΩ
VBB
+
IBB RBB

or R C =2.025kΩ for best biasing
req
 ESc201, Lecture 18:  Bipolar Junction Transistor
18:  Bipolar Junction Transistor

Current in base- common--emitter current gain F and appears

base-emitter diode is amplified by common
at collector-
collector-base and collector currents are exponentially
p y related to base-
base-emitter voltage.
g
Base--emitter diode is replaced by constant voltage drop model(
Base model(VVBE = 0.7 V) since it is
forward--biased in forward
forward forward--active region.
DC base and emitter voltages differ by 0.70 7 V diode voltage drop in forward-
forward-active region.
region

r
RBB
RO→∞
when slope of IC-VCE→0