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PN2907 / MMBT2907 — PNP General-Purpose Transistor

January 2014

PN2907 / MMBT2907
PNP General-Purpose Transistor

Description
This device is designed for use with general-purpose
amplifiers and switches requiring collector currents to
500 mA. Sourced from process 63.

PN2907 MMBT2907

E
TO-92 SOT-23 B
Mark:2B
EBC

Ordering Information
Part Number Top Mark Package Packing Method
PN2907BU PN2907 TO-92 3L Bulk
MMBT2907_D87Z 2B SOT-23 3L Tape and Reel

© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com


PN2907 / MMBT2907 Rev. 1.1.0 1
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit


VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -60 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current - Continuous -800 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.

Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.

Max.
Symbol Parameter Unit
PN2907(3) MMBT2907(4)
Total Device Dissipation 625 350 mW
PD
Derate Above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch.

© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com


PN2907 / MMBT2907 Rev. 1.1.0 2
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Max. Unit


Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0 -40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V
ICEX Collector Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA
IBL Base Cut-Off Current VCE = -30 V, VEB = -0.5 V -50 nA
VCB = -50 V, IE = 0 -20 nA
ICBO Collector Cut-Off Current
VCB = -50 V, IE = 0, TA = 150°C -20 μA
On Characteristics(5)
VCE = -10 V, IC = -0.1 mA 35
VCE = -10 V, IC = -1.0 mA 50
hFE DC Current Gain VCE = -10 V, IC = -10 mA 70
VCE = -10 V, IC = -150 mA 100 300
VCE = -10 V, IC = -500 mA 30
IC = -150 mA, IB = -15 mA -0.4
VCE(sat) Collector-Emitter Saturation Voltage V
IC = -500 mA, IB = -50 mA -1.6
IC = -150 mA, IB = -15 mA -1.3
VBE(sat) Base-Emitter Saturation Voltage V
IC = -500 mA, IB = -50 mA -2.6
Small Signal Characteristics
Cob Output Capacitance VCB = -10 V, f = 1.0 MHz 8 pF
Cib Input Capacitance VEB = -2.0 V, f = 1.0 MHz 30 pF
IC = -50 mA, VCE = -20 V,
hfe Small-Signal Current Gain 2
f = 100 MHz
Switching Characteristics
ton Turn-On Time 45 ns
VCC = -30 V, IC = -150 mA,
td Delay Time 10 ns
IB1 = -15 mA
tr Rise Time 40 ns
toff Turn-Off Time 100 ns
VCC = -6.0 V, IC = -150 mA,
ts Storage Time 80 ns
IB1 = IB2 = -15mA
tf Fall Time 30 ns

Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com


PN2907 / MMBT2907 Rev. 1.1.0 3
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Physical Dimensions

TO-92 (Bulk)

Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.

© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com


PN2907 / MMBT2907 Rev. 1.1.0 4
PN2907 / MMBT2907 — PNP General-Purpose Transistor
Physical Dimensions (Continued)

SOT-23
2.92±0.20 0.95

3
1.40

1.30+0.20
-0.15 2.20

1 2
(0.29) 0.60
0.95 0.37
0.20 A B 1.00
1.90 1.90
LAND PATTERN
RECOMMENDATION

1.20 MAX SEE DETAIL A

(0.93) 0.10
0.00
0.10 C
C 2.40±0.30

NOTES: UNLESS OTHERWISE SPECIFIED


GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.
0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,
0.25 MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10
(0.55) PLANE

SCALE: 2X

Figure 2. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com


PN2907 / MMBT2907 Rev. 1.1.0 5
TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower¥ F-PFS¥ Sync-Lock™


AX-CAP®* FRFET® ®
SM ®*
BitSiC¥ Global Power Resource PowerTrench®
Build it Now¥ GreenBridge¥ PowerXS™ TinyBoost®
CorePLUS¥ Green FPS¥ Programmable Active Droop¥ TinyBuck®
CorePOWER¥ Green FPS¥ e-Series¥ QFET® TinyCalc¥
CROSSVOLT¥ Gmax¥ QS¥ TinyLogic®
CTL¥ GTO¥ Quiet Series¥ TINYOPTO¥
Current Transfer Logic¥ IntelliMAX¥ RapidConfigure¥ TinyPower¥
DEUXPEED® ISOPLANAR¥ ¥ TinyPWM¥
Dual Cool™ Making Small Speakers Sound Louder TinyWire¥
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TranSiC¥
EfficientMax¥ MegaBuck¥ SignalWise¥ TriFault Detect¥
ESBC¥ MICROCOUPLER¥ SmartMax¥ TRUECURRENT®*
® MicroFET¥ SMART START¥ PSerDes¥
MicroPak¥ Solutions for Your Success¥
Fairchild® MicroPak2¥ SPM®
Fairchild Semiconductor® STEALTH¥
MillerDrive¥ UHC®
FACT Quiet Series¥
MotionMax¥ SuperFET®
Ultra FRFET¥
FACT® SuperSOT¥-3
mWSaver® UniFET¥
FAST® SuperSOT¥-6
OptoHiT¥ VCX¥
FastvCore¥ SuperSOT¥-8
OPTOLOGIC® VisualMax¥
FETBench¥ OPTOPLANAR® SupreMOS®
FPS¥ VoltagePlus¥
SyncFET¥
XS™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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under Sales Support.
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
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Obsolete Not In Production
The datasheet is for reference information only.
Rev. I66

© Fairchild Semiconductor Corporation www.fairchildsemi.com

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