TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4

TLP521XGB, TLP521-2XGB, TLP521-4XGB

TLP521X, TLP521-2X, TLP521-4X

HIGH DENSITY MOUNTING

PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS

APPROVALS Dimensions in mm
TLP521 2.54
l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS 7.0 1 4

l VDE 0884 in 3 available lead form : - 6.0 2 3
- STD
1.2
- G form
- SMD approved to CECC 00802
5.08 7.62
l BSI approved - Certificate No. 8001 4.08 4.0
3.0
13°
DESCRIPTION 0.5 Max
The TLP521, TLP521-2, TLP521-4 series of 3.0 0.26
optically coupled isolators consist of infrared TLP521-2 3.35
0.5
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic 2.54
packages. 1 8
2 7
FEATURES 7.0 3 6
6.0
l Options :- 4 5
10mm lead spread - add G after part no. 1.2
Surface mount - add SM after part no.
10.16 7.62
Tape&reel - add SMT&R after part no. 9.16
l High Current Transfer Ratio ( 50% min) 4.0
3.0
l High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l High BVCEO ( 55Vmin ) 0.5 13°
Max
l All electrical parameters 100% tested 3.0
0.26
l Custom electrical selections available 3.35
0.5
1 16
APPLICATIONS
l Computer terminals TLP521-4 2 15
l Industrial systems controllers 3 14
l Measuring instruments 2.54 4 13
l Signal transmission between systems of
different potentials and impedances 5 12
7.0 6 11
6.0
7 10
OPTION SM OPTION G
SURFACE MOUNT 7.62 1.2 8 9
20.32 7.62
19.32 4.0
3.0
0.6 13°
0.1 1.25 0.26 0.5 Max
0.75
10.46 0.26
9.86 10.16 0.5 3.35

ISOCOM INC
ISOCOM COMPONENTS LTD
1024 S. Greenville Ave, Suite 240,
Unit 25B, Park View Road West,
Allen, TX 75002 USA
Park View Industrial Estate, Brenda Road
Tel: (214) 495-0755 Fax: (214) 495-0901
Hartlepool, Cleveland, TS25 1YD
e-mail info@isocom.com
Tel: (01429) 863609 Fax :(01429) 863581 http://www.isocom.com
7/4/03
DB92546m-AAS/A3
 ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 125°C

Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA

Reverse Voltage 6V
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BVCEO 55V

Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 200mW

(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.0 1.15 1.3 V IF = 10mA

Reverse Current (IR) 10 µA VR = 4V

Output Collector-emitter Breakdown (BVCEO) 55 V IC = 0.5mA

( Note 2 )
Emitter-collector Breakdown (BVECO) 6 V IE = 100µA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 20V

Coupled Current Transfer Ratio (CTR) (Note 2)

TLP521, TLP521-2, TLP521-4 50 600 % 5mA IF , 5V VCE
CTR selection available BL 200 600 %
GB 100 600 %
GB 30 % 1mA IF , 0.4V VCE

Collector-emitter Saturation VoltageVCE (SAT) 0.4 V 8mA IF , 2.4mA IC

-GB 0.4 V 1mA IF , 0.2mA IC

Input to Output Isolation Voltage VISO 5300 VRMS See note 1

7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1)
Response Time (Rise), tr 4 µs VCE = 2V ,
Response Time (Fall), tf 3 µs IC = 2mA, RL = 100Ω

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

7/4/03 DB92546m-AAS/A3
 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
Collector power dissipation PC (mW)

25

Collector current IC (mA)

150 50
20
40
30
15 20
100
10
10 5
50
5 IF = 2mA

0 0
-30 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage

60
50 TA = 25°C
50
50 30
Forward current IF (mA)

20
Collector current IC (mA)

40
40
15
30
30 10

20
20

10 10 IF = 5mA

0 0
-30 0 25 50 75 100 125 0 2 4 6 8 10
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Collector-emitter Saturation Current Transfer Ratio vs. Forward Current

Collector-emitter saturation voltage VCE(SAT) (V)

Voltage vs. Ambient Temperature

0.28 320

0.24 280
Current transfer ratio CTR (%)

IF = 5mA
0.20 IC = 1mA 240

200
0.16
160
0.12
120
0.08
80 VCE = 5V
0.04 TA = 25°C
40
0 0
-30 0 25 50 75 100 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)

7/4/03
DB92546m-AAS/A3