, One.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

BCY70
BCY71/BCY72

GENERAL PURPOSE APPLICATIONS

DESCRIPTION
The BCY70, BCY71 and BCY72 are silicon planar
epitaxial PNP transistors in Jedec TO-18 metaJ
case.

Ok.
TO-18

INTERNAL SCHEMATIC DIAGRAM

PNP

ABSOLUTE MAXIMUM RATINGS

Value
Symbol Parameter Unit
BCY70 BCY71 BCY72
VCBO Collector-base Voltage (IE = 0) -50 -45 -25 V
VCEO Collector-emitter Voltage (le = 0) -40 -45 -25 V
VEBO Emitter-base Voltage (Ic = 0} -5 V
ICM Collector Peak Current -200 mA
Ptol Total Power Dissipation at Tam6 s 25 °C 350 mW
Tsto, T, Storage and Junction Temperature - 65 to 200 :C

Pulsed : pulse duration = 300 us. duty cyde = 1 %.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 IHbHMALDATA

Rth J-C83B Thermal Resistance Junction-case Max 150 °C/W

Rth j-amb Thermal Resistance Junction-ambient Max 500 °C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Symbol Parameter Test Conditions Mln. Typ. Max. Unit
ICES Collector Cutoff Current For BCY70
(V B e=0) VCE =-20 V - 10 nA
VCE = - 50 V -500 nA
For BCY71
VCB = - 20 V -100 nA
VCB = - 45 V - 10 HA
For BCY72
VCB = - 20 V -100 nA
VCB = - 25 V - 10 HA
IEBO Emitter cutoff Current VEB = - 5 V -10 HA
Oo-O)
VCE (sat)* Collector-emitter Saturation lc =- 10 mA IB =- 1 mA -0.25 V
Voltage lc =- 50 mA IB = - 5 mA -0.5 V
VBE(sat)* Base-Emitter Saturation Voltage lc =- 10 mA IB =- 1 mA
For BCY70 and BCY71 Only - 0.6 - 0.9 V
lc =-50 mA IB =- 5 mA -1.2 V
hFE* DC Current Gain For BCY70
l c =-0,1 mA VCE =- 1 V 40
lc = - 1 mA VCE =-1 V 45
lc = - 1 0 m A VCE =-1 V 50
lc = - 50 mA VCE =- 1 V 15
For BCY71
lc =-0.01 mA VCE = - 1 V 60
l c =-0.1 mA Vce = - 1 V 80
l c « - 1 mA VCE = - 1 V 90
lc =- 10mA VCE = - 1 V 100 600
lc = - 5 0 m A VCE =- 1 V 15
For BCY72
l c = - 1 mA VCE — 1 V 40
lc =- 10mA VCE =- 1 V 50
hfa Small Signal Current Gain lc = - 1 mA VCE =-10 V 100 400
(for BCY71 only) f = 1 kHz
fr Transition Frequency lc =-0,1 mA VCE =-20 V
f = 10.7 MHz
For BCY71 15 MHz
-
lc--10mA VCE =- 2 0 V
f = 100 MHz
For BCY70 250 MHz
For BCY70 and BCY72 200 MHz
CEBO Emitter-base Capacitance lc=0 V EB = - 1 V
f - 1 MHz 8 PF
CCBO Collector-base Capacitance IE=0 VCB=-10V PF
f » 1 MHz 6
* Pulsed : pulse duration n 300 us, duty cycle = 1 %.
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Teat Conditions Win. Typ. Max. Unit
NF Noise Figure lc =-0.1 mA VCE = - 5 V
Rg = 2 k O
f = 10 to 10 000 Hz
For BCY70 and BCY72 6 dB
for BCY71 2 dB
hi. Input Impedance lc =-1 mA VCE =-10 V kn
(for BCY71 only) f = 1 kHz 2 12
h,e Reverse Voltage Ratio l c = - 1 mA VCE =-10 V
(for BCY71 only) f = 1kHz 20x10-"
hoa Output Admittance l c » - 1 mA VCE =-10 V us
(for BCY71 only) f = 1 kHz 10 60
td Delay Time lc=-10mA VEE=3V ns
(for BCY70 and BCY72 only) IBI = - 1 mA 23 35
tr Rise Time lc=-10mA VEE=3V ns
(for BCY70 and BCY72 only) IB1 = - 1 mA 25 35
u Storage Time lc=-10mA VEE=3V ns
(for BCY70 and BCY72 only) |B1 =— |B2 =— 1 mA 270 350
tf Fall Time lc=-10mA VEE=3V ns
(for BCY70 and BCY72 only) |B1 =- |B2 =-1 mA 50 80
ton Turn-on Time lc=-10mA Vee=3V ns
(for BCY70 and BCY72 only) IBI = - 1 mA 48 65
tod Turn-off Time lc=-10mA VEg=3V ns
(for BCY70 and BCY72 only) IBI =- lea =-1 rnA 320 420
* Pulsed : pulse duration = 300 us. duty cycle « 1 %.

TEST CIRCUIT
Test Circuit for Switching Times.

3.0V

-20V

-20V

VBB=7.0V