Topi

c1

1.ThelargestmarketshareofMEMSpr oduct
scur
rent
lybel
ongst
o(a)mi
crof
lui
dics,
(6)
microsensors,
(c)microaccel
eromet
ers.

2.MEMScomponent
srangei
nsi
zef
rom (
2)1j
um t
o1mm,
(6)1nm t
o1um,
(c)1mm t
o1cm.

3.Onenanomet
eri
s(a)10-
6m,
(5)10-
9m,
(c)10-
12m.

4.Whenwesayadevicei
sinmesoscal
e,wemeant
hedev
icehasasi
zei
nther
angeof(
a)1
um t
oImm,(b)Inm t
o1um, (
ej1mm toIcm.

5.Theori
ginofmicr
osyst
emscanbetracedbackt
othei
nvent
ionofVa)t
ransi
stor
s,(
b)
i
ntegr
atedcir
cui
ts,(
c)si
li
conpi
ezor
esi
stors

6.Amodernintegr
atedci
rcui
tmaycont
ain(
a)100,
000,
(b)1,
000,
000,
e10,
000,
000t
ransi
stor
s
andcapaci
tors.

7.Mini
atur
izat
ionofcomput
erswaspossiblemainl
ybecauseof(a)bet
terstor
agesy
stems,
(b)
repl
aci
ngvacuum tubeswi
thtr
ansi
stor
s,(theinv
enti
onofintegr
atedci
rcui
ts.

8.I
ngener
al,
ami
crosy
stem consi
stsof(
a)one,
(b)t
wo,
(et
hreecomponent
s.

9.Themicr
osensort
hati
scommonl yusedinai
rbagdepl
oymentsy
stemsi
naut
omobi
l
eisa(
a)
pr
essur
esensor,
(býi
nert
iasensor
,(c)chemi
cal
sensor
.

10."Labor
ator
y-on-
a-chi
p"means(
a)performingexper
iment
sonachip,
(b)i
ntegrati
onof
micr
osensorsandactuat
orsonachip,
,
(çXint
egrat
ionofmicr
osy
stemsandmicroelectr
oni
cson
achi
p.

11.Theor
igi
nofmodernmi crof
abri
cat
iontechnol
ogyi
s(a)t
hei
nv ent
ionoft
ransi
stor
s,(
b)t
he
i
nventi
onofi
ntegr
atedci
rcuit
s,(c)t
hei
nv enti
onofmicr
omachi
ning.

12.Thever
yf i
rstsi
gnif
icantmini
atur
izat
ionoccur
redwi
th(
aint
egr
atedci
rcui
ts,
(b)l
apt
op
computer
s,(c)mobiletel
ephones.

13.Theter
m mi
cromachi
ningf
ir
stappear
edi
npubl
i
cin(
a)t
he1970s,
b)t
he1980s,
(c)t
he
1990s.

14.Theter
m LIGAref
ersto(ayapr
ocessformi
cromanufact
uri
ng,
(b)a
microf
abri
cat
ionpr
ocess,
(c)amater
ialt
reat
mentprocess

.15.At
ypi
cal
singl
eULSIchi
pmaycont
ain(
a)one.(
h)10.(
c)100mi
l
li
ont
ransi
stor
s.

16.Thedev
elopmentofi
ntegr
atedci
rcui
tsbegani
n(a)t
he1960s,
(b)t
he1970s,
C)t
he1950s.

17.Thefi
rstdi
git
alcomput
er,
ENI
AC,
wasdev
elopedi
n(a)t
he1960s,
(b)t
he1950s,
e)t
he
1940s.
18.Theaspectr
ati
oofami crosystem componenti
sdefi
nedastherat
ioofJat
hedimensions
i
nt hehei
ghtt
othoseofthesurface,(
b)thedimensi
onsofthesur
facet
othoseoft
heheight,(
c)
thedimensi
onsinwidt
htothoseoft helengt
h.

19.Marketval
ueofmicrosy
stemsisi
nti
matel
yrel
atedt
o(a)v
olumedemand,
(b)speci
al
feat
ures,
(c)perf
ormanceofthepr
oduct
s.

20.Thenostchal
l
engi
ngissuefaci
ngmicr
osyst
emstechnologyis(a)thesmall
sizeoft
he
product
s,(
b)thel
ackofpract
ical
appl
i
cati
ons,(
e)i
tsmulti
-disci
pli
narynatur
e.

Ans:

1.(
b);
2.(
a);
3.(
b);
4.(
c);
5.(
a);
6.(
c);
7.(
c);
8.(
c);
9.(
b);
10.(
c)

11.(
a);
12.(
a);
13.(
b);
14.(
a);
15.(
b);
16.(
c);
17.(
c);
18.(
a);
19.(
a);
20.(
c)
Topi
c2

1.Thefundamentalworki
ngpri
nci
pleofsensorsi
s)t
oconv
ertonef
orm ofener
gyt
oanot
her
for
m,(2)toconvertsi
gnal
s,(
3)toconver
tsigns.

2.Acoust
icsensor
sar
eusedt
odet
ect(
1)sound,
(2)t
emper
atur
e,3Ychemi
cal
composi
ti
ons.

3.Medi
cal
diagnosi
suses(
1)bi
osensor
s,(
2)bi
omedi
cal
sensor
s,(
3)bot
hthesesensor
s

4.Biomedi
cal
sensor
sandbi
osensor
sar
e(1)t
hesamet
hing,
(2)di
ff
erentt
hinos(
3)nei
therof
theabove.

5.Bi
osensor
srequi
re(1)bi
omol
ecul
es,
(2)el
ect
rochemi
cal
compounds,
(3)chemi
cal
compoundstowork.

6.Chemicalsensorsworkont
heprincipl
eof(inter
actionofchemicalandelectri
calpr
opert
ies
ofmater
ial
s,(2)chemical
andbi
ologicali
nter
acti
on,(3)mechanicalandelect
ricali
nter
act
ion.

7.Anymateri
althathasachangeofelect
ri
calpr
opert
iesaft
erbeingexposedtopar
ti
cul
ar
gasescanbeusedasa( )chemical
sensor,(
2)bi
osensor,
(3)ther
mal sensor
.

8.Opti
cal
sensorsworkonthepri
nci
pleof(
1)inputheatgener
atedbyl
i
ght
,2)i
nputphot
on
ener
gybylight
,(3)i
mpactofel
ect
ronsonsoli
dsurface.

9.Pr
essuresensor
sworkont
hepri
nci
pleofYdefl
ect
ingat
hindiaphr
agm,(
2)heat
ingofat
hin
di
aphragm,(
3)magnet
izi
ngat
hindi
aphr
agm bythepr
essur
izedmedium.

10.Thedef
lect
ionofthet
hindiaphr
agm i
nmi cropr
essur
esensor
sismeasur
edby(
1)
mechani
cal
means, (
2)opt
icalmeans,(
3)electr
ical
means.

11.Ther
malsensorswor
konthepr i
nci
pleof(
1)t
her
mal
mechani
cs,
(2)
t
hermometer
s,(
3)t
hermalel
ect
ri
cit
y.

12.Ther
mopi
l
eshav
e(1)one,
(two,
(3)t
hreej
unct
ions.

13.Itt
akesamini
mum of(
1)one,
(2t
wo,
(3)t
hreedi
ff
erentmat
eri
alst
omaket
her
mal
actuat
ionwor
k.

14.Shapememor yall
oysar
emat
eri
alst
hathave)memoryofthei
rshapeatthetemperatur
eof
fabri
cati
on,(2)pr
ogrammedmemoryoft
heiror
igi
nal
shape,
(3)memor yoft
heirori
ginal
propert
ies.

15.Pi
ezoelect
ri
cactuati
onworksonthepri
nci
pleof(1)el
ect
ri
cheat
ing,
(2)mechani
cal
-
el
ectr
ical
conversi
on,(3)el
ect
ri
cal
-mechani
calconversi
on.

16.Ast
hegapbet weent
heelect
rodesgrowssmaller
,theel
ect
rost
ati
cfor
cesf
oract
uat
ion
growst
ronger
,(2)growweaker
,(3)donotchange.
17.El
ectr
ostat
icmotor
sworkonthepri
nci
pleof(1)cl
osinggaps,
(2)al
i
gnmentofopposi
ng
el
ect
rodes,(
3bothcl
osi
ngandal
ignmentofopposingel
ectr
odes.

18.Miçr
oaccel
erometer
sareusedtomeasur
e(1)thevel
oci
ty,
(2)t
heposi
ti
on,
3)t
hedy
nami
c
for
cesassoci
atedwit
har i
gidbodymov
ingatvar
iabl
espeea.

19.Micr
ofl
uidi
c:usedextensi
vel
yin(
1)t
her
momechani
cal
,(2)bi
omedi
cal
,(3)
el
ect
romechanicalanal
ysi
s.

20.Amajorprobl
em i
nmi
crochannel
owi
s(1)
capi
l
layef
fect
,(2)f
ri
cti
onef
fect(
3)pr
essur
e
di
str
ibut
ion.

Ans:

1.
(1)
;2.(
3);
3.(
2);
4.(
2);
5.(
1);
6.(
1);
7.(
1);
8.(
2);
9.(
1);
10.(
3);

11.(
3);
12.(
2);
13.(
2);
14.(
1);
15.(
3);
16.(
1);
17.(
2);
18.(
3);
19.(
2);
20.(
1)
Topi
c3

1,
Ever
ythi
ngonourEart
hismadefrom (1)86,
(2)96,
(3)106st
abl
eel
ement
s,andeach
el
ementhasadi
ff
erentat
omicst
ructur
e.

2.Thecor
eofanat
om i
sa(
1)neut
ron,
(2)nucl
eus,
(3)el
ect
ron.

3.El
ementshav
ediff
erentproper
ti
esbecausetheyhav
edi
ff
erent(
1)at
omi
cst
ruct
ures,
(2)
chemical
composi
ti
ons,(3)physi
calcomposi
ti
ons.

4.El
ementsthathavesimi
larproper
ti
eswhent heyhavethesamenumberof(
1)el
ect
rons,
(2)
prot
ons,
(3)nuclei
intheouterorbi
tofthei
rrespect
iveat
omiestr
uct
ures.

5.Anucl
euscont
ains(
1)neut
ronsandpr
otons,
(2)el
ect
ronsandpr
otons,
(3)neut
ronsand
el
ect
rons.

6.Pr
otonscar
ry(
1)posi
ti
ve,
(2)negat
ive,
(3)nochar
ge

7.El
ect
ronscar
ry(
1)posi
ti
ve,
(2)negat
ive,
(3)nochar
ge.

8.Neut
ronscar
ry(
1)posi
ti
ve,
(2)negat
ive,
(3)nochar
ge.

9.Theout
eror
bitofat
omshasadi
amet
ert
hati
s(1)100,
(2)1000,
(3)10,
000t
imesoft
hatofa
nucl
eus.

10.Aper
iodi
ctabl
econsi
stsof(
1)96,
(2)103,
(3)108el
ement
s.

11.Si
l
iconat
omscont
ain(
1)8,
(2)10,
(3)14el
ect
rons.

12.Si
l
iconat
omshav
e(1)4,
(2)6,
(3)8el
ect
ronsi
nthei
rout
eror
bit
.

13.Ani
oncar
ri
es(
1)el
ect
ri
cchar
ge,
(2)magnet
icchar
ge,
(3)el
ect
rost
ati
cchar
ge

.14.l
onizat
ionenergyi
stheener
gyr
equi
redt
oremov
e(1)neut
rons,
(2)pr
otons,
(3)el
ect
rons
fr
om theouterorbi
tofanatom.

15.Mol
ecul
esar
emadeofbounded(
1)el
ect
rons,
(2)at
oms,
(3)nucl
ei.

16.Thefor
cesthatbi
ndtheatomsinamolecul
ear
ecal
l
ed(
1)i
nter
mol
ecul
arf
orces,
(2)
el
ect
roat
omicforces,
(3)i
nter
atomi
cfor
ces.

17.Theint
ermol
ecul
arf
orcesar
e(1)v
anderWaal
s,(
2)el
ect
rost
ati
c,(
3)el
ect
romagnet
ici
n
nat
ure.

18.Thei
nter
mol
ecul
arf
orces,
ingener
al,
are(
1)pr
opor
ti
onal
,(2)equal
to,
(3)i
nver
sel
y
pr
opor
ti
onal
tot
hedi
stancesbet
weenmol
ecul
es.

19.Thephy si
calbehavi
orofsoli
dmoleculesi
sty
pical
l
y(1)st
ronginki
neti
cener
gyandatomi
c
cohesiv
eforces,
(2)weakinkinet
icener
gyandatomiccohesi
vefor
ces,(
3)weakinki
net
ic
energybutstr
onginatomiccohesiv
eforces.

20.Posit
ivesi
l
iconcanbepr
oducedbydopi
ngwi
th(
1)bor
onat
oms,
(2)phosphor
usat
oms,
(3)
ei
therki
ndofatom.

21.Negati
vesi
l
iconcanbepr
oducedbydopi
ngwi
th(
1)bor
onat
oms,
(2)phosphor
usat
oms,
(3)
ei
therki
ndofatom.

22.Sil
iconisasemiconduct
ingmateri
al.Itcanbemademoreelectr
ical
lyconduct
iveby(
1)a
dopingprocess,
(2)adiff
usi
onprocess,(3)anelect
ri
cimpl
ant
ationprocess.

23.N-
typesi
l
iconi
s(1)l
ess,
(2)mor
e,(
3)aboutequal
l
yconduct
iveasp-
typesi
l
icorwheni
s
dopedwit
hsamedoseofdopant
.

24.Di
ffusioni
sagoodwayt
o(1)coat
,(2)i
mpl
ant
,(3)r
emov
efor
eignmat
eri
alsi
nsi
l
icon
subst
rates.

25.Di
ff
usi
onanal
ysi
sisbasedon(
1)Four
ier
'sl
aw,
(2)Fi
ck'
slaw,
(3)Hooke'
slaw.

26.Pl
asmai
sagast
hat(
1)does,
(2)doesnot
,(3)maycar
ryel
ect
ri
cchar
ges.

27.Tomaint
ainaplasma,
oneneedst
okeepsuppl
yi
ng(
1)hi
ght
emper
atur
e,(
2)hi
ghpr
essur
e,
(3)hi
ghel
ectr
ical
fiel
dtot
hepl
asmachamber.

28.El
ect
rochemist
ryi
nvol
ves(1)chemical
react
ions,
(2)i
oni
zat
ion,
(3)decomposi
ti
onofany
subst
ancecausedbyanelect
ri
ccurrent
.

29.El
ectrol
ysi
sinvol
vestheproduct
ionof(1)chemical
s,(
2)chemi
cal
changes,
(3)i
oni
zat
ioni
n
asubstancebytheappli
cati
onofanelectr
icpotent
ial
.

30.El
ect
rol
ysi
suses(
1)anac,
(2)adc,
(3)ei
theranacoradcpowersuppl
y.

31.Anelect
rol
yteis(
1)anelect
rode,
(2)t
hecont
ainer
,(3)t
hesol
uti
ont
hatconduct
sel
ect
ri
c
cur
renti
nanelectr
oly
sispr
ocess.

32.Ananodei
sthe(
1)posi
ti
ve,
(2)negat
ive,
(3)neut
ral
elect
rode.

33.Acat
hodei
sthe(
1)posi
ti
ve,
(2)negat
ive,
(3)neut
ral
elect
rode.

34.Elect
rohy
drody
namicsdeal
swi
th(
1)di
ssol
uti
on,
(2)mot
ion,
(3)sol
i
dif
icat
ionofaf
lui
d
underanappl
iedel
ect
ri
cfiel
d.

35.Theprinci
pal
useofel
ect
rohydrody
nami
csinmicrosy
stemsisto(
1)conductel
ectr
oly
sisof
minutechemical
s,(
2)moveminuteamount
soffl
uid,
(3)detectmi
nut
eamountsofflui
d.
36.Elect
ro-
osmoti
cpumpingisusedtomov eminut
eamount
sof(
1)homogeneous,
(2)
heter
ogeneous,
(3)anyf
lui
dincapil
l
arypassages.

37.Elect
ropher
eticpumpingi
susedtomov emi nut
eamount
sof(
1)homogeneous,
(2)
heter
ogeneous,(3)anyf
luidi
ncapi
ll
arypassages.

38.Quant
um physicsi
susedt
odescr
ibe(
1)physi
cal
mov
ementofat
oms,
(2)ener
gyt
ranspor
t,
(3)col
l
isi
onsofatomsinMEMSandnanosyst
ems.

39.Aquantum r
epr
esent
sthesmal
l
estamountof(
1)mass,
(2)v
olume,
36.(
3)ener
gyt
hatany
sy
stem cangai
norl
ose.

40.Phot
onshav
ethemassequal
to(
1)anel
ect
ron,
(2)aneut
ron,
(3)zer
o.

Ans:

1.(
2);2.(2)
;3.(1);4.(1);5.(1);6.(
1);7.(
2);8.(3);9.(
2);10(2);11.(
3);12.(
1);13.(
1);14.(
3); 15.
(2)
;16.(1);17.(1)
; 18.(3);19.(3);
20.(1)
;21.( 2)
;22.(1)
; 23.(2);
24.(2);
25.(2);
26.(1);
27.( 3);
28.(3);
29.(3);30.(2);31.(3);32.(1)
;33.(2);34.(2);
35.(2);36.(1)
;37.(2)
;38.(2)
;39.(3);40.
(3)
.
Topi
c4

1.Ingeneral
.mechani
calengi
neeri
ngprinci
plesder
ivedforcont
inuacanbeusedforMEMS
component swi
ththesi
ze(1)l
argerthan1nanomet er,
(2)lar
gerthan1micr
ometer.(
3)l
arger
than1picometer
.

2.Thetheor
yofthi
nplatebendi
ngcanbeusedtoassess(
1)t
hedef
lect
iononly
,(2)st
resses
onl
y.(
3)boththedef
lect
ionandstr
essesi
nthi
ndiaphr
agmsofmi
cropressur
esensors.

3.Squar
ediaphr
agmsarethe(
1)mostpopul
ar,
(2)somewhatpopul
ar,
(3)l
eastpopul
ar
geometr
ytormicropr
essur
esensor
s.

4.From amechanicspointofvi
ew,
themostfavor
eddi
aphr
agm geomet
ryi
nmi
cropr
essur
e
sensorsi
s(1)ci
rcular
.(2)squar
e.(
3)rect
angul
ar.

5.Thepr i
ncipalt
heoryusedi
nmi cr
oaccel
eromet
erdesi
gni
s(1)pl
atebendi
ng,
2)mechani
cal
v
ibrat
ion.(3)str
engthofmater
ial
s.

6.Thenat
ural
frequencyofamicrodev
icei
sdet
ermi
nedbyi
ts(
1)mass,
(2)st
ruct
urest
if
+ness.
(3)massandstruct
urest
if
fness

.7.Micr
odev
icesi
ntheor
ycont
ain(
1)one,
(2)sev
eral
.(3)ani
nfi
nit
enumberofnat
ural
fr
equenci
es.

8.Theanal
ysi
sthatat
temptstodet
ermi
neseveral
oral
lnat
ural
frequenci
esofami
crodev
icei
s
cal
led(
1)modal.(
2)vi
brat
ion.(
3)modelanal
ysi
s.

9."Resonant
"vi
brat
ionofadevicemadeofelasti
cmat er
ial
soccur
swhent hef
requencyoft
he
exci
tat
ionfor
ce(1)appr
oaches.(2)equal
s,(
3)exceedsanyofthenat
ural
fr
equenci
esofthe
devi
ce.

10.Thedashpoti
namass- spr
ingvi
brat
ionsyst
em serv
esthepur
poseofi
ncl
udi
ngt
he(
1)
damping.(
2)accel
erat
ion.(
3)decel
erat
ionef
fectonthesy
stem.

11.Thedampingeff
ecti
nmostmi
croaccel
eromet
erdesi
gni
s(1)v
eryi
mpor
tant
,(2)somewhat
i
mpor t
ant
,(3)noti
mport
ant

12.Thedampi ngeff
ectbycompressibl
eflui
ds(1)i
ncreases.(
2)decreases,
(3)
remainsunchangedwit
hincr
easeoftheinputfr
equencyofthevibr
ati
ngmass.

13.Themov
ementoft
hebeam massi
nfor
ce-
bal
ancedmi
croaccel
eromet
ersi
susual
l
y
measur
edby(
1)pi
ezor
esi
stor
,(2)pi
ezoel
ect
ri
c,(
3)capaci
tancechanges.

14.Avibrat
ingbeam wil
lhav
eitsnat
ural
frequency(
1)i
ncr
eased,
(2)decr
eased,
(3)unchanged
wit
hincreaseoflongi
tudi
nalst
ressi
ntension.

15.Ther
mal st
ressescanbeinducedinmechani
cal
lyconst
rai
nedmicr
odevi
ceOmponent
sby(
1)
uni
for
mt emperat
urerise,
(2)nonuni
formt
emperaturer
ise,
(3)anyt
emperat
urer
ise.

16.Thermal st
ressesinducedinami crodevi
cecomponentmadeofdissi
milarmater
ial
sare
dueto(1)thediff
erenceofcoeffi
cientsofther
malexpansi
onot hemater
ial
s.(2)t
heweakness
ofthebondingi
nterf
ace,(3)thedegradati
onofmateri
alsaf
terbondi
ng.

17.Thermal
str
essesarei
nducedinmicr
odevi
cecomponent
sfreeofmechanical
const
raintsby
(1)uni
formt
emperatur
echange,(
2)nonuni
for
mtemperat
urechange,
(3)uni
formtemperature
withti
me.

18.Thecreepdeformati
oninamat er
ial
becomesser
ious(1)atanyt
emnper
atur
e(2)abov
ehal
f
themelt
ingpoint
,(3)abovehal
fthehomologousmel
tingpoi
nt.

19.Thehomologousmelti
ngpoi
ntofamater
ial
isdef
inedast hemel
ti
ngpointont
hescal
eof
(
1)absol
utet
emper at
ure,
(2)Cel
siust
emper
atur
e,(
3)Fahrenheitt
emper
atur
e.

20.Thepartsofmicr
osyst
emsthatareobviousl
yvul
nerabl
etocr
eepf
ail
urear
e(1)sol
der
bonds,
(2)epoxyr
esinbonds,
(3)si
l
iconerubberbonds.

21.Therearegener
all
y(1)t
wo,
(2)t
hree,
(3)f
ourmodesoff
ract
ureatt
hei
nter
facesof
microdevi
ces.

22.Themostfr
equent
lyoccur
ri
ngf
ract
uref
ail
uremodei
nmi
crost
ruct
uresi
s(1)ModeI
II
,(2)
ModeII,
(3)ModeI.

23.I
nter
facesi
nmicrodevi
cesarev
ulner
abl
eto(
1)mi
xedModeIandI
I,
(2)mi
xedModeIandI
II
,
(3)mi
xedModeI IandII
Ifai
lur
e.

24.Fracturemechanicsanal
ysi
sofinter
facesi
nmicrost
ruct
uresrequi
resthedi
str
ibut
ionof(1)
normal str
esses,
(2)shearst
resses,
(3)boththenor
mal andshearstr
essesatt
hev i
cini
tyofthe
i
nterf
ace.

25.Thefi
nit
eelementmethodi
saviableanal
yti
calt
oolformicr
ostr
uctur
esof(1)simpl
e
geometr
y,(
2)complexgeometr
yandloadi
ng/boundarycondi
ti
ons,
(3)complexloadi
ngand
boundar
yconditi
ons.

26.Theveryfi
rststepinafi
nit
eelementanal
ysi
sis(1)t
ofi
ndtheappr
oxi
mat esol
uti
on,
(2)t
o
sett
hegoverni
ngequat i
onandboundarycondit
ion,
(3)t
osubdi
vi
dethecont
inuum i
ntoa
numberofsubdivi
sions,apr
ocesscal
leddiscr
eti
zat
ion.

27.Thepr
imar
yunknownquant
it
yinaf
ini
teel
ementanal
ysi
sist
hequant
it
ythat(
1)appear
sin
thefor
mulat
ion,
(2)t
hemosti
mpor
tantquant
it
y,(
3)t
hemostdesi
rabl
equant
it
ytobe
deter
mined.

28.Theprimaryunknownquant
it
yinast
ressanal
ysi
sbyt
hef
ini
teel
ement
met
hodi
s(1)
st
ress,
(2)st
rai
n,(3)di
spl
acement.

29.Theconsti
tut
iverel
ati
oninafini
teel
ementanal
ysisr
elat
es(1)theconst
ructi
onof
appropr
iat
eformulat
ions,(
2)thepri
maryandot
heressenti
alquant
iti
es,
(3)t
heloadi
ngand
boundarycondi
ti
ons.

30.Thev
onMisesst
ressrepr
esents(1)t
hestresscomponentf
oll
owi
ngt hevonMisespr
inci
ple,
(2)t
hest
ressf
oraspeci
fi
cmateri
al,(
3)str
essesinastr
uctur
eofcomplexgeomet
ry.

Ans:

1.(
2);
2.(
3);
3.(
1);
4.(
1);
5.(
2);
6.(
3);
7.(
3);
8.(
1);
9.(
2);
10.(
1)

11.(
3);
12.(
1);
13.(
3);
14.(
1);
15.(
3);
16.(
1);
17.(
2);
18.(
3);
19.(
1);
20.(
1)

21.(
2);
22.(
3);
23.(
1);
24.(
3);
25.(
2);
26.(
3);
27.(
1);
28.(
3);
29.(
2);
30.(
3)
Topi
c5

1.Viscosit
yofafl
uidi
sameasur eoff l
uid'
sresi
stancet
omot
ioncr
eat
edby
:1)
Pressure.(
2)Dri
vi
ngforces,
(3)shearst
ress

2.Newtoni anfl
uidsar
edefinedbythei
rrel
ati
onshi
pbet weentheshearstr
essandhear
Str
ainrates,whichexhi
bit
s( 1)l
i
near,(
2)nonl
inear
,(3)combinedli
nearandnonl
inear
charact
eristi
cs.

3.Reynol
dsnumberi
srel
atedt
othechar
act
eri
sti
csof(
1)ast
ati
onar
y,(
2)amov
ing.(
3)
anyst
ateoft
hefl
uid.

4.Reynoldsnumberi
spr
opor
ti
onal
to(
)thet
rav
eli
ngdi
stance,
(2)t
hev
eloci
ty,
(3)t
he
pressur
eofaf l
uid

5.Cont rolvol
umei nafl
uiddynamicanaly
sismeans()aconveni
entl
yselectedvol
ume
ofthefluidfortheanal
ysi
s.(2)Thevolumeofthef
luidi
nwhichtheReynoldsnumberi
s
constant,(3)t
hev ol
umeofthef l
uidi
nwhichthefl
uidpr
opert
iesareconstant.

6.Alaminarf
lui
dfl
owmeansa(
1)l
owv
eloci
ty,
(2)hi
ghv
eloci
ty,
(3)quasi
-st
agnant
f
lui
dflow.

7.Laminarf
lowofcompressi
blef
lui
dsnormal
lyt
akespl
acewi
thRey
nol
dsnumberi
n
t
herangeof(1)0to10.(
2)10to100,(3)100t
o1000.

8.I
ngeneral
,fl
uidfl
owsi
nmi
crosy
stemsar
e(1)l
ami
nar
,(2)t
urbul
ent
,(3)nei
ther
l
aminarnort
urbulent
.

9.Thecont
inui
tyequat
ioni
susedtoeval
uate(
1)v
olumet
ri
cflowr
ate,
(2)r
elat
ionshi
p
bet
weenthemotionandthedr
ivi
ngfor
ces,(
3)t
hei
nducedfor
cesi
namov i
ngflui
d.

10.Themoment
um equat
ioni
susedt
oev
aluat
e(1)v
olumet
ri
cfl
owr
ate(
2)r
elat
ionshi
p
bet
weent
hemot
ionandt
hedr
ivi
ngf
orces,
(3)t
hei
nducedf
orcesi
namov
ingf
lui
d.

11.Wewi l
luse(1)continui
tyequat
ion,
(2)momentum equati
on,(
3)equat
ionofmot
ion
toassessthefl
uidinducedforcesonmicrosy
stem component
s.

12.Hydr
auli
cdiameterisusedtoevaluat
ethecr
oss-sect
ional
areaoff
lui
dfl
owi
ngi
n(1)
ci
rcul
ar,
(2)rect
angular
,(3)anyshapeofcondui
ts.

13.CFDstandsfor(1)cr
it
ical
flui
ddy
nami
cs,
(2)comput
ati
onal
flui
ddy
nami
cs,
(3)
computer
izedfl
uiddynamics.

14.Navier
-Stokesequat
ionsr
elate(
1)pr
essur
e-v
eloci
ty,
(2)pr
essur
e-densi
tychange,
(3)
pressur
e-vi
scosit
yinamov i
ngflui
d.

15.Surf
acetensi
oninafl
uidi
saform of(1)appl
iedt
ensi
onatthesur
faceoft
hefl
uid,
(2)
anexist
ingt
ensionatt
hefl
uidsur
face,(
3)tensi
onthatmakest
hesurf
aceofthef
lui
d.

16.Surf
acet
ensi
oni
s.t
hepr
inci
pal
causef
or(
1)capi
l
lar
y,(
2)newt
oni
an,
(3)l
ami
narf
low
ofaflui
d.

17.Thecoeffi
cientofsurf
acetensi
onofaflui
disameasureoft
hemagni
tudeoft
he(
1)
i
nherentst
rength,(2)sur
facet
ension,
(3)t
opologyofaf
lui
dsurf
ace.

18.Thecapil
laryheightofafl
uidi
nasmal
ltubeis(
1)equal
to,
(2)di
rect
lypr
opor
ti
onal
to,
(3)i
nverselyproporti
onal
tothedi
amet
erofthet
ube.

19.Pressuredr
opattwopoint
sinaf l
uiddri
vest
heflowofthefl
uidi
naci
rcul
arcondui
t.
I
tisinversel
ypropor
ti
onal
tothe(1)second,(
2)t
hir
d, (
3)f
ourt
hpoweroft
hediameterof
theconduit.

20.Thedriv
ingfor
ceinthepi
ezoel
ectr
icpumpi
ngoff
lui
dsi
nmi
nut
econdui
tsi
soft
he(
1)
l
inear
,(2)surf
ace,
(3)vol
umetri
cnatur
e.

21.Ar aref
iedgasmeanst
hegasi
sat(
1)ext
remel
ylowpr
essur
e,(
2)i
nter
medi
ate
pressure,(
3)vacuum.

22.Agoodest
imat
eoft
heMFPf
orgasesi
s(1)65nm,
(2)75nm,
(3)130nm.

23.Agoodest
imat
eoft
heMFPf
orl
i
qui
dsi
s(1)65nm,
(2)75nm,
(3)130nm.

24.TheKnudsennumberisdef
inedas(1)thedensi
tyofthegasoverthephysi
cal
size
oftheconfi
nement
,(2)t
hemeanf r
eepathoverthephysi
calsi
zeoftheconfi
nement,(
3)
tl
i
.eveloci
tyoft
hegasovert
hespeedofsound.

25.Conv
enti
onalf
lui
ddynami
cst
heor
iesar
eval
i
dfor(
1)v
erysmal
l
,(2)l
arge,
(3)v
ery
l
argeKnudsennumbers.
26.TheMachnumberisdef
inedas(1)thedensi
tyoft
hegasoverthephysi
calsi
zeof
theconfi
nement
,(2)t
hemeanfreepat
hov ert
hephysi
cal
sizeoft
heconferment,
(3)t
il
e.
Veloci
tyoft
hegasovert
hespeedofsound.

27.Agasisconsi
der
edtobecompr
essi
blei
ftheMachnumberi
s(1)l
esst
han,
(2)equal
to,
(3)gr
eatert
han0.
3.

28.Thelar
gert
heKnudsennumber
,theconf
inementoft
hegasbecomes(
1)smal
l
er,
(2)
l
arger,
(3)r
emainst
hesame.

29.Aruleoft
humbtocl
assi
fyar
aref
iedgasi
s(1)Kn<0.
1,Ma<0.
3;(
2)Kn>0.
1,Ma<
0.
3;(3)Kn>0.1,Ma>0.
3.

30.TheNavier-
Stokesequati
onscanbereasonabl
yusedf
orgasf
lowwi
thaKnudsen
numberthatislessthan(
I)0.
0I,(
2)0.1,
(3)1.0.

31.Onecoul
dusetheNavier
-Stokesequat
ionforgasfl
owbetweent
hev
aluesof0.
01
and0.1byusi
ng(1)any
,(2)nonsl
ip,(
3)sl
ipboundarycondi
ti
on.

32.Thermalconduct
ivi
tyofamater
ial
isameasur eofi
ts(l)conduct
ancetoheat
,(2)
r
esist
ancetoconducti
ngheatandel
ectri
cit
y,(
3)speedofheatconducti
on.

33.Metal
sare(I)bet
terthan.(
2)wor
set
han,
(3)aboutt
hesameassemi
conduct
ors
andcer
amicsinconducti
ngheat.

34.Thennaldi
ff
usi
vi
tyofamat er
ial
isameasureofits(J)conduct
ancetoheat
,(2)
resi
stancet
oconduct
ingheatandelect
ri
cit
y,(
3)speedofheatconduct
ion.

35.Heatfl
uxisameasur
eofheatconduct
ioni
nasol
i
dperuni
t(I
)lengt
h,(
2)ar
ea.(
3)
vol
umef oragiv
enper
iodoft
ime.

36.Heatf
luxi
sa(1)scal
ar,
(2)v
ect
or,
(3)t
ensorquant
it
y.

37.Heatgenerati
oninasol
i
dbyelectr
icresi
stanceisrel
atedto(I)cur
rentand
resi
stance,
(2)vol
tageandr
esi
stance,
(3)inductanceandresi
stance.

38.Formi
crothem1al act
uators,
onewouldchoosetheactuat
ingmateri
alswi
th(
1)hi
gh
ther
malconduct
ivi
ty,
(2)highthermal
dif
fusi
vi
ty,(
3)neit
heroftheabove.

39.Newton'
scool
ingl
awisusedformicrosystem component
sincont
actwi
th(
1)f
lui
ds,
(
2)anot
hersoli
dcomponent
,(3)anysubstance.

40.Theheatt
ransfercoeff
ici
entofaflui
dincont
actwithasol
i
dis(1)equal
.(2)di
rect
ly
propor
ti
onalt
o,(3)inver
sel
yproport
ionaltot
heveloci
tyoft
hefl
uidf
low.

41.Thenat
uralconvect
iveheatt
ransferi
spromptedby(l
)thedri
vingfor
cesofthefl
uid,
(
2)thepr
essuredropinthefl
uid,
(3)thechangeofdensi
tyofthef
luidduetoheati
ngof
t
hef
lui
d.

42.Thesur
faceoft
hesol
idbecomesvir
tual
l
yimpermeabl
etoheati
fthesur
roundi
ng
fl
uidi
smov i
ngat(I
)hi
gh,
(2)l
ow,(3)st
agnantv
eloci
ty.

43.ThelargertheNussel
tnumber
.the(
I)l
arger
,(2)smal
l
er,
(3)samet
heheatt
ransf
er
coef
fi
cientinthefl
uid.

44.1nt her
mal l
y-
actuatedmicropumps,oneneedstopayat
tent
iontothe(l
)conduct
ive,
(2)convect
ive,(
3)radiati
veheattr
ansf
erbetweentheact
uat
ingelementsandthe
contact
ingfl
uid.

45.Whenathermal
ly
-actuat
edel
ementisincontactwit
haworki
ngfl
uid,
theinter
face
temper
atur
eisnormall
y(1)l
owerthan,
(2)aboutthesameas,
(3)hi
gherthanthebulk
fl
uidt
emperat
ure.

46.Therearegeneral
l
y(1)3,(2)4,
(3)5t
ypesofboundar
ycondi
ti
onsi
nvol
vedi
nheat
conduct
ionanal
ysisofsol
ids.

47.Whendesigni
ngather
mall
y-
actuatedbeam -
element,onewil
lbepr
imar
il
yconcer
ned
with(I
)thewei
ghtoft
hebeam,(2)themechani
cal st
rengthoft
hebeam,(
3)thet
hermal
responseoft
hebeam.

48.Heatconducti
onanal
ysisi
snecessar
yforthesubsequent(1)t
her
malstr
ess.(
2)
heatdi
ssipat
ion,
(3)saf
etyanal
ysi
sinthedesi
gnofat her
mally-
act
uat
edmicrodevi
ce.

49.Heattr
anspo11ationinsol
i
dsinmacroscal
eisby(
1)vi
brati
onofthel
att
icesof
molecul
es.(2)t
hemov emenLofphononsandphot
onsinmolecul
es.(
3)t
hemov ement
ofel
ectr
onsi nmolecules.

50.Heattransportati
oninsoli
dsi
nsubmicromet
erandnanoscal
esisdominat
edby(1)
t
hev i
brat
ionoft helatt
icesofmol
ecul
es.(
2)themovementofphononsandphotonsi
n
molecul
es,(3)themov ementofel
ectr
onsinmolecul
es.

51.MFPstandsfor(I
)molecularf
reepat
h.(
2)mi
nimum f
reepat
h,(
3)meanf
reepat
h
forener
gycar
ri
ersinasubstance.

52.MFTstandsfor(I
)molecularf
reet
ime,
(2)mi
nimum f
reet
ime,
(3)meanf
reet
ime
forener
gycarr
ier
sinasubstance.

53.Oneneedstobeconcer
nedwit
htheval
i
dityofusingcontinuum heatt
ransfer
theor
ieswhent
hesi
zeofthesol
i
dsis(1)great
erthan,(2)aboutequalto,
(3)lessthan1
µm.

54.Thethermalconduct
ivi
tyofsol
i
dsofsubmicromet
erandnanoscal
eis(l)l
esst
han.
(2)aboutequal
to,(3)gr
eatert
hanthev
alueofthesamemateri
alatmacroscal
e.
 55.Theaddit
ional t
ermintheheatconduct
ionequati
onforsol
i
dsofsubmicr
ometerand
nanoscal
esisrelatedto(1)theext
rati
me.( 2)Theext
ravel
oci
ty.(
3)t
heextr
aheatin
heattr
ansfor
mat ion.

Ans:

1.(
3);2.(1)
;3.(2);4.(2);5.(3);6.(
1);7.(
2);8.(1);9.(
1);10.(3);11.(2);12.(3);13.(2);14.(1);
15.(3);
16.(1);17.(2);18.(3);19.(3)
;20.(2);21.(1);
22.(1);23.(3);24.(2);25.(1);26.(3);27.
(1)
;28.(1);29.(2)
; 30.(1);31.(3);
32.(1)
;33.( 1)
;34.(3)
; 35.(2)
; 36.(2)
; 37.(1)
; 38.(2)
; 39.(1)
;
40.(2);
41.(3);42.(3);43.(1);44.(2)
;45.(3);46.(1);
47.(3);48.(1);49.(1);50.(2);51.(3);52.
(3)
;53.(3);54.(1)
; 55.(1)

Topi
c6

1.Theappli
cati
onoft
hescali
nglawsinmini
aturi
zati
onistoassesstheconsequences
on(1)thephysi
cal
eff
ect
,(2)theeconomi
ceffect
,(3)themarketef
fectonminiat
urized
product
s.

2.Scal
i
ngl
awsarederi
vedf
rom (
1)desi
gnengi
neer
s'exper
ience,
(2)t
hel
awsofphy
sics,
(3)t
hemar
ketdemands.

3.Scal
i
ngingeometr
yiscri
ti
cal
inmini
atur
izi
ng(1)movi
ngcomponent
s,(
2)sensi
ng
component
s,(
3)over
alldi
mensi
onsofMEMSpr oduct
s.

4.TheTri
mmer'
sforcescal
ingvectorisusedtoassessmini
atur
izat
ionr
elat
ingt
o(1)
heatf
lowinsol
i
ds,(
2)flui
dflow,(
3)rigid-
bodydynamicsi
nthedesignofMEMS.

5.Fororder1scal
ingsuchassurface-
to-
vol
umescal
ing,t
heaccel
erat
ionv
ari
es(
1)
l
inear
ly,
(2)tothesquarepower
,(3)tothecubi
cpower.

6.Thereasonwhyel ect
rost
aticf
orcesar
efavor
edovertheelect
romagneti
cforcesin
micr
oactuationist
hatel
ectr
ostat
icfor
cesscal
e(1)bett
er,(
2)wor se,
(3)aboutthe
sameasel ectr
omagneti
cforces.

7.El
ect
romagnet
icf
orcesscal
e(1)2,
(2)3,
(3)4or
der
sofmagni
tudewor
set
han
 el
ect
rost
ati
cfor
ces.

8.Thepowerl
ossduet
oelectr
icresi
sti
vi
tyi
s(1)muchmor
esev
ere,
(2)l
esssev
ere,
(3)
aboutt
hesameinsmal
l-
sizedsystems.

9.Pressur
edropinafl
uidf
lowingthr
oughasmall
ercir
cularcondui
tis(
1)muchgr
eat
er,
(2)aboutequal
to,(
3)muchlessthanthati
nal
argerconduit
.

10.Thevolumet
ri
cfl
owoffl
uidi
nasmall
erci
rcul
arcondui
tis(1)muchgr
eat
er,
(2)
aboutequalt
o,(
3)muchsmall
ert
hant
hatinalar
gercondui
t.

11.Theeff
ectofsurf
acetensi
ononflui
dflowi
ngi
nacapi
ll
aryt
ubemakest
hepressure
drop(1)muchgreat
er,(
2)aboutequdto,(
3)muchl
esst
hanthesamefl
owinmesosize
tubes.

12.Theeff
ectofsurf
acetensi
ononflui
dfl
owinginacapi
ll
aryt
ubemakesthe
vol
umetri
cflow(1)muchgreatert
han,(
2)aboutequal
to,
(3)muchl
essthant
hesame
fl
owinmesosizetubes.

13.Heatf
lows(
1)f
ast
er,
(2)sl
ower
,(3)aboutt
hesamei
nasmal
l
ersol
i
dthani
nal
arger
sol
id.

14.Themodeofheattransmissi
oningasi
next
remel
ynar
rowpassagesi
s(1)
conduct
ion,
(2)conv
ect
ion,(
3)radi
ati
on.

15.Heattr
ansmissi
oningasesi
sdr
ast
ical
l
ydi
ff
erenti
nanarr
owpassageofsi
zel
ess
than(
1)-5.
A,(2)7A.(3)9Awher
eAist
hemeanfreepat
hofgasmol
ecules.

Ans:

1.(
1);
2.(
2);
3.(
1);
4.(
3);
5.(
2);
6(1)
;7.(
1);
8.(
1);
9.(
1);
10.(
3);
11.(
1);
12.(
3);
13.(
1);
14.(
1);
15.
(2)
Topi
c7:

1.Asubstratei
s(1)asublayeri
nMEMS, (
2)af
latmi
croscopi
cobj
ect
,(3)af
lat
macroscopicobj
ecti
nmi croel
ectr
oni
cs.

2.Asemiconductingmateri
alcanbemadet obecomeanel ect
ri
callyconduct
ino
materi
alby(1)applyi
nghighelect
ricvolt
age,(2)appl
yinghi
ghcurrent,
(3)i
ntr
oduci
ng
ther
ightki
ndoff orei
gnatomsi nt
ot hesemiconducti
ngmateri
al.

3.Si
li
conhasaYoung'
smodul
ussi
mil
art
othatof(
)al
umi
num,
(2)st
ainl
essst
eel
,(3)
copper
.

4.Si
li
conhasamassdensi
tysi
mil
art
othatof(
1)al
umi
num,
(2)st
ainl
essst
eel
.(3)
coppe.

5.Thepri
ncipal
reasonwhysi
li
coni
sanidealmater
ial
forMEMSis(1)i
tsdi
mensi
onal
st
abil
it
yoverawiderangeoft
emper
atur
es,(2)i
tisl
i
ghtandst
rong,
(3)i
tisr
eadi
ly
avai
l
able.
6.Sil
iconhasacoeff
ici
entoft
hermalexpansi
on(
1)hi
ghert
han,
(2)l
owert
han,
(3)
aboutthesameasthatofsi
li
condioxi
de.

7.The300-
mm waf
ersoff
er(
1)2,
(2)2.
25,
(3)2.
5ti
mesmor
ear
eaf
orsubst
rat
est
han
t
hatby200-
mm waf
ers.

8.Thel
engt
hoft
hel
att
iceofasi
l
iconcr
yst
ali
s(1)0.
543,
(2)0.
643,
(3)0.
743
nanomet
er.

9.Mil
ler
'sindicesareusedtodesi
gnat
e(1)t
hel
engt
h,(
2)t
hepl
ane,
(3)t
hev
olumeofa
face-
centeredcubiccry
stal
.

10.The(
100)pl
anei
nasi
l
iconcr
yst
alconsi
stsof(
1)5,
(2)8,
(3)6at
oms.

11.The(
110)pl
anei
nasi
l
iconcr
yst
alconsi
stsof(
1)5,
(2)8,
(3)6at
oms.

12.The(
111)pl
anei
nasi
l
iconcr
yst
alconsi
stsof(
1)5,
(2)8,
(3)6at
oms.

13.Thegrowt
hofsi
l
iconcr
yst
alsi
ssl
owesti
nthe(
1)<100>,
(2)<110>,
(3)
111>
di
recti
on.

14.Si
l
iconconduct
sheat(
1)50,
(2)150,
(3)200t
imesf
ast
ert
hansi
l
iconoxi
de.

15.Si
l
iconcarbi
defi
lmsar
eusedt oprot
ect(1)t
heunder
lyi
ngsubst
rat
es,
(2)t
he
i
ntegr
atedci
rcui
ts,
(3)t
heelect
ri
cint
erconnect
sinamicr
osyst
em.

16.Si
li
conni
tr
idei
s(1)t
oughert
han,
(2)weakert
han,
(3)aboutt
hesameassi
l
iconi
n
str
engt
h.

17.Pur
eandsi
ngl
e-cr
yst
alsi
l
icon(
1)exi
stsi
nnat
ure,
(2)i
sgr
ownf
rom speci
al

pr
ocesses,
(3)i
smadebyel
ect
rol
ysi
s.

18.Wafer
susedinMEMS2ni mi
croel
ect
roni
csar
e(1)theproduct
sofaSiugcr
yst
al
si
li
conbo:'
{2)ar
esynt
hesi
zedfr
om si
li
concompounds,(
3)existi
nnat
ure.

19.MEMSdesi
gnengi
neer
sareadvi
sedt
oadopt(
1)anysi
ze.(
2)acust
om speci
fi
ed
si
ze.(
3)Ani
ndust
ri
alst
andar
dsiz
eofwafer
.

20.Thet
otal
numberofat
omsi
nasi
l
iconuni
tcr
yst
ali
s(1)18,
(2)16,
3)14

21Thetoughestpl
anef
orpr
ocessi
ngi
nasi
ngl
esi
l
iconcr
yst
ali
s(1)t
he100)pl
ane,
(2)
the(
110)plane,
(3)t
he(
111)pl
ane.

22The54.
74°sl
opei
nthecav
ityofasi
l
icondi
eforapr
essur
esensori
s(1)det
ermi
ned
bychoi
ce,(
2)aresultoft
hecryst
al'
sresist
ancetoetchi
ngi
nthe(
11l
)pl
ane,
(3)ar
esul
t
oft
hecryst
al'
sresi
stancetoet
chinginthe(110)pl
ane.

23.Pol
ysi
li
conispopularbecausei
tcaneasi
l
ybemadeasa(
1)semi
conduct
or,
(2)
i
nsulat
or,
(3)el
ectr
ical
conductor.

24,
Polysi
li
confi
l
msar eusedinmicr
osyst
emsas(
1)di
elect
ri
cmat
eri
al,
(2)subst
rat
e
mat
eri
al,(
3)el
ectr
ical
l
yconducti
ngmateri
al.

25.Theel
ect
ri
cal
resi
stanceofsi
l
iconpiezor
esist
orsvari
esin(
1)al
ldi
rect
ions,
(2)onl
y
i
nthepref
err
eddi
rect
ions,(
3)nei
theroftheaboveappli
es.

26.Iti
scustomarytorelat
esi
li
conpi
ezor
esi
stancechanget
o(1)def
ormati
ons,
(2)
str
ains,(
3)str
essesinducedi
nthepi
ezor
esi
storsinMEMSandmi cr
osyst
ems.

27.Thereare(1)t
hree,
(2)f
our
,(3)si
xpi
ezor
esi
sti
vecoef
fi
cient
sinsi
l
icon
pi
ezoresi
stors.

28.Thesi
nglemostseri
ousdisadvant
ageofusi
ngsi
li
conpiezoresi
stori
s(1)thehigh
costofpr
oduci
ngsuchresi
stors,(
2)it
sstr
ongsensi
ti
vi
tyt
osi gnalt
ransduct
ion,(
3)it
s
str
ongsensi
ti
vi
tyt
ot emperat
ure.

29.Gal
l
ium ar
seni
dehas(
1)6,
(2)7,
(3)8t
imeshi
gherel
ect
ronmobi
l
ityt
hansi
l
icon.

30.Gal
li
um arsenideischosenov
ersi
li
conf
ortheuseinmicr
o-opti
cal
devi
cesbecause
ofit
s(1)opt
icalrefl
ecti
vi
ty,(
2)di
mensi
onal
stabi
li
ty,
(3)hi
ghelect
ronmobi
li
ty.

31.Gal
li
um ar
seni
deisnotaspopularassi
l
iconinMEMSappli
cati
onbecauseof(
1)it
s
hi
ghercosti
nproduct
ion,
(2)di
ff
icul
tyofmechanical
wor
k,(
3)lowmechanical
str
engt
h.

32.Quar
tzcr
yst
alshav
etheshapeof(
1)acube,
(2)at
etr
ahedr
on,
(3)abody
-cent
ered
cube.

33.Iti
scust
omarytor
elat
ethevol
tageproducedbyapiezoelect
ri
ccr
yst
alt
othe(
1)
def
ormati
ons,(
2)t
emperat
ure,
(3)str
essesinducedi
nthecrystal
.

34.Appli
cat
ionofmechanicaldeformati
ontoapiez0el
ectr
iccr
yst
alcanresulti
nthe
product
ionof(1)el
ect
ri
cresistancechange,
(2)el
ectri
ccurr
ent
change,(
3)electr
ic
volt
agechangeinthecry
stal.

35.Mostpi
ezoel
ect
ri
ccr
yst
als(1)exi
sti
nnat
ure,
(2)ar
emadebysy
nthet
icpr
ocesses,
(3)ar
emadebydopingt
hesubstr
ate.

36.Apol
ymeri
samat
eri
alt
hati
smadeupofmany(
1)smal
l
-si
ze,
(2)l
arge-
size,
(3)
l
ong-
chai
nmol
ecul
es.

37.I
ngeneral
,pol
ymer
sar
e(1)el
ect
ri
cal
l
yconduct
ive,
(2)semi
elect
ri
cal
l
yconduct
ive,
(3)i
nsul
ator
s.

38.Pol
ymer
s(1)can,
(2)cannot
,[5)maynev
erbemadeel
ect
ri
cal
l
yconduct
ive.

39.TheLBpr
ocessisusedt
opr
oduce(
1)t
hinf
il
ms,
(2)di
es,
(3)pi
ezoel
ect
ri
cpol
ymer
s
i
nMEMSandmi crosyst
ems.

40.MEMSandmicrosyst
em packagi
ngmateri
alsar
e()r
estr
ict
edtomicr
oelect
roni
cs
packagi
ngmat
eri
als,
(2)j
ustaboutal
lengi
neeri
ngmater
ial
s(3)semi
conducti
ng
materi
als.

Ans:

1.(
2);2.(3)
;3.(2);4.(1);5.(1);6.(
1);7.(
2);8.(1);9.(
2);10.(1);11.(2);12.(3);13.(3);14.(2);
15.(1);
16.(1);17.(2);18.(1);19.(3)
;20.(1);21.(3);
22.(2);23.(3);24.(3);25.(2);26.(3);27.
(1)
;28.(3);29.(2)
; 30.(3);31.(1);
32.(2)
;33.( 1)
;34.(3)
; 35.(1)
; 36.(3)
; 37.(3)
; 38.(1)
; 39.(1)
;
40.(2)

Topi
c8:

1.mi
crofabr
icat
iontechnol
ogesar
edev
elopedspeci
fi
cal
l
ytoshapest
ruct
uresi
n(1)
macr
o-(2)meso-(3)microscal
e

2.Est
abl
ishedmicr
ofabri
cat
iont
echniquespr
imar
lyi
nvol
ved(
elect
romechani
cal
)(2)
el
ectr
ochemical
(3)phy
sical
chemical
means
3.AclassI000cl
eanroom i
sdefinedasoneinwhi
cht henumberofdustpart
icl
es
smal
lerthan0.
5µ,misless.
than1000percubi
c(1)inch,(
2)foot
,(3)meter
.

4.Thedustpar
ti
clesi
zeusedi
ndef
ini
ngcl
eanr
oom ai
rqual
i
tyi
s(l
)0.
05µ,
m,(
2)0.
5
µ,
m,(3)5µ,m.·

5.Thehi
ghertheclassnumberofacl
eanr
oom,
the(
I)cl
eaner
,(2)di
rt
ier
,(3)nei
therwi
l
l
betheai
rintheroom.

6.Theai
rqual
it
yinaty
pical
urbanenvir
onmenti
sequi
val
entt
oacl
eanr
oom ofcl
ass
(
1)50,
000,(
2)500,
000,
(3)5,
000,000.

7.Photoli
thogr
aphyi
susedinmicrofabr
icat
ionbecause(
1)weneedtot
akeaphotogr
aphoft
he
m1cr odev
ice(2)t
ocreat
epatt
ernsinmicroscal
eonsubstrat
es,
(3)t
ocr
eat
epict
uresi
n
microscal
e.

8.Thephot
oresi
stthat,af
terexposur
etoli
ght,di
ssol
vesi
ndev
elopmenti
s(1)t
heposi
ti
vet
ype,
(2)t
henegat
ivetype,(
3)eitherposi
ti
veornegati
vety
pe.

9.Phot
oli
thogr
aphyusingpositi
ve-
typephotoresi
stsr
esul
tsi
n(1)bet
ter
,(2)poor
er,
(3)about
t
hesameef f
ectthanusingnegati
vephotor
esists.

10.Typi
cal
thi
ckness·
ofphot
oresi
stsi
naphot
oli
thogr
aphi
cpr
ocessi
s(1)0.
1to1.
0µ,
m,(
2)
0.
5t o2.
0µ,m,(
3)Ito2µ.,
m.

11.Commonlightsour
cesusedi
nphot
oli
thographi
cpr
ocesshav
ewav
elengt
hsi
nther
angeof
(I
)I00to300nm, (
2)300to500nm,(
3)500t o700nm.

12.Thedev el
opmentofposi
ti
vephot
oresi
stsi
s(1)morecompl ext
han,
(2)l
esscompl
ext
han,
(3)aboutequall
yascomplexast
hatofnegati
vephot
oresi
sts.

13.I
onimpl ant
ati
oni
soneof(
I)t
wo,
(2)t
hree,
(3)f
ourt
echni
quesf
requent
lyusedf
ordopi
ng
semiconductor
s.

14.I
oni
mplant
ati
oni
simpl
ant
ingf
orei
gnsubst
ancesby(
I)mel
ti
ng,
(2)i
nser
ti
onbyf
orce,
(3)
sl
owdif
fusi
on.

15.Thei
onimplant
ati
onpr
ocesst
akespl
aceat(
I)hi
ght
emper
atur
e,(
2)r
oom t
emper
atur
e,(
3)
l
owtemperat
ure.

16.Acommonener gysourceusedfori
onimplant
ati
oni
nvol
ves(1)
ani
onbeam,
(2)i
ntense
heat
ing,
(3)hi
gh-
energyel
ectromagnet
icfi
elds.

17.Thei
mplant
edforei
gnsubst ancebeneatht
hesubstrate'
ssurf
aceexhi
bit
s(1)uni
form
di
stri
but
ioni
ndensit
y,(2)nonunif
orm di
stri
but
ionindensit
ywiththel
essneart
hesurface,
(3)a
di
stri
but
iont
hatdependsont hetemperatur
eintheprocess.
18.Dif
fusi
oni
susedfordopi
ngsemiconduct
ors.I
tis(l
)sl
owert
han,
(2)f
ast
ert
han,
(3)about
thesamespeedasthei
onimplant
ati
onprocess.

19.Thedi
ff
usi
onpr
ocesst
akespl
aceat(1)hi
gh,
(2)r
oom,
(3)l
owt
emper
atur
e.

20.Thedi ff
usedforei
gnsubstancebeneaththesubst
rate'
ssur
faceexhibi
ts(1)uni
for
m
di
stri
butionindensi
ty,
(2)nonunif
orm di
str
ibuti
onindensit
ywit
hthehighestneart
hesurf
ace,
(3)
adist
ributi
onthatdependsonthet emper
atureint
heprocess.

21.Amathemati
calmodel
oft
hedi
ff
usi
onpr
ocessi
sbasedon(
1)Four
ier
'sl
aw,
(2)Newt
on'
s
l
aw,(3)Fi
ck'
slaw.

22.Wetoxi
dat
ionofsi
li
coni
sof
tenpr
efer
redbecauseof(
1)bet
terqual
i
tyofSi
02,
(2)f
ast
er
oxi
dat
ion,(
3)l
owercost.

23.Oxidati
onofsili
consubst
rat
esis(1)desi
redforprot
ecti
onofthesubst
rat
esur
face,
(2)
neededforlocal
electr
icandt
hermali
nsul
ati
on,(3)anunavoi
dabl
ephenomenon.

24.Theki
net
icsofther
mal oxi
dati
onisusedt
oassesst
he(1)gr
owt
h,(
2)er
osi
on,
(3)pl
ati
ngof
si
li
conoxi
delayer
sinsil
iconsubstr
ates.

25.Onet
orri
sequal
to(
1)1i
nH20,
(2)1cm Hg,
(3)1mm Hgpr
essur
e.

26.Thecolorofoxi
dizedsi
li
conobserv
edunderwhi
tel
i
ghtr
epr
esent
s(1)onl
yone,
(2)t
wo,
(3)
sever
alspecif
ict
hicknessoftheoxi
delay
er.

27.Thedeposit
ionpr
ocessi
nmi cr
ofabri
cat
ioncandeposi
t(1)onl
yor
gani
c,(
2)onl
yinor
gani
c,
(3)anymater
ial
sontosubst
rat
esurfaces.

28.Ther
earegener
all
y(1)t
wo,
(2)t
hree,
(3)f
ourt
ypesofdeposi
ti
oni
nmi
croel
ect
roni
csand
micr
omachi
ning.

29.CVDiseffect
iveindeposit
ingforei
gnmater
ialsov
ersil
iconsubst
rat
esbecauseitisa
processt
hat(1)isthermal
lyacti
vated,(
2)combinesmechanical
andchemical
diff
usion,
(3)
combinesthermaldif
fusi
onandchemi calr
eact
ions.

30.Thenecessaryi
ngredi
ent
sinCVDar e(1)pl
asmaandchemical
react
ant
s,(
2)car
ri
ergasand
chemical
reactant
s,(
3)chemical
react
antsandchar
ge-car
rymg10ns.

31.CVDpr
ocessesr
equi
ret
hesubst
rat
e'ssur
facet
obe(
1)col
d,(
2)moder
atel
yhot
,(3)v
ery
hot
.

32.Bett
erresul
tsinCVDareachi
evableby(1)i
ncr
easi
ngthepressur
e,(
2)de-
creasi
ngt
he
pressur
e,(
3)mai nt
aini
nghi
ghconstantpr
essur
einthepr
ocess.

33.Theboundarylayercreat
edbetweenthefl
owingcar
ri
ergasandt
hesubstrat
esur
facei
na
CYDprocess(1)retards,
(2)enhances,
(3)hasnoeff
ectontheCVDprocess.
34.Thethi
cknessoft
heboundarylay
erinaCVDprocess(1)i
ncr
eases,
(2)decr
eases,
(31
rer
rminsconst
antwit
hadecreasedveloci
tyoft
hecar
ri
ergas.

35.Avogadr
o'snumberof6.
022X1023isdef
inedast
henumberof(
1)el
ect
rons,
(2)at
oms,
(3)
Y:oi
ecul
escontai
nedin1moleofanygas.

36.TherateofCVDi
s(1)pr
opor
ti
onal
to,
(2)i
nver
sel
ypr
opor
ti
onal
to,
(3)i
ndependentof
temperat
ure.

37.TherateofCVDi s(
1)pr
opor
ti
onal
to,
(2)i
nver
sel
ypr
opor
ti
onal
to,
(3)i
ndependentoft
he
carr
iergaspressur
e.

38.TherateofCVDis(l
)pr
opor
ti
onal
to,
(2)i
nver
sel
ypr
opor
ti
onal
to,
(3)i
ndependentoft
he
carr
iergasvel
oci
ty.

39.Therat
eofCVDis(1)propor
tionalt
o,(2)i
nversel
ypr
opor
ti
onalt
o,(3)i
ndependentof
thi
cknessoft
heboundar
ylayerbetweenthecarri
ergasandt
hesubstr
atesur
face.

40.PECVDi spopul
arbecausei
tof
fer
s(1)goodadhesi
on,
(2)asi
mpl
epr
ocess,
(3)r
elat
ivel
y
l
owoper at
ingtemperat
ure.

41.Theprocessengi
neerwoul
dchoose(1)APCVD,
(2)LPCVD,
(3)PECVDf
orl
owerpr
ocess
temper
ature.

42.Theprocessengi
neerwoul
dchoose(
1)APCVD,
(2)LPCVD,
(3)PECVDf
orhi
gherr
ateof
deposi
ti
on.

43.Sput
ter
ingi
spr
ocessedat(1)l
ow,
(2)el
evat
ed,
(3)hi
ght
emper
atur
e.

44.Sput
ter
ingisnormal
l
yusedf
ordeposi
ti
ng(
1)or
gani
c,(
2)i
nor
gani
c,(
3)met
alf
il
msov
er
si
li
consubstr
ates.

45.Epi
taxyi
nvolv
esthegrowthof(1)si
ngl
e-cry
stal
fil
ms,
_(2)or
gani
cfi
l
ms,
(3)met
all
i
cfi
l
ms
overasubst
rate.madeofthesamemateri
al.

46.CMOSi
sa(
1)CVD,
(2)PVD,
(3)epi
taxi
alt
hin.
.:
fi
lm gr
owt
hpr
ocess.

47.Acommoncar
ri
ergasusedi
nepi
taxi
aldeposi
ti
oni
s(1)oxy
gen,
(2)ni
tr
ogen,
(3)hy
drogen.

48.Wetet
chingi
nvol
vestheuseof(1)di
sti
l
ledwat
er,
(2)mi
ner
alwat
er,
(3)chemi
cal
sol
uti
ons
todi
ssol
vethemater
ial
sint
endedforremoval
.

49.Dryetchi
nginvol
vest
heuseof(
1)dr
yai
r,(
2)dr
ytoxi
cgas,
(3)pl
asmat
oremov
ethe
subst
rat
emat er
ial
.

50.Ingener
al,
wetet
chi
ngi
s(1)10,
(2)100,
(3)1000t
imesf
ast
eri
nremov
ingmat
eri
alsf
rom
si
l
iconsubst
ratet
handr
yet
chi
ng.
Ans:

1.(
3);2.(3)
;3.(2);4.(2);5.(2);6.(
3);7.(
2);8.(1);9.(
1);10.(2);11.(2);12.(1);13.(1);14.(2);
15.(2);
16.(1);17.(2);18.(1);19.(1)
;20.(2);21.(3);
22.(2);23.(2);24.(1);25.(3);26.(3);27.
(3)
;28.(1);29.(3)
; 30.(2);31.(3);
32.(2)
;33.( 1)
;34.(2)
; 35.(3)
; 36.(1)
; 37.(2)
; 38.(2)
; 39.(2)
;
40.(3);
41.(3);42.(2);43.(1);44.(3)
;45.(1);46.(3);
47.(3);48.(3);49.(3);50.(1)
Topi
c9:

1.Micr
omnanufactur
ingi
s(1)sy
nony
moust
o,(
2)ant
ony
moust
o,(
3)unr
elat
edt
o
micr
ofabr
icat
ion.

2.I
ngener
al,
ther
ear
e(1)t
wo,
(2)t
hree,
(5)f
ourdi
sti
nctmi
cromanuf
act
uri
ngt
echni
ques.

3.Bul
kmanuf actur
ingi
nvol
vespr
imari
ly(
1)addi
ng.(
2)subt
ract
ing.(
3)bot
haddi
ngand
subt
ract
ingport
ionsofmateri
alf
rom t
hesubst
rat
e.

4.Thepri
nci
palmi
crofabr
icat
ionpr
ocessusedi
nbul
kmanuf
act
uri
ngi
s(1)et
chi
ng,
(2)
deposi
ti
on,(
3)di
ff
usion.

5.I
sotr
opicetchi
ngi
shardl
ydesir
ableinmicr
omanufactur
ingbecause(
1)t
heetchi
ngr
atei
s
t
oolow,(2)t
hecosti
stoohigh,
(3)iti
shardtocont
rolthedir
ect
ionofet
chi
ng.

6.Themostfav
oredor
ient
ati
onf
ormi
cromachi
ningi
sthe(
1)<100>,
(2)<110>,
(3)<111>
ori
ent
ati
on.

7.Theleast
-usedor
ient
ati
onf
ormi
cromachi
ningi
sthe(
1)<100>,
(2)<110>,
(3)
<111>
or
ient
ati
on.

8.Arat
ioof400:1et
chi
ngratewasobservedforsi
l
iconbet
weent
he(
1)<100>and<111>,
(2)
<110>and<111>,(
3)<10>and<100>ori
entat
ions.

9.The(111)pl
anei
nter
sect
sthe(
100)pl
anei
nasi
l
iconcr
yst
alwi
thanangl
eof(
1)50.
74°
,(2)
54.74°
,(3)57.
47.

10.Anisotr
opicet
chi
ngi
s(1)f
ast
er,
(2)sl
ower
,(3)aboutt
hesamespeedi
ncompar
isont
o
i
sotropicetchi
ng.

11.Si
l
icondi
oxi
dewi
thKOHet
chanti
s(1)100,
(2)1000,
(3)20,
000t
imessl
owert
hansi
l
icon.

12.Si
l
icondi
oxi
dewi
thEDPet
chanti
s(1)100,
(2)1000,
(3)20,
000t
imessl
owert
hansi
l
icon.

13.Si
l
iconnit
ridei
s(1)ast
ronger
,(2)aweaker
,(3)aboutt
hesame,
inet
chi
ngr
esi
stanceasi
n
si
li
conoxide.

14.Thehighert
heselect
ivi
tyr
ati
oofamateri
al,
(1)t
hebet
ter
,(2)t
hewor
se,
(3)nei
therbet
ter
norworseisthernat
eri
alasanetchi
ngmask.

15.Dopedsil
i
conhasr esi
stancet
oet
chi
ng(
1)st
rongert
han,
(2)weakert
han,
(3)aboutt
he
sameasthatofundopedsil
icon.
16.Excessi
vedopi
ngofsi
l
iconi
ntr
oduces(
1)resi
dua!st
resses,
(2)r
esi
dual
str
ains,
(3)
fr
actureofatomi
cbondsi
nasil
i
consubstr
ate.

17.Wetet
chi
ngcanbestoppedattheboundar
iesof(
1)p-
ndopedsi
l
icon,
(2)
p
si
li
con/
sil
i
con,(
3)nsi
l
icon/si
li
con.

18.Thereare(
1)one,
(2)t
wo,
(3)t
hreedr
yet
chi
ngt
echni
quesav
ail
abl
efor
microel
ectr
oni
cs.

19.I
sot
ropi
cet
chi
ngi
s(1)2.(
2)5,
(3)10t
imesf
ast
ert
hanani
sot
ropi
cet
chi
ng

20.Whensel
ecti
ngmater
ialsf
ormasksi
ndeepetchingprocess,
onewoul
dse
mater
ial
swi
th(1)hi
gh,
(2)low,(
3)medi
um sel
ect
ivi
tyrat
io.

21.DRIEst
andsf
or(
1)dr
yet
chi
ng.(
2)dr
yreact
ivei
onet
chi
ng.(
3)deepr
eact
ivei
on
etchi
ng.

22.DRI
Eist
hebestmeansof(
1)dr
yet
chi
ng,
(2)f
astet
chi
ng,
(3)deepet
chi
ng.

23.PSGst
andsf
or(
1)pol
ysi
l
icongl
ass,
(2)phosphosi
l
icat
egl
ass,
(3)phosphor
us
si
li
congl
ass.

24.PSGisacommonmat
eri
alf
or(
1)act
ivesubst
rat
es,
(2)passi
vesubst
rat
es,
(3)
sacr
if
ici
all
ayer
s.

25.Sacri
fici
allayersi
nsurf
acemicr
omachi
ningareusedto(
1)strengthenthe
microst
ructure,(2)cr
eat
enecessar
ygeomet
ricvoi
dsinthemicr
ostructur
e,(3)bepar
t
ofthestructure.

26.PSGisamorepopularsacr
if
ici
all
ayermater
ial
thansil
icondi
oxi
debecausei
tcan
beetched(
1)morerapi
dly,(
2)moreslowly
,(3)morecheaplyi
nHFetchant
.

27.Themostpopul
arst
ructur
almat
eri
ali
nsur
facemi
cromachi
ningi
s(1)PSG,
(2)
pol
ysil
i
con,
(3)si
li
condi
oxide.

28.I
nsurfacemicromachi
ning,
theet
chrateforsacri
fi
cial
layersmustbe( 1)
much
sl
ower,
(2)aboutthesame,(3)muchfast
erthanetchrat
esf orotherl
ayer
s.

29.St
ict
ionoccur
sin(1)bul
kmi
cromanuf
act
uri
ng,
(2)sur
facemi
cromachi
ning,
(3)
l
asermicrof
abri
cat
ion.

30.Sti
cti
oninfi
nishedmi
crostr
uct
uresmadebysurf
acemicr
omachi
ningi
sar esultof
(1)l
ayersofdi
ssimil
armat
erial
s,(
2)thi
nfi
l
ms,(3)at
omicf
orcesbet
weenlay
er s.
31.Thegeometri
caspectr
ati
oinMEMSstructur
esi
sdef
inedasther
ati
oofdi
mensi
ons
i
n( 1)dept
htosurf
ace,(
2)sur
facet
odept
h, (
3)widt
htol
ength.

32.TheLI
GAprocesspr
oducesMEMSwit
hmat eri
als(
1)l
i
mit
edt
osi
l
icon,
(2)l
i
mit
edt
o
cerami
cs,
(3)v
irt
uall
ynoli
mit
ati
ononmat
eri
als.

33.Synchr
otr
onx-ray
sareusedinphotol
it
hographyintheLI
GApr ocessbecause(1)
theyaremoreeff
ecti
vewit
hthephotor
esist,(
2)theyareacheapersourceofl
ight
,(3)
theycanpenet
rat
edeepintothephot
oresistmateri
al.

34.Thephotoresi
stmater
ial
scommonl yusedi
ntheLIGAprocessare(1)any
photor
esistmater
ial
s,(
2)posit
ivephot
oresi
stmat
eri
als,
(3)negat
ivephotor
esist
materi
als.

35,Oneofthepri
ncipaladvant
agesoftheLI
GApr ocessisi
tsabi
li
tyt
oproduce(
1)
micr
ost
ruct
ureswi
thhi ghaspectr
ati
o,(
2)microst
ructur
eswithl
owcost,
(3)
micr
ost
ruct
ureswit
hpr eci
sedimensi
ons.

36.A-r
ayl
it
hographyi
naLI
GApr
ocesspr
oduces(
1)t
heout
li
ne,
(2)t
heact
ual
geomet
ry,
(3)t
hedupl
icat
eofaMEMScomponent
.

37.Thex-rayl
it
hogr
aphyphot
oresi
stspr
ovi
de(
1)t
heout
li
ne,
(2)t
heact
ual
geomet
ry,
(3)
thedupl
icateofaMEMScomponent .

38.Anelect
ri
callyconducti
vebaseplatemustbeusedi
naLI
GApr ocessbecauseOT
theneedfor(1)signal
transduct
ion,
(2)el
ect
ropl
ati
ngofmet
als,
(3)requi
redel
ectr
ic
heati
ngofthemol d.

39.Micromoldsforinject
ionmoldingofMEMSar eproducedfrom (
1)thex-rav
l
ithogr
aphyphotoresist,(
2)metalsthatareelect
ropl
atedtothephotor
esistoutl
ine,
(3)
theremovalofthebasepl atei
nthepr ocess.

40.Theopt
imal
choi
ceofphot
oresi
sti
naLI
GApr
ocessi
s(1)POM,
(2)PMI
.(3)PMMA

41.Thephot
oresi
stt
hati
smostsensi
ti
vet
ox-
radi
ati
oni
s(1)POM,
(2)PAS,
(3)PMMA.

42.SLI
GAisanimpr
ovementoft heLIGAprocesswitht
heprov
isi
onof(1)sl
ici
ngt
he
basepl
atef
rom t
hefi
nishedproduct,
(2)asacri
fi
cial
lay
erf
orreadysepar
ati
onoft
he
basepl
atef
rom t
heproduct,
(3)acleanproduct.

43.Thel
eastexpensi
vemi cr
omanufact
uringtechni
quei
s(1)bul
kmanuf
act
uri
ng,
(2)
surf
acemicr
omachining,
(3)theLI
GApr ocess.
44.Themostf
lexi
blemicr
omanuf
actur
ingtechni
quei
s(1)bul
kmi
cromanuf
act
uri
ng,
(2)
surf
acemi
cromachini
ng,(
3)t
heLIGAprocess.

45.Themostcost
lymicr
omanuf
actur
ingtechni
quei
s(1)bul
kmi
cromanuf
act
uri
ng,
(2)
surf
acemi
cromachini
ng,(
3)t
heLIGAprocess.

Ans:

1.(1);2.(2);3.(2);4.(
1);
5.(3);6.(2);
7.(3);
8.(1);9.(2);
10.(2);
11.(2);
12.(2);
13.(1);
14.(1)
; 15.(2);16.(1);
17.(1)
;18.(2);19.(3)
;20.(1);21.(3)
;22.(3)
;23.(2)
;24.(3)
;25.
(2)
;26.( 1)
;27.( 2)
;28.(3)
;29.(2);30.(3)
;31.(1)
;32.( 3)
;33.(3)
;34.(2)
;35.(1)
;36.(1)
;
37.(2)
; 38.(2);39.(2);
40.(3)
;41.(2);42.(2)
;43.(1);44.(2)
;45.(3)