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APT-0403 Rev B
March 2, 2006
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Application Note
APT-0403 Rev B
March 2, 2006
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Application Note
APT-0403 Rev B
March 2, 2006
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Application Note
APT-0403 Rev B
March 2, 2006
Breakdown Voltage thermal resistance rating RθJC and the case temperature
Breakdown voltage has a positive temperature TC as follows:
coefficient, as will be discussed in the Datasheet
Walkthrough section. TJ (max) − TC
PD = = I 2D ⋅R DS(on )@ TJ (max) (1)
R θJC
Short Circuit Capability This equation simply says that the maximum heat that
TJ(max) − TC
Short circuit withstand capability is not typically listed can be dissipated, , equals the maximum
in the datasheet. This is simply because conventional R θJC
power MOSFETs are unmatched for short circuit allowable heat generated by conduction loss,
withstand capability compared to IGBTs or other I 2D ⋅R DS(on) @ TJ (max) , where R DS(on) @ TJ (max) is the on
devices with higher current density. It goes without
saying that MOSFETs and FREDFETs are short circuit resistance at the maximum junction temperature.
capable. Solving for ID:
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Application Note
APT-0403 Rev B
March 2, 2006
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Application Note
APT-0403 Rev B
March 2, 2006
EAR – Repetitive Avalanche Energy voltage when hot than when cold. In fact, when cold,
V(BR)DSS is less than the maximum VDSS rating, which is
A repetitive avalanche rating has become “industry
specified at 25°C. For the example shown in Figure
standard” but is meaningless without information about
8, at -50ºC, V(BR)DSS is about 90% of the 25ºC
the frequency, other losses, and the amount of cooling.
maximum VDSS rating.
Heat dissipation (cooling) often limits the repetitive
avalanche energy. It is also difficult to predict how
much energy is in an avalanche event. What the EAR VGS(th) – Gate Threshold Voltage
rating really says is that the device can withstand This is the gate-source voltage at which drain current
repetitive avalanche without any frequency limitation, begins to flow, or stops flowing when switching off the
provided the device is not overheated, which is true of MOSFET. Test conditions (drain current, drain-source
any avalanche capable device. During design voltage, and junction temperature) are also specified.
qualification, it is good practice to measure the device All MOS gated devices exhibit variation in threshold
or heat sink temperature during operation to see that voltage between devices, which is normal. Therefore,
the MOSFET does not overheat, especially if a range in VGS(th) is specified, with the minimum and
avalanching is possible. maximum representing the edges of the VGS(th)
distribution. As discussed previously under
IAR – Avalanche Current Temperature Effects, VGS(th) has a negative temperature
coefficient, meaning that as the die heats up, the
For some devices, the propensity for current crowding
MOSFET will turn on at a lower gate-source voltage.
in the die during avalanche mandates a limit in
avalanche current IAR. Thus avalanche current is the
“fine print” of avalanche energy specifications; it RDS(on) – On Resistance
reveals the true capability of a device. This is the drain-source resistance at a specified drain
current (usually half the ID current) and gate-source
Static Electrical Characteristics voltage (usually 10 Volts), and at 25°C unless
otherwise specified.
V(BR)DSS – Drain-Source Breakdown
Voltage IDSS – Zero Gate Voltage Drain Current
V(BR)DSS (sometimes called BVDSS) is the drain-source This is the drain-source leakage current at a specified
voltage at which no more than the specified drain drain-source voltage when the gate-source voltage is
current will flow at the specified temperature and with zero. Since leakage current increases with temperature,
zero gate-source voltage. This tracks the actual IDSS is specified both at room temperature and hot.
avalanche breakdown voltage. Leakage power loss is IDSS times drain-source voltage
and is usually negligible.
Dynamic Characteristics
Gate
Source
Cgs n+ n+
Cgd p Cgd
Cds
n-
n+
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Application Note
APT-0403 Rev B
March 2, 2006
Figure 9 shows the locations of power MOSFET The input capacitance must be charged to the threshold
intrinsic capacitances. The values of the capacitances voltage before the device begins to turn on, and
are determined by the structure of the MOSFET, the discharged to the plateau voltage before the device
materials involved, and by the voltages across them. turns off. Therefore, the impedance of the drive
These capacitances are independent of temperature, so circuitry and Ciss have a direct effect on the turn on and
MOSFET switching speed is also insensitive to turn off delays.
temperature (except for a minor effect related to the
threshold voltage changing with temperature). Coss – Output Capacitance
This is the output capacitance measured between the
Capacitances Cgs and Cgd, vary with the voltage across
drain and source terminals with the gate shorted to the
them because they are affected by depletion layers
source for AC voltages. Coss is made up of the drain to
within the device [4]. However, Cgs has only a small
source capacitance Cds in parallel with the gate to drain
voltage change across it compared to Cgd and
capacitance Cgd, or
consequently a small capacitance change. The change
in Cgd with drain-to-gate voltage can be as much as a
factor of 100 or more. Coss = Cds + Cgd
Figure 10 shows the intrinsic capacitances from a For soft switching applications, Coss is important
circuit perspective. The gate-to-drain and gate-to- because it can affect the resonance of the circuit.
source capacitances impact the susceptibility of
unwanted dv/dt induced turn-on in bridge circuits. Crss – Reverse Transfer Capacitance
This is the reverse transfer capacitance measured
D
Gate
between the drain and gate terminals with the source
supply Cgd connected to ground. The reverse transfer capacitance
voltage is equal to the gate to drain capacitance.
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Application Note
APT-0403 Rev B
March 2, 2006
capacitances decrease over a range of increasing drain- td(off), – Turn-off Delay Time
source voltage, especially the output and reverse Turn-off delay time is the time from when the gate-
transfer capacitances. source voltage drops below 90% of the gate drive
voltage to when the drain current drops below 90% of
the specified current. This gives an indication of the
Qg delay before current begins to transition in the load.
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Application Note
APT-0403 Rev B
March 2, 2006
(DUT) and the clamp diode are regulated by a Eon – Turn-on Switching Energy with Diode
temperature forcing system. This is the clamped inductive turn-on energy that
includes a commutating diode reverse recovery current
The following test conditions are specified in the in the DUT turn-on switching loss. Note that
Dynamic Characteristics table: VDD in Figure 13, test FREDFETs in a hard switched bridge circuit where the
current, gate drive voltage, gate resistance, and body diode is hard commutated off have about 5 times
junction temperature. Note that the gate resistance may higher turn-on energy than if a discrete fast recovery
include the resistance of the gate driver IC. Since diode is used, like in the test circuit of Figure 13.
switching times and energies vary with temperature,
mostly because of the diode in the test circuit, data is Turn-on switching energy is the integral of the product
provided both at room temperature and hot, with the of drain current and drain-source voltage over the
diode heated along with the DUT. Graphs are also interval from when the drain current rises past 5% or
provided showing the relationships between switching 10% of the test current to when the voltage falls below
times and energies to drain current and gate resistance. 5% of the test voltage. The 5% to 10% of current rise
Delay time and current rise and fall time definitions are to 5% of voltage fall definitions for the integration
the same as for resistive switching. interval in the waveforms in Figure 14 accommodate
the resolution of the instrumentation while providing a
reliable means of duplicating the measurement that
does not compromise accuracy.
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Application Note
APT-0403 Rev B
March 2, 2006
case based on this power loss. Note that tests at APT The transient thermal impedance “family of curves”
revealed the plastic temperature to be the same as the that is published in the datasheet is simply a
metal portion of the case for discrete parts. rectangular pulse simulation based on the RC thermal
impedance model. Figure 17 shows an example. You
The maximum RθJC value incorporates margin to can use the ‘family of curves’ to estimate peak
account for normal manufacturing variation. Due to temperature rise for rectangular power pulses, which is
manufacturing process improvements, the industry common in a power supply. However, because the
trend is toward decreasing the margin between the minimum pulse width is 10 µs, the graph is only
maximum RθJC value and the typical value. The relevant for switching frequencies less than 100 kHz.
amount of margin is usually not published. At higher frequency you simply use the thermal
resistance RθJC.
ZθJC – Junction to Case Transient Thermal
Impedance
Transient thermal impedance takes into account the
heat capacity of the device, so it can be used to
estimate instantaneous temperatures resulting from
power loss on a transient basis.
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Application Note
APT-0403 Rev B
March 2, 2006
Data in Figure 18 were also measured with a gate As a practical matter, the losses are high for a single
resistance of 5?æ, and we will use 15?æat turn-on. So device, dominated by far by the turn-on switching loss.
we can use the switching energy versus gate resistance To keep the case at 75°C will probably require a
data shown in Figure 19 to scale again. ceramic insulator (for electrical isolation) between the
case and high capacity heat sink. An advantage of a
MOSFET is that snubbers and/or resonant techniques
can be applied to reduce switching losses without
worrying about voltage or temperature-dependent
switching effects in the MOSFET.
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Application Note
APT-0403 Rev B
March 2, 2006
References
[1] R. Severns, E. Oxner; “Parallel Operation of
Power MOSFETs”, technical article TA 84-5,
Siliconix Inc.
[2] J. Dodge; “Latest Technology PT IGBTs vs.
Power MOSFETs”, application note, Advanced
Power Technology
[3] R. Frey, D. Grafham - APT, T. Mackewicz - TDI-
Dynaload; “New 500V Linear MOSFETs for a
120 kW Active Load”, application note APT0002,
Advanced Power Technology
[4] N. Mohan, T. Undeland, W. Robbins; “Power
Electronics – Converters Applications, and
Design”, text book published by Wiley
[5] K. Dierberger, “Gate Drive Design for Large Die
MOSFETs”, application note APT9302, Advanced
Power Technology
[6] R. McArthur, “Making Use of Gate Charge
Information in MOSFET and IGBT Datasheets”,
application note APT0103, Advanced Power
Technology
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