MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION PIN CONFIGURATION

M63823P, M63823FP and M63823GP are seven-circuit
IN1→ 1 16 →O1
Darlington transistor arrays with clamping diodes. The cir-
cuits are made of NPN transistors. Both the semi-conductor IN2→ 2 15 →O2

integrated circuits perform high-current driving with ex- IN3→ 3 14 →O3

tremely low input-current supply. INPUT IN4→ 4 13 →O4 OUTPUT

Production lineup has been newly expanded with the addi- IN5→ 5 12 →O5
tion of 225mil (GP) package.
IN6→ 6 11 →O6
M63823P and M63823FP have the same pin connection as
IN7→ 7 10 →O7
M54523P and M54523FP. (Compatible with M54523P and
GND 8 9 →COM COMMON
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and 16P4(P)
M54523FP. 16P2N-A(FP)
Package type 16P2S-A(GP)
FEATURES
● Three package configurations (P, FP and GP)
● Pin connection Compatible with M54523P and M54523FP
CIRCUIT DIAGRAM
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max) = 500mA) COM
● With clamping diodes OUTPUT
● PMOS Compatible input 2.7k
● Wide operating temperature range (Ta = –40 to +85°C) INPUT

APPLICATION
7.2k
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter- 3k
GND
faces
The seven circuits share the COM and GND
FUNCTION The diode, indicated with the dotted line, is parasitic, and
cannot be used.
The M63823P, M63823FP and M63823GP each have seven Unit : Ω
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kΩ between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, en-
abling space-saving design.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol Parameter Conditions Ratings Unit

VCEO Collector-emitter voltage Output, H –0.5 ~ +50 V
IC Collector current Current per circuit output, L 500 mA
VI Input voltage –0.5 ~ +30 V
IF Clamping diode forward current 500 mA
VR Clamping diode reverse voltage 50 V
Pd Power dissipation Ta = 25°C, when mounted on board 1.47(P)/1.00(FP)/0.80(GP) W
Topr Operating temperature –40 ~ +85 °C
Tstg Storage temperature –55 ~ +125 °C

Jan. 2000
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Limits
Symbol Parameter Unit
min typ max
VO Output voltage 0 — 50 V
Collector current Duty Cycle
(Current per 1 cir- P : no more than 8% 0 — 400
FP : no more than 5%
cuit when 7 circuits GP : no more than 4%
IC are coming on si- mA
Duty Cycle
multaneously) P : no more than 30% 0 — 200
FP : no more than 20%
GP : no more than 15%
IC ≤ 400mA 3.85 — 25
VIH “H” input voltage V
IC ≤ 200mA 3.4 — 25
VIL “L” input voltage 0 — 0.6 V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Limits
Symbol Parameter Test conditions Unit
min typ max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA 50 — — V
II = 500µA, IC = 350mA — 1.2 1.6
VCE(sat) Collector-emitter saturation voltage II = 350µA, IC = 200mA — 1.0 1.3 V
II = 250µA, IC = 100mA — 0.9 1.1
II Input current VI = 3.85V — 0.9 1.4 mA
VF Clamping diode forward volltage IF = 350mA — 1.4 2.0 V
IR Clamping diode reverse current VR = 50V — — 100 µA
h FE DC amplification factor VCE = 4V, I C = 350mA 1000 2000 — —

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)

Limits
Symbol Parameter Test conditions Unit
min typ max
ton Turn-on time — 15 — ns
CL = 15pF (note 1)
toff Turn-off time — 350 — ns

NOTE 1 TEST CIRCUIT TIMING DIAGRAM

INPUT
INPUT Vo
50% 50%

Measured device RL
OPEN
PG OUTPUT
OUTPUT 50% 50%
50Ω CL

ton toff

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP = 3.85VP-P
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes

Jan. 2000
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

TYPICAL CHARACTERISTICS

Output Saturation Voltage

Thermal Derating Factor Characteristics
Collector Current Characteristics
2.0 500
II = 500µA
Power dissipation Pd(max) (W)

400

Collector current Ic (mA)

1.5 M63823P

300
M63823FP
1.0

0.744 200
M63823GP

0.5 0.520 Ta = 25°C

0.418 100
Ta = 85°C Ta = –40°C

0 0
0 25 50 75 85 100 0 0.5 1.0 1.5 2.0

Ambient temperature Ta (°C) Output saturation voltage VCE(sat) (V)

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics

(M63823P) (M63823P)
500 1 500

400 400
Collector current Ic (mA)

Collector current Ic (mA)

1
2
300 300
3 2
200 4
5 200
3
6 4
•The collector current values
represent the current per circuit.
7 •The collector current values 5
100 •Repeated frequencyy ≥ 10Hz 100 represent the current per circuit. 6
•Repeated frequency ≥ 10Hz 7
•The value the circle represents the •The value the circle represents the
value of the simultaneously-operated circuit. value of the simultaneously-operated circuit.
•Ta = 25°C •Ta = 85°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics

(M63823FP) (M63823FP)
500 500

400 1 400
Collector current Ic (mA)

Collector current Ic (mA)

300 300 1
2

200 3 200
4 2
•The collector current values 5 3
represent the current per circuit. 6 •The collector current values 4
100 7 100 5
•Repeated frequency ≥ 10Hz represent the current per circuit.
•The value the circle represents the •Repeated frequency ≥ 10Hz 76
value of the simultaneously-operated circuit. •The value the circle represents the
•Ta = 25°C value of the simultaneously-operated circuit. •Ta = 85°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Jan. 2000
 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

Duty Cycle-Collector Characteristics Duty Cycle-Collector Characteristics

(M63823GP) (M63823GP)
500 500

400
Collector current Ic (mA)

Collector current Ic (mA)

400
1

300 300
1
2
200 200
3 2
•The collector current values 4
5 3
represent the current per circuit. 6 •The collector current values
100 •Repeated frequency ≥ 10Hz
100 4
7 represent the current per circuit. 5
•The value the circle represents the •Repeated frequency ≥ 10Hz 6
value of the simultaneously-operated circuit.
7
•The value the circle represents the
•Ta = 25°C value of the simultaneously-operated circuit. •Ta = 85°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

DC Amplification Factor Grounded Emitter Transfer Characteristics

Collector Current Characteristics
104 500
VCE = 4V
7
5 Ta = 85°C
DC amplification factor hFE

400
Collector current Ic (mA)

2
300
103
Ta = –40°C
7 200
5 Ta= 25°C
Ta = 85°C
3 Ta = 25°C
100
2 Ta = –40°C

102 0
101 2 3 5 7 102 2 3 5 7 103 0 1 2 3 4 5

Collector current IcC (mA) Input voltage VI (V)

Input Characteristics Clamping Diode Characteristics

16 500
Forward bias current IF (mA)

400
12
Input Current II (mA)

Ta = –40°C
300
Ta = 25°C
8
200

4 Ta = 25°C
Ta = 85°C 100
Ta = 85°C Ta = –40°C

0 0
0 5 10 15 20 25 0 0.5 1.0 1.5 2.0

Input voltage VI (V) Forward bias voltage VF (V)

Jan. 2000