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Q3
(b) Misalignment of the terminals of the voltmeter to the sides of the slice makes VH
more than its actual value. There is a non-zero VH even if there is no magnetic field
through the slice.
𝑙
A misalignment of 0.1 mm has a resistance of 2.7×10-5 (use 𝑅 = 𝜌 𝐴), resulting in a
potential drop of about 135 V (use 𝑉 = 𝐼𝑅) across an misalignment of length 0.1
mm. So, VH increases by 135 V to become 1.66 ×10-4 V
Q6
(ii) When the electrons in the slice move in the magnetic field they experience a
magnetic force perpendicular to their direction of motion and direction of the
magnetic field. So electrons accumulate on one side of the slice, leaving the
opposite side positively charge. The separation of charges sets up an electric field
across the sides of the slice, hence to a p.d.
(b) For the same flux density, a larger current and thinner slice will give a large,
hence measurable VH.
Q7
(d) (i) At larger current, drift velocity is higher, so magnetic force on moving electrons
is greater, hence VH increases to produce a stronger electric field so that electric
force is large enough to balance the magnetic force.
(ii) Charge density in semiconductor is much smaller than in metals. Small charge
density gives large VH
2
Q7
(e) VH depends on the sine of the angle between the plane of the probe and the B-
field. VH is maximum when the plane and the B-field are normal to each other and is
minimum (zero) when the plane and the B-field are parallel to each other.
After 180 rotation, the force on the moving electrons is in the opposite direction w.r.t
one side of the slice, resulting in polarity of VH.
(f) Charge density unchanged as number of free electrons does not increase with
increasing temperature.
𝐵𝐼
VH decreases from 𝑉𝐻 = 𝑛𝑞𝑡 , 𝑛 same and 𝐼 decreases OR smaller magnetic force on
each charge carrier due to lower drift velocities. So a weaker electric field is needed
to counteract force due to magnetic field.