ECE1008 – ELECTRONICS HARDWARE TROUBLESHOOTING

TASK-6

Name: Kartik Vashist

Reg. No.: 18BEC0748
Slot: L39-L40
Faculty: Prof. Raja Sellappan
TASK:
a. Design MOSFET transistor based logic gates: AND, OR, NAND, NOR, XOR.
b. MOSFET I-V Characterization

Design MOSFET transistor based logic gates: AND, OR, NAND, NOR, XOR.

THEORY:
Logic gates are used to carry out different kinds of mathematical and logical operations from simple
comparison to addition of binary values. Hence these logic gates are made using transistors which can
perform the different operations of a gate. The most common type of transistors used for this purpose is
the MOSFET type, particularly in the CMOS configuration (combination of a PMOS and an NMOS
transistor).
When the input is high,
1. The output terminal acts as an open terminal and so the value at the output terminal will be the
same as that of the input terminal
2. The reverse of this happens and the output terminal acts as short circuit.
When the input is low,
1. The output terminal acts as a short terminal or,
2. The output terminal acts as an open terminal
This switching action is used to alter the output terminal voltage and is used to get the desired working
of a logic gate.

SIMULATION:
1. NAND gate-

Truth Table-
A B Vout
0 0 1
0 1 1
1 0 1
1 1 0
Circuit Diagram:

Output:

For A=0V, B=0V

For A=5V, B=5V

2. AND gate-

Truth Table-
A B Vout
0 0 0
0 1 0
1 0 0
1 1 1
Circuit Diagram:

Output:

For A=5V, B=5V

For A=0V, B=0V

For A=5V, B=0V

3. NOR gate-

Truth Table-
A B Vout
0 0 1
0 1 0
1 0 0
1 1 0

Circuit Diagram:
Output:

For A=0V, B=0V

For A=5V, B=5V

For A=5V, B=0V

4. OR gate-

Truth Table-
A B Vout
0 0 0
0 1 1
1 0 1
1 1 1
Circuit Diagram:

Output:

For A=5V, B=5V

For A=0V, B=5V

For A=0V, B=0V

5. XOR gate-

Truth Table-
A B Vout
0 0 0
0 1 1
1 0 1
1 1 0

Circuit Diagram:
Output:

For A=0V, B=0V

For A=5V, B=5V

For A=0V, B=5V

RESULT:
We can thus say that the circuits that have been constructed online behave as their corresponding logic
gates which have been proven by comparing the different output graph values with the truth tables of
the logic gates.

MOSFET I-V Characterization

THEORY:

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as
the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect
transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage
of the covered gate determines the electrical conductivity of the device; this ability to change
conductivity with the amount of applied voltage can be used for amplifying or switching electronic
signals.
A key advantage of a MOSFET is that it requires almost no input current to control the load current,
when compared with bipolar junction transistors (BJTs). In an enhancement mode MOSFET, voltage
applied to the gate terminal can increase the conductivity from the "normally off" state. In a depletion
mode MOSFET, voltage applied at the gate can reduce the conductivity from the "normally on" state.
MOSFETs are also capable of high scalability, with increasing miniaturization, and can be easily scaled
down to smaller dimensions. They also have faster switching speed (ideal for digital signals), much
smaller size, consume significantly less power, and allow much higher density (ideal for large-scale
integration), compared to BJTs. MOSFETs are also cheaper and have relatively simple processing steps,
resulting in high manufacturing yield.
SIMULATION:

Circuit Diagram:

Output:

RESULT:

The I-V characteristics of MOSFET have been observed with the help of LTSpice.