Gray, Hurst, Lewis, and Meyer SOLUTIONS MANUAL TO ACCOMPANY Analysis and Design of ANALOG INTEGRATED CIRCUITS Prepared by Srikanth Vaidianathan | Haoyue Wang Kuo-Chiang Hsieh Kuang-Lu Lee Robert Chu FOURTH EDITIONSolutions Manual to Accompany Analysis and Design of Analog Integrated Circuits Fourth Edition Paul R. Gray, University of California, Berkeley Paul J, Hurst, University of California, Davis Stephen H. Lewis, University of California, Davis Robert G. Meyer, University of California, Berkeley Prepared by Srikanth Vaidianathan, University of California, Davis Haoyue Wang, University of California, Davis Kuo-Chiang Hsieh, University of California, Berkeley Kuang-Lu Lee, University of California, Berkeley Robert Chu, University of California, Berkeley John Wiley & Sons, Inc New York » Chichester - Brisbane - Toronto - SingaporeCHAPTER 1 bb For 0-3V ¢orward bias, « t= tential (@) From (i+!) the built-in poten YotVe = 0-45 V is NAN: Yo = Vr in “— W)= 0:93 2 26.4m = 26 tn 8x 10% 10'7_ 45) mv w ee eel 2 ~ 0-074 [0.45 ~ 0.021. 4m 225% 10% SS ee 4x Oo From (1-14) the depletion-layer depth Enaayy HP x10 x 0-26 : 0-93 in the p-type region is, Pee te : 2-319 x10* Y, w, =| 2x 104 x10% 5-75 2 16x 107'% 8x 105 140.08) a = 0.93 14m From (1:20), the 3ero bias In the n-type region using (115) gunction capacitance is , y K Wye [2x 100 x10 5.75 a Ge 4 [ setae aul b6x1O x 10!7x 13-5 2(NtND) I TH, = 0.074 4m S adtafi x10"% San ona") From (1-7) the maximum field is 2 (8x10'%4 Io! -@N, Emax” ~ FSA = 6x 10% Bx 10x: = 0-87 pF 1604 x10" Using (1-20) with Vp=-SV we = 1-4 x 10% Vem obtain, Ge G lo (b) For 3ero volts bias, 47 code 77 Yo + Vez Yo = 0-75 at With Vp= 0.3 G+ Go» 0174 pF oe = 1-4 x 10F x 0-3 0-93 = 4017 x 10% Yom1 The break down voltage can be From (1-81), calculated from (1-24) using BV.eg7 48:9 = av '200 5 oF Thus, Le e 7 Me = 104 x1" fe 4x08 = [2x16x10 ex 010% “] ee nee 3-2 x10 1.04 x 10(8 x10'% 10) route Veg? 203 = 65. J. Vee 102V Pieg™ 283 = 65.5 ¥400 ae Junction curvature causes (1-24) to become Jena) = #5 [ 22-NaNo Ve * E(Ng+Np) LE Nq>> Nps | Emax | * 3% 107 Yer and Vg= I50V, then this equation gives axio> 225 24Npve é€ ' 9x 107% Og x 1 3.2 x10 x 150 X2.25 = 8:7 x10"4 atoms/, 43 15 Ls The plane breakdown voltage is BV = ECNatNp) eo ae 24, NANp = b04 x1 x 9x10 48-6V FLX % 6x O'Sxz = 7:69 mA Vy 26mV Vv ywyetle=e_! = BOkKR Gm — 10° (7-6 9m) ip Pe = 100 CS iska Sm 76am oy = Te Om = US ps) (769m) = HIS FF Y= Spy = 5 (100)(130k) = 65 M2 Cje * 2Ge0~ 40 FF lo #F = 3.94 FF (+3. O55 “ = 20fF _ 6.95 ¢F rane oss : where «, BY, 7 I20V, n= 4 cb on if 2 8 2604A, , 5 4 30uA 3+ * 2 104A : Lah ———— s 10 Volks1-4 2 For problem (|-9), = Te = ImA « 36-5 mA oT” Ze a BUia)= 285M 61.86 wet «1 = kan gw 623gF Ie 19m 163 (38-5) a 200} Be = 100 2 26ka ra gm 38-5m Cp = Tem = ('5Ps)( 38-5m) = S77 FF x, 18 fy=776H2. = 9:84.6H2 = SBte = 5(100) (26k)= 3M Gje % 2Ljen > 40 FF oe “ = ~ BE ese mg th He L846 iat fa f ae -_2fF oan er Fe 72 Os Cn = Cyt Ge = 617 FF 10. 1 At high frequencies, (gw) = BI = am JO TRG Fen) For problem (1-8) BCjwy= 262 MA. 4846, 776 gw |59 fF jo ritell ie @ AtIg= ima, c,* 1 2 | ant, 21 6o0x10® = 0-265 ns t i At Tes 10mA, = anf, 2m x10? = 0.159 ns *, 265 = Cp 4 26x (Cut Ce) BQ = Tp+26x(Cu4 Ge) *) 106 = 23-4 (Cut Ce) Cut Ge = 4°53 PF Tp = 147 ps Since Cyt Ou15 pF, je = 4°4 PF = 5x100 ¥500kn = 250M2 <9, 53 CLe Cp9m™ O147x 10% 3.8% 10 = 0.56 pF Cp = 0156+ 44 > 5:0 PF b ima jerima Snr b> 38 may t= WO kgs DEKN 38 he SOKA, Tye25Mn Cy = 56 pF Cn 256 +446 IPF Cys O31 pF, 6, > 0-62 pF y, = 1002, % 2 1000 I.25mA Qm = 190 may Tr = 100 = 530 190 Re lokn, yeSMn cy = 26 pF Cy = 28644Q = 32-4 PF Cy = 0-31 PF, Cee 0-82 PF ¥, = 100K, Y= 1002 ® f= 4 BM Gy 4eje teu = i i Bn tp + (ee teu) Fe Cp O1ATNS , Ce tly = 47 PF + (MHz) Te Ink 10MA OHA IMA 1OmA1-6 Points 8] and 8, will be at the same potential and can be connected. Also Cj and Cj, | and Ej. Thus, the composite device becomes as shown with a collector bias current I, . 38.5 5 Te v/a = 1 2, hi et x lO°= gel mz "fe 2m 365401 ° oe Q = Spl, = 365x107 05 x17 x ¢.3 = 19-3 pe % (be) 42g , Ws © 0 ° =— Ft IE of V, . I we te PET Ne since vi,re and % are assumed hag +05xL mA pervolk of Ug Constant, the values of these toe resistors are halved in the Ge ae OE 7 ka = 200kn composite device as compared c . ae to the original device at the same total current. Since cy and C., are independent of bias current, the values of these capacitors are doubled in the composite device. Since Tito and ty are proportional to Yr the values of these resistors are unchanged oe ctor | connect two transistors in parallel, each with @ collector bias current in the composite device as compared ‘0 the original device With the Same total current. Since $m '$ properhonal to Ie, its value is Unchanged in the composite device4-7 Finally, Cn = ¢je+ Cp where cje is assumed constant and ¢, is proporhonal to Ip. Thus, in the composite device, Ge is doubled and ¢, is unchanged AS a consequence, Cx in the composite is larger than in the original device at the same total current, but the increase in Cp is less than two times es Since current gain is 9 at 50 MHz, £, = 9x50 = 450 MHz at Ip=1mA Uo tp= te = 0354 15 anf, From (1-130), Cre tpt jet en am 0-354 = 0-25 + (Cet oy) x26 "bye thy = 4 PF Given Cy 70-6 pF, Ge 3-4 PF At I,= 2m y= Ce 9m = 025% xt = 19-2 pF IZ "Cm? GetCn = 344192 > 22.6 pF am = = 77 my, 13 Be Ma = 40 xn = 20k m2 hr = Be = 13002 am1-8 5 Le @ XW = 97x 10-970 xu Me So in triode region, Tp = 970 [2(Veg-9-6) Mog "os ] HA In active region (saturation) , pe 970 ( VggO16) (140-024 Vp) aA (b) From (1-140), v= Veot ¥ (2+ veg —/2¢e) From (1141), T= 2GENA © [2xtenlo™, Lod. n15 45x10! bd 1 2 3 Yos(V) ox 43K 107 = 0.094 JV From (1-142), <4 Cop = E0t © BOXG BSH St ga GF tox £0 x108 um = 4:3 XIE em When Veg=0, W=0-6V When Vege OSV, Y= 0-63V When Vege lv ,y-065V 7 . 2 Yee(v)Lb Vy = 06 +0.094 (J 16-08) = 0.646 V KW (Veeey PC 14 AY, HW (Yes-Y)(14 Ns) gis (1- 0-646)" (14 002.4 (2)) 2 = 127 4A 117 rom (1-180), feces y From (1:208), m?[2K W Ip = [2 (194) 10(127) am2[2®"H Zo (194) 10 (127) eee ae = 702 May 2M Cat egategy 27 37-7 HIT% From (l- 199), From (1-179) Ww .| AY, Bmp 2 ¥ [* Te = 0.094) 194 (10) (127) KHL (Yeg¥e) (14 MMo8) lad, +¥en) ZlO6+1) $194 12 (Meg 0:6) (1+% Vos) Bey Here, I+ ae 1+ 0-024 (3)*1-072 From (194), = = _! ATy 0-024 (274) This term is usually ignored 2 328 KR but is included here to demons- From (201), cop > fsbo. 204F sia gp -trate its use. Ignoring the T+ Ves +s term would cause a Taherror \ s or Gr (| Sm (MA) FCG Vop= Yost Voge 2t!= 3V Vea CY | Were OD] Seema] A (Ete) oO OF 063 135 From (1202), Caps Sdbo - _204F ; ( 5 ae = eer] og es a7 |o9 1+ og. 43 Yo oT 20 14 2-91 123 Ga=24F 1 From (1-191), #) 9 28-7 ¢F Cas; * z WLCon © 2 (10) (1) 643 Cas = <5; + Gye, = 28-742 = 90-7 FF1-10 1.18 ie In linear region , from (1-215) Tp > Motor A [2(VesMMMogm Woe ] 21+ Vos zt) From (1-220), os (act) at[ ate-4) 4] In active region, from (1.223) (b) &Leh5V Yee) | Yes CY) | Yoscacrh¥) bo 040 0.3574. 20 140 1.0397 3.0 240 1.5741 We(V. No wel sat Vel-sat ost | Eon) | Zo ua) o o oO o2 | 6g (02-7 155-2 123.9 vel -sat. Ips Mncox w VE act Tp (uA) 2G OUeCaet) 0 Ete o2 | soay | 4451 Vee (V} Vy (V! Vp Vv} Og 931.2 135-2 rl Nes) [ Yosr% O | Moston 1g | igo2 | 1048-5 10 0:40 0395 ar. 20 140 1.34, Yeg=3V | Vpelv) | Ne velssat] vel sal 3.0 es 2.23 Mes 3V | Yost) | So cyay | Fo(ua) (el SAE. a eC 2 No vel. sat ‘ Od 892-4 787-4 wetv | Vostv) | Seditay | to Cua) eee eases |e Oo oO ° ba 4617-2 2388.2 2 6g | nae 24 |5587.2 | 2403-4 Og 155-2 152 No vel-sat. ver sar, Yesr2v | Vos) | zpcua)l To(uA) ° ° i ° 02 5044 | 497-6 OF O32 907-0 14 igor. | 1742-41 - novelsai| vel sak Yes" 9V} Nos) | x5 Cay} Zp (4A) 0 0 ° 0 0 ° on 892-4 | 860.7 ot He ae Om 1707-2 | 1662.9 a lou oa 4617-2 | 4223-0 24 5567.2] 4839.7