Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BU508D

DESCRIPTION
・With TO-3PN package
・High voltage
・Built-in damper diode

APPLICATIONS
・For use in large screen colour
deflection circuits.

PINNING

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
3 Emitter Fig.1 simplified outline (TO-3PN) and symbol

半 导体
Absolute maximum ratings (Ta=25℃)

O R
固 电 UC T
D
SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter

IC ON 1500 V

S E M
GE
VCEO Collector-emitter voltage Open base 700 V

H A N
INC
VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 5 A

ICM Collector current (Pulse) 8 A

IB Base current 2.5 A

PC Collector power dissipation TC=25℃ 125 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -65-150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-c Thermal resistance from junction to case 1.0 ℃/W

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BU508D

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V

VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2.0A 1.0 V

VBEsat Base-emitter saturation voltage IC=4.5A; IB=2.0A 1.5 V

hFE DC current gain IC=1A ; VCE=5V 8

ICES Collector cut-off current VCE=1500V; VBE=0 1.0 mA

IEBO Emitter cut-off current VEB=5V; IC=0 300 mA

导体
VF Diode forward voltage IF=4.0A 2.0 V

电 半 T O R
固 D UC
fT Transition frequency IC=0.1A ; VCE=5V 4 MHz

IC ON
E M
Cob Collector capacitance IE=0;VCB=10V;f=1MHz 125 pF

GE S
ts

A N
Storage time

H
7 μs

INC
IC=4.5A ; IB=1.4A
LB=10μH
tf Fall time 1.0 μs

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors BU508D

PACKAGE OUTLINE

半 导体 O R
固 电 UC T
ON D
E M IC
GE S
H A N
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)