2SC4466

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4466 Unit Symbol Conditions 2SC4466 Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 120 V ICBO VCB=120V 10max 9.6 2.0±0.1

VCEO 80 V IEBO VEB=6V 10max µA

VEBO 6 V(BR)CEO IC=50mA 80min V

19.9±0.3
V

4.0
a
IC 6 A hFE VCE=4V, IC=2A 50min∗ ø3.2±0.1
b
IB 3 A VCE(sat) IC=2A, IB=0.2A 1.5max V
PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 110typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 1.4

B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
6 3 6
Collector-Emitter Saturation Voltage V C E (s at) (V )

A A A A
0m m 80m
0m 1 00
20 15

Collector Current I C (A)

Collector Current I C (A)

50 mA
4 2 4

30mA

mp)

)
p)

Temp
e Te
e Tem
2 20mA 1 2

Cas

(Case
(Cas
˚C (
I B =10mA

–30˚C
25˚C
125
I C =6A
4A
2A
0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
300 200 5
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 25˚C
Typ
100
–30˚C
1
50

50
0.5

30 20 0.3
0.02 0.1 0.5 1 56 0.02 0.1 0.5 1 56 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 60

10 1m
M aximum Power Dissipa ti on P C (W)

10 s
10 ms
Cu t-off Fre quen cy f T (M H Z )

30 5 0m
W

s
Collector Curr ent I C ( A)

ith

DC 40
In

Typ
fin
ite
he

20
at
si

1
nk

20
0.5
10 Without Heatsink
Natural Cooling

Without Heatsink
3.5
0 0.1
–0.02 –0.1 –1 –6 5 10 50 100 0
0 25 50 75 100 125 150
Emitter C urrent I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

106
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