PD - 93944C

AUTOMOTIVE MOSFET
IRF7103Q
Typical Applications
● Anti-lock Braking Systems (ABS) HEXFET® Power MOSFET
● Electronic Fuel Injection
● Power Doors, Windows & Seats VDSS Ω)
RDS(on) max (mΩ) ID
Benefits 50V 130@VGS = 10V 3.0A
● Advanced Process Technology
200@VGS = 4.5V 1.5A
● Dual N-Channel MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Repetitive Avalanche Allowed up to Tjmax
● Automotive [Q101] Qualified
1 8
S1 D1
Description G1
2 7
D1
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize S2
3 6
D2
the lastest processing techniques to achieve extremely low 4 5
G2 D2
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and T o p V ie w SO-8
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 3.0
ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 2.5 A
IDM Pulsed Drain Current Q 25
PD @TC = 25°C Power DissipationS 2.4 W
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche EnergyT 22 mJ
IAR Avalanche CurrentQ See Fig.16c, 16d, 19, 20 A
EAR Repetitive Avalanche EnergyV mJ
dv/dt Peak Diode Recovery dv/dt U 12 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient S ––– 50 °C/W
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 130 VGS = 10V, ID = 3.0A R
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– ––– 200 VGS = 4.5V, ID = 1.5A R
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 3.4 ––– ––– S VDS = 15V, ID = 3.0A
––– ––– 2.0 VDS = 40V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 25 VDS = 40V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– 10 15 ID = 2.0A
Qgs Gate-to-Source Charge ––– 1.2 ––– nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 ––– VGS = 10V
td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 25V R
tr Rise Time ––– 1.7 ––– ID = 1.0A
ns
td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω
tf Fall Time ––– 2.3 ––– RD = 25Ω
Ciss Input Capacitance ––– 255 ––– VGS = 0V
Coss Output Capacitance ––– 69 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 29 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 3.0
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 12
(Body Diode) Q p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0VR
trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.5A
Qrr Reverse Recovery Charge ––– 45 67 nC di/dt = 100A/µs R

Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature.
R Pulse width ≤ 400µs; duty cycle ≤ 2%.
S Surface mounted on 1 in square Cu board
T Starting TJ = 25°C, L = 4.9mH
RG = 25Ω, IAS = 3.0A. (See Figure 12).
U ISD ≤ 2.0A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
V Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.

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 IRF7103Q

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID , Drain-to-Source Current (A)

7.0V
ID , Drain-to-Source Current (A)

7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 10 5.0V
BOTTOM 4.5V BOTTOM 4.5V 4.5V

4.5V
10

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100.00 2.5

ID = 3.0A
R DS(on) , Drain-to-Source On Resistance

T J = 175°C
ID , Drain-to-Source Current (Α )

2.0
(Normalized)

1.5
T J = 25°C
10.00

1.0

0.5
VDS = 25V

1.00
20µs PULSE WIDTH 
V GS = 10V
0.0
3.0 6.0 9.0 12.0 15.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF7103Q

10000

12


VGS = 0V, f = 1 MHZ I D = 2.0A
V DS = 40V
Ciss = Cgs + Cgd, Cds SHORTED V DS = 25V
Crss = Cgd V DS = 10V
Coss = Cds + Cgd 9
C, Capacitance(pF)

1000

VGS, Gate-to-Source Voltage (V)

Ciss 6

100 Coss
3
Crss

10 0
0 3 6 9 12
1 10 100
Q G, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

10 100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)


ID, Drain-to-Source Current (A)

TJ = 175 ° C
10

1 1 100µsec

TJ = 25 ° C
1msec

0.1
Tc = 25°C
Tj = 175°C 10msec

V GS = 0 V
0.01
Single Pulse
0.1
0.4 0.6 0.8 1.0 1.2 0 1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRF7103Q

3.0
RD
VDS

2.4 VGS
D.U.T.
I D , Drain Current (A)

RG
+
-VDD
1.8
VGS
Pulse Width ≤ 1 µs
1.2 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

0.6
VDS
90%
0.0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)

10%
Fig 9. Maximum Drain Current Vs. VGS
Case Temperature td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50
(Z thJA)

0.20
10

0.10
Thermal Response


0.05

0.02 P DM

1 0.01
t1

 SINGLE PULSE
(THERMAL RESPONSE) t2

0.1
 Notes:
1. Duty factor D =
2. Peak T
t1/ t

J = P DM x Z thJA
2
+T A

0.00001 0.0001 0.001 0.01 0.1 1 10

t 1, Rectangular Pulse Duration (sec)

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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 IRF7103Q

2.500
R DS(on) , Drain-to -Source On Resistance ( Ω )

0.15

R DS (on) , Drain-to-Source On Resistance ( Ω)

0.14
2.000

0.13
VGS = 4.5V
1.500
0.12

1.000
0.11 ID = 3.0A

0.10
0.500
VGS = 10V

0.09 0.000
4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 0 5 10 15 20 25 30 35 40
-V GS, Gate -to -Source Voltage (V) ID , Drain Current (A)

Fig 12. Typical On-Resistance Vs. Gate Fig 13. Typical On-Resistance Vs. Drain
Voltage Current

2.0 70
V GS(th) Gate threshold Voltage (V)

60

1.8
50
ID = 250µA
Power (W)

40
1.5
30

20
1.3

10

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 1.00 10.00 100.00 1000.00
TJ , Temperature ( °C ) Time (sec)

Fig 14. Typical Threshold Voltage Vs. Fig 15. Typical Power Vs. Time
Junction Temperature
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 IRF7103Q


60
ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP 1.2A
2.5A
48 BOTTOM 3.0A 1 5V

36 L D R IV E R
VDS

24 RG D .U .T +
V
- DD
IA S A
20V
tp 0 .0 1 Ω
12
Fig 16c. Unclamped Inductive Test Circuit

0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( ° C)

V (B R )D SS
Fig 16a. Maximum Avalanche Energy
tp
Vs. Drain Current

IAS

Fig 16d. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ

12V .2µF
.3µF
VGS
+ QGS QGD
V
D.U.T. - DS

VGS VG
3mA

IG ID
Current Sampling Resistors
Charge
Fig 17. Gate Charge Test Circuit Fig 18. Basic Gate Charge Waveform

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IRF7103Q
1000

Duty Cycle = Single Pulse

100
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

10 assuming ∆ Tj = 25°C due to
avalanche losses

1 0.01

0.05
0.1
0.10

0.01
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

tav (sec)

Fig 19. Typical Avalanche Current Vs.Pulsewidth

25 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:
ID = 3.0A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

20
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
15
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
10 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
5 voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
0
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25 50 75 100 125 150 175
D = Duty cycle in avalanche = t av ·f
Starting T J , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC

Fig 20. Maximum Avalanche Energy ∆T/ [1.3·BV·Zth]
Iav = 2∆
Vs. Temperature EAS (AR) = PD (ave)·tav

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 IRF7103Q
SO-8 Package Details
INCHES MILLIMET ERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BAS IC 1.27 BAS IC
e1 .025 BAS IC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

F OOT PRINT
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.

3X 1.27 [.050]
8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
INTERNAT IONAL F7101 LOT CODE
RECTIFIER
LOGO PART NUMBER

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IRF7103Q
SO-8 Tape and Reel
T E R M IN A L N U M B E R 1

1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )

8 .1 ( .31 8 )
7 .9 ( .31 2 ) F E E D D IR E C T IO N

N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.

33 0.0 0
(1 2 .9 9 2 )
M AX .

1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
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