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1. INTRODUÇÃO.............................................................................................................................. 3
4. MODULADOR DE AMPLITUDE............................................................................................. 10
5. MULTIPLICADORES ANALÓGICOS.................................................................................... 12
1. INTRODUÇÃO
O conteúdo desta apostila consiste das aulas experimentais do curso de Eletrônica IV, ministrado no
Departamento de Eletrônica da Escola de Engenharia. Cada capítulo corresponde a um experimento a ser
montado e estudado em laboratório. Esses experimentos foram, ao longo dos anos, sendo aprimorados
didaticamente, de forma a apresentar ao aluno a constatação experimental dos conceitos básicos, e essenciais,
estudados na disciplina teórica. Também são fornecidos todos os manuais dos componentes usados nos
experimentos, disponibilizando ao aluno todas as informações necessárias à realização dos projetos.
4
ASSUNTO
Projeto de um amplificador de potência, classe AB, com transistores de saída em simetria com-
plementar.
OBJETIVO
Familiarizar o aluno com as condições de operação e características particulares do circuito.
PROJETO
2 - Carga de 8Ω.
Considerações:
πV op
η= onde Vop é a tensão de pico de saída.
4V cc
3 - Explique a função dos seguintes componentes do circuito: R1, R2, D1, D2, D3, D4, C2 e C5.
4 - Considere R1=R2=0.5Ω.
Medidas:
1 - Conservar os valores dos componentes calculados para o circuito da Figura 2.1, exceto o capacitor
C1.
3 - Calcular R6 para se obter um ganho de tensão realimentado de 4. Este ganho é necessário para que
um sinal de entrada com 1V de amplitude produza potência máxima na saída do amplificador. Esta é
uma especificação comum aos amplificadores de potência comerciais.
Medidas:
1 - Monte o circuito da Figura 2.3 (a) utilizando um microfone de eletreto e um resistor R10=10kΩ.
3 - Com a tensão VMic, projete o pré-amplificador da Figura 2.3 (b) de tal forma a se obter uma tensão
máxima Vpré=1V e freqüência de corte inferior menor que 50Hz. Conecte o pré-amplificador ao
amplificador da Fase 2, conforme a Figura 2.4, substitua a carga RL por um alto-falante de 8Ω, fale
ao microfone e relate suas impressões.
3. AMPLIFICADOR SINTONIZADO
OBJETIVO
Estudo de um amplificador sintonizado e sua aplicação como amplificador seletivo, multiplicador de
freqüências e conversor.
ESPECIFICAÇÕES
Projetar um amplificador sintonizado, tomando por base, a Figura 3.1, com as seguintes
características:
1 - Vcc = 12V.
( )
2 - Freqüência da portadora ( eci ω c = 400kHz ).
eco (ω c )
3 - Ganho de tensão AV = ≅ 20 .
eci (ω c )
PROCEDIMENTOS
onde:
Cv é uma década capacitiva;
Cp é a capacitância parasita, que inclui a capacitância do osciloscópio, da fiação, residual da década e da
própria bobina;
1
ωo = Î Fazer as medidas de Lx em dois valores, ωo1 e ωo2, em torno de ωc, de
(
L x Cv + C p )
modo que seja anulada a capacitância Cp.
- Medida de Qb.
8
Z( ω o )
Vo = Vi
R s + Z( ω o )
5 - Responda:
Medidas:
- o ganho máximo em ωc;
- a curva de resposta, assinalando os pontos de meia potência;
- a seletividade;
- os sinais de saída de acordo com as entradas especificadas no item 5;
- explique os resultados;
- faça as observações que julgue necessárias;
7 - No circuito já montado, aplique à base outro gerador de sinais, conforme a Figura 3.2.
4. MODULADOR DE AMPLITUDE
OBJETIVO
Estudo de um circuito Modulador de Amplitude (AM).
ESPECIFICAÇÕES
Projetar um circuito Modulador de Amplitude, tomando por base, o circuito da Figura 4.1, de forma
a atender as especificações abaixo:
PROCEDIMENTOS
1 - Meça a indutância L da bobina, sua relação de espiras e seu fator de qualidade Qb.
4 - Mostre que para se obter simetria nos ciclos positivo e negativo do sinal modulado Vo(t), é
V
necessário que a resistência equivalente no coletor de Q2 seja R eq = cc . Calcule Ro para se obter
2 Icq
Req.
5 - Calcule C4 de tal forma que: na freqüência da portadora o capacitor seja um curto-circuito; nas fre-
qüências moduladoras o capacitor seja um circuito aberto.
MEDIDAS
2 - Com um sinal de entrada de 1kHz, ajuste sua amplitude para um índice de modulação de 50% e
esboce o sinal de saída Vo(t) para as formas de onda quadrada, senoidal e triangular.
3 - Meça o maior índice de modulação que pode ser obtido sem que haja distorção no sinal de saída.
11
5. MULTIPLICADORES ANALÓGICOS
OBJETIVO
Familiarizar o aluno quanto às técnicas de multiplicação de sinais analógicos variantes no tempo e
sua aplicação como moduladores em amplitude com e sem portadora, detectores síncronos, detectores de
fase, dobradores de freqüência, extratores de raiz quadrada, etc.
INTRODUÇÃO
Durante muito tempo a multiplicação analógica foi conseguida através de várias técnicas como:
- método do quadrado da soma usando dispositivos não lineares que apresentem características
quadráticas, predominantes ou não, como FET’s, diodos ou transistores de junção, seguidos de
filtros passa-faixa.
- método do quadrado da soma balanceada, usando os mesmos dispositivos anteriores, mas em cir-
cuitos onde a portadora é suprimida (mais de 40dB) ou reduzida (mais de 20dB). Em baixas fre-
qüências pode-se simular um dispositivo com características quadráticas com operacionais e redes
de realimentação providas de resistores e diodos em série. Para cada tensão de entrada o ganho
será diferente e aproximação por partes poderá ser quadrática.
A presente prática será sobre os moduladores balanceados de transcondutância variável e com os co-
letores dos diferenciais cruzados, conhecidos como células de Gilbert [1]. Estas células são comuns a vários
integrados como multiplicadores de quatro quadrantes, moduladores, etc.
TRABALHO PREPARATÓRIO
- Modulador AM DSB
- Modulador AM DSB SC
3 - Usando a identidade
1 1
sen( a ) sen( b) = sen( a + b) + sen( a − b)
2 2
sendo a = ω c t + Φ e b = ω c t
idealizar um circuito que possa fornecer uma tensão de saída proporcional ao desvio de fase entre os
sinais a e b, sendo Φ < π 4 , onde sen( Φ) ≅ Φ .
13
PRÁTICA
1 - Montar um circuito modulador em amplitude da Figura 5.1 que possa funcionar como AM DSB e
AM DSB SC numa freqüência de portadora ω c = 2π × 100 × 10 3 rad s e freqüência da moduladora
ω m = 2πf m , fm variando de 100Hz a 3kHz.
3 - Observe no analisador de espectro as formas de onda do item 1, anotando os resultados. Varie o poten-
ciômetro que reduz a portadora, medindo o melhor resultado.
4 - Montar o circuito projetado como detector de fase. Caso necessite de um defasador de π 2 utilize re-
des RC.
Responda:
Referências
[2] Design of Analog Integrated Circuits. P. Gray, M. Meyer. John Wiley, Mp.
14
6. MODULADOR DE FREQÜÊNCIA
OBJETIVO
Estudo de um circuito Modulador de Freqüência (FM).
ESPECIFICAÇÕES
Projetar um circuito Modulador de Freqüência, tomando por base o circuito da Figura 6.1, de forma
a atender as especificações abaixo:
PROCEDIMENTOS
1 - Determine R4 e C4 de forma a atender as especificações de freqüências de corte inferior e superior
para o sinal modulador. Considere a capacitância do diodo varactor em torno de 15pF.
2 - Calcule C1, C2 e L para que o circuito oscile na freqüência de 40MHz. Para isto, reflita todas as ca-
pacitâncias e resistências para o coletor do transistor BF494. A freqüência pode ser determinada pela
fórmula abaixo:
1
f= .
2π LCeq
3 - A bobina deve ser confeccionada com fio rígido esmaltado (fio de enrolar motor), com uma única ca-
mada de espiras e com forma cilíndrica. Para o cálculo do número de espiras e das dimensões da bo-
bina, deve ser usada a fórmula abaixo:
0. 394 r 2 N 2
L=
9 r + 10 h
onde
L - é a indutância em µH.
r - é o raio da bobina em cm.
N - é o número de espiras.
h - é o comprimento da bobina em cm.
MEDIDAS
1 - Sem aplicar o gerador de sinais, varie o potenciômetro P entre o mínimo e o máximo. Faça um
gráfico da freqüência de oscilação pela tensão no ponto A (que é a tensão que polariza o diodo
varactor), e calcule a constante ko do oscilador.
3 - Retire os capacitores C1 e C2, de forma que o circuito pare de oscilar. Meça a atenuação
H ( jω ) = VB ( jω ) V A ( jω ) na freqüência de 30kHz. Com a amplitude anotada no item 4, calcule
2.4 f m
ko = e compare com o valor obtido no item 1.
H ( jω m ) V A max
f i ( t ) = f c + ∆f cos( f m t )
Φ i ( t ) = 2π ∫ f i ( t )dt
∆f
Φ i ( t ) = 2πf c t + sen(2πf m t )
fm
16
7. FONTES CHAVEADAS
OBJETIVO
Projetar e verificar o funcionamento dos conversores BOOST, FLYBACK e BUCK.
PRÁTICA
a) Conversor BOOST
- equações de projeto:
(VCC − VT ) αα 1T
2
- medidas:
1) Simule o circuito.
2) Meça a tensão de saída (ripple).
3) Meça a variação de tensão na saída.
4) Registre a tensão no ponto B.
5) Verifique a corrente de carga e descarga do indutor, observando a tensão no ponto A. V A = VCC − 100 I .
6) Varie α de 0.1 a 0.5, e plote um gráfico de VL em função de α.
7) Compare os resultados práticos com os calculados e os obtidos previamente por simulação. Justifique as
discrepâncias.
17
b) Conversor FLYBACK
- equações de projeto:
1) Simule o circuito.
2) Meça a tensão de saída (ripple).
3) Meça a variação de tensão na saída.
4) Registre a tensão no ponto A.
5) Verifique a corrente de carga e descarga do indutor, observando a tensão no ponto B. V B = 100 I .
6) Varie α de 0.1 a 0.5, e plote um gráfico de VL em função de α.
7) Compare os resultados práticos com os calculados e os obtidos previamente por simulação. Justifique as
discrepâncias.
c) Conversor BUCK
O circuito da Figura 7.4 é um conversor BUCK. Dimensione RL e CL de forma a se obter VL=5V com
α=0.5 e uma atenuação mínima, do filtro LC, de 0.01 na freqüência de chaveamento. A tensão VCC deve ser
ajustada em 10V, e Vp conforme a Figura 7.5. Assuma uma freqüência de chaveamento de 10kHZ. Considere
também a possibilidade α poder variar de um valor mínimo de 0.2 a um máximo de 1.
- equações de projeto:
DATASHEETS
Philips Semiconductors Product specification
FEATURES DESCRIPTION
• Hermetically sealed leaded glass The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar
SOD27 (DO-35) package technology, and encapsulated in hermetically sealed leaded glass SOD27
• High switching speed: max. 4 ns (DO-35) packages.
• General application
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage: k
handbook, halfpage a
max. 75 V
• Repetitive peak forward current: MAM246
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 75 V
VR continuous reverse voltage − 75 V
IF continuous forward current see Fig.2; note 1 − 200 mA
IFRM repetitive peak forward current − 450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t=1s − 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW
Tstg storage temperature −65 +200 °C
Tj junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25 2
Philips Semiconductors Product specification
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25 3
Philips Semiconductors Product specification
GRAPHICAL DATA
MBG451 MBG464
300 600
handbook, halfpage handbook, halfpage
IF IF
(mA) (mA)
200 400
100 200
0 0
0 100 Tamb (oC) 200 0 1 VF (V) 2
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
10−1
1 10 102 103 tp (µs) 104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25 4
Philips Semiconductors Product specification
MGD290 MGD004
103
handbook, halfpage 1.2
IR handbook, halfpage
Cd
(µA)
2 (pF)
10
1.0
(1) (2)
10
0.8
1
0.6
10−1
10−2 0.4
0 100 200 0 10 20
Tj (oC) VR (V)
Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse
temperature. voltage; typical values.
1999 May 25 5
Philips Semiconductors Product specification
90% (1)
VR
MGA881
(1) IR = 1 mA.
I 1 kΩ 450 Ω
I V
90%
R S = 50 Ω OSCILLOSCOPE V fr
D.U.T.
R i = 50 Ω
10%
MGA882 t t
tr tp
input output
signal signal
1999 May 25 6
Philips Semiconductors Product specification
FEATURES PINNING
• Low current (max. 100 mA) PIN DESCRIPTION
• Low voltage (max. 65 V). 1 emitter
2 base
APPLICATIONS 3 collector
• General purpose switching and amplification.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC546 − 80 V
BC547 − 50 V
VCEO collector-emitter voltage open base
BC546 − 65 V
BC547 − 45 V
VEBO emitter-base voltage open collector
BC546 − 6 V
BC547 − 6 V
IC collector current (DC) − 100 mA
ICM peak collector current − 200 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 2
Philips Semiconductors Product specification
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 15 3
Philips Semiconductors Product specification
MBH723
250
handbook, full pagewidth
hFE
200
VCE = 5 V
150
100
50
0
10−2 10−1 1 10 102 IC (mA) 103
BC546A.
MBH724
300
handbook, full pagewidth
hFE VCE = 5 V
200
100
0
10−2 10−1 1 10 102 IC (mA) 103
BC546B; BC547B.
1999 Apr 15 4
Philips Semiconductors Product specification
MBH725
600
handbook, full pagewidth
VCE = 5 V
hFE
400
200
0
10−2 10−1 1 10 102 IC (mA) 103
BC547C.
1999 Apr 15 5
Philips Semiconductors Product specification
FEATURES PINNING
• Low current (max. 100 mA) PIN DESCRIPTION
• Low voltage (max. 65 V). 1 emitter
2 base
APPLICATIONS 3 collector
• General purpose switching and amplification.
1
MAM281
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC556 − −80 V
BC557 − −50 V
VCEO collector-emitter voltage open base
BC556 − −65 V
BC557 − −45 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) − −100 mA
ICM peak collector current − −200 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 15 2
Philips Semiconductors Product specification
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 15 3
Philips Semiconductors Product specification
MBH726
300
handbook, full pagewidth
hFE
200
VCE = −5 V
100
0
−10−1 −1 −10 −102 IC (mA) −103
BC556A.
MBH727
400
handbook, full pagewidth
hFE
VCE = −5 V
300
200
100
0
−10−2 −10−1 −1 −10 −102 IC (mA) −103
BC556B; BC557B.
1999 Apr 15 4
Philips Semiconductors Product specification
MBH728
600
handbook, full pagewidth
hFE
500
VCE = −5 V
400
300
200
100
0
−10−2 −10−1 −1 −10 −102 IC (mA) −103
BC557C.
1999 Apr 15 5
Philips Semiconductors Product specification
FEATURES PINNING
• Low current (max. 30 mA) PIN DESCRIPTION
• Low voltage (max. 20 V). 1 base
2 emitter
APPLICATIONS 3 collector
• HF applications in radio and television receivers
• FM tuners
• Low noise AM mixer-oscillators handbook, halfpage1 3
2
• IF amplifiers in AM/FM receivers. 3
1
DESCRIPTION 2
MAM258
1997 Jul 08 2
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 30 V
VCEO collector-emitter voltage open base − 20 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC) − 30 mA
ICM peak collector current − 30 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
1997 Jul 08 3
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997
E 3
● Customer-Specified Selections Available
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 4.17 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
PRODUCT INFORMATION
2
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
100 1·0
10 0·1
1 0·01
0·001 0·01 0·1 1·0 0·1 1·0 10 100 1000
IC - Collector Current - A IB - Base Current - mA
Figure 1. Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AF
1·0
VCE = 4 V
TC = 25°C
VBE - Base-Emitter Voltage - V
0·9
0·8
0·7
0·6
0·5
0·01 0·1 1·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AC
100
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
IC - Collector Current - A
1·0
0·1
TIP29
TIP29A
TIP29B
TIP29C
0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 4.17 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
PRODUCT INFORMATION
2
TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
100 -1·0
10 -0·1
1 -0·01
-0·001 -0·01 -0·1 -1·0 -0·1 -1·0 -10 -100 -1000
IC - Collector Current - A IB - Base Current - mA
Figure 1. Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS632AF
-1·0
VCE = -4 V
TC = 25°C
VBE - Base-Emitter Voltage - V
-0·9
-0·8
-0·7
-0·6
-0·5
-0·01 -0·1 -1·0
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3
TIP30, TIP30A,TIP30B, TIP30C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS632AB
-100
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
-10
IC - Collector Current - A
-1·0
-0·1
TIP30
TIP30A
TIP30B
TIP30C
-0·01
-1·0 -10 -100 -1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
TL071, TL071A, TL071B, TL072
TL072A, TL072B, TL074, TL074A, TL074B
LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS080D – SEPTEMBER 1978 – REVISED AUGUST 1996
description
The JFET-input operational amplifiers in the TL07_ series are designed as low-noise versions of the TL08_
series amplifiers with low input bias and offset currents and fast slew rate. The low harmonic distortion and low
noise make the TL07_ series ideally suited for high-fidelity and audio preamplifier applications. Each amplifier
features JFET inputs (for high input impedance) coupled with bipolar output stages integrated on a single
monolithic chip.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
AVAILABLE OPTIONS
PACKAGE
VIOmax SMALL CHIP CERAMIC CERAMIC PLASTIC PLASTIC TSSOP FLAT
TA
AT 25°C OUTLINE CARRIER DIP DIP DIP DIP PACKAGE PACKAGE
(D)† (FK) (J) (JG) (N) (P) (PW) (W)
10 mV TL071CD TL071CP TL071CPWLE
6 mV TL071ACD — — — — TL071ACP — —
3 mV TL071BCD TL071BCP —
10 mV TL072CD TL072CP TL072CPWLE
0°C to
6 mV TL072ACD — — — — TL072ACP — —
70°C
3 mV TL072BCD TL072BCP —
10 mV TL074CD TL074CN TL074CPWLE
6 mV TL074ACD — — — TL074ACN — — —
3 mV TL074BCD TL074BCN —
TL071ID — TL071IP
– 40°C to
6 mV TL072ID — — — — TL072IP — —
85°C
TL074ID TL074IN —
6 mV TL071MFK — TL071MJG — — —
– 55°C to
6 mV — TL072MFK — TL072MJG — TL072MP — —
125 C
125°C
9 mV TL074MFK TL074MJ — TL074MN — TL074MW
† The D package is available taped and reeled. Add the suffix R to the device type (e.g., TL071CDR). The PW package is only available left-ended
taped and reeled (e.g., TL072CPWLE).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright 1996, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
VCC +
1OUT
1OUT
4OUT
1IN –
4IN –
NC
NC
NC
NC
NC
NC
NC
NC
3 2 1 20 19 3 2 1 20 19
NC 4 18 NC 1IN+ 4 18 4IN+
3 2 1 20 19 1IN – 5 17 2OUT NC 5 17 NC
NC 4 18 NC NC 6 16 NC VCC+ 6 16 VCC –
IN – 5 17 VCC + 1IN + 7 15 2IN – NC 7 15 NC
NC 6 16 NC NC 8 14 NC 2IN+ 8 14 3IN+
IN + 7 15 OUT 9 10 11 12 13 9 10 11 12 13
NC 8 14 NC
VCC –
2IN–
3IN–
2IN+
NC
NC
NC
2OUT
NC
3OUT
9 10 11 12 13
VCC –
OFFSET N2
NC
NC
NC
NC – No internal connection
symbols
TL071
TL072 (each amplifier)
OFFSET N1 TL074 (each amplifier)
IN + + IN + +
OUT OUT
IN – – IN – –
OFFSET N2
VCC +
IN +
IN – 64 Ω
128 Ω
OUT
64 Ω
C1
18 pF
1080 Ω
ÎÎÎ
1080 Ω
ÁÁÁÁÁ ÁÁÁ
VCC –
ÁÁÁÁÁ OFFSET
ÁÁÁ OFFSET
ÁÁÁÁÁ ÁÁÁ
NULL NULL
(N1) (N2)
TL071 Only
All component values shown are nominal.
COMPONENT COUNT†
COMPONENT
TL071 TL072 TL074
TYPE
Resistors 11 22 44
Transistors 14 28 56
JFET 2 4 6
Diodes 1 2 4
Capacitors 1 2 4
epi-FET 1 2 4
† Includes bias and trim circuitry
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VCC + (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Supply voltage, VCC – (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 18 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V
Input voltage, VI (see Notes 1 and 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15 V
Duration of output short circuit (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: J, JG, or W package . . . . . . . . . . . . 300°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, N, P, or PW package . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC – .
2. Differential voltages are at IN+ with respect to IN –.
3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.
4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the
dissipation rating is not exceeded.
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
25°C 3 10 3 6 2 3 3 6
VIO Input offset voltage VO = 0
0, RS = 50 Ω mV
Full range 13 7.5 5 8
Temperature
αVIO coefficient of input VO = 0, RS = 50 Ω Full range 18 18 18 18 µV/°C
offset voltage
25°C 5 100 5 100 5 100 5 100 pA
IIO Input offset current VO = 0
Full range 10 2 2 2 nA
25°C 65 200 65 200 65 200 65 200 pA
IIB Input bias current§ VO = 0
Full range 7 7 7 20 nA
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
–12
12 –12
12 –12
12 –12
12
Common-mode
Common mode
VICR 25°C ±11 to ±11 to ±11 to ±11 to V
in ut voltage range
input
15 15 15 15
10 kΩ
–
VO
1 kΩ –
VI + VI
VO
CL = 100 pF RL = 2 kΩ +
RL CL = 100 pF
– TL071
IN –
OUT
+ N2
IN +
N1
100 kΩ
1.5 kΩ
VCC –
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
IIB Input bias current vs Free-air temperature 4
vs Frequency 5, 6, 7
vs Free-air temperature 8
VOM Maximum output voltage
vs Load resistance 9
vs Supply voltage 10
vs Free-air temperature 11
AVD Large signal differential voltage amplification
Large-signal
vs Frequency 12
Phase shift vs Frequency 12
Normalized unity-gain bandwidth vs Free-air temperature 13
Normalized phase shift vs Free-air temperature 13
CMRR Common-mode rejection ratio vs Free-air temperature 14
vs Supply
y voltage
g 15
ICC Supply current
vs Free-air temperature 16
PD Total power dissipation vs Free-air temperature 17
Normalized slew rate vs Free-air temperature 18
Vn Equivalent input noise voltage vs Frequency 19
THD Total harmonic distortion vs Frequency 20
Large-signal pulse response vs Time 21
VO Output voltage vs Elapsed time 22
TYPICAL CHARACTERISTICS†
ÎÎÎÎÎ
IB Input Bias Current – nA
10
ÎÎÎÎÎ
± 10 VCC ± = ± 10 V
1 ± 7.5
±5 VCC ± = ± 5 V
0.1
IIIB–
ÁÁÁ
ÁÁÁ
± 2.5
0.01 VOM 0
– 75 – 50 – 25 0 25 50 75 100 125 100 1k 10 k 100 k 1M 10 M
TA – Free-Air Temperature – °C f – Frequency – Hz
Figure 4 Figure 5
ÎÎÎÎÎ ÎÎÎÎ
RL = 2 kΩ VCC ± = ± 15 V
VOM – Maximum Peak Output Voltage – V
ÎÎÎÎÎ ÎÎÎÎ
TA = 25°C RL = 2 kΩ
± 12.5 VCC ± = ± 15 V ± 12.5
TA = 25°C
See Figure 2 See Figure 2
± 10 ± 10
ÎÎÎÎÎ
ÎÎÎÎÎ
TA = – 55°C
VCC ± = ± 10 V
± 7.5 ± 7.5
TA = 125°C
±5 ±5
ÁÁ VCC ± = ± 5 V
ÁÁÁ
ÁÁ ± 2.5
ÁÁÁ ± 2.5
VOM
VOM
ÁÁ 0
100 1k 10 k 100 k 1M 10 M
ÁÁÁ 0
10 k 40 k 100 k 400 k 1 M 4M 10 M
f – Frequency – Hz f – Frequency – Hz
Figure 6 Figure 7
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
ÎÎÎÎ
VOM – Maximum Peak Output Voltage – V
ÎÎÎÎ
See Figure 2
RL = 2 kΩ
± 10 ± 10
± 7.5 ± 7.5
±5 ±5
ÁÁ ± 2.5
ÁÁ ± 2.5
ÁÁ ÁÁ
VOM
VCC ± = ± 15 V VOM
See Figure 2
0 0
– 75 – 50 – 25 0 25 50 75 100 125 0.1 0.2 0.4 0.7 1 2 4 7 10
TA – Free-Air Temperature – °C RL – Load Resistance – kΩ
Figure 8 Figure 9
LARGE-SIGNAL
MAXIMUM PEAK OUTPUT VOLTAGE DIFFERENTIAL VOLTAGE AMPLIFICATION
vs vs
SUPPLY VOLTAGE FREE-AIR TEMPERATURE
± 15 1000
RL = 10 kΩ
VOM – Maximum Peak Output Voltage – V
TA = 25°C 400
± 12.5
VD – Large-Signal Differential
Voltage Amplification – V/mV
200
± 10 100
40
± 7.5
20
±5 10
ÁÁ
AVD
ÁÁ
4 VCC ± = ± 15 V
A
± 2.5
VOM
VO = ± 10 V
ÁÁ
2 RL = 2 kΩ
0 1
0 2 4 6 8 10 12 14 16 – 75 – 50 – 25 0 25 50 75 100 125
|VCC ±| – Supply Voltage – V TA – Free-Air Temperature – °C
Figure 10 Figure 11
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
106
VCC± = ± 5 V to ± 15 V
RL = 2 kΩ
VD – Large-Signal Differential 105 TA = 25°C
Voltage Amplification
104 0°
Phase Shift
Differential
Voltage
Amplification
103 45°
102 90°
AVD
Phase Shift
A
101 135°
1 180°
1 10 100 1k 10 k 100 k 1M 10 M
f – Frequency – Hz
Figure 12
Unity-Gain Bandwidth
Normalized Unity-Gain Bandwidth
1.2 1.02
Normalized Phase Shift
1.1 1.01
Phase Shift
1 1
0.9 0.99
VCC ± = ± 15 V
0.8 0.98
RL = 2 kΩ
f = B1 for Phase Shift
0.7 0.97
– 75 – 50 – 25 0 25 50 75 100 125
TA – Free-Air Temperature – °C
Figure 13
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
TA = 25°C
1.4
87
1.2
86 1
0.8
85
0.6
ÁÁ 0.4
ÁÁ
84
I CC 0.2
83 0
– 75 – 50 – 25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16
TA – Free-Air Temperature – °C |VCC ±| – Supply Voltage – V
Figure 14 Figure 15
No Load No Load
1.6 200
1.4 175
TL074
1.2 150
1 125
ÎÎÎÎ
ÎÎÎÎ
0.8 100
TL072
ÁÁÁ
0.6 75
ÁÁÁ
TL071
PD
0.4 50
ÁÁÁ
I CC
0.2 25
0 0
– 75 – 50 – 25 0 25 50 75 100 125 – 75 – 50 – 25 0 25 50 75 100 125
TA – Free-Air Temperature – °C TA – Free-Air Temperature – °C
Figure 16 Figure 17
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS
ÁÁÁ
EQUIVALENT INPUT NOISE VOLTAGE
vs vs
ÁÁÁ
FREE-AIR TEMPERATURE FREQUENCY
ÁÁÁ
1.15 50
nV/ Hz
VCC ± = ± 15 V
ÁÁÁ
AVD = 10
RL = 2 kΩ RS = 20 Ω
1.10
Normalized Slew Rate – V/µ s
CL = 100 pF 40 TA = 25°C
1.05
30
20
0.95
10
0.90
Vn
V
0.85 0
– 75 – 50 – 25 0 25 50 75 100 125 10 40 100 400 1 k 4 k 10 k 40 k 100 k
TA – Free-Air Temperature – °C f – Frequency – Hz
Figure 18 Figure 19
AVD = 1 RL = 2 kΩ
THD – Total Harmonic Distortion – %
0.4
VI(RMS) = 6 V 4 CL = 100 pF
TA = 25°C TA = 25°C
Output
0.1 2
0.04
0
0.01
ÁÁ –2
ÎÎÎ
0.004 ÁÁ
ÁÁ –4
ÎÎÎ Input
0.001
100 400 1k 4 k 10 k 40 k 100 k
ÁÁ –6
0 0.5 1 1.5 2 2.5 3 3.5
f – Frequency – Hz t – Time – µs
Figure 20 Figure 21
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE
vs
ELAPSED TIME
28
24
Overshoot
O – Output Voltage – mV
20
90%
16
12
ÁÁÁ
8
ÁÁÁ
VO
4
V
10% VCC ± = ± 15 V
0 RL = 2 kΩ
tr
TA = 25°C
–4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
t – Elapsed Time – µs
Figure 22
BALANCED
MODULATORS/DEMODULATORS
These devices were designed for use where the output voltage is a
product of an input voltage (signal) and a switching function (carrier). Typical SEMICONDUCTOR
applications include suppressed carrier and amplitude modulation, TECHNICAL DATA
synchronous detection, FM detection, phase detection, and chopper
applications. See Motorola Application Note AN531 for additional design
information.
• Excellent Carrier Suppression –65 dB typ @ 0.5 MHz D SUFFIX
Excellent Carrier Suppression –50 dB typ @ 10 MHz PLASTIC PACKAGE
CASE 751A
• Adjustable Gain and Signal Handling 14 (SO–14)
• Balanced Inputs and Outputs 1
• High Common Mode Rejection –85 dB typical
P SUFFIX
This device contains 8 active transistors. PLASTIC PACKAGE 14
CASE 646
1
PIN CONNECTIONS
Operating
20 Device Temperature Range Package
Figure 2. Suppressed
Carrier Spectrum MC1496D SO–14
TA = 0°C to +70°C
MC1496P Plastic DIP
40 MC1496BP TA = –40°C to +125°C Plastic DIP
60
499 kHz 500 kHz 501 kHz
6.0
Figure 3. Amplitude
Modulation Output 4.0
Waveform
2.0
IC = 500 kHz 0
IS = 1.0 kHz 499 kHz 500 kHz 501 kHz
ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = –8.0 Vdc, I5 = 1.0 mAdc, RL = 3.9 kΩ, Re = 1.0 kΩ, TA = Tlow to Thigh,
all input and output characteristics are single–ended, unless otherwise noted.)
Characteristic Fig. Note Symbol Min Typ Max Unit
Carrier Feedthrough 5 1 VCFT µVrms
VC = 60 mVrms sine wave and fC = 1.0 kHz – 40 –
offset adjusted to zero fC = 10 MHz – 140 –
VC = 300 mVpp square wave: mVrms
offset adjusted to zero fC = 1.0 kHz – 0.04 0.4
offset not adjusted fC = 1.0 kHz – 20 200
Carrier Suppression 5 2 VCS dB
fS = 10 kHz, 300 mVrms
fC = 500 kHz, 60 mVrms sine wave 40 65 –
fC = 10 MHz, 60 mVrms sine wave – 50 – k
Transadmittance Bandwidth (Magnitude) (RL = 50 Ω) 8 8 BW3dB MHz
Carrier Input Port, VC = 60 mVrms sine wave – 300 –
fS = 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS = 300 mVrms sine wave – 80 –
|VC| = 0.5 Vdc
Signal Gain (VS = 100 mVrms, f = 1.0 kHz; | VC|= 0.5 Vdc) 10 3 AVS 2.5 3.5 – V/V
Single–Ended Input Impedance, Signal Port, f = 5.0 MHz 6 –
Parallel Input Resistance rip – 200 – kΩ
Parallel Input Capacitance cip – 2.0 – pF
Single–Ended Output Impedance, f = 10 MHz 6 –
Parallel Output Resistance rop – 40 – kΩ
Parallel Output Capacitance coo – 5.0 – pF
Input Bias Current 7 – µA
I
bS
+ I1 )2 I4 ; I
bC
+ I8 )2 I10 IbS
IbC
–
–
12
12
30
30
Negative Supply
VEE should be dc only. The insertion of an RF choke in
An alternate method for low–frequency applications is to
series with VEE can enhance the stability of the internal
insert a 1.0 kΩ resistor in series with the input (Pins 1, 4). In
current sources.
this case input current drift may cause serious degradation of
carrier suppression.
TEST CIRCUITS
Figure 5. Carrier Rejection and Suppression Figure 6. Input–Output Impedance
VCC
12 Vdc Re = 1.0 k
1.0 k 1.0 k
Re 2 3
RL RL 0.5 V 8
51 C1
1.0 k 3.9 k 3.9 k + – 10
C2 0.1 µF 2 3 + Vo
Carrier 8 1 MC1496 6 Zout
Input 0.1 µF 10 I9 I6 Zin 4 – Vo
VC + Vo 12
1 MC1496 6
VS – Vo 14 5
Modulating 4 12
Signal Input 14 5 6.8 k
10 k 10 k 51 51
50 k I5 6.8 k
I10 –8.0 Vdc
R1 V–
Carrier Null
–8.0 Vdc NOTE: Shielding of input and output leads may be needed
VEE to properly perform these tests.
Re = 1.0 k Re 2.0 k
1.0 k 51 0.1 µF 1.0 k 0.01
2 3 Carrier 2 3 µF
2.0 k 8 50 50
I7 8 I6 Input 0.1 µF
I8 10 10 + Vo
VC
1.0 k 6 1 MC1496 6
I1 1 MC1496 I9 VS
4 – Vo
I4 4 Modulating 12
12
Signal Input 5
14 5 10 k 10 k 51 51 14
I10 50 k 6.8 k
6.8 k
V–
Carrier Null
–8.0 Vdc –8.0 Vdc
VEE VEE
TYPICAL CHARACTERISTICS
Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),
VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25°C, unless otherwise noted.
–rip
Signal Input = 600 mV 100
1.2
50
400 mV
0.8
300 mV 10
200 mV 5.0
0.4
100 mV
0 1.0
0 50 100 150 200 1.0 5.0 10 50 100
VC, CARRIER LEVEL (mVrms) f, FREQUENCY (MHz)
5.0 140 14
rop , PARALLEL OUTPUT RESISTANCE (k Ω)
120 12
4.0
100 10
3.0 rop
80 8.0
40 4.0
1.0
20 2.0
0 0 0
1.0 2.0 5.0 10 20 50 100 0 1.0 10 100
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 15. Sideband and Signal Port Figure 16. Carrier Suppression
Transadmittances versus Frequency versus Temperature
1.0 0
γ 21, TRANSADMITTANCE (mmho)
+ +
I out (Each Sideband) 40
0.4 g21 V out 0
V (Signal)
0.3 in
50
0.2 Signal Port Transadmittance
+ + +
I out 60
0.1 g21 V out 0 |V | 0.5 Vdc
V C
in 70
0
0.1 1.0 10 100 1000 –75 –50 –25 0 25 50 75 100 125 150 175
fC, CARRIER FREQUENCY (MHz) TA, AMBIENT TEMPERATURE
(°C)
RL = 3.9 k
Re = 500 Ω 10
10
CARRIER SIDEBAND (dB)
20
RL = 3.9 k (Standard
0 Re = 1.0 k Test Circuit) RL = 3.9 k 30 2fC
Re = 2.0 k
– 10 40
RL = 500 Ω
|VC| = 0.5 Vdc Re = 1.0 k 50
– 20 fC
A
V
+ Re ) 2re
R
L 60 3fC
– 30 70
0.01 0.1 1.0 10 100 0.05 0.1 0.5 1.0 5.0 10 50
f, FREQUENCY (MHz) fC, CARRIER FREQUENCY (MHz)
10 0
10
CARRIER SIDEBAND (dB)
20
1.0
30
40
fC ± 3fS
50
0.1
60 fC ± 2fS
70
0.01 80
0.05 0.1 0.5 1.0 5.0 10 50 0 200 400 600 800
fC, CARRIER FREQUENCY (MHz) VS, INPUT SIGNAL AMPLITUDE (mVrms)
Figure 21. Suppression of Carrier Harmonic Figure 22. Carrier Suppression versus
Sidebands versus Carrier Frequency Carrier Input Level
SUPPRESSION BELOW EACH FUNDAMENTAL
0 0
20 20
30 30 fC = 10 MHz
2fC ± fS
40 40
50 2fC ± 2fS 50
fC = 500 kHz
60 60
70 70
0.05 0.1 0.5 1.0 5.0 10 50 0 100 200 300 400 500
fC, CARRIER FREQUENCY (MHz) VC, CARRIER INPUT LEVEL (mVrms)
OPERATIONS INFORMATION
The MC1496, a monolithic balanced modulator circuit, is and have an amplitude which is a function of the product of
shown in Figure 23. the input signal amplitudes.
This circuit consists of an upper quad differential amplifier For high–level operation at the carrier input port and linear
driven by a standard differential amplifier with dual current operation at the modulating signal port, the output signal will
sources. The output collectors are cross–coupled so that contain sum and difference frequency components of the
full–wave balanced multiplication of the two input voltages modulating signal frequency and the fundamental and odd
occurs. That is, the output signal is a constant times the harmonics of the carrier frequency. The output amplitude will
product of the two input signals. be a constant times the modulating signal amplitude. Any
Mathematical analysis of linear ac signal multiplication amplitude variations in the carrier signal will not appear in the
indicates that the output spectrum will consist of only the sum output.
and difference of the two input frequencies. Thus, the device The linear signal handling capabilities of a differential
may be used as a balanced modulator, doubly balanced mixer, amplifier are well defined. With no emitter degeneration, the
product detector, frequency doubler, and other applications maximum input voltage for linear operation is approximately
requiring these particular output signal characteristics. 25 mV peak. Since the upper differential amplifier has its
The lower differential amplifier has its emitters connected emitters internally connected, this voltage applies to the
to the package pins so that an external emitter resistance carrier input port for all conditions.
may be used. Also, external load resistors are employed at Since the lower differential amplifier has provisions for an
the device output. external emitter resistance, its linear signal handling range
may be adjusted by the user. The maximum input voltage for
Signal Levels
linear operation may be approximated from the following
The upper quad differential amplifier may be operated expression:
either in a linear or a saturated mode. The lower differential V = (I5) (RE) volts peak.
amplifier is operated in a linear mode for most applications. This expression may be used to compute the minimum
For low–level operation at both input ports, the output value of RE for a given input voltage amplitude.
signal will contain sum and difference frequency components
ǒǓ
R V
L C
Low–level dc
2(R
E
) 2re) KT
q
fM
R
) 2re
High–level dc L fM
R
E
ǒǓ
R V (rms)
L C
Low–level ac
Ǹ
2 2 KT (R
q E
2r e) ) fC ± fM
0.637 R
) 2re
High–level ac L fC ± fM, 3fC ± fM, 5fC ± fM, . . .
R
E
NOTES: 1. Low–level Modulating Signal, VM, assumed in all cases. VC is Carrier Input Voltage.
2. When the output signal contains multiple frequencies, the gain expression given is for the output amplitude of
each of the two desired outputs, fC + fM and fC – fM.
3. All gain expressions are for a single–ended output. For a differential output connection, multiply each
expression by two.
4. RL = Load resistance.
5. RE = Emitter resistance between Pins 2 and 3.
6. re = Transistor dynamic emitter resistance, at 25°C;
re [
26 mV
I5 (mA)
7. K = Boltzmann′s Constant, T = temperature in degrees Kelvin, q = the charge on an electron.
KT
q [26 mV at room temperature
The gain from the modulating signal input port to the All that is required to shift from suppressed carrier to AM
output is the MC1496 gain parameter which is most often of operation is to adjust the carrier null potentiometer for the
interest to the designer. This gain has significance only when proper amount of carrier insertion in the output signal.
the lower differential amplifier is operated in a linear mode, However, the suppressed carrier null circuitry as shown in
but this includes most applications of the device. Figure 27 does not have sufficient adjustment range.
As previously mentioned, the upper quad differential Therefore, the modulator may be modified for AM operation
amplifier may be operated either in a linear or a saturated by changing two resistor values in the null circuit as shown in
mode. Approximate gain expressions have been developed Figure 28.
for the MC1496 for a low–level modulating signal input and
Product Detector
the following carrier input conditions:
The MC1496 makes an excellent SSB product detector
1) Low–level dc (see Figure 29).
2) High–level dc This product detector has a sensitivity of 3.0 microvolts
3) Low–level ac and a dynamic range of 90 dB when operating at an
4) High–level ac intermediate frequency of 9.0 MHz.
These gains are summarized in Figure 25, along with the The detector is broadband for the entire high frequency
frequency components contained in the output signal. range. For operation at very low intermediate frequencies
down to 50 kHz the 0.1 µF capacitors on Pins 8 and 10
APPLICATIONS INFORMATION should be increased to 1.0 µF. Also, the output filter at Pin 12
Double sideband suppressed carrier modulation is the can be tailored to a specific intermediate frequency and audio
basic application of the MC1496. The suggested circuit for amplifier input impedance.
this application is shown on the front page of this data sheet. As in all applications of the MC1496, the emitter resistance
In some applications, it may be necessary to operate the between Pins 2 and 3 may be increased or decreased to
MC1496 with a single dc supply voltage instead of dual adjust circuit gain, sensitivity, and dynamic range.
supplies. Figure 26 shows a balanced modulator designed This circuit may also be used as an AM detector by
for operation with a single 12 Vdc supply. Performance of this introducing carrier signal at the carrier input and an AM signal
circuit is similar to that of the dual supply modulator. at the SSB input.
The carrier signal may be derived from the intermediate
AM Modulator frequency signal or generated locally. The carrier signal may
The circuit shown in Figure 27 may be used as an be introduced with or without modulation, provided its level is
amplitude modulator with a minor modification. sufficiently high to saturate the upper quad differential
TYPICAL APPLICATIONS
Figure 26. Balanced Modulator
(12 Vdc Single Supply) Figure 27. Balanced Modulator–Demodulator
VCC
1.0 k 820 1.3 k 12 Vdc 1.0 k 1.0 k VCC
12 Vdc
RL
0.1 µF 0.1 µF 2 Re 1.0 k 3 3.9 k RL
3.0 k 3.0 k 51
25 µF
+ 2 1.0 k 3 8 3.9 k
51 8 DSB VC 0.1 µF 10 6
+Vo
15 V 0.1 µF
Carrier Input 6 Carrier
10 0.1 µF Output Input 1 MC1496
60 mVrms
1 MC1496 VS 4
–Vo
Modulating – 4 Modulating 12
+ Signal 10 k 10 k 51 51 14 5
12
Signal Input 10 µF 25 µF 14 5 Input 50 k
300 mVrms 15 V 15 V 10 k R1 I5 6.8 k
+ – VEE
Carrier Carrier Null –8.0 Vdc
Null 50 k 10 k 10 k 100 100
0.001
18 pF
µF
0.001 RFC L1
100 µF 0.68 µH 18 nH
2 3 1.0–10 pF 300 MHz
8 6
Output
0.001 µF 10 RL = 50Ω
150 MHz 1 MC1496 1.0–10 pF
Input
4
10 k 12
100
10 k 100 14 5
50 k
6.8 k
L1 = 1 Turn AWG
No. 18 Wire, 7/32″ ID
Balance VEE
–8.0 Vdc
(fC – f S )
(fC + f S )
AMPLITUDE
(2fC + 2f S )
(2fC – 2f S )
(3fC + f S )
(3fC – fS )
(2fC – 2f S )
(2fC + 2f S )
(3fC + 2f S )
(3fC – 2f S )
(fC – 2f S )
(f + 2f )
S
(2fC )
(3f C )
(fC )