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RoHS-compliant Product
Advanced Power N AND P-CHANNEL ENHANCEMENT
S1 S2
Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 8 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=6A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=6A, VGS=0V - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC
2
AP4506GEH
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5A - - 36 mΩ
VGS=-4.5V, ID=-3A - - 48 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 12 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -10 uA
o
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
2
Qg Total Gate Charge ID=-5A - 12.6 20 nC
Qgs Gate-Source Charge VDS=-24V - 2.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6.2 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 8 - ns
tr Rise Time ID=-5A - 16 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns
tf Fall Time RD=3Ω - 41 - ns
Ciss Input Capacitance VGS=0V - 1045 1670 pF
Coss Output Capacitance VDS=-25V - 220 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-5A, VGS=0V - - -1.3 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V - 23 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
3
AP4506GEH
N-Channel
50 50
o
T C = 150 C 10V
o
T C = 25 C 10V
7.0V
7.0V
5.0V
40
5.0V 40
4.5V
ID , Drain Current (A)
30 30
20 20 V G =3.0V
V G =3.0V
10 10
0 0
0 1 2 3 4 5 0 2 4 6
28 1.8
I D =4A I D =6A
T C =25 o C 1.6
V G =10V
26
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
24
1.2
22
1.0
20
0.8
18 0.6
2 4 6 8 10 -50 0 50 100 150
8
Normalized VGS(th) (V)
1.2
T j =150 o C T j =25 o C
6
IS(A)
0.8
0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
4
AP4506GEH
N-Channel
f=1.0MHz
12 1000
C iss
VGS , Gate to Source Voltage (V)
I D =6A
V DS =24V
8
C (pF)
100
C oss
C rss
4
0 10
0 5 10 15 20 1 5 9 13 17 21 25 29
100 1
Duty factor=0.5
Normalized Thermal Response (Rthja)
10 100us
0.2
1ms
10ms
0.1
ID (A)
1 100ms 0.1
0.05
PDM
1s
t
T
0.1 0.02
0.01 0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
4.5V
QGS QGD
10%
VGS
td(on) tr td(off) tf
Charge Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
5
AP4506GEH
P-Channel
50 50
o
T C = 25 o C -10V T C = 150 C -10V
-7.0V -7.0V
40 -5.0V 40
-5.0V
-ID , Drain Current (A)
30 30
20
20
V G = - 3.0V V G = - 3.0V
10 10
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
45 1.6
I D =-3A I D =-5A
T C =25 o C V G =-10V
41 1.4
RDS(ON) (mΩ)
Normalized RDS(ON)
37 1.2
33 1.0
29 0.8
25 0.6
2 4 6 8 10 -50 0 50 100 150
8
Normalized -VGS(th) (V)
6
-IS(A)
0.8
0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150
6
AP4506GEH
P-Channel
12 10000
f=1.0MHz
10
-VGS , Gate to Source Voltage (V)
I D = -5A
V DS = -24V
8 1000 C iss
C (pF)
6
C oss
C rss
4 100
0 10
0 5 10 15 20 25 30 1 5 9 13 17 21 25 29
100 1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
100us
0.2
1ms
10ms
-ID (A)
0.1
1
100ms 0.1
0.05
1s PDM
0.02
t
0.01 T
0.1
DC Single Pulse
Duty factor = t/T
T A =25 o C Peak Tj = PDM x Rthja + T a
Rthja=75℃/W
Single Pulse
0.01 0.01
0.1 1 10 100 0.001 0.01 0.1 1 10 100
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
-4.5V
QGS QGD
10%
VGS
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform