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ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
THERMAL RESISTANCE
Parameter Symbol NDF11N50Z NDP11N50Z Unit
Junction−to−Case (Drain) RqJC 3.4 0.9 °C/W
Junction−to−Ambient Steady State (Note 4) RqJA 50 50
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NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
25 25
VDS = 25 V
VGS = 10 V
20 20
7.0 V
15 15
6.5 V
10 10
TJ = 25°C
6.0 V
TJ = 150°C
5 5
5.5 V TJ = −55°C
5.0 V
0 0
0 5 10 15 20 25 3 4 5 6 7 8 9 10
2.75 1.15
RDS(on), DRAIN−TO−SOURCE RESISTANCE
ID = 4.5 A ID = 1 mA
2.50
VGS = 10 V
2.25 1.10
2.00
(NORMALIZED)
1.75 1.05
1.50
1.25 1.00
1.00
0.75 0.95
0.50
0.25 0.90
−50 −25 0 25 50 75 100 125 150 50 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with Figure 6. BVDSS Variation with Temperature
Temperature
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NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
100 3250
3000 TJ = 25°C
2750 VGS = 0 V
Ciss f = 1 MHz
2500
C, CAPACITANCE (pF)
Coss
IDSS, LEAKAGE (mA)
2250
10
TJ = 150°C 2000
Crss
1750
1500
1250
1 TJ = 125°C 1000
750
500
250
0.1 0
0 50 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current Figure 8. Capacitance Variation
versus Voltage
15 300
14 QT
13
250
12
11 VDS
10 200
9 VGS
8 QGS
QGD 150
7
6
5 100
4 VDS = 250 V
3 ID = 10.5 A 50
2 TJ = 25°C
1
0 0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000 20
VDD = 250 V
ID = 10.5 A 10
IS, SOURCE CURRENT (A)
VGS = 10 V td(off)
100 tr
tf
t, TIME (ns)
td(on) TJ = 150°C
1 25°C
125°C
10
−55°C
1 0.1
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation Figure 11. Diode Forward Voltage versus
versus Gate Resistance Current
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NDF11N50Z, NDP11N50Z
TYPICAL CHARACTERISTICS
100
VGS v 30 V
1 ms 100 ms 10 ms
SINGLE PULSE 10 ms
0.01
0.1 1 10 100 1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF11N50Z
10
1 0.2
R(t) (C/W)
0.1
0.05
0.1 0.02
LEADS
HEATSINK
0.110″ MIN
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NDF11N50Z, NDP11N50Z
ORDERING INFORMATION
Order Number Package Shipping
NDF11N50ZG TO−220FP 50 Units / Rail
(Pb−Free)
NDP11N50ZG TO−220AB 50 Units / Rail
(Pb−Free) (In Development)
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NDF11N50Z, NDP11N50Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−B− C 2. CONTROLLING DIMENSION: INCH
F 3. 221D-01 THRU 221D-02 OBSOLETE, NEW
S STANDARD 221D-03.
Q U INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A A 0.617 0.635 15.67 16.12
B 0.392 0.419 9.96 10.63
1 2 3 C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
H F 0.116 0.129 2.95 3.28
K −Y− G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
G J L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
N R Q 0.122 0.138 3.10 3.50
L R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
D 3 PL U 0.239 0.271 6.06 6.88
TO−220
CASE 221A−09
ISSUE AF NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operat-
ing parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor
the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ-
ated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/
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