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Introduction and Objectives measure the diode current (Vr /R) and the other was
placed across the diode to measure diode voltage.
Since Diodes are one of the fundamental electronic However, because both probes have a common
devices, which has various applications, it is important ground, we could not get a proper I-V curve.
to know their characteristics and how they work. Therefore, we re-designed the circuit as follows by
Therefore, in this lab, we were instructed to measure using a resistor with low resistance (3Ώ) (to avoid
and analyze the static characteristic of diodes. The unnecessary voltage drop).
primary objectives of this lab are:
Figure 1
Figure 3: I-V characteristic of Si Diode
In order to capture the I-V curve of the Diode on
Oscilloscope, we used time varying voltage source Procedure 2: Measuring and Plotting of Diode
( ±5V Sine Wave with frequency of 1kHz) to trace Current Voltage Point by Point
forward and reverse characteristic of the diode. One
oscilloscope probe was placed across the resistor to By using the circuit in figure 1, we measured the diode
Page 1
EGR220 Than & Bhavin Lab #1
(4) 6
5
Is ≈ Ie –V/nVT
4
(5) 3
2
Our calculation shows that the value of Is for 1N914 is 1
2.88±0.003 ×10-7 A, and that of 1N60 is 1.0±0.3 × 10-3 0
A. According the formula (3), in the reverse bias
-5
-2
-9.5
-7.99
-6.5
-3.47
-0.5
0.67
0.78
0.83
0.88
0.91
0.93
0.96
region, the reverse current would be approximated
with negative Is as the exponential term would Voltage (V)
Page 2
EGR220 Than & Bhavin Lab #1
Linear Vs. Exponential I-V Curve (1N60) ID2 = 2.13 mA, in circuit 4(b), we found both ID1
100 and ID2 = 0A because the voltage at the junction
90 is less than VDO and so, no current cannot pass
through the diodes. For 1N60, in circuit 4 (a) we
80
got ID1 = 0A and ID2 = 2.37 mA, in circuit 4(b),
70 we also found both ID1 and ID2 = 0A.
60
Current (mA)
-5
-2
0.4
0.6
-9.5
-6.5
-3.5
-0.5
0.48
0.52
0.55
0.57
0.59