EGR220 Than & Gab Lab #8

Introduction and Objectives varying VCC (from 1V to 10V).

Although BJT (Bipolar Junction Transistor) has lost its Then, we repeated the measurement for IB= 8μA, 6μA,
polarity in IC (Integrated circuit ) design, it is really and 4μA. Then, we plotted the collected data on the
useful in discrete circuit design. Therefore, to graph.
understand their characteristic is really important.[1].
Therefore, in this lab, we were instructed to measure 1.8
and analyze the static characteristic of BJT devices. 1.6
The primary objectives of this lab are: 1.4
1.2
1. To analyze and understand the statics nature of
BJT 1
0.8
Equipments and Components used 0.6
0.4
In this lab, the equipments and components we used
0.2
are:- Resistors: 100KΩ (x1), 1KΩ (x1); Transistors:
2N 2222 (x2), a breadboard, a waveform generator, 0
±20V power supply, a multi-meter, wires and cords. 0 1 2 3 4 5 6 7 8 9 10

Procedures Figure 2 : IC- VCE Curve (VBE = 0.61, 0.62,0.63,0.64 V)

Procedure 1: Analyzing the Static

Characteristic of BJT

VCC
+5V
RC=
IC
1k

R1= RB=100k +
10k IB + VCE
VBB VBE - -
Table 1: IC Vs. VCE (VBE = 0.62V)

Figure 1 Since IB = 6μA and VCE = 6V, IC = 0.98 mA. Therefore

β= IC / IB = 163.33. ro was calculated from the
linearizing the values from I-V curve when VBE =
We connected the circuit in the figure 1, by using the 0.62V).
components for the lab. Then, we measured the base
current IB by adjusting R1 until we got IB = 10 μA. ro ≈ ( ΔIC / ΔVCE)^-1
Then, we measured VBB and VBE, which were 1.64V
and 0.64V respectively. VA = roIC – VCE

Then, we measured IC and VCE point by point by Therefore, r0 =99KΩ and VA = 92V. When we
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EGR220 Than & Gab Lab #8

compared these values. Since in simplified π model,

gm = IC / VBE = 0.00158 = 1.58 mA/V.

Discussion
Since BJT are useful in discrete circuit design, we
analyzed the static characteristic of BJT. We
measured and plotted the I-V curve for collector
current and collector-emitter voltage, while
keeping base-emitter voltage constant. From that
we could derive, early voltage, ro,
transconductance gm. Although π model is simple
to use, there are other models which are better for
analysis such as Ebers-Moll Model.

References
[1] Sedra, Adel S., and Smith. Kenneth C. “Microelectronics
Circuits”. 5th. New York: Oxford University Press, 2004.

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