ANALOG CIRCUITS

DAY-5
1. The potential divider biasing is used in
amplifiers to
(a) limit the input ac signal going to the base
(b) reduce dc base current
(c) reduce the cost of the circuit by limiting
the number of resistors
(d) make the operating point almost
independent of β
Solution : D
2. The base current for a BJT remains constant at 5mA, the collector
current changes from 0.2mA to 0.3 mA and beta was changed from 100 to
110, then calculate the value of Stability factor.
a) 0.01m
b) 1m
c) 100m
d) 25m
Answer: a
Explanation: Since the current in the above case, remains constant,
therefore stability factor is 0.01 as it is defined as the ratio of change in
collector current to change in beta.
S=change in collector current/change in beta=0.1mA/10=0.01m.
6. For a Fixed bias circuit having RC=2.2KΩ, RB=240Ω, VCC=12v and
current amplification factor is 100 and the current flowing through the base
is 20µA, the value if Collector current in saturation is_____________
a) 5.4mA
b) 3mA
c) 1mA
d) 0A

Answer: a
Explanation: Vce = VCC – IC RC
For saturation, Vce = 0, Hence ICsat = VCC/RC = 5.4mA.
6. What is the value of Stability factor for an ideal
transistor?
a) 100
b) 1000
c) infinite
d) 0
Answer: (d)
Explanation: For an ideal transistor, the value of S is 0
which interprets that the transistor is temperature
insensitive.
7 .For a fixed bias circuit having Ic = 0.3mA and
Ib=0.03mA, S is______________
a) 100
b) 0
c) 11
d) 111
Answer: c
Explanation: For fixed bias S=1+beta
Beta=IC/Ib=10
S=1+10=11
8. Improper biasing of the transistor circuit leads to
(a) excessive heat production at collector terminal
(b) distortion in output signal
(c) faulty location of load line
(d) heavy loading of emitter terminal
Solution : B
9. For a fixed bias circuit having RC=2Kohm and
VCC=60V, IB=0.25mA and S=101, find Vce.
a) 12V
b) 10V
c) 5V
d) 2.5V
Answer: b
Explanation: S = 1 + beta, beta=100
100 = IC/IB
Ic = 25mA
Vce = VCC – Ic RC
Vce = 10V.
10. For a Voltage divider bias circuit, having
R1=R2=10KΩ, RC=4.7 KΩ, RE=1 KΩ, What is the value
of collector current at saturation if VCC=10V?
a) 1A
b) 10mA
c) 0.87mA
d) 1ma
Answer: b
Explanation:
IC= (VCC – VCE )/ (RC+RE)
VCE = 0 in saturation
ICsat=VCC/(RC+RE)=0.87mA.
11. Comparing fixed and collector to base bias
which of the following statement is true?
a) Fixed bias is more stable
b) Collector to base bias is more stable
c) Both are the same in terms of stability
d) Depends on the design
Answer: b
Explanation: For fixed bias circuit, S = 1+beta,
more the beta, lesser the stability
For collector to base bias S =
(1+beta)/(1+beta(RC/RC+RB))
Hence collector to base bias is more stable.
12.What is the current flowing through the
R1 resistor for voltage divider (R1=R2=1KΩ,
VDD=10V)?
a) 5mA
b) 3mA
c) 1mA
d) 2mA
Answer: a
Explanation: IR1=IR2 =VDD/R1+R2
=>IR1 = 10/2KΩ
=>IR1 = 5mA.
14. For a transistor amplifier with self- biasing
network, the following components are used:
R1 = 4KΩ, R2 = 4KΩ and
RE = 1KΩ,
the approximate value of stability factor will be
(a) 4
(b) 3
(c) 2
(d)1.5
Solution : B
Approximate Formula for large value of Beta,
S=(Re+Rb)/Re
15. The biasing circuit that gives best stability
to Q point is
(a) base resistance biasing
(b) feedback resistor biasing
(c) potential divider biasing
(d) emitter resistor biasing
Solution: C
16. For a Voltage divider circuit having
RC=R1=R2=RE=1KΩ, if VCC=20V, find IC when
Vce = VCC?
a) 1mA
b) 2mA
c) 20mA
d) 0
Answer: d
Explanation: When Vce = Vcc , no current is
flowing in the output circuit and hence
answer
17.What is the Thevenin’s voltage (VTH) in a self
bias shown below?
a) VCCR2/R1+R2
b) VCCR1/R1+R2
c) VCCR2/R1-R2
d) VCCR2/R1-R2
Answer: a
Explanation: The base current cannot be
obtained directly from the KVL or KCL
applications. The VCC and VBE cannot come under
a single equation. So, the circuit is changed with
a Thevenin’s voltage (VTH) and Thevenin’s
resistance
18. A silicon NPN transistor is used and it has a large
value of β. Find the required value of R2 when IC=1mA
a) 10kΩ
b) 20kΩ
c) 30kΩ
d) 40kΩ

Answer: d
Explanation: For silicon, VBE=0.8V, VCE=0.2V.
IC=1mA . IC=VTH-VBE/RE. By pitting the values, we
have VTH=1.3V. R2 can be found from, VTH =
VCCR2/R1+R2. We get R2=40KΩ.
20. The universal bias stabilization circuit (Self-Bias) is the
most popular because
(a) IC does not depend on transistor characteristic
(b) its β sensitivity is low
(c) voltage divider is heavily loaded by transistor base
(d)Ic equals Ie

Solution : B
22. What will happen if a capacitor is connected in parallel
with RE in the amplifier design which uses emitter feedback
bias circuit?
a) No changes
b) Gain value increases
c) Feedback increases
d) Gain value remains the same but feedback doubles
Answer: b
Explanation: Since the capacitor acts as a short circuit during
high frequency, there will be no feedback and hence gain
increases. All of the current will flow to ground through a
capacitor which acts as a short circuit.
Bias Compensation Techniques :
Compensation techniques use temperature sensitive
devices such as diode, transistors, thermistors, sensistors
etc. to maintain operating point constant.
Some of the bias compensation techniques are listed below
Thermistor compensation
Sensistor compensation
Diode compensation
Sensistor compensation technique :
 Sensistors have a positive temperature co-efficient .
 Its resistance increase with increase in temperature as shown
Diode compensation technique:

 Compensation for Vbe

 Compensation for Ico
1. Which of the following components are used for
bias compensation in transistor circuit
(a) resistors
(b) rectifier diodes
(c) thermistors
(d) both (b) and (c) above
Solution : D
 2.What is the compensation element used for variation
in VBE and ICO?
a) diodes
b) capacitors
c) resistors
d) transformers

Answer: a
Explanation: A diode is used as the compensation
element used variation in VBE and ICO. The diode used
is of the same material and type as that of transistor.
Hence, the voltage across the diode has same
temperature coefficient as VBE of the transistor.
4.Increase in collector emitter voltage from 5V to 8V
causes increase in collector current from 5mA to
5.3mA. Determine the dynamic output resistance.
a) 20kΩ
b) 10kΩ
c) 50kΩ
d) 60kΩ
Answer: b
Explanation: ro=∆VCE/∆IC
=3/0.3m=10kΩ.
6. Which process plays a crucial role in devising the
independency of operating point over the variations in
temperature or transistor parameters?
a) Bias stabilization
b) Bias compensation
c) Bias stabilization & compensation
d) NO process
Answer: a
Explanation: Bias stabilization is a process which makes
the operating (Q) point independent of change in
temperature or any change in transistor parameters.
7.What is /are the purpose/s of adopting stabilization and compensation
techniques?
a) To provide maximum bias
b) To provide thermal stabilization
c) To provide stable bias & thermal stabilization
d) To provide minimum bias
Answer: c
8. A Thermistor has low resistance.
a) True
b) False
Answer: b
Explanation: Thermistors generally have an extremely high
value of resistance.
Thermal Runaway
The max power which a transistor can dissipate (power
that can be drawn from the transistor) will be from mW to
a few hundred Watts.
The maximum power is limited by the temperature also
that the collector to base junction can withstand.
For Silicon transistor the max temperature range is 150°C
to 205°C and for Germanium it is 60°C to 100°C.
For Germanium it is low since the conductivity is more
for Germanium compared to Silicon.
 The junction temperature will increase either-because
of temperature increase or because of self heating.
 As the junction temperature rises, collector current
increases.
 So this results in increased power dissipation.
 Temperature increases and Ie still further increases.
 This is known as Thermal Runaway.
 This process can become cumulative to damage the
transistor.
Now
1. Thermal runaway is_________
a) an uncontrolled positive feedback
b) a controlled positive feedback
c) an uncontrolled negative feedback
d) a controlled negative feedback
Answer: a
Explanation: Thermal runaway is a self destruction process in
which an increase in temperature creates such a condition
which in turn increases the temperature again. This
uncontrolled rise in temperature causes the component to get
damaged.
2. Discrete transistors T1 and T2 having maximum collector current rating of
0.75A are connected in parallel as shown in the figure. This combination is
treated as a single transistor to carry a signal current of 1A, when biased with
a self bias circuit. When the circuit is switched ON, T1 had draws 0.55A and
T2 draws 0.45A. If the supply is kept ON continuously, it is very likely
that______
a) both T1 and T2 get damaged
b) both T1 and T2 will be safe
c) only T1 gets damaged
d) only T2 gets damaged
Answer: c
Explanation: The T1 transistor is having more power dissipation as it is
drawing 0.55A. When power dissipation increases, the temperature increases
and this leads to the ultimate further increase in the current drawn by T1. The
current drawn by T2 will be reduced as the sum of currents drawn by T1 and
T2 should be constant.
3. Which of the following biasing techniques are prone to
thermal runaway?
a) self bias
b) collector to base bias
c) fixed bias
d) the biasing technique is identified by temperature
effect
Answer: c
Explanation: The collector current of a fixed bias transistor
is IC= β(VCC-VBE)/RB. When the temperature is increased,
the reverse saturation increases. The collector current also
increases. This in turn increases the current again which
leads to the damage of transistor
4. Changes in the temperature will not affect the bias
point.
(a) True
(b) False
Answer: b
Explanation: The temperature changes the β value of
the Transistor which wills in turn shifts the Q-point of
the Transistor. Once the temperature changes, it will
increase the mobility of electrons resulting in a change
of system current, hence temperature does affect the
transistor parameter.
5. The condition to be satisfied to prevent thermal runaway?
a) ∂PC/∂TJ > 1/Q
b) ∂PC/∂TJ < 1/Q
c) ∂PC/∂TJ > 1/Q
d) ∂PC/∂TJ < 1/Q
Answer: b
Explanation: PC is the power dissipated at the collector
junction. TJ is junction temperature which varies. The
difference between these temperatures is directly
proportional to the power dissipation. Here, Q is called as
thermal resistance which is constant for a given device.
6. The total thermal resistance of a power transistor and heat sink,
H, is 20°C/W. The ambient temperature is 25°C and
(TJ)MAX=200°C. If VCE=4V, find the maximum collector current
that the transistor can carry without destruction.
a) 3.67A
b) 7.56A
c) 2.19A
d) 1.56A

Answer: d
Explanation: PD =(TJ-TA)/ H
=200-75/20=6.25W.
Now, IC = 6.25/4=1.56A.
 7.A silicon power transistor is operated with a heat sink
HS-A =1.5°C/W. The transistor rated at 150W (25°C) has
HJ-C =0.5°C/W and the mounting insulation has HC-S =0.6°C/W.
What maximum power can be dissipated if the ambient temperature
is 40°C and (TJ)MAX=200°C?
a) 70.6W
b) 61.5W
c) 37.8W
d) 56.9W
Answer: b
Explanation: PD=(TJ-TA)/ (HJ-C + HC-S +HS-A)
=(200-40)/(0.5+0.6+1.5=61.5W).
Biasing of Field Effect Transistor(FET)
1. Which of the following equations gives the relation between ID and
Vgs?
a) ID=IDSS (1-Vgs/Vp)2
b) ID=IDSS (1-Vgs/Vp)1
c) ID=IDSS (1-Vgs/Vp)3
d) ID=IDSS (1-Vgs/Vp)4
Answer: a
Explanation: The above equation called as Shockley’s equation depicts
the relation between ID and Vgs. When Vgs becomes equal toVp, the
current will become zero, which clearly satisfies the physical nature of
FET.
2. For a fixed bias circuit the drain current was
1mA, what is the value of source current?
a) 0mA
b) 1mA
c) 2mA
d) 3mA

Answer: b
Explanation: We know that for an FET same
current flows through the gate and source terminal
hence source current is 1mA
3. For a fixed bias circuit the drain current was
1mA, VDD=12V, determine drain resistance required
if VDS=10V?
a) 1KΩ
b) 1.5KΩ
c) 2KΩ
d) 4KΩ
Answer: c
Explanation: VDS=VDD-ID RD
=>10=12-RD×1mA
=>RD=2/1mA=2 KΩ.
4.Find the gate to source voltage for voltage divider having
R1=R2=2KΩ and VDD=12V, ID=1mA and RS=4KΩ?
a) 3V
b) 2V
c) 0V
d) 1V
Answer: b
Explanation: VG = R2×VDD/R1+R2
=>VG=2×12/4
=>VG=6V
=>VGS=VG-ID Rs
=>VGS=2V.
Some more GATE Questions with Solutions
7. A transistor circuit is given below. The Zener diode breakdown voltage is 5.3V as shown.
Take base to emitter voltage drop to be 0.6V. The value of the current gain 𝜷 is ___ .

Sol: V′ = 5.3V,VBE = 0.6

−5.3+𝑉𝐵𝐸 + 𝐼𝐸 470 = 0
4.7
𝐼𝐸 = = 10mA
470
10−V′ = 4.7kΩ×I′ ⇒ I′ = 1mA
𝐼𝐸
𝐼𝐵 = I′−0.5 = 0.5mA ⇒β= −1 = 20−1 = 19
𝐼𝐵
24. The stability factor S(ICO) for the network shown here

1. 100 2. 101 3. 99 4. 1

For self-bias configuration, the stability factor is defined as

For self-biased configuration 𝐼𝐵 is constant hence

Stability factor is S(𝐼𝐶𝑂 ) = 1 + β = 1 + 100 = 101

27. In the given circuit, what is the value of collector current flowing in the transistor?

1. 14.36 μA 2. 22 μA 3. 9.73 μA 4. 13 μA
Sol: The given circuit is of a voltage regulator, Redrawing it, we get,
The load voltage is VL = VZ + VBE

= 10 + 0.7 = 10.7 V

(because of zener diode)

Vi−VL 25−10.7V
input current, Ii = = = 95.33 μA
Ri 150kΩ

VL 10.7V
Load current,IL = = = 85.6 µA
RL 125kΩ

Current through zener diode is very less compared to collector current due to β of the transistor. So,
we will neglect it in the calculations.

∴ Collector current, IC = Ii – IL

= 95.33 – 85.6 = 9.73 µA

35. The common emitter forward current gain of the transistor shown is βF = 100. The transistor operates
in

1. Saturation Region 2. Cut – off Region

3. Reverse active region 4. Forward active region
 Applying KVL through Collector Base terminals,
Sol: 10 - 103IE – 0.7 – 270 × 103 IB = 0

103 (1 × β)IB + 270 × 103 IB = 9.3

9.3
IB = = 25.06 μA
(270+101)×103

IC = 2.506 mA

⇒ IE = 2.5318 mA

Applying KVL through CE terminals

10 − 103 IE − 𝑉𝐶𝐸 − 103 IC =0

VCE = 10 - 103 (IC + IE)

= 10 - 103 × 5.0378 × 10-3 = 4.962 V

Since VCE > 0, hence the transistor is in forward active region. Answer: 4
36. The three terminal linear voltage regulator is connected to a 10 Ω load resistor as shown What is the power dissipated in the transistor?

1. 0.6 W 2. 4.2 W 3. 2.4 W 4. 5.4 W

Sol:

VE + 0.7 – 6.6 = 0
VE = 5.9 V.
V
IL = 10E = 0.59 A
Applying KVL,
Vin - VCE - VE = 0

VCE = 10 – 5.9 = 4.1 V

V −V 6.6 − 5.9
I1 = x 3 E = = 0.7 mA
10 103

Applying KCL at E,

0=-IL + IE + I1

IE = IL – I1

= 0.59 – 0.7 × 10-3 = 0.5893 A

Assuming IE ≈ IC = 0.5893
Power dissipated, PD = VCE × IC= 4.1 × 0.5893= 2.416 W.
38. The transistor circuit shown uses a ‘Si’ transistor with VBE = 0.7 V, IC ≈ IE and a DC current gain of
100. The value of Vo is

1. 4.65 V 2. 5 V
3. 6.3 V 4. 7.23 V

Apply KVL from 10 V to group through B – E terminals

10 - 104 IB - VBE – 100 IE = 0 ⇒ 10 – 0.7 = 104 IB + 100 IC

because β = 100 and IC = IE (approximately)

9.3 = 100 IC + 100 IC = 200 IC

Vo = 100 IC = 4.65 V
44. The transistor in the given circuit should always be in active region. Take VCE(sat) = 0.2 V,
VBE = 0.7 V. The maximum value of RC in Ω which can be used is

Sol: VCE(sat) = 0.2, VBE = 0.7, β = 100

Applying KVL around i/p loop
5 - IBRS – 0.7 = 0
5−0.7 4.3
IB = = =2.15 mA
2kΩ 2×103
IC = βIB = 100 × 2.15 mA = 0.215 A.
Applying KVL around o/p loop,

5 - ICRC - VCE = 0

VCE = 5 – 0.215 RC

For active region, VCE > VCE(sat)

VCE > 0.2 V

5 – 0.215 RC > 0.2

0.215 RC < 5 – 0.2

4.8
𝑅𝐶𝑚𝑖𝑛 = ≈ 22.32
0.215
47. For the given circuit, Ic = 2mA & VCE = 12 V what are the value of R1 & RC respectively

1. 22 kΩ , 2.5 kΩ 2. 25.56 kΩ, 2 kΩ

3. 26.73 kΩ, 1.5 kΩ 4. 28.92 kΩ, 3 kΩ
Sol:

VE = IE RE ≈ IC RE = 2mA × 5 kΩ = 10V

VB = VBE + VE = 0.7 + 10 = 10.7 V

R2 VCC 20k × 25
VB = ; 10.7 =
R1 + R2 R1 +20k

20k × 25
R1+20k = ; R1 + 20k = 46.73 k ⇒ R1 = 26.73 kΩ
10.7

VCC − VC VCC −(VCE + VE)

RC = ; RC =
IC IC

25−(12+10)
RC = ; RC = 1.5 kΩ
2mA
51. The Zener voltage of the Zener diode is 3.3V and the base to emitter voltage drop of the
transistors are 0.7V.Then the load voltage of the voltage regulator shown below is -------------
volt.

Sol: Vout = VBE1 + VBE2 + VZ

= 0.7 + 0.7 + 3.3
= 4.7V
56. The output voltage of the circuit is –

1. 5 V 2. 0 V
3. 10 V 4. 4.2 V

For a transistor to conduct, the emitter-base terminal must be forward biased and the collector-base reverse
biased.
Sol:
For the given configuration, the emitter voltage for the pnp transistor is positive that indicates a reverse-
biased pnp transistor.
So, the pnp transistor does not conduct.
The equivalent circuit is drawn as: ∴ 5 = 5𝐼𝐵 + 0.7 + 2(1+𝛽) 𝐼𝐵
4.3
Or 𝐼𝐵 =
5+202

101 × 4.3
∴ 𝐼𝐸 = = 2.09 mA
207
∴𝑉𝑜 = 2𝐼𝐸 = 4.19V ≃ 4.2 V
57. β of a transistor

1. decreases with the increase of temperature 2. increases with the increase of temperature
3. remains same with increase in temperature 4. none of these

PC = Ic2 .R and IC =β . IB
Sol:
As temperature increases then Power dissipation across collector junction
will increases which leads to increase the collector current.

Hence β of transistor will increases.

66. A FET is a better chopper than a BJT because it has
1. Lower off-set voltage 2. Higher series ON resistance
3. Lower input current 4. Higher input impedance

Sol: To turn on BJT a minimum of 0.7V is required but in FET there is no such type of Offset Voltage.
So FET acts like a better chopper than a BJT.
Answer: 1
67. The common emitter amplifier shown in figure is biased using a 1 mA ideal current source. The
approximate base current value is

1. 0 μA
2. 10 μA
3. 100 μA
4. 1000 μA

Sol: IE = 1 mA

IC ≈ IE = 1 mA

I
IB ≈ C = 10 μA
β