Documente Academic
Documente Profesional
Documente Cultură
Liwei Lin
Associate Professor, Department of Mechanical Engineering
Co-Director, Berkeley Sensor and Actuator Center
University of California at Berkeley
l IC Packaging
– well-developed (dicing, wire bonding ...)
– 30% to 95% of the whole manufacturing cost
l MEMS Packaging
– specially designed packaging processes
– difficult due to moving structures, chemicals ...
– the most expensive process in
micromachining
Example of Corrosion
l Migrated-gold resistive shorts in the presence of
moisture and chlorine
l Soldering
– Tin-Lead solder (indium and
silver are sometimes added
to improve the fatigue
strength)
– Tin-Lead oxidizes easily and
should be stored in nitrogen
l Brazing
– Eutectic Au-Sn (80:20) at 280
- 350oC for stronger, more
corrosion-resistant seal and
the use of flux can be
avoided
6/17/2004 Liwei Lin, University of California at Berkeley 17
Welding
l Most popular method in high-reliability packages
l High-current pulses produce local heating 1000-1500oC
l Can accommodate greater deviations from flatness
l Electrode, e-beam and laser can be used as energy sources
l MEMS Gyroscope
– Example: surface-
micromachined
vibration gyroscope by
Draper Lab
l Key Issues
– Free standing
microstructures
– Hermetic sealing
– Vacuum encapsulation
Draper’s vibration micro gyroscope
6/17/2004 Liwei Lin, University of California at Berkeley 21
Example – Pressure Sensor
l Pressure Sensor
– Example: bulk-
micromachined
pressure sensor by
Motorola Inc.
l Key Issues
– Exposure to external
pressure source
– Housing for harsh
environment
– Interface coating
Motorola’s MEMS-based pressure sensor
6/17/2004 Liwei Lin, University of California at Berkeley 22
Example – Optical MEMS
l Optical MEMS
– Example: surface-
micromachined DMD Projection
by Texas Instrument
Optics
l Key Issues
DMD
– Free standing
microstructures
– Hermetic sealing Color Projected
– Temperature sensitive Wheel Image
microelectronics Lamp
TI’s DMDTM Chip for Projection Display
6/17/2004 Liwei Lin, University of California at Berkeley 23
Example – Microfluidics
l Microfluidics
– Example: diffusion-
based sensor by
Micronics Inc.
l Key Issues
– Micro-to-Macro
interconnector
– Good sealing
– Temperature sensitive
materials
Micronics Inc.’s T sensor
6/17/2004 Liwei Lin, University of California at Berkeley 24
Example – BioMEMS
l BioMEMS
– Example: Lab-on-a-chip
by Caliper Inc.
l Key Issues
– Micro-to-Macro
interconnector
(capillary tubes?)
– Good sealing
– Temperature sensitive
materials
Caliper’s lab-on-a-chip
l Example: Surface-
micromachined micro
electromechanical
filters
Beam length 150 µm
Beam width 2 µm
Beam thickness 2 µm
Suspension 2 µm
Resonance 18 kHz
Quality factor 30 in air Lin, Howe and Pisano, JMEMS,
Vol. 7, pp. 286-294, 1998
Substrate Substrate
Silicon Substrate
Anodic Bonding
l Sodium-rich glass (e.g. Corning #7740 -
Pyrex)
l Operation temperature is well below the
melting temperature of glass for 5 ~ 10
minutes
l Surface roughness < 1 µm
l Native oxide on Si must be thinner than
0.2 µm
l Bonding temperature below 450oC or the
thermal properties of materials begin to
deviate seriously
6/17/2004 Liwei Lin, University of California at Berkeley 39
Anodic Bonding Temperature
l Bonding temperature > 280oC --> Si under tension
l Bonding temperature < 280oC --> Si under
compression
Anode
5Esashi et al., “Low Temperature Silicon to Silicon Bonding with Intermediate Lowe Melting Point Glass,”
Wafer-Wafer Transfer
l Wafer-to-wafer transfer by HEXSIL and Si-Au eutectic
bonding
Self-Assembly
l Assembly of micromechanical devices is a big
challenge
l Self-assembly provides an alternative way to
either manual or automated assembly
l Example: fluidic self-assembly
Liwei Lin
Associate Professor, Department of Mechanical Engineering
Co-Director, Berkeley Sensor and Actuator Center
University of California at Berkeley
l Example: Surface-
micromachined micro
electromechanical
filters
Beam length 150 µm
Beam width 2 µm
Beam thickness 2 µm
Suspension 2 µm
Resonance 18 kHz
Quality factor 30 in air Lin, Howe and Pisano, JMEMS,
Vol. 7, pp. 286-294, 1998
MEMS Post-Packaging
l MEMS Packaging Processes
– Integrated Processes
• Highly process dependent, not versatile
• Not suitable for post-processing
– Wafer Bonding Processes
• Need high temperature which may damage
microelectronics or temperature sensitive MEMS materials
• Require very smooth and flat surfaces
l Localized Heating & Bonding Processes
– Localized Eutectic, Fusion bonding and others
Surface +
Localized Eutectic Bonding
• Conventional oven, Si-Au • Localized eutectic bonding
eutectic bonding - uniformity?? excellent bonding strength
Surface +
Localized Fusion Bonding
• Silicon-to-glass fusion • After HF dipping
bonding - heater disappeared excellent bonding result
Surface +
Localized Solder Bonding
Before Bonding
• Indium solder as intermediate
layer - Al Dew Point Sensor
After Bonding
Surface +
Localized Vacuum Encapsulation
• Vacuum encapsulated comb • Long-term testing under the
resonator under a glass cap vacuum packaged cavity
12000
12000
9000
9000
factor
Qfactor
6000
Q
3000
00
00 7 414 21 8 28 3512 42 49
16 56 20
63 70 24
Weeks
Weeks
6/17/2004 Liwei Lin, University of California at Berkeley 17
Cheng, Hsu, Lin, Najafi and Nguyen, MEMS’01, pp. 18-21, 2001
Surface +
Vacuum Level and Outgas
Quality factor vs. pressure Ti/Au coating to reduce outgas
Q factor vs. Pressure
-45
Before
Transmission[dB]
12000 Annealing
Q~500
10000 After
Annealing -55
8000 Ti/Au Coating
Q factor
Before
6000 Annealing
with higher Q Q~25
4000 -65
2000
0
0.0001 0.01 1 100 10000 -75
97 101 105 109
Torr Frequency [KHz]
Surface +
Wafer-Level Processing
Gas resident time Wafer-level packaging scheme
0.8
0.7
Cavity Pressure (torr)
0.6
0.5
0.4
0.3
0.2
0.1
0
0 2000 4000 6000
Gas Resident Time (sec)
Surface +
Localized CVD Process
• Temperature distribution
on a microheater • Surface-reaction limited
deposition process
• Experimental result
Surface +
Localized CVD Bonding
Selective CVD Polysilicon
Polysilicon
Microheater Packaging Cap (Si) Packaging Cap (Si)
Oxide
Polysilicon
Interconnection
Device Substrate (Si) Device Substrate (Si)
(a) (b)
Surface +
Localized CVD Trimming
• Localized CVD for selective trimming
• 1.5 x 1 x 100 µm3 with 0.7 mA input current for 20 min
• non-uniform deposition --> surface reaction limited
Encapsulation
l Plastics to Silicon, to Glass l Direct encapsulation
and to Plastics bonding of liquid
Control Unit
Horn Glass Cover
In/Al (5 µm)
Die Au/Al (0.6, 1 µm)
Si Chip
Holder
Piezoelectric Fixture
Actuator
Guide-Slider
6/17/2004 Liwei Lin, University of California at Berkeley 24
Kim and Lin, MEMS’02, pp. 415-418, 2002
Air
Air
Solder
Substrate Ring
Coil 10µm Glass to
metal
bonding
Glass to glass
Sample Substrate
bondng
50µm
Platform
6/17/2004 Liwei Lin, University of California at Berkeley 27
Luo and Lin, Transducers’01
Surface +
Nanosecond Laser Welding
u Ultrafast bonding, Restricted heating zone,
Parallel packaging
Patterns
which
Mask
pre-define Bonding
results
Bonding
areas
Mask
6/17/2004 Liwei Lin, University of California at Berkeley 28
Chiao and Lin, Sensors and Actuators, Vol. 91A, pp. 404-408, 2001
Lamp
• Low thermal mass
• Ramp up- 100 oC/sec
• Cool down- 50 oC/sec
( 1000-400 oC )
• Low thermal budget
( D x t is small )
Thermal Radiation
• Wafer-level process
Cap Wafer
Device Wafer
Comb-drive
Resonator
Interconnection
Lines
Bump
Surface +
RTP Bonding (Al to Glass or Nitride)
u RTP (Rapid Thermal Processing) for device
encapsulations (750oC for 10 seconds)
Surface +
Accelerated Hermeticity Testing
l Lognormal Distribution -- l MIL-STD-883E method
failure process 1014.10 gross and fine leak
tests for 60 packages
l Pass Helium leak test with
rate < 5x10-8 atm-cc/sec
l Autoclave chamber 2.7atm
130oC 100% RH steam for
864 hrs
l 90% confidence – 0.017
year in harsh environment
which is in equivalent to
about 50 years in normal
, t in hours usage
6/17/2004 Liwei Lin, University of California at Berkeley 33
Chiao and Lin, Transducers’01
Quality Factor
1500
1000
500 400
200
0
0 4 12
Time of Pre-Baking in Vacuum ( hours)
l A comb-resonator is vacuum
packaged l Quality factor increases with
the pre-baking time
l Quality Factor~ 1800±200
l Pressure inside the package ~
200mTorr
6/17/2004 Liwei Lin, University of California at Berkeley 36
Chiao and Lin, Hilton Head’02
2500 18.64
Resonant Frequency(KHz)
Q Factor
1
Resonant Frequency 18.63
Normalized Amplitude
2000 0.8
Quality Factor
18.62
0.6
18.61
1500
0.4 Before autoclave
18.6 After autoclave for 24 hours
0.2
1000 18.59 24.56 24.58 24.6 24.62 24.64 24.66 24.68 24.7
1 2 3 4
6/17/2004 Weeks Liwei Lin, University of California at Berkeley Frequency ( KHz ) 37
Summary
l Special packaging schemes are discussed
l Localized Thermal Bonding Processes
– Localized Eutectic, Fusion and Solder Bonding
– Localized CVD & Nanosecond laser Bonding
– Localized ultrasonic bonding & inductive heating
l Rapid Thermal Bonding Process
– RTP silicon nitride-to-aluminum bonding
– Accelerated hermeticity tests
l Two vacuum post-packaging methods are
demonstrated
– Localized solder bonding
– RTP bonding