OLED - Production Process

OLED 제조 공정
School of Advanced Materials and Systems Engineering

Kumoh National Institute of Technology
Han-Ki Kim
hkkim@kumoh.ac.kr
Nano Precision Technology

Outline
1. Introduction of OLEDs
2. Fabrication Process of PMOLED
- Patterning Process
- Organic thin film evaporation process
- Electrode deposition process
- Encapsulation process
3. Fabrication process of AMOLED

- Fabrication Thin Film Transistor
4. Fabrication of polymer OLED

Introduction
1. What is an Organic Light Emitting Diodes (OLEDs)?
“유기EL (OLED)은 형광성 유기화합물 박막에 전류를 흘려주면 전자(electron)와 정공(hole)이 유기
화합물층에서 결합하면서 빛이 발생 되는 현상을 이용한 자발광 형 Display ”
전자/홀 주입 전자/홀 이동
PMOLED
빛 발광 전자/홀 결합

Introduction
2. Diodes structures of small molecule-based OLEDs
HIL: Hole Injection Layer (홀 주입층)
HTL: Hole Transfer Layer (홀 수송층)
EML: Emission Material Layer(발광층)
ETL: Electron Transfer Layer(전자 수송층)
EIL: Electron Injection Layer(전자 주입층)

Introduction
3. Emission mechanism
100~200nm
Anode Cathode
-
-
HTL -
EML ETL
HIL EIL
-
+
Exciton
metal
ITO +
+
+
Fluorescence(형광) Phosphorescence (인광)
+ -
1 : 3
Introduction
4. Characteristics of OLEDs
• Super viewing performance:
Emissive bright colors, broad color gamut, wide viewing angle, fast response time,
High resolution, and high contrast
• Excellent operation characteristics:
Low operating voltage, power efficient, and wide temperature range
• Enabling form factor:

Thin, light-weight, rugged, and conformable
• Low cost:
Simple processing, vacuum deposition, inkjet printing, spin coating,
Roll-to-roll processing
• Stability(Short life time)

Organic materials, electrode materials, interface, encapsulation
• Sunlight readability
• Difficulty of fine patterning
• Low temperature process
• Difficulty of large area

Introduction
OLED LCD

Introduction
5. Applications of OLEDs

Introduction
6. Commercialized products

Introduction
7. Large area prototype OLED
Samsung Electronics
40’’ WXGA (1280×800)
A-Si TFT AMOLED

Introduction
8. Kinds of OLEDs depends on materials
Small Molecular OLED Polymer OLED
Cathode
Cathode
Electron Transport Layer
Emission Layer Emission Layer
Hole Transport Layer Hole Transport Layer
Hole Injection Layer Anode
Anode
Glass substrate
Glass substrate
High emission efficiency Low voltage operation

Full color Easy of fabrication
Multi layer structure Possibility of polarization
Possibility of large area FPD High stability
Easy of Pexel Possibility of large area FPD
Shadow Mask Ink-Jet & Laser
(Vacuum deposition) (Atmosphere Depo)
Crystallization Difficulty of Pixel
Interdiffusion Difficulty of multi layer

Introduction
8. Kinds of OLEDs depends on Driving method

Fabrication Process of PMOLED
1. Detailed structure of PMOLED
방습제( BaO, 분말 )
FILTER
ENCAPSULATION( METAL )
2.0t(glass : 0.7t)
Cathode( Al, 1000~1500 Å, 1200 ℃ 이상 )

EIL( LiF, 20 Å, 800~1000 ℃ )
ETL( Alq3, 400 Å, 300 ℃ )
EML( Alq3 : C6 1.5% green , 300 Å ,150~200 ℃
HTL( NPD or S -TAD, 500 Å, 250~300 ℃ )
HIL( CuPc, 200 Å, 400℃ )
glass Anode( ITO, 10ohm 이하 )
PR - SEPARATOR( Cathode patterning )
INTER - INSULATOR
A B

2. Schematic manufacturing process
Bus Electrode Patterning
Anode (ITO) Patterning

Substrate Patterning Process
Inter-Insulator Patterning
Cathode Separator Patterning
ITO Surface Pretreatment
Organic Multi-layer Deposition

(HIL / HTL / EML / ETL / EIL)
Panel Fabrication Process
Cathode Deposition
Encapsulation
TCP Bonding
Module Fabrication Process
PCB Adhesion

2. Schematic manufacturing process
A 전극형성
기판세정 보조전극(Cr) Patterning ITO(양극) Patterning
Inter-Insulator 형성 Cathode Separator Patterning
B 유기막 증착
유기물 증착
기판세정 및 전처리 (HIL/HTL, EML/ETL, EIL) Cathode 증착
C Encapsulation.
상판(Metal) 세정 흡습제 / 투습지 부착 접착제 도포 및 UV경화
편광판 부착 기판절단 및 Cell세정
D Module
Panel Electronic FPC Connect Housing Assembly
Module Test

3-1. Substrate patterning process
1. Cr/ITO/Glass Substrate
2. Cr patterning

3. ITO Patterning
4. I/I Coating

5. I/I Patterning
6. Separator Coating

7. Separator Patterning

3-2. Thermal evaporation: organic layer deposition

3-2. Panel deposition process: Thermal evaporation process

3-2. Panel deposition process: Thermal evaporation process
Key parameters for uniformity and organic properties
• Deposition rate
• Glass rotating
• Source-Glass distance
• Working pressure
• Materials

3-2. Panel deposition process: Plasma/UV ozone treatment
-. Oxygen plasma treatment of ITO can result in a change in work function.

-. Work function change correlates with increase in injected current in
simple “ hole-only” organic devices.
LUMO LUMO
EF
h+ EF
ITO h+ HOMO
HOMO ITO

3-2. Panel deposition process: Plasma/UV ozone treatment

3-2. Panel deposition process
8. HIL Evaporation
9. HTL Evaporation

10. EML Evaporation

Deposition rate control stability : Alq3

11. ETL Evaporation
12. Al Evaporation


3-3. OLED panel before encapsulation

3-4. Encapsulation
: To prevent intrusion of water vapor and oxygen
Getter Dryer
Encapsulation Housing
H 20, O 2
~ 1.5 mm
Metal Cathode
Organic Layers
UV Adhesive
ITO Anode
Glass Substrate

3-4. Encapsulation

3-4. Encapsulation of Current PMOLED

3-4. Encapsulation process
Metal Can 장착 투습제 투입 Sealant Dispensing
Tray
Can
흡습제
Assembly 및 UV 경화
증착기판 반송
UV
UV Mask
증착기판
증착기판
Spring 가압

3-5. Mass production line

3-5. Mass production line (System of Doosan DND)

Fabrication Process of AMOLED
1. Structure of AMOLED

2. Detailed process
A 전극형성
기판세정, Pre-compaction Buffer 절연막 및 a-si 증착 Laser 결정화(a-si의 poly化)
Poly Si Patterning Gate 절연막 증착 Gate Metal 증착 / Patterning
이온 주입 및 활성화 층간 절연막 증착 / Patterning SD Metal 증착 / Patterning
Contact 열처리 보호층 증착 / Patterning 화소전극 증착 / Patterning
평탄화막 도포 / Patterning
B 유기막 증착
유기물 증착
기판세정 및 전처리 (HIL/HTL, EML/ETL, EIL) Cathode 증착
C Encapsulation
상판(Metal) 세정 흡습제 / 투습지 부착 접착제 도포 및 UV경화
편광판 부착 기판절단 및 Cell세정
C봉 지
상판(Metal) 세정 흡습제 / 투습지 부착

2. Detailed process

3. a-Si TFT and Poly Si TFT



a-Si TFT 제조 공정 LTPS-TFT 제조 공정

2-8. Si 결정화 공정

2-6-1. Excimer Laser Annealing (ELA) 공정
:UV 파장의 레이저를 비정질 Si 박막에 조사하면 표면 500A이내에서 완전 흡수되어,
급속히 용융 및 응고가 일어나 Poly-Si으로 변한다

2-6-2. MIC/MILC
:a-Si 상에 Ni seed를 형성 시킨 후 열처리를 하게 되면 Ni이 결정성장을 위한 핵으로 작용하여
Poly Si 이 성장

Fabrication of Polymer OLED
1. Polymer deposition

1. Ink-jet print

1. Ink-jet print

2. POLED fabrication process

2. Full color AMPOLE (Samsung SDI)
Items Specification Specification
Display Size 3.6” 2.2”
Resolution QVGA Q-CIF
66 x RGB x 198
Pixel Pitch (µm) 80X240 um
(128ppi)
Gate, source driver Gate, source driver

Driver Circuit
integrated (CMOS) integrated (CMOS)
3.6” 2.2”
AM PLED AM PLED Peak Luminescence ~ 100 cd/m2 ~ 100 cd/m2

3. Laser Induced Thermal Imaging Technology
Laser Induced Thermal Imaging Technology

¾ Advantages: High Resolution, Multi-Layer Stacking Capability
¾ Challenges:
Performance Degradation after Printing (Blending Issues)
Uniform Film Roll Coating
Sensitive Process to Particle Contamination
LASER Beam
LASER Beam
Plastic Film
LTHC
LEP LAYER
HTL
ITO

LITI Overall Process
Donor Film
LITI PLED
Device
Laser
LEP
Coating
Encapsulation
HTL
(Spin Coating)
LITI Process
Cathode
(R,G,B, 3 times)
Substrate (Evaporation)
with Anode

LITI Optical Imaging System
Laser
Laser Attenuator Expander - CW Nd:YAG Laser (1064nm)
- 8.0W on the image plane
Y-galvanometer - Spot Size: 300 x 40 µm @1/e2
Expander AOM
Stage
x-galvanometer - One-dimensional translation
Expander - Vacuum chuck for the substrate
Scanning
Scan Lens - Two galvanometers (x, y)
- Dithered laser beam (using AOM)
⇒ flat-top beam profiles
Stage
- Overall positional accuracy
: <2.5 µm (550mm x 650mm)

LITI Force Balance During LITI Transfer
Laser
Donor Film • LTHC/LEP Adhesive Force

- Weak force: Mass Transfer
LTHC - Strong: No Transfer
adhesion
LEP
• LEP/LEP Cohesive Force
- Strong: No Transfer/Mass Transfer
cohesion
adhesion
• LEP/Substrate Adhesive Force
Substrate - Weak: No Transfer/Spotty

LITI Color Pattering 개발 현황

¾ Full Color AM PLED 개발 Devices
3.6” 2.2”
AM PLED AM PLED

Thanks for your listening !

OLED - Production Process

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OLED 제조 공정

School of Advanced Materials and Systems Engineering

Nano Precision Technology

2. Fabrication Process of PMOLED

3. Fabrication process of AMOLED

4. Fabrication of polymer OLED

Nano Precision Technology

Nano Precision Technology

HIL: Hole Injection Layer (홀 주입층)

HTL: Hole Transfer Layer (홀 수송층)

EML: Emission Material Layer(발광층)

ETL: Electron Transfer Layer(전자 수송층)

EIL: Electron Injection Layer(전자 주입층)

Nano Precision Technology

• Enabling form factor:

• Stability(Short life time)

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

High emission efficiency Low voltage operation

Nano Precision Technology

Nano Precision Technology

Cathode( Al, 1000~1500 Å, 1200 ℃ 이상 )

Nano Precision Technology

Bus Electrode Patterning

Anode (ITO) Patterning

Cathode Separator Patterning

ITO Surface Pretreatment

Organic Multi-layer Deposition

Nano Precision Technology

Inter-Insulator 형성 Cathode Separator Patterning

편광판 부착 기판절단 및 Cell세정

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Key parameters for uniformity and organic properties

Nano Precision Technology

-. Oxygen plasma treatment of ITO can result in a change in work function.

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

10. EML Evaporation

Nano Precision Technology

Deposition rate control stability : Alq3

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Metal Can 장착 투습제 투입 Sealant Dispensing

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Nano Precision Technology

Poly Si Patterning Gate 절연막 증착 Gate Metal 증착 / Patterning

Laser Induced Thermal Imaging Technology

LITI Overall Process

LITI Optical Imaging System

LITI Force Balance During LITI Transfer

LITI Color Pattering 개발 현황