Lecture 20

Bipolar Junction Transistors (BJT): Part 4

Small Signal BJT Model

Reading:
Jaeger 13.5-13.6, Notes

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 Further Model Simplifications
((useful for circuit analysis)
y )

Neglect
Forward Active Small Terms
Ebers-Moll Mode

 VEB VT   VCB VT   VEB VT  VEB

I C   F I F 0  e  1  I R 0  e  1  I C   F I F 0  e  1  I R 0  I C  I S e VT
     

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 Modeling the “Early Effect” (non-zero slopes in IV curves)

IC iB1< iB2< iB3 •Base width changes due

to changes in the base-
collector depletion width
with changes in VCB.
iB3 (theory)
g T, which
•This changes
iB2 (theory)
iB1 (theory)
changes IC, DC and BF

VA VCE

Major BJT Circuit Relationships

VEB VEB
 vCE   vCE  iC I S VEB VT
iC  I S e VT
 iC  I S e VT
1    F   FO 1   iB   e
 V A   V A   F  FO

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 Small Signal Model of a BJT
•Just as we did with a p-n diode, we can break the BJT up into
a large signal analysis and a small signal analysis and
“linearize” the non-linear behavior of the Ebers-Moll model.
•Small
S ll signal
i l Models
M d l are only l useful
f l for
f Forward
F d active
i mode d
and thus, are derived under this condition. (Saturation and cutoff are
used for switches which involve very large voltage/current swings from the on to off states.)

•Small signal models are used to determine amplifier

characteristics (Example: “Gain” = Increase in the magnitude
of a signal at the output of a circuit relative to it
it’ss magnitude at
the input of the circuit).
•Warning:
Warning: Just like when a diode voltage exceeds a certain
value, the non-linear behavior of the diode leads to distortion
of the current/voltage curves (see previous lecture), if the
i t / t t exceedd certain
inputs/outputs t i limits,
li it the
th full
f ll Ebers-Moll
Eb M ll model d l
must be used.
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 Consider the BJT as a two-port Network

i1 i2
+ Two Port +
V1 V2
-
Network -

General “y-parameter” Network BJT “y-parameter” Network

i1=y11v1 + y12v2 ib=y11vbe + y12vce
i2=y21v1 + y22v2 ic=y21vbe + y22vce

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 Consider the BJT as a two-port Network

ib=y11vbe + y12vce
ic=y21vbe + y22vce

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 Consider the BJT as a two-port Network

o is most
often taken
as a
constant, F
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 Alternative Representations

IC
Transconductance g m  y 21   40 I C
VT
1  oVT  o
Input Resistance r   
y11 IC gm
1 V A  VCE
Output Resistance ro  
y 22 IC

Y-parameter Model Hybrid-pi Model

v1

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 Alternative Representations

g m vbe  g m r ib   o ib

Voltage Controlled Current Current Controlled Current

source version of Hybrid-pi
Hybrid pi source version of Hybrid-pi
Hybrid pi
Model Model

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 Single Transistor Amplifier Analysis: Summary of Procedure
Important!
Steps to Analyze a Transistor Amplifier
1.) Determine DC operating point and Step 1
calculate small signal parameters (see
next page)
2.) Convert to the AC only model. Step
•DC Voltage sources are shorts to ground 2
•DC Current sources are open circuits
•Large capacitors are short circuits
•Large inductors are open circuits Step
3.) Use a Thevenin circuit (sometimes a 3
Norton) where necessary. Ideally the
base should be a single resistor + a single
source. Do not confuse this with the DC Step
Thevenin you did in step 1. 4
4.) Replace transistor with small signal
model
5.) Simplify the circuit as much as Step
necessary
necessary. 5
6.) Calculate the small signal parameters
(r, gm, ro etc…) and then gains etc…
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Single Transistor Amplifier Analysis
Step 1 detail DC Bias Point
Important!

Thevenin
Ib

RTH
Vbe Ie

3V=IERE+Vbe+IBRTH
3V=IIC((o+1)/
3V 1)/o) Re+0.7V+I
0.7V IBRTH
3V=IB o((o+1)/o) Re+0.7V+IBRTH
3V= IB(100+1)1300+0.7+ IB7500
IB=16.6 uA, IC= IB o=1.66 mA, IE=(o+1) c/ o=1.67 mA
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Single Transistor Amplifier Analysis
Step 6 detail Calculate small signal parameters Important!

IC
Transconductance g m  y 21   40 I C  0 . 0664 S
VT
1  V 
Input Resistance r  y 11
 o T  o  1506 
IC gm
1 V  V CE V
Output Resistance ro  y 22
 A
IC
 A  45 . 2 K 
IC

880 Vout
RL= RC| R3| ro
RTH r
VTH=0.88 VS Vbe gmVbe

r
vout   g m vbe RL and vbe  vTh and vTh  0.88v S
RTh  r

vout  vout  vbe  vth   r 
Av  Voltage Gain         g m RL  0.88
vS  vbe  vth  v S   RTh  r 
 1506 
For Extra Examples see:
Av   0.0664 45,200 || 4300 || 100,000  0.88
Jaeger section 13.6, and  880  1506 
pages 627-630 (top of 630)
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Av  139 V / V ECE 3040 - Dr. Alan Doolittle
 Important!

Supplement Added to describe more details of the

Solution of this Problem

Bipolar Junction Transistors (BJT): Part 5

D t il off Amplifier
Details A lifi Analysis
A l i

Reading:
Jaeger 13.5-13.6, Notes

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Detailed Example: Single Transistor Amplifier Analysis
Important!

Notes on slides 14-25 were prepared by a previous student.

Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Step 1: Determine DC Operating Point Important!
Remove the Capacitors

Because the
impedance of a
capacitor is Z =
1/(jωC), capacitors
have infinite
impedance or are
open circuits in DC
(ω = 0).

Inductors (not present

in this circuit) have an
impedance Z = jωL,jωL
and are shorts in DC.

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Step 1: Determine DC Operating Point Important!
Determine the DC Thevenin Equivalent

Replace all connections to the transistor with their Thevenin equivalents.

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 Step 1: Determine DC Operating Point Important!

Calculate Small Signal Parameters

Identify the type of transistor (npn in this example) and
draw the base, collector, and emitter currents in their +
proper direction
di i andd their
h i corresponding
di voltage
l IC
polarities.
Applying KVL to the controlling loop -
((loopp 1):
)
VTHB – IBRTHB – VBE – IERE = 0
+ -
+
Applying
pp y g KCL to the transistor: IB VBE
-
IE = IB + IC +
IE
Because IC = βIB,
IE = IB + IC = IB + βIB = IB(1+β) 1 -

Substituting for IE in the loop equation:

VTHB – IBRTHB – VBE – IB(1+β)RE = 0

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Step 1: Determine DC Operating Point Important!

Plug in the Numbers

VTHB – IBRTHB – VBE – IB(1+β)RE = 0

+
VTHB – VBE – IB(RTHB + (1+ β)RE) = 0
IC
VTHB = 12R1/(R1+R2) = 3 V
RTHB = R1 || R2 = 7.5 kΩ -
Assume VBE = 0.7 V
Assume β for this particular transistor is
given to be 100. + -
+
IB VBE
3 – 0.7
0 7 – IB(7500 + (1+100)*1300) = 0 -
IB = 16.6 μA +
IC = βIB = 1.66 mA IE
IE = IB + IC = 1.676
1 676 mA
1 -

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Step 1: Determine DC Operating Point Important!

Check Assumptions: Forward Active?

VC = 12 – ICRC = 12 - (1.66 mA)(4300) = 4.86 V +

VE = IERE = (1.67
(1 67 mA)(1300) = 22.18
18 V IC
VB = VTHB – IBRTHB = 3 – (16.6μA)(7500) = 2.88 V
-
Check: VC
For an npn transistor in forward active:
+ - VB
VC > VB +
IB VBE VE
-
4.86 V > 2.88 V
+
IE
VB – VE = VBE = 0.7 V
2.88 V – 2.18 V = 0.7 V 1 -

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Step 2: Convert to AC-Only Model Important!

Short the Capacitors and DC Current Sources

• DC voltage sources are

shorts
h t (no
( voltage
lt
drop/gain through a
short circuit).
• DC current sources are
open (no current flow
through an open
circuit).
• Large capacitors are
shorts (if C is large,
1/jωC is small).
• Large inductors are
open (if L is large, jωL
is large).

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Step 2: Convert to AC-Only Model Important!

(Optional) Simplify Before Thevenizing

rc
r2 4 3 kΩ
4.3
30 kΩ rs
rs rc||rL
rL 100 2 kΩ 4.12 kΩ
2 kΩ r1 kΩ r1||r2
vs 10 kΩ vs 7.5 kΩ

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 Step 3: Thevenize the AC-Only Model Important!

rthC = rc||rL

rthB = rs||r
|| 1||r
|| 2 4 12 kΩ
4.12
rs
rc||rL vthC = 0 V
2 kΩ 4.12 kΩ 1.58 kΩ
r1||r2
7.5 kΩ rthE = 0 Ω
vs vthB = vs *
(r1||r2)/(rs+[r1||r2]) vthE = 0 V

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Step 4: Replace Transistor With Small Signal Model
Important!

rthC = rc||rL

rthB 4.12 kΩ
hB = rs||r1||r2 vthC
hC = 0 V

1.58 kΩ After replacing the transistor, apply Ohm’s

Law: V = IR to find vout.
vthB = vs * rthE = 0 Ω
ro and rthC are in parallel, so that Ohm’s
[(r1||r2)/(rs+r1||r2)] vthE = 0 V
Law becomes: vout = -IR = -(gmvBE)(ro||rthC)
Because rthC = rc||rL
vout = -(gmvBE)(ro||rc||rL)
rthB
B C vout/vBE = -gm(ro||rc||rL) is the
+ + gain from transitor input (v )
BE
vthB vBE rπ ro rthC to transistor/circuit output vout)
vout
gmvBE
- -

E E

TRANSISTOR
EXTERNAL
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 Important!
Step 5: Calculate Gain and Small Signal Parameters
rthB As previously determined:
B C

+ + vthB/vs = (r1||r2)/([r1||r2] + rs)

vthB vBE rπ ro rthC vout

gmvBE
Applying a voltage divider:
- - vBE/vthB = rπ/(rπ+rthB)
E E

G i = vout/v
Gain / s = (v
( thB/v
/ s)(v
)( BE/v
/ thB)(v
)( out/v
/ BE) Gain
G i factor:
f t
TRANSISTOR
EXTERNAL
vout/vBE = -gm(ro||rc||rL)

Because calculating the DC operating point was done first, we have equations for gm,
rπ, and ro in terms of previously calculated DC currents and voltages.

Plugging in the numbers:

Gain = vout/vs = -139 V/V

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 Interpretation/Analysis of Results Important!

Gain = vout/vs = (vthB/vs)(vBE/vthB)(vout/vBE) = -139 V/V vthB/vs = (r1||r2)/([r1||r2] + rs)

vBE/vthB = rπ/(rπ+rthB)
Both terms are loss This term is the gain factor vout/vBE = -gm(ro||rc||rL)
factors, i.e. they can and is responsible for
never be greater than 1 amplifying the signal.
signal
in magnitude and thus The AC input signal has
cause the gain to been amplified 139 times in
decrease. magnitude. The negative
sign
i indicates
i di there
h hash been
b
a phase shift of 180°.

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 Completing the Small Signal Model of the BJT
Base Charging Capacitance (Diffusion Capacitance)

In active mode when the emitter-base is forward

biased, the capacitance of the emitter-base junction
is dominated byy the diffusion capacitance
p ((not
depletion capacitance).
Recall for a diode we started out by saying:

Sum up all the Neglect charge

dQD injected from the
minority carrier C Diffusion 
dv D' base into
to the
t e
charges
h on either
ith
side of the junction dQD dt emitter due to p+

dt dv D' emitter in pnp
 vD VT   x Lp  vD VT   x Ln
' '
 
QD  qA 
p no  e 
 1 e 
dx  qA n po  e  1e dx
0 0
   

Excess charge
h stored
d iis due
d almost
l entirely
i l to the
h
charge injected from the emitter.
Georgia Tech ECE 3040 - Dr. Alan Doolittle
 Completing the Small Signal Model of the BJT
Base Charging Capacitance (Diffusion Capacitance)
•The
Th BJT actst like
lik a very efficient
ffi i t “siphon”:
“ i h ” As A majority
j it carriers
i
from the emitter are injected into the base and become “excess
minority carriers”, the Collector “siphons them” out of the base.
•We can view the collector current as the amount of excess charge
in the base collected by the collector per unit time.
•Thus,
us, we ccan eexpress
p ess thee charge
c ge due to
o thee eexcess
cess hole
oe
concentration in the base as:
Q B  iC  F
or the excess charge in the base depends on the magnitude of
current flowing and the “forward” base transport time, F, the
average time the carriers spend in the base.
•It can be shown (see Pierret section 12.2.2)
12 2 2) that:
W2
F  where,
2 DB
W  Base Quasi  neutral region width
DB  Minority carrier diffusion coefficient
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 Completing the Small Signal Model of the BJT
Base Charging Capacitance (Diffusion Capacitance)

Thus, the diffusion capacitance is,

QB  W  iC
2
CB  
Q  po int  
 Q  po int
v BE  2 DB  v BE
IC
CB   F   F gm
VT
The upper operational frequency of the transistor is limited by
the forward base transport time: 1
f 
2 F
Note the similarity to the Diode Diffusion capacitance we
found previously:
C Diffusion  g d  t where  t 
 p no 
L p  n po Ln qA
is the transit time
IS
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 Completing the Small Signal Model of the BJT
Base Charging Capacitance (Total Capacitance)

In active mode for small forward biases the depletion

capacitance of the base-emitter junction can contribute to the
total capacitance
C jEo
C jE 
V EB
1
Vbi for emitter base
where,
C jEo  zero bias depletion capaci tan ce
Vbi for emitter base  built in voltage for the E  B junction

Thus, the total emitter-base capacitance is:

C  C B  C jE

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 Completing the Small Signal Model of the BJT
Base Charging Capacitance (Depletion Capacitance)

In active mode when the collector-base is reverse biased, the

capacitance of the collector-base junction is dominated by the
depletion capacitance (not diffusion capacitance).
capacitance)

C o
C 
VCB
1
Vbi for collector base
h ,
where
C o  zero bias depletion capaci tan ce
Vbi for collector base  built in voltage for the B  C junction

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Completing the Small Signal Model of the BJT
Collector to Substrate Capacitance (Depletion Capacitance)

In some integrated circuit BJTs (lateral BJTs in particular) the

device has a capacitance to the substrate wafer it is fabricated
in This results from a “buried”
in. buried reverse biased junction.
junction Thus,
Thus
the collector-substrate junction is reverse biased and the
capacitance of the collector-substrate junction is dominated by
the depletion
p capacitance
p ((not diffusion capacitance).
p ) Emitter

C CS
C CS  p
VCS n-base
1 p-collector
Vbi for collector  substrate
n-substrate
where,
C CS  zero bias depletion capaci tan ce
Vbi for collector  substrate  built in voltage for the C  substrate junction

Georgia Tech ECE 3040 - Dr. Alan Doolittle

 Completing the Small Signal Model of the BJT
Parasitic Resistances

•rb = base resistance between metal interconnect

and B- E junction
•rrc = parasitic collector resistance
•rex = emitter resistance due to polysilicon contact
•These resistance's can be included in SPICE
sim lations but
simulations, b t are usually
s all ignored in hand
calculations.

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 Completing the Small Signal Model of the BJT
Complete Small Signal Model

Georgia Tech ECE 3040 - Dr. Alan Doolittle