FQD11P06 / FQU11P06

January 2009
®
QFET
FQD11P06 / FQU11P06
60V P-Channel MOSFET

General Description Features

These P-Channel enhancement mode power field effect • -9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology. • Low Crss ( typical 45 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand a high energy pulse in the • Improved dv/dt capability
avalanche and commutation modes. These devices are
• RoHS Compliant
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.

S
!
D
●
G! ●

▶ ▲
●

D-PAK I-PAK
G S FQD Series FQU Series
G D S
!
D

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQD11P06 / FQU11P06 Units

VDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25°C) -9.4 A
- Continuous (TC = 100°C) -5.95 A
IDM Drain Current - Pulsed (Note 1) -37.6 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) -9.4 A
EAR Repetitive Avalanche Energy (Note 1) 3.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 38 W
- Derate above 25°C 0.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 3.28 °C/W
RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)

©2009 Fairchild Semiconductor Corporation Rev. C6. January 2009

 FQD11P06 / FQU11P06
Elerical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = -60 V, VGS = 0 V -- -- -1 µA
Zero Gate Voltage Drain Current
VDS = -48 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V
RDS(on) Static Drain-Source
VGS = -10 V, ID = -4.7 A -- 0.15 0.185 Ω
On-Resistance
gFS Forward Transconductance VDS = -30 V, ID = -4.7 A (Note 4) -- 4.9 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V, -- 420 550 pF
Coss Output Capacitance f = 1.0 MHz -- 195 250 pF
Crss Reverse Transfer Capacitance -- 45 60 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 6.5 25 ns
VDD = -30 V, ID = -5.7 A,
tr Turn-On Rise Time -- 40 90 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 15 40 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 45 100 ns
Qg Total Gate Charge VDS = -48 V, ID = -11.4 A, -- 13 17 nC
Qgs Gate-Source Charge VGS = -10 V -- 2.0 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 6.3 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -9.4 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -11.4 A, -- 83 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 0.26 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2009 Fairchild Semiconductor Corporation Rev. C6,January 2009

 FQD11P06 / FQU11P06
Typical Characteristics

VGS
Top : - 15.0 V
- 10.0 V
- 8.0 V
1 1
10 - 7.0 V 10
- 6.0 V

-ID , Drain Current [A]

-ID, Drain Current [A]

- 5.5 V
- 5.0 V
Bottom : - 4.5 V
150℃

0 0
10 10 25℃

-55℃
※ Notes : ※ Notes :
1. 250µ s Pulse Test 1. VDS = -30V
2. TC = 25℃ 2. 250µ s Pulse Test

-1 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.8
Drain-Source On-Resistance

-IDR , Reverse Drain Current [A]

1
10
0.6
VGS = - 10V
RDS(on) [Ω],

0.4
VGS = - 20V
0
10

0.2
※ Notes :
150℃ 25℃ 1. VGS = 0V
※ Note : TJ = 25℃
2. 250µ s Pulse Test

0.0 -1
10
0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

1200 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000 10
-VGS, Gate-Source Voltage [V]

VDS = -30V

800 Coss 8 VDS = -48V

Capacitance [pF]

Ciss
※ Notes :
600 1. VGS = 0 V 6
2. f = 1 MHz

400 4
Crss

200 2
※ Note : ID = -11.4 A

0 0
10
-1
10
0
10
1 0 2 4 6 8 10 12 14

-VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2009 Fairchild Semiconductor Corporation Rev. C6, January 2009

 FQD11P06 / FQU11P06
Typical Characteristics (Continued)

1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
-BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = -250 µ A 1. VGS = -10 V
2. ID = -4.7 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

10
2
10 Operation in This Area
is Limited by R DS(on)
8
100 µs
-ID, Drain Current [A]

-ID, Drain Current [A]

1 1 ms
10 6
10 ms
DC
4
0
10
※ Notes :
o 2
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2
25 50 75 100 125 150

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

D = 0 .5
Zθ JC(t), Thermal Response

0
10
0 .2 ※ N o te s :
1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x .
0 .1 2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5

-1
0 .0 2
10
0 .0 1 PDM
s in g le p u ls e t1
t2

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2008 Fairchild Semiconductor Corporation Rev. C5, October 2008

 FQD11P06 / FQU11P06
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL
VDS t on t off
td(on) tr td(off)
VGS VDD tf

RG VGS
10%

-10V DUT

90%
VDS

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
tp Time
ID

RG VDD VDS (t)

VDD
ID (t)
-10V DUT
IAS
tp BVDSS

©2009 Fairchild Semiconductor Corporation Rev. C6, January 2009

 FQD11P06 / FQU11P06
Typical Characteristics (Continued)

1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
-BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = -250 µ A 1. VGS = -10 V
2. ID = -4.7 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

10
2
10 Operation in This Area
is Limited by R DS(on)
8
100 µs
-ID, Drain Current [A]

-ID, Drain Current [A]

1 1 ms
10 6
10 ms
DC
4
0
10
※ Notes :
o 2
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2
25 50 75 100 125 150

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

D = 0 .5
Zθ JC(t), Thermal Response

0
10
0 .2 ※ N o te s :
1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x .
0 .1 2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5

-1
0 .0 2
10
0 .0 1 PDM
s in g le p u ls e t1
t2

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2009 Fairchild Semiconductor Corporation Rev. C6, January 2009

 FQD11P06 / FQU11P06
Mechanical Dimensions

TO-252 (DPAK) (FS PKG Code 36)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters

Part Weight per unit (gram): 0.33

©2009 Fairchild Semiconductor Corporation Rev. C6, January 2009

 FQD11P06 / FQU11P06
Mechanical Dimensions

I - PAK

Dimensions in Millimeters

©2009 Fairchild Semiconductor Corporation Rev. C6. January 2009

 FQD11P06 / FQU11P06
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Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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make changes at any time without notice to improve the design.
.
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Rev. I37

©2009 Fairchild Semiconductor Corporation Rev. C6. January 2009