Sunteți pe pagina 1din 16

Introduction to VLSI Design, VLSI I, Fall 2010

3. Implementing Logic in CMOS 1

mm 40 60 80 100 120

40
3. Implementing Logic in CMOS

J. A. Abraham

Department
60 of Electrical and Computer Engineering
The University of Texas at Austin
EE 382M, VLSI I
Fall 2010
80
September 13, 2010

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 1 / 30

Static CMOS Circuits

N- and P-channel Networks


mm 40 60 implement80logic functions
100 120
N- and P-channel networks
Each network connected between Output and VDD or VSS
Function defines path between the terminals

40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 1 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 2

Duality in CMOS Networks


Straightforward way of constructing static CMOS circuits is to
implement
mm dual N- 40and P- networks
60 80 100 120
N- and P- networks must implement complementary
functions
Duality sufficient for correct operation (but not necessary)
40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 2 / 30

Constructing Complex Gates

mm F = (A40
Example: · B) + (C · 60
D) 80 100 120
1 Take uninverted function F = (A · B) + (C · D) and derive
N-network
2 Identify AN D, OR components: F is OR of AB, CD
40
3 Make connections of transistors

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 3 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 3

Construction of Complex Gates, Cont’d

4 Construct P-network
mm 40 by 60 80 100
10 120
12
taking complement of
N-expression (AB + CD),
which gives the
expression,
40
(A + B) · (C + D)
5 Combine P and N circuits

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 4 / 30

Layout of Complex Gate

mm 40 60 80 100 120
AND-OR-INVERT (AOI) gate

40

60

Note: Arbitrary shapes are not


80 allowed in some nanoscale
design rules
ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 5 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 4

Example of Compound Gate

F = (A + B + C) · D)
mm 40 60 80 1000
10 120
12
Note:
N- and P- graphs are duals of each
other
40
In this case, the function is the
complement of the switching
function between F and GND
60
Question: Does it make any
difference to the function if the
transistor with input D is connected
between the parallel A, B, C,
80
transistors and GND?
What about the electrical behavior?
ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 6 / 30

Example of More Complex Gate

mm 40 60 80 100 120

40

60

80

OU T = (A + B) · (C + D) · (E + F + (G · H))
ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 7 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 5

Exclusive-NOR Gate in CMOS

mm 40 60 80 100 120

40

60

Note:80designs such as these should be checked very carefully for


correct behavior using circuit simulation

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 8 / 30

Pseudo nMOS Logic


Based on the old NMOS technology where a “depletion” transistor
was used as a pullup resistor
mm 40 60 80 100 120
What happens when there is no path from Z to ground (i.e., Z =
1)?
What happens when there is a path from Z to ground (i.e., Z = 0)?
40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 9 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 6

Duality is Not Necessary for a CMOS Structure


Functions realized by N and P networks must be complementary,
and one of them must conduct for every input combination
mm 40 60 80 100 120

40

F = a·b+a·b+a·c+c·d+a·b

60 The N and P networks are


NOT duals, but the switching
functions they implement
are complementary
80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 10 / 30

Example of Complex CMOS Gate

mm 40 60 80 100 120

40 F=

G=
60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 11 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 7

Signal Strength

mm 40 60 80 100 120
Voltages represent digital logic values
Strength of signal:
How close it approximates ideal voltage
V40DD and GN D rails are strongest 1 and 0
nMOS transistors pass a strong 0
But degraded or weak 1
pMOS transistors pass a strong 1
60 But degraded or weak 0

Therefore, nMOS transistors are best for the “pull-down”


network
80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 12 / 30

Pass Transistors and Transmission Gates


Transistors can be used as switches; however, they could produce
degraded outputs
mm 40 60 80 100 120

40

Transmission gates pass both 0 and 1 well


60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 13 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 8

Pass Transistor Logic

mm 40 60 80 1000
10 120

40
“Pull-Up” Circuit
Used to restore degraded logic 1 from output of nMOS pass
transistor
60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 14 / 30

Pass Transistor Logic – Better Layout

Group
mm 40
similar transistors, 60 can be in80the same well
so they 100 120

40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 15 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 9

Tristates

Tristate Buffer produces Z (high impedance) when not enabled


mm 40 60 80 100 120
EN A Y
0 0 Z
0 1 Z
1 400 0
1 1 1

60
Non-Restoring Tristate
Transmission gate acts as a tristate buffer
Only two transistors, but nonrestoring
Noise
80 on A is passed to Y

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 16 / 30

Tristate Inverter

Tristate inverter produces restored output, but complements signal


mm 40 60 80 100 120

 


40 
  


 

60   

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 17 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 10

Multiplexers

mm 40 60 80 100 120

S D1 D0 Y
0 X 0 0
0 X 1 1
40
1 0 X 0
1 1 X 1

60

How many transistors are needed?


80 (The better design uses 3 NAND
gates and 1 inverter)

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 18 / 30

Transmission Gate MUX

Nonrestoring
mm MUX40 60 80 100 120
Uses two transmission
gates =⇒ only 4
transistors
40
Inverting MUX – adds an inverter
Uses compound gate AOI22
Alternatively, a pair of tristate inverters (same thing)
60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 19 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 11

4:1 Multiplexer

A 4:1 MUX chooses one of 4 inputs using two selects


mm 40 60 80 100 120
Two levels of 2:1 MUXes
Alternatively, four tristates

40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 20 / 30

D Latch

Basicmm
Memory Element
40 60 80 100 120
When CLK = 1, latch is transparent
D flows through to Q like a buffer
When CLK = 0, the latch is opaque
40 Q holds its old value independent of D
a.k.a., transparent latch or level-sensitive latch

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 21 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 12

D Latch, Cont’d

mm
D Latch Design: 40 60 80 100 120
MUX chooses
between D and
old Q
40

60

D Latch
80
Operation

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 22 / 30

D Flip-Flop (D-Flop)

Another common storage element


mm 40 D is copied
When CLK rises, 60 to Q 80 100 120
At all other times, Q holds its value
positive edge-triggered flip-flop or master-slave flip-flop
Built
40 from “master” and “slave” D latches

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 23 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 13

D Flip-Flop Operation

mm 40 60 80 100 120

40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 24 / 30

Race Condition – Hold Time Failure

mm 40 60 80 100 120
Back-to-back flops can malfunction from clock skew
Second flip-flop fires late
Sees first flip-flop change and captures its result
40
Called hold-time failure or race condition

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 25 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 14

Non-Overlapping Clocks

A simple way to prevent races


This works as40long as non-overlap
mm 60 80 clock skew
exceeds 100 120
Used in safe (conservative) designs
Industry does not generally use this approach – managing
skew more carefully instead
40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 26 / 30

Gate Layout

Building a library of standard cells


mm 40 60 80 100 120
Layout can be time consuming
One solution is to have layouts of commonly used functions
(Inverter, NAND, OR, MUX, etc.), designed to fit together
very
40 well

Standard cell design methodology


VDD and GN D should abut (standard height)
60
Adjacent gates should satisfy design rules
nMOS at bottom and pMOS at top
All gates include well and substrate contacts
One of the large industry suppliers is ARM (which purchased
80
ARTISAN)

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 27 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 15

Examples of Standard Cell Layout


NAND3
Inverter
mm 40 60 80 100 120

40

60

Horizontal N-diffusion and P-diffusion strips


80 Polysilicon gates
Vertical
Metal1 VDD rail at top, Metal1 GN D rail at bottom
32λ by 40λ
ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 28 / 30

Wiring Tracks and Well Spacing

mmTrack is the
Wiring 40 space 60 Example,
80 well spacing:
100 wells 120
required for a wire must surround transistors by
Example, 4λ width, 4λ spacing 6λ
from neighbor = 8λ pitch Implies 12λ between opposite
Transistors
40
also consume one transistor flavors
wiring track Leaves room for one wire track

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 29 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010
Introduction to VLSI Design, VLSI I, Fall 2010
3. Implementing Logic in CMOS 16

Example of Area Estimation

Estimate
mmarea by counting
40 60 Estimating80area of O3AI
100 120
wiring tracks Sketch a stick diagram and estimate
Multiply by 8 to express in λ area

40

60

80

ECE Department, University of Texas at Austin Lecture 3. Implementing Logic in CMOS J. A. Abraham, September 13, 2010 30 / 30

Department of Electrical and Computer Engineering, The University of Texas at Austin


J. A. Abraham, September 13, 2010

S-ar putea să vă placă și