Sunteți pe pagina 1din 7

Agilent HCPL-817

Phototransistor Optocoupler
High Density Mounting Type
Data Sheet

Features
• Current Transfer Ratio
(CTR: min. 50% at IF = 5 mA,
VCE = 5 V)
• High input-output isolation voltage
Description Ordering Information
(Viso = 5000 Vrms)
The HCPL-817 contains a light Specify part number followed by
emitting diode optically coupled to Option Number (if desired). • Response time (tr: typ., 4 µs at
a phototransistor. It is packaged in VCE = 2 V, IC = 2 mA, RL = 100 Ω)
a 4-pin DIP package and available HCPL-817-XXX • Compact dual-in-line package
in wide-lead spacing option and • UL approved
lead bend SMD option. Input-output Option Number • CSA approved
isolation voltage is 5000 Vrms. • VDE approved
Response time, tr, is typically 4 µs 060 = VDE0884 Option
• Options available:
and minimum CTR is 50% at input W00 = 0.4" Lead Spacing Option
– Leads with 0.4" (10.16 mm)
current of 5 mA. 300 = Lead Bend SMD Option
spacing (W00)
500 = Tape and Reel Packaging
– Leads bends for surface
Option
mounting (300)
00A = Rank Mark A
00B = Rank Mark B – Tape and reel for SMD (500)
Functional Diagram 00C = Rank Mark C – VDE 0884 approvals (060)
00D = Rank Mark D
PIN NO. AND INTERNAL 00L = Rank Mark L Applications
CONNECTION DIAGRAM
• Signal transmission between
4 3
circuits of different potentials and
impedances
• I/O interfaces for computers
Schematic • Feedback circuit in power supply
1 IF IC 4
ANODE COLLECTOR
+

VF

1 2 – 3
CATHODE EMITTER
1. ANODE 3. EMITTER
2
2. CATHODE 4. COLLECTOR

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
4.6 ± 0.5 7.62 ± 0.3
(0.181) (0.3)
4 3

TYPE NUMBER
OPTION CODE 3.5 ± 0.5
FOR OPTION 060 (0.138)
A 817 V ONLY
DATE CODE 6.5 ± 0.5
YWW (0.256)
0.5
TYP.
2.8 ± 0.5 3.3 ± 0.5 (0.02)
PIN ONE DOT RANK MARK (0.130)
(0.110)

1 2
0.5 ± 0.1 0.35 +0.15/-0.10
(0.02) (0.014)
DIMENSIONS IN MILLIMETERS AND (INCHES) 7.62 ~ 9.98
2.54 ± 0.25
(0.1)

Package Outline – Option W00

4.6 ± 0.5 7.62 ± 0.3


(0.181) (0.3)

3.5 ± 0.5
(0.138)
6.5 ± 0.5 6.9 ± 0.5
(0.256) (0.272)

2.8 ± 0.5 2.3 ± 0.5


(0.09) 0.35 +0.15/-0.10
(0.110)
(0.014)

0.5 ± 0.1 10.16 ± 0.5


(0.02) (0.4)

2.54 ± 0.25
(0.1)

DIMENSIONS IN MILLIMETERS AND (INCHES)

Package Outline – Option 300

4.6 ± 0.5 7.62 ± 0.3


(0.181) (0.3)

3.5 ± 0.5
(0.138) 0.35 ± 0.25
(0.014)
6.5 ± 0.5
(0.256)

1.2 ± 0.1 0.35 ± 0.25 1.0 ± 0.25


(0.047) (0.014) (0.039)

2.54 ± 0.25 10.16 ± 0.3


(0.1) (0.4)

DIMENSIONS IN MILLIMETERS AND (INCHES)

2
Absolute Maximum Ratings (TA = 25˚C)
Storage Temperature, TS –55˚C to +125˚C
Operating Temperature, T A –30˚C to +100˚C
Lead Solder Temperature, max. 260˚C for 10 s
(1.6 mm below seating plane)
Average Forward Current, IF 50 mA
Reverse Input Voltage, VR 6V
Input Power Dissipation, PI 70 mW
Collector Current, IC 50 mA
Collector-Emitter Voltage, V CEO 35 V
Emitter-Collector Voltage, V ECO 6V
Collector Power Dissipation 150 mW
Total Power Dissipation 200 mW
Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 5000 Vrms

Electrical Specifications (TA = 25˚C)


Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF – 1.2 1.4 V IF = 20 mA
Reverse Current IR – – 10 µA VR = 4 V
Terminal Capacitance Ct – 30 250 pF V = 0, f = 1 KHz
Collector Dark Current ICEO – – 100 nA VCE = 20 V
Collector-Emitter Breakdown Voltage BVCEO 35 – – V IC = 0.1 mA
Emitter-Collector Breakdown Voltage BVECO 6 – – V IE = 10 µA
Collector Current IC 2.5 – 30 mA IF = 5 mA, VCE = 5 V,
*Current Transfer Ratio CTR 50 – 600 % RBE = ∞
Collector-Emitter Saturation Voltage VCE(sat) – 0.1 0.2 V IF = 20 mA, IC = 1 mA
Response Time (Rise) tr – 4 18 µs VCC = 2 V, IC = 2 mA
Response Time (Fall) tf – 3 18 µs RL = 100 Ω
Cut-off Frequency fc – 80 – KHz VCC = 5 V, IC = 2 mA
RL = 100 Ω, –3 dB
Isolation Resistance Riso 5 x 1010 1 x 1011 – Ω DC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf – 0.6 1.0 pF V = 0, f = 1 MHz

IC
* CTR = x 100%
IF

Rank Mark CTR (%) Conditions


L 50 ~ 100 IF = 5 mA, VCE = 5 V, TA = 25°C
A 80 ~ 160
B 130 ~ 260
C 200 ~ 400
D 300 ~ 600

3
PC – COLLECTOR POWER DISSIPATION – mW
60 200 6
TA = 25°C

VCE(SAT.) – COLLECTOR-EMITTER
IF – FORWARD CURRENT – mA

SATURATION VOLTAGE – V
50 5 IC = 0.5 mA
150
IC = 1 mA
40 4
IC = 3 mA
30 100 3 IC = 6 mA
IC = 7 mA
20 2
50
10 1

0 0 0
-30 0 25 50 75 100 125 -30 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20
TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C IF – FORWARD CURRENT – mA

Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs. Figure 3. Collector-emitter saturation voltage
temperature. vs. forward current.
CTR – CURRENT TRANSFER RATIO – %

200 50
500 VCE = 5 V

IC – COLLECTOR CURRENT – mA
TA = 75°C 180 TA = 25°C
IF – FORWARD CURRENT – mA

TA = 25°C IF = 30 mA
200 TA = 50°C TA = 0°C 160 40
IF = 20 mA
100 TA = 25°C TA = -25°C 140 PC (MAX.)
50 120 30
IF = 20 mA
100
20
80 20 IF = 10 mA
10
60
5 IF = 10 mA
40 10

2 20
IF = 5 mA
1 0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 5 10 20 50 0 1 2 3 4 5 6 7 8 9
VF – FORWARD VOLTAGE – V IF – FORWARD CURRENT – mA VCE – COLLECTOR-EMITTER VOLTAGE – V

Figure 4. Forward current vs. forward voltage. Figure 5. Current transfer ratio vs. forward Figure 6. Collector current vs. collector-
current. emitter voltage.
RELATIVE CURRENT TRANSFER RATIO – %

ICEO – COLLECTOR DARK CURRENT – A

150 0.16 10-5


IF = 20 mA
VCE(SAT.) – COLLECTOR-EMITTER

IF = 5 mA
VCE = 5 V 0.14 IC = 1 mA VCE = 20 V
SATURATION VOLTAGE – V

10-6
0.12
100 10-7
0.10

0.08 10-8

0.06
50 10-9
0.04
10-10
0.02

0 0 10-11
-30 0 25 50 75 100 -25 0 25 50 75 100 -25 0 25 50 75 100
TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C

Figure 7. Relative current transfer ratio vs. Figure 8. Collector-emitter saturation Figure 9. Collector dark current vs.
temperature. voltage vs. temperature. temperature.

4
500
VCE = 2 V VCE = 2 V
200 IC = 2 mA IC = 2 mA
100 0 TA = 25°C

VOLTAGE GAIN AV – dB
TA = 25°C
RESPONSE TIME – µs

50 tr
20
tf
10
RL = 10 kΩ
5 td 10

2 ts RL = 1 kΩ
1
RL = 100 Ω
0.5
20
0.2
0.1
0.05 0.1 0.2 0.5 1 2 5 10 0.5 1 2 5 10 20 50 100 200 500
RL – LOAD RESISTANCE – kΩ f – FREQUENCY – kHz

Figure 10. Response time vs. load resistance. Figure 11. Frequency response.

Test Circuit for Response Time Test Circuit for Frequency Response

VCC VCC

RL RL
RD RD
INPUT
OUTPUT OUTPUT

INPUT

OUTPUT 10%

90%

td ts

tr tf

5
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
October 19, 2001
5988-4116EN
This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.