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Tip 122 127
Tip 122 127
NPN
Plastic Medium-Power TIP120 *
Complementary Silicon Transistors TIP121*
. . . designed for general–purpose amplifier and low–speed
TIP122 *
switching applications. PNP
• High DC Current Gain — TIP125 *
hFE = 2500 (Typ) @ IC
= 4.0 Adc TIP126 *
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125
= 80 Vdc (Min) — TIP121, TIP126
TIP127 *
*ON Semiconductor Preferred Device
= 100 Vdc (Min) — TIP122, TIP127
• Low Collector–Emitter Saturation Voltage — DARLINGTON
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc 5 AMPERE
= 4.0 Vdc (Max) @ IC = 5.0 Adc COMPLEMENTARY SILICON
POWER TRANSISTORS
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors 60–80–100 VOLTS
• TO–220AB Compact Package 65 WATTS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
*MAXIMUM RATINGS
TIP120, TIP121, TIP122,
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Voltage
Symbol
VCEO
TIP125
60
TIP126
80
TIP127
100
Unit
Vdc 4
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ ÎÎÎ
ÎÎÎÎ
Collector–Base Voltage VCB 60 80 100 Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Collector Current — Continuous IC 5.0 Adc STYLE 1:
Peak 8.0 PIN 1. BASE
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
2. COLLECTOR
Base Current IB 120 mAdc 1 3. EMITTER
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
2 4. COLLECTOR
Total Power Dissipation @ TC = 25C PD 65 Watts 3
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Derate above 25C 0.52 W/C CASE 221A–09
Total Power Dissipation @ TA = 25C PD 2.0 Watts TO–220AB
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Derate above 25C
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Unclamped Inductive Load Energy (1) E
0.016
50
W/C
mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
Operating and Storage Junction, TJ, Tstg –65 to +150 C
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.92 C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Thermal Resistance, Junction to Ambient RθJA 62.5 C/W
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
TA TC
4.0 80
TC
2.0 40
TA
1.0 20
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
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2
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 100 mAdc, IB = 0) TIP120, TIP125 60 —
TIP121, TIP126
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
80 —
TIP122, TIP127 100 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP120, TIP125
ICEO
— 0.5
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, IB = 0) TIP121, TIP126 — 0.5
(VCE = 50 Vdc, IB = 0) TIP122, TIP127 — 0.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCB = 60 Vdc, IE = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ TIP120, TIP125
ICBO
— 0.2
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 80 Vdc, IE = 0) TIP121, TIP126 — 0.2
(VCB = 100 Vdc, IE = 0) TIP122, TIP127 — 0.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(VBE = 5.0 Vdc, IC = 0) ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
IEBO — 2.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
1000 —
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
1000 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 3.0 Adc, IB = 12 mAdc) — 2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 5.0 Adc, IB = 20 mAdc) — 4.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on) — 2.5 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Small–Signal Current Gain hfe 4.0 — —
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
Cob
— 300
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP120, TIP121, TIP122 — 200
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
5.0
CC V ts PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V 3.0 NPN
D1 MUST BE FAST RECOVERY TYPE, eg: 2.0
1N5825 USED ABOVE IB ≈ 100 mA RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE tf
TUT 1.0
t, TIME (s)
V2 RB 0.7
µ
approx
+8.0 V 0.5
D1 ≈ 8.0 k ≈ 120
51 0.3
0
0.2 tr
V1 VCC = 30 V
approx +4.0 V
IC/IB = 250
-12 V 25 µs IB1 = IB2
for td and tr, D1 is disconnected 0.1
and V2 = 0
0.07 TJ = 25°C
tr, tf ≤ 10 ns For NPN test circuit reverse all polarities. td @ VBE(off) = 0
DUTY CYCLE = 1.0% 0.05
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
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TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
1.0
r(t), TRANSIENT THERMAL RESISTANCE 0.7
D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
10,000 300
5000 TJ = 25°C
h fe , SMALL-SIGNAL CURRENT GAIN
3000 200
2000
C, CAPACITANCE (pF)
1000
500 Cob
TC = 25°C 100
300 VCE = 4.0 Vdc
200
IC = 3.0 Adc
100 70 Cib
50 50 PNP
30 PNP
20 NPN
NPN
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
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TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
NPN PNP
TIP120, TIP121, TIP122 TIP125, TIP126, TIP127
20,000 20,000
VCE = 4.0 V VCE = 4.0 V
10,000 10,000
7000
hFE , DC CURRENT GAIN
300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0 3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.2 2.2
1.8 1.8
1.4 1.4
1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0 2.0
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5
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
STYLE 1:
N PIN 1. BASE V 0.045 --- 1.15 ---
2. COLLECTOR Z --- 0.080 --- 2.04
3. EMITTER
4. COLLECTOR
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6
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
Notes
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7
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
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8
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