Transistors

2SC2377
Silicon NPN epitaxial planar type

For high-frequency amplification Unit: mm

6.9±0.1 2.5±0.1
(1.0)
■ Features (1.5)

(0.4)

(1.0)
(1.5)
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT

3.5±0.1

4.5±0.1
R 0.9
• M type package allowing easy automatic and manual insertion R 0.7

2.0±0.2
as well as stand-alone fixing to the printed circuit board

4.1±0.2
2.4±0.2
1.0±0.1
■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.45±0.05
0.55±0.1

1.25±0.05
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V 3 2 1
1: Base
(2.5) (2.5)
Emitter-base voltage (Collector open) VEBO 3 V 2: Collector
3: Emitter
Collector current IC 15 mA
M-A1 Package
Collector power dissipation PC 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCB = 6 V, IE = −1 mA 720 mV
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 100 nA
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0 10 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 3 V, IC = 0 1 µA
Forward current transfer ratio * hFE VCB = 6 V, IE = −1 mA 65 260 
Transition frequency fT VCB = 6 V, IE = −1 mA, f = 100 MHz 450 650 MHz
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 5.0 dB
Power gain GP VCB = 6 V, IE = −1 mA, f = 100 MHz 20 24 dB
Reverse transfer capacitance Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank C D
hFE 65 to 160 100 to 260

Publication date: January 2003 SJC00113BED 1

2SC2377

PC  Ta IC  VCE IC  I B
250 12 12
Ta = 25°C Ta = 25°C
Collector power dissipation PC (mW)

IB = 100 µA
10 10
200 VCE = 10 V

Collector current IC (mA)

Collector current IC (mA)
80 µA 6V
8 8
150
60 µA
6 6

100
40 µA
4 4

50 20 µA
2 2

0 0 0
0 20 40 60 80 100 120 140 160 0 4 8 12 16 0 40 80 120 160
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (µA)

IC  VBE VCE(sat)  IC hFE  IC

30 100 360
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 6 V VCE = 6 V

25°C
25 300

Forward current transfer ratio hFE

Collector current IC (mA)

10
Ta = 75°C −25°C
20 240

Ta = 75°C
15 1 180
25°C

−25°C
10 120
25°C Ta = 75°C
0.1
5 −25°C 60

0 0.01 0
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 0.1 1 10 100
Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA)

fT  I E Zrb  IE Cre  VCE

1 200 120 2.4
Ta = 25°C IC = 1 mA
f = 2 MHz f = 10.7 MHz
Ta = 25°C Ta = 25°C
Cre (pF)
Reverse transfer impedance Zrb (Ω)

1 000 100 2.0

Transition frequency fT (MHz)

VCB = 10 V
Reverse transfer capacitance

800 80 1.6
6V

1.2
(Common emitter)

600 60

400 40 0.8

200 20 VCE = 6 V 0.4

10 V
0 0 0
− 0.1 −1 −10 −100 − 0.1 −1 −10 0.1 1 10 100
Emitter current IE (mA) Emitter current IE (mA) Collector-emitter voltage VCE (V)

2 SJC00113BED
 2SC2377

Cob  VCB GP  IE NF  IE
1.2 40 12
IE = 0 f = 100 MHz
C (pF)

f = 100 MHz
f = 1 MHz Rg = 50 Ω Rg = 50 kΩ
Ta = 25°C 35 Ta = 25°C Ta = 25°C
(Common base, input open circuited) ob

1.0 10
30
VCE = 10 V

Noise figure NF (dB)

Power gain GP (dB)
0.8 8
25 6V
Collector output capacitance

0.6 20 6

15
0.4 4 VCE = 6 V, 10 V

10
0.2 2
5

0 0 0
0 5 10 15 20 25 30 − 0.1 −1 −10 −100 − 0.1 −1 −10 −100
Collector-base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA)

bie  gie bre  gre bfe  gfe

20 0 0
yie = gie + jbie 150 10.7 10.7
yre = gre + jbre − 0.4 mA 25
VCE = 10 V −4 mA 25
18
−7 mA VCE = 10 V −1 mA 58

Forward transfer susceptance bfe (mS)

Reverse transfer susceptance bre (mS)

100
100 −1 −20
16 −1 mA 150
−4 mA
Input susceptance bie (mS)

−2 mA IE = −7 mA −2 mA
14
100 −2 −40 −4 mA
58 150 100
12
f = 150 MHz 58
58
−60
IE = − 0.5 mA

10 −1 mA −3
IE = −7 mA
8 100
58 −4 100 −80
6
25
4 25 −5 −100
2 yfe = gfe + jbfe
f = 10.7 MHz VCE = 10 V
f = 150 MHz
0 −6 −120
0 3 6 9 12 15 − 0.5 − 0.4 − 0.3 − 0.2 − 0.1 0 0 20 40 60 80 100
Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS)

boe  goe
1.2
−1 mA
IE = − 0.5 mA

150
−2 mA
1.0
−4 mA
Output susceptance boe (mS)

100

0.8
−7 mA

0.6
58

0.4
25
0.2
f = 10.7 MHz yoe = goe + jboe
VCE = 10 V
0
0 0.1 0.2 0.3 0.4 0.5
Output conductance goe (mS)

SJC00113BED 3
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2002 JUL
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