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DISCRETE SEMICONDUCTORS

DATA SHEET

BLY89C
VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification

VHF power transistor BLY89C

DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V. It has a
3/8" capstan envelope with a ceramic
cap. All leads are isolated from the
stud.

QUICK REFERENCE DATA


R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit

MODE OF OPERATION VCC f PL Gp η zi YL


V MHz W dB % Ω mS
c.w. 13,5 175 25 >6 >70 1,6 + j1,4 210 + j5,5

PIN CONFIGURATION PINNING - SOT120

PIN DESCRIPTION

halfpage
1 collector
4
2 emitter
3 base
1 3 c 4 emitter
handbook, halfpage

MBB012 e

2
MSB056

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2
Philips Semiconductors Product specification

VHF power transistor BLY89C

RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value VCESM max 36 V
Collector-emitter voltage (open base) VCEO max 18 V
Emitter-base voltage (open collector) VEBO max 4 V
Collector current (average) IC(AV) max 6 A
Collector current (peak value); f > 1 MHz ICM max 12 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf max 73 W

MGP864 MGP865
10 80
handbook, halfpage
handbook, halfpage

Prf ΙΙΙ
IC
(W)
(A)

60 derate by
0.38 W/K
Th = 70 °C Tmb = 25 °C ΙΙ

derate by
0.29 W/K
40

1 20
1 10 102 0 50 100
VCE (V) Th (°C)

I Continuous d.c. operation


II Continuous r.f. operation
III Short-time operation during mismatch

Fig.2 D.C. soar. Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz.

THERMAL RESISTANCE
(dissipation 20 W; Tmb = 79 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 3,1 K/W
From junction to mounting base (r.f. dissipation) Rth j-mb(rf) = 2,3 K/W
From mounting base to heatsink Rth mb-h = 0,45 K/W

August 1986 3
Philips Semiconductors Product specification

VHF power transistor BLY89C

CHARACTERISTICS
Tj = 25 °C

Breakdown voltage
Collector-emitter voltage
VBE = 0; IC = 25 mA V(BR)CES > 36 V
Collector-emitter voltage
open base; IC = 50 mA V(BR)CEO > 18 V
Emitter-base voltage
open collector; IE = 10 mA V(BR)EBO > 4 V
Collector cut-off current
VBE = 0; VCE = 18 V ICES < 10 mA
Transient energy
L = 25 mH; f = 50 Hz
open base E > 8 ms
−VBE = 1,5 V; RBE = 33 Ω E > 8 ms
D.C. current gain(1)
typ 50
IC = 2,5 A; VCE = 5 V hFE
10 to 80
Collector-emitter saturation voltage(1)
IC = 7,5 A; IB = 1,5 A VCEsat typ 1,7 V
Transition frequency at f = 100 MHz(1)
IC = 2,5 A; VCE = 13,5 V fT typ 800 MHz
IC = 7,5 A; VCE = 13,5 V fT typ 750 MHz
Collector capacitance at f = 1 MHz
typ 65 pF
IE = Ie = 0; VCB = 15 V Cc
< 90 pF
Feedback capacitance at f = 1 MHz
IC = 100 mA; VCE = 15 V Cre typ 41 pF
Collector-stud capacitance Ccs typ 2 pF

Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.

August 1986 4
Philips Semiconductors Product specification

VHF power transistor BLY89C

MGP866 MGP867
75 200
handbook, halfpage typical values Tj = 25 °C handbook, halfpage IE = Ie = 0
f = 1 MHz
hFE VCE = 13.5 V
Cc
(pF)
5V
50

100
typ

25

0 0
0 5 10 IC (A) 15 0 10 VCB (V) 20

Fig.4 Fig.5

MGP868
1000
handbook, full pagewidth
VCE = 13.5 V
f = 100 MHz
Tj = 25 °C
typ
fT
(MHz)

500

0
0 5 10 IC (A) 15

Fig.6

August 1986 5
Philips Semiconductors Product specification

VHF power transistor BLY89C

APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C

f (MHz) VCC (V) PL(W) PS(W) Gp (dB) IC (A) η (%) zi (Ω) YL (mS)
175 13,5 25 < 6,25 > 6 < 2,64 > 70 1,6 + j1,4 210 + j5,5
175 12,5 25 − typ 6,6 − typ 75 − −

,,
handbook, full pagewidth

,, ,,
C6a
L5 L7 C7
C3a
50 Ω
C1 L1 L4
50 Ω T.U.T. C6b C8
C2 L6
L2 C3b
C4
C5 R2
R1 L3

L8

+VCC MGP604

Fig.7 Test circuit for 175 MHz.

List of components:
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 1 turn enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω (±10%) carbon resistor
R2 = 4,7 Ω (±5%) carbon resistor

August 1986 6
Philips Semiconductors Product specification

VHF power transistor BLY89C

150

handbook, full pagewidth

72

L3 L8
+VCC
C4
R1 C5 R2

L2 C3a
L6 C6a
L1
C1 C2 C7
L4 L5
C8
L7
C6b
C3b

rivet

MGP808

Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.

The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.

August 1986 7
Philips Semiconductors Product specification

VHF power transistor BLY89C

MGP869 MGP870
50 15 150
handbook, halfpage f = 175 MHz VCC = 13.5 V handbook, halfpage f = 175 MHz VCC = 13.5 V
Th = 25 °C
typical values VCC = 12.5 V VCC = 12.5 V
Gp typical values η
(dB) (%)
PL
Th = 25 °C
(W)
10 100
Gp

25
Th = 70 °C

5 η 50

0 0 0
0 5 10 PS (W) 15 0 20 PL (W) 40

Fig.9 Fig.10

Conditions for R.F. SOAR


f = 175 MHz
Th = 70 °C
Rth mb-h = 0,45 K/W
MGP871
40 VCCnom = 13,5 V
handbook, halfpage
PLnom PS = PSnom at VCCnom = 13,5 V and VSWR = 1
(W)
VSWR = 1
The transistor has been developed for use with
30 VSWR = unstabilized supply voltages. As the output power and
10 drive power increase with the supply voltage, the nominal
50
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
20
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
10 parameter.

PS The graph applies to the situation in which the drive


PSnom (PS/PSnom) increases linearly with supply over-voltage
0 ratio.
1 1.1 1.2 VCC 1.3
VCCnom

Fig.11 R.F. soar.

August 1986 8
Philips Semiconductors Product specification

VHF power transistor BLY89C

OPERATING NOTE
Below 50 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be 20
MGP872
handbook, halfpage power gain versus frequency
effective for r.f. only. Gp (class-B operation)
(dB)

15

10

0
0 100 200 f (MHz) 300

VCC = 13,5 V
PL = 25 W
Th = 25 °C
typical values

Fig.12

MGP873 MGP874
5 10 500
handbook, halfpage
input impedance (series components) load impedance (parallel components)
handbook, halfpage
versus frequency (class-B operation) RL versus frequency (class-B operation) CL
(Ω) (pF)
ri, xi ri
xi 7.5 250
(Ω)
RL
ri
CL
0 5 0
RL

xi CL
2.5 −250

−5 0 −500
0 100 200 300 0 100 200 f (MHz) 300
f (MHz)

VCC = 13,5 V VCC = 13,5 V


PL = 25 W PL = 25 W
Th = 25 °C Th = 25 °C
typical values typical values

Fig.13 Fig.14

August 1986 9
Philips Semiconductors Product specification

VHF power transistor BLY89C

PACKAGE OUTLINE

Studded ceramic package; 4 leads SOT120A

A
Q c

D1 A
N1
D2 w1 M A M W
N

N3

M1
X

H
detail X
b

4
L

0 5 10 mm
scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 D2 H L M M1 N N1 N3 Q W w1

5.97 5.90 0.18 9.73 8.39 9.66 27.44 9.00 3.41 1.66 12.83 1.60 3.31 4.35
mm 0.38
4.74 5.48 0.14 9.47 8.12 9.39 25.78 8.00 2.92 1.39 11.17 0.00 2.54 3.98 8-32
0.232 0.007 0.383 0.330 0.380 1.080 0.065 0.505 0.063 UNC
inches 0.283 0.354 0.134 0.130 0.171
0.015
0.248 0.216 0.004 0.373 0.320 0.370 1.015 0.315 0.115 0.055 0.440 0.000 0.100 0.157

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT120A 97-06-28

August 1986 10
Philips Semiconductors Product specification

VHF power transistor BLY89C

DEFINITIONS

Data Sheet Status


Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11
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