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ANALOG ELECTRONICS
1. If the energy gap of semiconductor is 1.1
eV, then it would be
a. Opaque to the visible light
b. Transparent to the visible light
c. Transparent to the ultraviolet radiation
d. Opaque to the infrared radiation
2. with increasing temperature, the electrical
conductivity would
a. Increase in metals as well as in
intrinsic semiconductors
b. Increase in metals but decrease in
intrinsic semiconductors
c. Decrease in metals but increase in
intrinsic semiconductors
d. Decrease in metals as well as in
intrinsic semiconductors
3. An air-cored inductance is a
a. Linear circuit element because its
reactancevarieslinearlywith
frequency
b. Linear circuit element because its
current varies linearly with voltage at
a fixed frequency
c. Non-linear circuit element in view of
the possible magnetic saturation of the
air core
d. Non-linear circuit element in view of
the equation v = l (di/dt) involving
differentiation
4. Of the various capacitances associated
with a junction transistor, the gain-band
width product is affected to a maximum
extent by
ANAL OG SYSTEMS
a. Base-collector parasitic capacitance
b. Base-collector space charge layer
capacitance
c. Base-emitter space charge layer
capacitance
d. Base-emitter diffusion capacitance
5.The modulation of effective base width by
collector voltage is known as Early Effect.
Hence reverse collector voltage
a. Increases both alpha and beta
b. Decrease both alpha and beta
c. Increases alpha but decreases beta
d. Decreases beta but increases alpha
6. The ON voltage and forward break over
voltage of an SCR depend on the
a. Gate current alone
b. Band gap of the semiconductor alone
c. Gate current and the semiconductor
band gap respectively
d. Semiconductor band gap and the gate
current respectively
7. An N-channel JFET has IDs
a. Maximum for VGS = 0, and maximum
for VGS = negative and large
b. Minimum for VGS = 0, and maximum
for VGS = negative and large
c. Maximum for VGS = 0, and minimum
for VGS = positive and large
d. Minimum for VGS = 0, and maximum
for VGS = positive and large
8. Which of the following characteristics of a
silicon p-n junction diode make it suitable
for use as an ideal diode?
1. It has very low saturation current.
2. It has a high value of forward cut-in
TECHNICAL QUESTION BANK
voltage
3. It can withstand large reverse voltage.
4. When compared with germanium
diodes, silicon diodes show a lower
degree of temperature dependence
under reverse bise conditions.
Select the correct answer using the codes
given below:
a. 1 and 2
b. 1,2,3 and 4
c. 2,3 and 4
d. 1 And 3
9. An incremental model of a solid state
device is one which represents the
a. A property of the device at the desired
operating point
b. Dc property of the device at all
operating points
c. Complete ac and dc behavior of the
device at all operating points
d. Ac property of the device at all
operating points
c.
10. The threshold voltage of a MOSFET can
be lowered by
1. Using a thinner gate oxide.
2. Reducing the substrate concentration.
3. Increasing the substrate concentration.
a. 3 alone is correct
b. 1 and 2 are correct
c. 1 and 3 are correct
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d. 2 alone is correct
11. Which one of the following statements
regarding the two-transistor model of the
p-n-p-n four layer device is correct?
a. It explains only the turn ON portion of
the device characteristic
b. It explains only the turn OFF portion
of the device characteristic
c. It explains only the negative region
portion of the device characteristic
d. It explains all the regions of the device
characteristics
12. Consider the following steps:
1. Etching
2. Exposure to uv radiation
3. Stripping
4. Developing.
After a wafer has been coated with photo
resist, the correct sequence of these steps
in photolithography is:
a. 2,4,3,1
b. 2,4,1,3
c. 4,2,1,3
d. 4,2,3,1
13.Following circuit represents a
Band-pass filter
Band-stop filter
Low-pass filter
High-pass filter
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ANAL OG SYSTEMS

c. 0.2 %
14. In active filter circuits, inductances are d. 0.01%
avoided mainly because they
a. Are always associated with some 18. The circuit diagram shown in the figure
resistance consists of transistors in:
b. Are bulky and unsuitable for.
Miniaturization
c. Are non-linear in nature
d. Saturate quickly

15. The magnitude response of a normalized a. Parallel connection

Butterworth low-pass filter is
a. Liner starting with the values of unity
at zero frequency and 0.707 at. the cut-
off frequency
b. Non-liner all through but with values
of unity at zero frequency and 0.707 at
the cut-off frequency
c. Linear up to the cut-off frequency and
non-linear thereafter
d. Non-linear up to the cut-off frequency
and linear thereafter
b. Cascode connection
c. Darlington connection
d. Cascade connection
19. In the case of the circuit shown in the
figure, Vi0 = 10 mV dc maximum, the
maximum possible output offset voltage
V00 caused by the input off set voltage Vi0
with respect to ground is:

16. The approximate value of input impedance

of a common emitter amplifier with
emitter resistance Re is given by
a. hie + A1 Re
b. hie + (1 + h fe ) Re 20. For an input of vs = 5sin ωt , (assuming
c. hie ideal diode) the circuit shown in the figure
d. (1 + hfe ) Re will behave as a
a. Clipper, sine wave clipped at – 2V
b. Damper, sine wave clamped at – 2 V
17. If an amplifier with gain of -1000 and c. Damper, sine wave clamped at zero
feedback of β = −0.1 had again change of d. Volt clipper, sine wave clipped at 2 V
20% due to temperature, the change in
gain of the feedback amplifier would be
a. 10%.
b. 5%
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23. In the circuit shown, it is required that V0

= V1 the values of l, m, n are respectively.
(x represents don’t care condition)

20.Following circuit is that of a

a. A sample/hold circuit
b. A rectifier/ amplifier circuit a. 0,1,1
c. A peak detector circuit b. ∞ ,x, x
d. An antilog amplifier circuit c. x, ∞ ,x
d. 0,x, ∞

24. In a transistor amplifier, the reverse

saturation current Ico
a. Doubles for every 10° C rise in
temperature
b. Doubles for every 1°C rise in
21. A 12-bit’ADCis employed to convert an temperature
analog voltage of zero to 10 volts. The c. Increases linearly with temperature
resolution of the ADC is d. Doubles for every 5°C rise in
a. 2.44 mV temperature
b. 24.4 mV
c. 83.3 mV
d. 1.2 V 25. In a bi stable multivibrator, commutating
capacitors are used to
a. Increase the base storae charge
22. In a 4-bit weighted-resistor D/A converter, b. Provide ac coupling
the resistor value corresponding to LSB is 16 kf. c. Increase the speed of response
The resistor value corresponding to the MSB d. Alter the frequency of the output
will be 26. A transistor amplifier has poles at
a. 1Ω S1 = – 0.00245×10 rad/s
b. 2Ω S2 = – 0.0748×109 rad/s
c. 4Ω S3 = 0.670×109 rad/s
d. 16Ω S4 = 4.38×109 rad/s
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26.The upper 3 dB frequency of the amplifier

will be 30. In the circuit shown in the figure, if e1 =
2V, e2 = 5V, e3 = 1V and E = 2 V. then
a. S1
which one of the diodes will be conducting
b. S1+S2+S3+S4 and what will be the e0?
c. S1+S4
d. S4

27. Consider the following statements:

A class-B amplifier
1. Is biased just at cut-off
2. Has a high theoretical efficiency of
78.5% because its quiescent current is
low.
3. Is biased at the mid- point of load line
Of these statements
a. 2 and 3 are correct
b. 1 alone is correct
c. 2 alone is correct a. D3;1V
d. 1 and 2 are correct b. D1;2V
c. D2;5V
d. D1;5V

28. A Tran conductance amplifier has

a. High input impedance and low output
impedance
b. Low input impedance and high output
impedance
c. High input and output impedances
d. Low input and output impedances
29. The primary advantage of a crystal
oscillator is that
a. It can oscillate at any frequency
b. It gives a high output voltage
c. Its frequency of oscillation remains
almost constant
d. It operates on a very low dc supply
voltage
31. Higher order active filter are used for
variable
a. Bandwidth
b. Gain in the pass-band
c. Impedance
d. Roll-off rate
32. Which one of the following pairs of
semiconductors and current carriers is
correctly matched?
a. Intrinsic : No. of electrons = No. of
holes
b. p-type : No. of electrons> No. of holes
c. n-type : No. of electrons <No. of holes
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d. Bulk : Neither electrons nor holes

37. A p-n junction diode’s dynamic
conductance is directly proportional to
33. A transistor emitter base voltage (VEB) of a. The applied voltage
20 mV has a collector current (IC) of 5 b. The temperature
mA. For VEB of 30 mV, IC is 30 mA. If c. Its current
VEB is 40 mV, then the Ic will be d. The thermal voltage
a. 55 mA
b. 160 mA
c. l80 mA 38. The unit of a thermal resistance of a
d. 270 mA
semiconductor device is
a. Ohms
b. Ohms/ °C
34. In a junction transistor, the collector cutoff
c. °C/ Ohm
current ICBO reduces considerably by
d. °C/ Watt
doping the
a. Emitter with high level of impurity
39. To avoid thermal runway in the design of
b. Emitter with low level of impurity
an analog circuit, the operating point of the
c. Collector with high level of impurity
BJT should be such that it satisfies the
d. Collector with low level of impurity
condition
a. VCE = ½ VCC
35. An ideal constant voltage source is
b. VCE ≤1/2 VCC
connected in series with an ideal constant
c. VCE > ½ VCC
current source. Considered together, the
d. VCE≤0.78 VCC
combination will be a
Consider the following devices:
a. Constant voltage source
1. BJT in CB mode
b. Constant current source
2. BJT in CE mode
c. Constant voltage and a constant current
3. JFET
source or a constant power source
4. MOSFET
d. Resistance
The correct sequence of these devices in
increasing order of their input impedance
36. In a junction transistor biased for operation
is
at emitter current ‘IE’ and collector current
a. 1,2,3,4
‘IC’ the transco0nductance ‘gm’ is
b. 2,1,3,4
a. KT/q IE
c. 2, 1, 4, 3
b. q IE/KT
d. 1, 3, 2, 4
c. IC/IE
d. IE/IC