KSP2222A

KSP2222A

General Purpose Transistor

• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Refer KSP2222 for graphs

1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 75 V
BVCEO Collector Emitter Breakdown Voltage IC=10mA, IB=0 40 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=60V, IE=0 0.01 µA
IEBO Emitter Cut-off Current VEB=3V, IC=0 10 nA
hFE DC Current Gain IC=0.1mA, VCE=10V 35
VCE=10V, IC=1mA 50
VCE=10V, IC=10mA 75
VCE=10V, *IC=150mA 100 300
VCE=10V, *IC=500mA 40
VCE (sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA 0.3 V
IC=500mA, IB=50mA 1 V
VBE (sat) * Base-Emitter Saturation Voltage IC=150mA, IB=15mA 0.6 1.2 V
IC=500mA, IB=50mA 2 V
fT Current Gain Bandwidth Product VCE=20V, IC=20mA 300 MHz
f=100MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
tON Turn On Time VCC=30V, IC=150mA 35 ns
IB1=15mA, VBE(off)=0.5V
tOFF Turn Off Time VCC=30V, IC=150mA 285 ns
IB1=IB2=15mA
NF Noise Figure IC=100µA, VCE=10V 4 dB
RS=IKΩ, f=1KHz
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as and PN2222A

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 KSP2222A
Package Demensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FAST® OPTOPLANAR™ STAR*POWER™
Bottomless™ FASTr™ PACMAN™ Stealth™
CoolFET™ FRFET™ POP™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ Power247™ SuperSOT™-6
DenseTrench™ GTO™ PowerTrench® SuperSOT™-8
DOME™ HiSeC™ QFET™ SyncFET™
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EnSigna™ MicroFET™ Quiet Series™ UHC™
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FACT Quiet Series™ OPTOLOGIC™ SMART START™ VCX™
STAR*POWER is used under license

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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H3

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