SPD07N60C3

Final data SPU07N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

Feature RDS(on) 0.6 Ω
• New revolutionary high voltage technology ID 7.3 A
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge P-TO251-3-1 P-TO252-3-1

• Periodic avalanche rated

• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

Type Package Ordering Code Marking

SPD07N60C3 P-TO252-3-1 Q67040-S4423 07N60C3
SPU07N60C3 P-TO251-3-1 - 07N60C3

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 7.3
TC = 100 °C 4.6
Pulsed drain current, tp limited by Tjmax I D puls 21.9
Avalanche energy, single pulse EAS 230 mJ
I D = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.5
I D = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 7.3 A
Reverse diode dv/dt dv/dt 6 V/ns
IS=7.3A, VDS=480V, T j=125°C
Gate source voltage static VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 83 W
Operating and storage temperature T j , T stg -55... +150 °C

Page 1 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 480 V, I D = 7.3 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 75
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area 2) - - 50
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s 3)

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=7.3A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=350µΑ, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C, - 0.5 1
Tj=150°C - - 100
Gate-source leakage current I GSS V GS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=4.6A, Ω
Tj=25°C - 0.54 0.6
Tj=150°C - 1.46 -
Gate input resistance RG f=1MHz, open Drain - 0.8 -

Page 2 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS≥2*I D*RDS(on)max, - 6 - S
ID=4.6A

Input capacitance Ciss V GS=0V, V DS=25V, - 790 - pF

Output capacitance Coss f=1MHz - 260 -
Reverse transfer capacitance Crss - 16 -
Effective output capacitance, 4) Co(er) V GS=0V, - 30 - pF
energy related V DS=0V to 480V

Effective output capacitance, 5) Co(tr) - 55 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - ns
Rise time tr ID=7.3A, RG=12Ω, - 3.5 -
Turn-off delay time td(off) Tj=125°C - 60 100
Fall time tf - 7 15

Gate Charge Characteristics

Gate to source charge Qgs V DD=480V, ID=7.3A - 3 - nC
Gate to drain charge Qgd - 9.2 -
Gate charge total Qg V DD=480V, ID=7.3A, - 21 27
V GS=0 to 10V

Gate plateau voltage V(plateau) V DD=480V, ID=7.3A - 5.5 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow
4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

Page 3 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 7.3 A
forward current
Inverse diode direct current, I SM - - 21.9
pulsed
Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V
Reverse recovery time t rr VR =480V, IF=IS , - 400 600 ns
Reverse recovery charge Q rr diF/dt=100A/µs - 4 - µC
Peak reverse recovery current I rrm - 28 - A
Peak rate of fall of reverse di rr/dt - - 800 A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
Rth1 0.024 K/W Cth1 0.00012 Ws/K
Rth2 0.046 Cth2 0.0004578
Rth3 0.085 Cth3 0.000645
Rth4 0.308 Cth4 0.001867
Rth5 0.317 Cth5 0.004795
Rth6 0.112 Cth6 0.045

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

Page 4 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
1 Power dissipation 2 Safe operating area
Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
100
SPD07N60C3 10 2

W A

80
10 1
70
Ptot

ID
60

50 10 0

40
tp = 0.001 ms
30 tp = 0.01 ms
10 -1 tp = 0.1 ms
tp = 1 ms
20
DC

10

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
1
10 24
K/W 20V
A 10V
8V 7V

10 0
ZthJC

16 6,5V
ID

10 -1 12 6V
D = 0.5
D = 0.2
D = 0.1
D = 0.05 8 5,5V
D = 0.02
-2
10 D = 0.01
single pulse 5V
4
4,5V

10 -3 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 VDS 25
tp V

Page 5 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS
13 10
A 4V
20V Ω
8V
11 6.5V 4.5V
8
10 6V

RDS(on)
9 7
ID

8 5V
6
5.5V
7 6V
5
6 6.5V
8V
4 5.5V
5 5V 20V

4 3

3 4.5V
2
2
4V
1
1

0 0
0 2 4 6 8 10 12 14 16 18 20 22 V 25 0 2 4 6 8 10 12 A 15
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 4.6 A, VGS = 10 V parameter: tp = 10 µs
SPD07N60C3
3.4 24
Ω A

2.8 20 25°C

18
RDS(on)

2.4
16
ID

2 14
150°C
12
1.6
10
1.2
8

0.8 98% 6

typ 4
0.4
2

0 0
-60 -20 20 60 100 °C 180 0 2 4 6 8 10 12 14 16 V 20
Tj VGS

Page 6 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
9 Typ. gate charge 10 Forward characteristics of body diode
VGS = f (QGate ) IF = f (VSD)
parameter: ID = 7.3 A pulsed parameter: Tj , tp = 10 µs
16
SPD07N60C3
10 2 SPD07N60C3

V
A

12

0.2 VDS max 10 1

VGS

10

IF
0.8 VDS max

6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 -1
0 4 8 12 16 20 24 28 nC 34 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Typ. drain current slope 12 Typ. switching time

di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C
par.: VDS =380V, VGS=0/+13V, ID=7.3A par.: V DS=380V, VGS=0/+13V, ID=7.3 A
3000 500

ns
A/µs
400

350
2000
di/dt

300
t

1500 250 td(off)

di/dt(on) 200
1000
150
td(on)
100 tf
500 tr
di/dt(off)
50

0 0
0 20 40 60 80 100 Ω 130 0 20 40 60 80 100 Ω 130
RG RG

Page 7 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
13 Typ. switching time 14 Typ. drain source voltage slope
t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS =380V, VGS=0/+13V, RG =12Ω par.: V DS=380V, VGS=0/+13V, ID=7.3A
90 100000

ns V/ns

td(off)
80000
70

70000
60

dv/dt
60000
t

50
50000
40
40000
30
tf 30000 dv/dt(on)
td(on)
20 tr
20000

10 dv/dt(off)
10000

0 0
0 1 2 3 4 5 6 A 8 0 20 40 60 80 100 Ω 130
ID RG

15 Typ. switching losses 16 Typ. switching losses

E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C
par.: VDS =380V, VGS=0/+13V, RG =12Ω par.: V DS=380V, VGS=0/+13V, ID=7.3A
0.025 0.2
*) Eon includes SDP06S60 *) E on includes SDP06S60
diode commutation losses. mWs diode commutation losses.

mWs
0.16

0.14
E

0.015 0.12

0.1
Eoff
0.01 Eoff 0.08

0.06
Eon*

0.005 0.04
Eon*
0.02

0 0
0 1 2 3 4 5 6 A 8 0 20 40 60 80 100 Ω 130
ID RG

Page 8 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
17 Avalanche SOA 18 Avalanche energy
IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 5.5 A, V DD = 50 V
8 260
mJ
A
220
Tj(START)=25°C
200
6
180

EAS
IAR

5 160
Tj(START)=125°C
140
4
120

3 100

80
2
60

40
1
20

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj

19 Drain-source breakdown voltage 20 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=0.5mJ
SPD07N60C3
720 500

W
680
V(BR)DSS

PAR

660
300
640

620
200

600

580
100

560

540 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 MHz 10
Tj f

Page 9 2003-09-16
 SPD07N60C3
Final data SPU07N60C3
21 Typ. capacitances 22 Typ. Coss stored energy
C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 4 5.5
pF µJ

Ciss 4.5
10 3
4

Eoss
3.5
C

3
10 2
Coss 2.5

10 1 1.5
Crss
1

0.5

10 0 0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
VDS VDS

Definition of diodes switching characteristics

Page 10 2003-09-16
 SPD07N60C3
Final data SPU07N60C3

P-TO-252-3-1 (D-PAK)

P-TO-251-3-1 (I-PAK)

6.5 +0.15
-0.10
2.3 +0.05
-0.10
A
5.4 ±0.1 B 0.9 +0.08
-0.04
1 ±0.1
6.22 -0.2

C
9.3 ±0.4

0.15 max
per side

3 x 0.75 ±0.1 0.5 +0.08

-0.04

2.28 1.0
4.56
0.25 M A B C GPT09050

All metal surfaces tin plated, except area of cut.

Page 11 2003-09-16
 SPD07N60C3
Final data SPU07N60C3

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 12 2003-09-16