IET Circuits, Devices & Systems

Relationship between Common-mode Rejection and Differential-mode Distortion in Fully-Differential Gm-C filters

Journal: Manuscript ID: Manuscript Type: Date Submitted by the Author: Complete List of Authors:

IET Circuits, Devices & Systems CDS-2011-0050 Research Paper 21-Feb-2011 Choogorn, Terdpun; Mahanakorn University of Technology, Electronics Engineering ACTIVE FILTERS, HARMONIC DISTORTION, NONLINEAR FILTERS, TRANSFER FUNCTION MATRICES

Keyword:

IET Review Copy Only

Page 1 of 16

IET Circuits, Devices & Systems

Relationship between Common-mode Rejection and Differential-mode Distortion in Fully-Differential Gm-C filters
Terdpun Choogorn and Jirayuth Mahattanakul
Department of Electronics, Mahanakorn University of Technology, Nongchok, Bangkok, THAILAND E-mail: neodeaw@gmail.com, jirayuth@mut.ac.th Abstract In this paper, a relationship between common-mode rejection and differential-mode distortion of the fullydifferential Gm-C filters employing pseudo-differential transconductors is investigated. The equation which relates differential-mode HD3 and common-mode gain of the Nth-order Gm-C filters is derived. It has been found that in the cases where the inverter based pseudo-differential transconductors are employed, the HD3 level of the odd-order filter is lower than that of the even-order filter. Also by enhancing the CM rejection, the HD3 of the odd-order filter and evenorder filter are decreased and increased respectively.

I.

INTRODUCTION

Although the transfer functions of interest in the fully-differential (FD) circuit design is that of the differential-mode (DM) signals, one of the main concerns in FD circuit design is instability which results from the embedded common-mode (CM) positive feedback loop. In FD Gm-C filter design, in particular the ones employing pseudo-differential transconductors, common-mode feedback (CMFB) networks are usually inserted to the integration nodes to damp out the CM gain and stabilize the circuit without affecting the DM operation. It was shown in [1] that the level of CM suppression varies widely with the distribution profile of the CMFB networks across the filter. Also suppression of the CM response is believed to help reducing the DM harmonic distortion components, which are caused by the cross product between DM and CM signals [2]. Based on the method proposed in [3], in this paper we will investigate the relationship between the level of CM suppression and the DM harmonic distortion in FD Gm-C filters. It will be shown that the suppression of CM response does not always results in the reduction of the DM distortion.

1
IET Review Copy Only

IET Circuits, Devices & Systems

Page 2 of 16

II.
C1 V1+ b1
CMFB

ANALYSIS OF THE DM AND CM RESPONSE OF GM-C FILTERS

Cf 1 C2 V2+ C3 V3+

Vi + Vi

Cf 2 C4 V4+
b4 V4 C4 Cf 2
CMFB

C5 V5+ b 5
CMFB

CN VN+

Vo+ Vo

Cf (N 1) / 2 CN 1 V + 1 N

CN VN+

Vo+

b 2

CMFB

b3
V3 C3

CMFB

bN

CMFB

bN1
V 1 N CN 1 Cf (N 1) / 2

CMFB

bN
VN CN

CMFB

V1 C1

V2 C2 Cf 1

V5 C5

VN CN

Vo

(N even)
Figure 1.

(N odd)

Nth-order ladder-based Gm-C filters.

Gmd

Gmd

Cf1

Gmd
God

Gmd

Cf2

Gmd
God

Gmd

Gmd

Gmd

C f (N 1)/2

Gmd
God

Gmd

Vid

God

Gmd

VD1
C1

God

God

b1god

Gmd

VD2

Gmd

VD 3

God

Gmd
b3god

VD 4

Gmd b4god

VD 5
b5god

God

Gmd

VDN

God

Vod

God

Gmd

VDN 1

God C 2

b2god

God C 3

God C 4

God C 5

God CN

bN god

God CN 1

Gmd bN 1god God CN

VDN

God

Vod

bN god

(N even)

(N odd)

(a)
Gmc Gmc Cf1 Cf2 Gmc
Goc

Gmc

Gmc

Gmc

Gmc

Gmc

C f (N 1)/2

Gmc
Goc

Vic

Goc

Gmc
Goc

V1 C
C1

Goc

Gmc

V2 C

Gmc
b2goc

V3 C

Goc

Gmc

V4 C

Goc

Gmc b4goc

V5 C
b5goc

Goc

Gmc

V CN

Goc

Voc

Goc

Gmc

V 1 CN

Gmc

VCN

Goc

Gmc

Voc

b1goc

Goc C 2

Goc C 3

b3goc

Goc C 4

Goc C 5

Goc CN

bN goc

Goc CN 1 bN 1goc Goc CN

bN goc

(N even)

(N odd)

(b)
Figure 2.

Linear half circuit of the FD filter in Fig. 1. (a) DM (b) CM

Fig. 1 shows the Nth-order ladder-based Gm-C filters with CMFB networks connected to the integration nodes. By defining the DM and CM voltages of nodes K(+) and K(-) as
VDK = VK ( + ) VK ( )

and

VCK = ( K ( + ) + VK ( ) ) / 2 V

and denoting Gmd and God as the DM transconductance gain and output conductance of the FD transconductors respectively and god as the DM conductance of the CMFB unit and Gmc and Goc as the CM transconductance gain and output conductance of the FD transconductors respectively and goc as the CM conductance of the CMFB unit, the linear DM and CM half circuit of the FD ladder Gm-C filter in Fig. 1 can be illustrated in Fig. 2(a) and 2(b) respectively. Based on (A-1) in Appendix A, the relationship between each DM node voltage and the DM input voltage can be shown as
VD ( ) = VD 1 ( ) VD 2 ( ) VDN ( ) = H D ( ) id ( ) V
T

(1)

where HD is the DM transfer function matrix defined as

H D ( ) = H D 1 ( ) H D 2 ( ) H DN ( ) = Z D ( )G ID
T

(2)

2
IET Review Copy Only

Page 3 of 16

IET Circuits, Devices & Systems

in which

ZD () = ( jC GMD + GOD + gOD )1

(3)

is DM impedance matrix which relates each node voltage to the currents flowing into every nodes. It can be observed from Fig. 2(a) that VDN = Vod and thus the DM transfer function of the filter is

H DN () = VDN () /Vid ()
Likewise based on (A-2), the relationship between each CM node voltage and the CM input voltage can be described as
VC ( ) = VC 1 ( ) VC 2 ( ) VCN ( ) = H C ( ) ic ( ) V
T

(4)

(5)

where HC is the CM transfer function matrix defined as

HC ( ) = HC 1 () HC 2 () HCN () = ZC ( )GIC
T

(6)

and

ZC () = (jC GMC + GOC + gOC )1

According to (6), since it can be observed from Fig. 2(b) that VCN = Voc , the CM transfer function of the filter is

(7)

HCN () = VCN () /Vic ()

(8)

III.

CM GAIN AND STABILITY OF THE FD GM-C FILTERS

Vic

R1
Gmc

Gmc

Gmc

Gmc

VC 1

R2
Gmc

VC 2

R3

Gmc

Gmc

VC 3

RN

Gmc

Gmc

V CN

Voc

b1goc + 3Goc

b2goc + 2Goc

b3goc + 2Goc

bN goc + 2Goc

Figure 3.

DC equivalent circuit of the CM half-circuit in Fig 2(b).

For convenience, we will define Hc as the DC gain of the above CM transfer function, i.e.

Hc = HCN (0) ,
The DC equivalent of the circuit in Fig. 2(b) is illustrated in Fig. 3 where it can be observed that

(9)

Voc = VCN = GmcVCN 1RN

where RN =
1 + 2Goc Gmc

bN goc

3
IET Review Copy Only

IET Circuits, Devices & Systems

Page 4 of 16

for k = 1, 2, , N - 2,

VCN k = GmcVCN k 1RN k

where RN k =

1
2 bN k goc + 2Goc RN k +1Gmc

VC 1 = GmcVic R1
where R1 =

1
2 b1goc + 3Goc Gmc R2Gmc

According to the above equations, the gain Hc can be shown as

Hc =

Voc Vic

N = Gmc Rk , k =1

(10)

By defining = goc / Gmc and = Goc / Gmc, (10) can be expressed in a form of rational function as

Hc =
where

1 (bN + 2 1)uN uN 1

(11)

uN = (bN 1 + 2 )uN 1 uN 2
in which

u1 = 1

and

u2 = b1 + 3 1

For example, in the cases for N = 3, 4 and 5, the CM gain of the filter are shown in (12), (13) and (14) respectively where

B1 = b1 + 3 and Bk = bk + 2 for k = 2, 3, , N.
Hc = 1 B1B2B3 B2 (B1 + B3 ) B1 + B2 B3 + 2
1 B1B2B3B4 B2B3 (B1 + B4 ) B1(B2 + B4 ) + B3 (B2 B4 ) + B1 + B2 + B3 + B4
(12)

Hc =

(13)

Hc =

B1B2B3B4B5 B2B3B4 (B1 + B5 ) B1B2 (B3 + B5 ) + B4 B5 (B1 + B3 ) B2B3 + (B2 + B4 )(B1 + B3 + B5 ) + B1 B2 + B3 B4 + B5 2

(14) It can be observed from (12), (13) and (14) that the CM gain is dependent upon the arrangement of CMFB networks in the filter.

4
IET Review Copy Only

Page 5 of 16

IET Circuits, Devices & Systems

For example, according to (12) for = -1 and = 0.005, Table 1 shows the values of Hc of the 3rd-order Gm-C filter where b1, b2 and b3 vary between 0 - 2 and BT = b1+ b2 + b3 is the total number of CMFB units employed in the filter. It should be noted that there are many cases that the filters are unstable and thus impractical to use.

Table 1. CM gain of the Gm-C filter in Fig 1 for N = 3. b1

0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2

b2
0 0 0 1 1 1 2 2 2 0 0 0 1 1 1 2 2 2 0 0 0 1 1 1 2 2 2

b3
0 1 2 0 1 2 0 1 2 0 1 2 0 1 2 0 1 2 0 1 2 0 1 2 0 1 2

BT
0 1 2 1 2 3 2 3 4 1 2 3 2 3 4 3 4 5 2 3 4 3 4 5 4 5 6

Hc
0.496 0.333 0.250 1.011 1.037 1.065 -28.128 -0.930 -0.473 0.333 0.251 0.201 1.031 -15.232 -0.908 -0.938 -0.243 -0.140 0.250 0.201 0.169 1.053 -0.913 -0.318 -0.477 -0.140 -0.082

Stability
unstable unstable unstable unstable unstable unstable stable stable stable unstable unstable unstable unstable stable stable stable stable stable unstable unstable unstable unstable stable stable stable stable stable

5
IET Review Copy Only

IET Circuits, Devices & Systems

Page 6 of 16

0
0.2

0.4

Hc
0.6
0.8

1.0

BT = b1 + b2 + b3

Figure 4.

CM gain of the 3rd order Gm-C filters versus number of CMFB units where the values of b1, b2, b3 are represented

by the numbers at the right side of each point.

1.0
0.8 0.6

Hc
0.4 0.2 0

BT = b1 + b2 + b3 + b4

Figure 5.

CM gain of the 4th order Gm-C filters versus number of CMFB units where the values of b1, b2, b3, b4 are

represented by the numbers at the right side of each point. Fig. 4 and 5 illustrate the plot between Hc and BT for the stable 3rd and 4th order Gm-C filters, respectively. It can be observed that Hc is negative for the 3rd-order case and positive for the 4th-order case. This is because for stable filter R1 RN are required to be positive otherwise certain embedded positive feedback loops will introduce instability to the whole circuit (see Appendix B). By combining the aforementioned condition with (10), it can be generally shown that for typical cases where Gmc is negative, the stable Nth-order filter must have negative Hc for odd N positive Hc for even N

6
IET Review Copy Only

Page 7 of 16

IET Circuits, Devices & Systems

IV.

DISTORTION ANALYSIS OF PSEUDO-DIFFERENTIAL GM-C FILTERS

Distortion analysis of the FD Gm-C filters in [4-7] are based on an assumption that DM distortion is caused only by nonlinear relationship between DM input voltage and DM output voltage of each FD transconductor. Although such an assumption is valid for the case of FD transconductors with high common-mode rejection ratio (CMRR), in general the DM and CM output currents of the FD transconductor depend on both the DM and CM input voltages. This is especially true in the case of pseudo-differential transconductor.

#M

#2

V+ V

#1 #1
#2
#M

I+ I

V+ V

I+ I

Figure 6.

Pseudo-differential transconductor.

gm 1Vi + gm 2Vi 2 + gm 3Vi 3

Vi

go

Vo

Figure 7.

Transfer characteristic of inverting single-ended transconductor.

Fig 6 shows pseudo-differential transconductor comprising 2M numbers of identical inverting single-ended transconductor. If the transfer characteristic of each single-ended transconductor in Fig. 6 can be described as depicted in Fig. 7, by neglecting the output conductance, the DM output current of the FD transconductor in Fig. 6 can be shown to be

Id = Gmd ( d + kVd3 + hVVd + ) V c

where Gmd = Mgm1 are the transconductors linear DM transconductance gain and

(15)

k = gm 3 / 4gm1

and

h = 2gm2 / gm1

(16)

are the coefficients associated with the third-order DM distortion and the DM-CM cross product respectively.

7
IET Review Copy Only

IET Circuits, Devices & Systems

Page 8 of 16

Correspondingly, by neglecting the output conductance, the CM output current of the FD transconductor in Fig. 6 can be expressed as

Ic = Gmc ( c + pVd2 + ) V
where Gmc = -Mgm1 are the transconductors linear CM transconductance gain and

(17)

p = gm 2 / 4gm1

(18)

is the coefficient associated with the DM voltage to CM current conversion. Based on (15) (18), the DM and CM halfcircuits of the pseudo-differential transconductor are illustrated in Fig. 8.
hGmdVcVd
kGmdVd3

DM
half-circuit

Vd

Id
Gmd
GmdVd

I
CM
half-circuit

pGmcVd2

Vc

Ic
Gmc

GmcVc

Figure 8.

DM and CM half circuits of the FD transconductor in Fig. 6.

V+
CMFB

Vd
DM
half-circuit

god

CM
half-circuit

V c

V
Figure 9.

2pgm 1Vd2

goc

CMFB network containing four single-ended transconductors.

Now consider the left-hand side of Fig. 9 where four identical inverting single-ended transconductors are connected together to form a CMFB network. If the transfer characteristic of each single-ended transconductor can be expressed as shown in Fig. 7, the DM and CM half-circuits of the CMFB network are shown in the right-hand side of Fig. 9 where

8
IET Review Copy Only

Page 9 of 16

IET Circuits, Devices & Systems

god = 2go
and

(19)

goc = 2(go + gm1 )

(20)

For convenience, in the following analysis we will use the symbol Vx voltage vx (t ) = Re Vx

to denote phasor representation of a sinusoidal

exp( jt ) . If a balanced input voltages with

v id (t ) = Re Vid exp( j i t )

(21)

are applied to the Nth-order ladder-based Gm-C filters in Fig. 1, the DM and CM output voltages at each node can be shown as [3], i.e.

vdK (t ) = Re VDKi exp( jit ) + Re VDK i exp( j 3it ) +

and

} {
2

(22)

vcK (t ) = VDC + Re VCK i exp( j 2it ) + ...

respectively, where K = 1, 2, 3,, N.

(23)

Also, according to [3] the state vector of the CM node voltages with frequency 2i and the state vector of the DM node voltages with frequency 3i can be shown as
VC
2i

= ZC (2i )

p 2

G V 2 + (G g )(V i )2 MC OC D IC id

(24)

and

VD
respectively where

3i

k h 2 3 = ZD (3i ) GIDVid + GMD (VD i )3 + GMD (VC i iVD i 2 4

(25)

VD i = H D (i ) id V

(26)

and (V)2 and (V)3 denote Hadamard square and Hadamard cube of vector V respectively and denotes Hadamard product between two vectors.

Likewise according to (2) and (25), it can be shown that

9
IET Review Copy Only

IET Circuits, Devices & Systems

Page 10 of 16

VC

2i

p H (2i ) id + ZC (2i )(G MC g OC )(VD i )2 V2 C 2

(27)

According to (2) and (25), it can be shown that

VD

3i

k k h 2 HD (3i ) id + ZD (3i )GMD (VD i )3 + (VC i iVD i ) V3 4 2 4

(28)

In the following analysis, we will consider the case where i is much lower than cut-off frequency such that

H DN (i ) H DN (3i ) H DN (0) 0.5 HCN (2i ) HCN (0) = Hc

(29) (30)

It should be noted that the gain of 0.5 in (29) is due to the fact that the Gm-C filter in Fig. 1 is based on a doubly-terminated passive filter. Also by applying the above condition to (3) and (7) and neglecting the effect of go , we have
1 ZD (3i ) ZD (0) GMD

(31)

and

ZC (2i ) ZC (0) (gOC GMC )1

respectively. Referring to (26) and (29), we have
VDNi = H DN (i ) id 0.5Vid V

(32)

(33)

Substituting (32) into (27) yields

VC
2 i

p 2

H (2 ) 2 (V i )2 Vid i D C

(34)

It is easy to see that the last element of the above vector is

VCN
2 i

p H (2i ) id (VDNi )2 V2 2 CN

(35)

Substituting (30) and (33) into the above equation and rearranging the result yields
VCN
2i

p 2 V (4H c 1) 8 id

(36)

Substituting (31) into (28), it can be shown that

VD
3 i

k h 2 H (3i ) id (VD i )3 (VC i i VD i ) V3 2 4 D

(37)

and the last element of the above vector is

VDN i

k h 2 H (3i ) id ( DNi )3 VCN i VDNi V3 V 2 4 DN

(38)

By substituting (29), (33) and (36) into (38) and rearranging the result, we have

10
IET Review Copy Only

Page 11 of 16

IET Circuits, Devices & Systems

VDN i

3 Vid

3k hp(4H c 1) 32

(39)

Since it can be observed from Fig. 2(a) that VDN is the DM output voltage of the filter, the HD3 of such output voltage can be expressed as

HD3 =

Vod

3i

Vod i

VDN i VDNi

(40)

Substituting (33) and (39) into (40) yields

HD3 =
2 Vid

16

3k hp(4H c 1)

(41)

Lastly by substituting (16) and (18) into (41), we have

2 Vid 3g m 3

HD3 =

32 2g m 1

g m2 g m1

(4H c 1)

(42)

Fig. 10 depicts the plot of (42) for the typical cases where the transconductors are linearised such that

2 gm 3 < 2gm 2 / 3gm 1 .

It can be observed from Fig. 10 that HD3 is linearly dependent on Hc and thus by increasing the CM rejection, the HD3 of the odd-order filter (which, according to the last section, has Hc < 0) and even-order filter (Hc > 0) are decreased and increased respectively.

HD3
slope =
2 Vid 3g m 3 g m 2 + 32 2g m1 g m1 2

2 Vid g m 2 8 g m1

higher CM rejection

(N odd) Hc <0
Figure 10.

(N even) Hc >0

Hc

Plot of (42).

11
IET Review Copy Only

IET Circuits, Devices & Systems

Page 12 of 16

V.

SIMULATION RESULTS

Based on the structure in Fig. 1, the pseudo-differential 3rd and 4th order Gm-C lowpass filters with 1 MHz cut-off frequency were designed and simulated. The single-ended transconductors employed in the FD transconductors and the CMFB networks are the CMOS inverter-based transconductor proposed in [8-9]. Such a filter is composed the FD transconductors and CMFB network units whose structures are illustrated in Fig. 6 (for M = 2) and Fig. 9 respectively. The unit transconductor, designed to work under 1-V supply voltage, has been realized using 0.18-m CMOS process technology where the sizes of NMOS and PMOS devices are (W/L) = 1.5 m/3 m and (W/L) = 1.8 m/0.5 m respectively. By using the extracted parameters associated with Fig. 7 below, gm1 = 16.21 A/V, gm2 = 8.54 A/V2 gm3 = -31.08 A/V3 and go = 77.77 nA/V the HD3 were computed from (42) and compared to the simulation results as illustrated in Fig. 11. It can be observed that for the 3rd order case where Hc is negative, HD3 is dependent upon the value of |Hc|. On the contrary for the 4th case where Hc is positive, HD3 is decreased when |Hc| is increased.
70

72

Hc >0

DM HD3 (dB)

74

76

Hc <0
Simulation 3rd -order Simulation 4 th -order Eq (41)

78

80 0.0

0.2

0.4

Hc

0.6

0.8

1.0

Figure 11.

Plot of HD3 for Vid = 50 mV and i = 10 kHz for the 3rd-order filters (where the set of three numbers for each

point indicates the values of b1, b2 and b3) and for the 4th-order filters (where the set of four numbers for each point indicates the values of b1, b2, b3, and b4).

12
IET Review Copy Only

Page 13 of 16

IET Circuits, Devices & Systems

VI.

CONCLUSION

It has been shown that the HD3 of the FD Gm-C filter employing pseudo-differential transconductors is closely related to the CM gain of the filter. It was found that the suppression of CM gain does not always help reducing the DM distortion. In particular for the demonstrated cases, the level of HD3 of the even-order filter can be decreased with increasing CM rejection and, on the contrary, the level of HD3 of the odd-order filter can be decreased with the decrease of CM rejection.

VII. [1]

REFERENCES

Mahattanakul J., Khumsat P., and Surakampontorn W.: Selection of the common-mode feedback network connection of fully differential Gm-C filters, IET Circuits Devices Syst., 2009, 3, (1), pp. 4956

[2]

Rezzi F., Baschirotto A., and Castello R.: A 3 V 12-55 MHz BiCMOS pseudo-differential continuous-time filter, IEEE Trans. Circuits Syst. I, 1995, 42, (11), pp. 896-903

[3]

Choogorn T., Mahattanakul J., and Worapishet A.: Analysis of the common-mode induced differential-mode distortion in Gm-C filters, Proc. Int. Symp. Circuits Syst., Paris, France, May 2010, pp. 3621-3624

[4]

Palaskas Y. and Tsividis Y.: Dynamic range optimization of weakly nonlinear, fully balanced, Gm-C filters with power dissipation constraints, IEEE Trans. Circuits Syst. II, 2003, 50, (10), pp. 714-727

[5]

Zhang Z., Celik A. and Sotiriadis P.: State space harmonic distortion modeling in weakly nonlinear, fully balanced Gm-C filters A modular approach resulting in closed form, IEEE Trans. Circuits Syst. I, 2006, 53, (1), pp. 4859

[6]

Celik A., Zhang Z., Sotiriadis P.: A State-Space Approach to Intermodulation Distortion Estimation in Fully Balanced Bandpass Gm-C Filters with Weak Nonlinearities, IEEE Trans. Circuits Syst. I, 2007, 54, (4), pp. 829844

[7]

Palumbo G., Pennisi M. and Pennisi S.: Distortion Analysis in the Frequency Domain of a Gm-C Biquad, ECCTD Circuit Theory and Design, 2007, (8) pp. 212-215

[8]

Nauta B., and Seevinck E.: Linear CMOS transconductance element for VHF filter, Electron. Lett., 1989, 25, pp. 448-450

[9]

Nauta B.: A CMOS transconductance-C filter technique for very high frequencies, IEEE J. Solid-State Circuits, 1992, 27, (2), pp. 142-153

[10]

Koziel S., Szczepanski S., and Schaumann R.: General approach to continuous-time Gm-C filters based on matrix description, Proc. IEEE Int. Symp. Circuits Syst., 2002, (5), pp. 647-650

13
IET Review Copy Only

IET Circuits, Devices & Systems

Page 14 of 16

[11]

Koziel S. and Szczepanski S.: Dynamic Range Comparison of Voltage-Mode and Current-Mode StateSpace GmC Biquad Filters in Reciprocal Structures, IEEE Trans. Circuits Syst. I, 2003, 50, (10), pp. 1245-1255

[12]

Hurst P.J. and Lewis S.H.: Determination of stability using return ratios in balanced fully differential feedback circuits, IEEE Trans. Circuits Syst. II, 1995, 42, (12), pp. 805817

VIII.

APPENDIX A

Referring to Fig. 2(a) and 2(b), several component matrices will be defined as follow.

GID and GIC are N 1 matrices defined as

GID = Gmd 0 0 0
T

and

GIC = Gmc

0 0 0

respectively.

GMD and GMC are N N matrices defined as

1 1 0 1 0 1 0 1 0 = 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Gmd 0 1 1 1 1 0 = 0 0 0 1 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Gmc 0 1 0 1 0 1 0 1 1

GMD

and

0 1 1 0 0 1

GMC

respectively

GOD and GOC are N N matrices defined as

3 0 = 0 0 0 0 2 0 0 2 0 0 0 0 0 God 0 2 3 0 = 0 0 0 0 2 0 0 2 0 0 0 0 0 Goc 0 2

GOD

and

GOC

respectively

gOD and gOC are N N matrices defined as

gOD = bgod
respectively where

and

gOC = bgoc

b = diag b1

b2

b3

bN

14
IET Review Copy Only

Page 15 of 16

IET Circuits, Devices & Systems

C is an N N matrix defined as
C = CG +

K =1

FK

where CG = diag C 1 C 2 C 3 C N ,
(n 2) / 2 M = (n 1) / 2 n even n odd

and CFK is an N N matrix whose all entries are zero except,

CFK [ 2K 1, 2K 1 ] = CFK [ 2K + 1, 2K + 1 ] = C fK CFK [ 2K + 1, 2K 1 ] = CFK [ 2K 1, 2K + 1 ] = C fK

By defining the DM and CM node voltages matrices as

VD ( ) = VD 1 ( ) VD 2 ( ) VD 3 ( ) VDN ( )
T

and
VC ( ) = VC 1 ( ) VC 2 ( ) VC 3 ( ) VCN ( )
T

respectively, Fig 2(a) and (b) can be described by the matrix-based state-space equations [10-11]

jCVD = (GMD GOD gOD )VD + GIDVid

and

(A-1)

jCVC = (GMC GOC gOC )VC + GICVic

respectively.

(A-2)

15
IET Review Copy Only

IET Circuits, Devices & Systems

Page 16 of 16

IX.

APPENDIX B

Vic

Gmc

Gmc b2goc + 2Goc

Gmc b3goc + 2Goc

Gmc bN 1goc + 2Goc

Gmc bN goc + 2Goc Gmc

Gmc b1goc + 3Goc Gmc

Figure 12.

Block diagram representation of the circuit in Fig. 3.

Rk

Gmc

Vk

Rk +1

Gmc

1 bk goc + 2Goc

1 bk goc + 2Goc

V k

2 GmcRk +1

Figure 13.

Feedback loop k of the circuit in Fig. 3.

It can be observed from Fig. 12 that the circuit in Fig. 3 contains multiple feedback loops [12]. As a result, to ensure stability, every loop gains are required to be less than unity. For instance, the condition for the loop gain of the feedback loop in Fig. 13 to be less than unity is
2 Gmc Rk +1

LGk =
which is equivalent to

bk goc + 2Goc

<1

(B-1)

Rk =

1
2 bk goc + 2Goc Gmc Rk +1

>0

(B-2)

By extending the above analysis to all the feedback loops, we found the circuit in Fig. 3 will be stable if R1 RN are positive.

16
IET Review Copy Only