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HIGH-Q, LARGE-STOPBAND-REJECTION INTEGRATED CMOS-MEMS OXIDE RESONATORS WITH EMBEDDED METAL ELECTRODES
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Yu-Chia Liu1, Ming-Han Tsai1, Wen-Chien Chen2, Sheng-Shian Li1,2, and Weileun Fang1,2 Inst. of NanoEngineering and MicroSystems and 2Dept. of Power Mechanical Engineering National Tsing Hua University, Hsinchu, Taiwan
area of capacitive resonators are often limited either by time-based etching process of [2]-[5] or the use of sophisticated fabrication facilities [5]. In particular, anchors or posts of resonators using aforementioned release processes would be considerably attacked by isotropic etchant with significant undercuts, leading to less rigid (i.e., elastic) foundations and therefore degrading resonator Q. To solve undercut issue encountered in most CMOS-MEMS platforms, a simple metal wet release process with excellent selectivity to SiO2 for CMOS-MEMS resonators was proposed and successfully demonstrated, showing well-defined anchor structures without undercuts to reduce vibration energy loss of fabricated resonators even using inherently low-Q clamped-clamped beam versions. In contrast to previous CMOS-MEMS resonators [2]-[5] composed mostly of metals, resonators fabricated in this work consist of more SiO2 than metals, potentially offering higher resonator Q due to better mechanical properties of silicon dioxide. As a result, electrode-embedded SiO2 clamped-clamped beam resonators monolithically integrated with circuits using CMOS-MEMS technology have been demonstrated in HF (high frequency) with Qs up to 4,400 and with the highest stopband rejection to date as compared with their CMOS-MEMS counterparts [2]-[5]. The entire device consists of a sub-micron air gap between driving part and
Metal Silicon Dioxide Anchor

ABSTRACT
A novel metal wet etching process to release CMOS-MEMS resonators has been developed and demonstrated for the first time to enable SiO2-rich resonator structure and embedded metal electrodes with well-defined anchors for Q enhancement. In virtue of exceptional selectivity of metal wet etchant to SiO2 among CMOS layers, the use of release holes needed for most of isotropic etching processes could be eliminated, hence substantially preserve the integrity of resonator structures and their anchors. With such a maskless metal release process, capacitively-transduced oxide resonators monolithically integrated with readout circuitry using standard CMOS 0.35 m 2P4M process have been fabricated and tested, showing resonator Qs up to 4,400, stopband rejections from 40 to 80 dB, centered at 3 MHz with maximum breakdown voltage of 250 V and better temperature coefficient of frequency (TCf) compared with that of mere-metal CMOS-MEMS counterparts due to SiO2-rich resonator configuration.

KEYWORDS
CMOS-MEMS, Integration, High-Q, Oxide resonator, Metal release, High selectivity

INTRODUCTION
Integration of MEMS devices and CMOS circuits towards single chip implementation shows great potential in many applications, such as RF-MEMS, biomedical, consumer, and industrial electronics [1]. Using CMOS-MEMS technology to realize integration of micromechanical structures and microelectronics particularly provides not only fast turnaround time and ease of use [2]-[5], but performance enhancement, more electrical routing compatibility, and zero-level packaging possibility [6]. In recent years, capacitive CMOS-MEMS resonators have been successfully demonstrated by the use of standard CMOS foundry processes followed by wet[2]-[4] and dry-based [5] post-CMOS release steps. With more advanced CMOS technologies, the performance of both CMOS and MEMS parts, such as the circuit bandwidth, motional impedance of resonators, and required dc-bias voltage, can be significantly improved due to their fine feature size [2], hence attaining higher level of integration, more functionality, lower power consumption, and less parasitics. However, the release processes mentioned above for submicron-range electrode-to-resonator gap spacing and large transduction

Readout Circuit vo RL Sense Electrode TIA im

vi VP

Silicon

Via

Metal-4 Metal-3 Metal-2 Metal-1 Air

im

Drive Electrode

Fig. 1: Perspective-view schematic of an electrode-embedded CMOS-MEM oxide resonator, including zoom-in of quarter cross-section view with signal transmission in a one-port test configuration.

978-1-4577-0156-6/11/$26.00 2011 IEEE

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Transducers11, Beijing, China, June 5-9, 2011

Table 1: Design Parameters of the Capacitively-Transduced CMOS-MEMS Oxide Resonator. Design Parameter Beam Length, Lr Beam Width, Wr Air Gap, do Oxide Thickness, hox Structure Thickness, Hr Effective Mass, mr Spring Constant, kr Resonance Frequency (Calculation) Resonance Frequency (Simulation) Value 55 4 0.64 1 1.64 0.0388 102 2.58 2.54 Unit m m m m m nkg N/m MHz MHz

resonator structure (i.e., sensing part) where the metal electrodes are embedded and where the readout circuit is monolithically integrated. The fabricated resonators with their readout circuits have been successfully tested in vacuum with center frequency around 3 MHz, Q greater than 4,400, and nearly 80 dB stopband rejection (SB rej.) using mere low-Q type clamped-clamped beam configuration. It has been verified that SiO2-rich resonators provide higher Q than that of metal-rich counterparts [4].

RESONATOR AND CIRCUIT DESIGN

Resonator Design Fig. 1(a) illustrates the perspective-view schematic of the proposed clamped-clamed beam resonator design along with its associated readout amplifier circuit in a typical one-port measurement setup. Such a resonator consists of (i) a sense electrode formed by metal and SiO2 films from CMOS BEOL (back-end-of-line) layers, and (ii) a drive electrode also formed by metal and SiO2, as shown in Fig. 1(b), leaving a sub-micron air gap of 0.64 m between two oxide layers and an overall capacitive gap of 2.64 m between two embedded metal layers, respectively. Hence, the effective electrode-to-resonator gap spacing could be reduced to 1.15 m due to the contribution of high-k oxide dielectrics. Table 1 summarizes the design parameters of the CMOS-MEMS clamped-clamped beam resonator used in this work. It is worth noting that SiO2 dielectric layers utilized to enclose metal electrodes not only enhance capacitive transduction but provide pull-in protection under high dc-bias operation. Furthermore, the resonator structure composed of mostly SiO2 offers additional temperature compensation scheme due to its (i.e., SiO2) positive temperature dependence of Youngs modulus [7]. Readout Circuitry Design A fully-differential CMOS readout circuit (i.e., transimpedance amplifier) implemented in this work to amplify the weak motional current im of the proposed resonators is a modified version of CMOS circuits in [8]. As compared with single-ended counterparts,

fully-differential operation provides higher signal resolution and better noise rejection duo to a symmetric circuit topology. Fig. 2 presents the detailed circuit schematic of the readout amplifier and common-mode feedback (CMFB) circuits. The core amplifier circuit consists of a single-stage differential pair (m1-m5) and an output stage configured as a source follower (m6-m9). The CMFB circuit using a continuous-time differential difference amplifier (DDA) is utilized to set the output dc level (at vop and von) of the readout amplifier. In addition, the MOS-bipolar pseudo-resistor devices (m10-m11) are operated at sub-threshold region in order to achieve high resistance of 20 M range. Most importantly, the parasitic capacitance induced by MOS-bipolar pseudo-resistor is only at sub-fF level which is negligible compared with the capacitance from sensing electrodes and interconnects. Fig. 3 presents an effective approach utilized to eliminate feedthrough currents often produced in one-port resonators [9]. In Fig. 3, the active resonator applied with dc-bias VP is excited by an input ac voltage (vac) in order for vibration while the dummy resonator is shorted to ground, therefore acting merely as a static capacitor. Therefore, the common-mode feedthrough currents from both resonators would then be cancelled out due to the nature of the differential pair, leaving only motional current im (from the active resonator) amplified and transformed into the output voltage (i.e., vop - von) of the readout circuit.

m6 m10 vinp m8

m3

m4

m7 m11 vop

m1

m2 m5

von

vinn m9 vcm

vbiasn

Readout Amplifier

CMFB

Fig. 2: Schematic diagrams of a fully-differential readout amplifier.

Active Resonator VP Co Rm vac Lm Cm im+ip ip Von Co Dummy Resonator GND CMOS Part Cp Cp Vop CL RL

MEMS Part

Fig. 3: Feedthrough cancellation using fully differential sensing mechanism.

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FABRICATION AND RESULTS

As indicated in Fig. 4(a), the proposed device was first prepared by TSMC using its standard 0.35 m 2-Poly-4-Metal CMOS process. In Fig. 4(b), the etching solution containing H2SO4 and H2O2 was utilized to
B A Poly Metal A (a) AA cross-section B BB cross-section Via Oxide

Si (b) Air Gap=0.64m

Si

remove both metal and tungsten-via layers [10]. Thus, the resonator structure with embedded sense electrode was suspended, forming electrode-to-resonator gap spacing defined by the thickness of sacrificial metal layer in between as shown in Fig. 4(b). This maskless etching technique provides excellent selectivity between metal and dielectric layers; therefore, the issues from timed etch [2]-[5] and relatively complicated release processes [5] could be greatly alleviated. Finally, RIE was used to remove passivation layer of the top electrodes for wire bonding, as shown in Fig. 4(c). Typical fabrication results are shown in Fig. 5. The fully-integrated device is clearly observed in the SEM micrograph of Fig. 5(a). Fig. 5(b) presents a dummy device that is used to suppress the feedthrough effect using differential sensing circuitry depicted in Fig. 3. The close-up views of Fig. 5(c) shows embedded drive and sense electrodes, respectively, where Fig. 5(d) further emphasizes the zoom-in of 0.64 m air gap between two oxide layers.

EXPERIMENTAL RESULTS
Si

Si (c)

Resonator

Circuit

Sense Electrode Electrical Pad

Si Drive Electrode

Si

Fig. 4: Fabrication sequence including (a) a chip manufactured by standard TSMC 0.35 m 2P4M process, (b) metal wet etching to form resonator structure and transducers gap, and (c) RIE dry etch to open the electrode pads.
CMOS Circuit ( a) MEMS Resonator Dummy Resonator

(b)

Anchor

Sense Electrode

Active Resonator

(c )

(d)

Fig. 6(a) presents an overall view of the CMOS-MEMS chip inside a ceramic housing with bonded wires for device measurement while Fig. 6(b) shows a global view of CMOS-MEMS clamped-clamped resonators monolithically integrated with their readout circuit. The occupied die area of CMOS-MEMS integration is approximately 400 m 600 m. The surface profile of a fabricated resonator was measured by optical interferometer (Veeco Inc., NT-1100) as shown in Fig. 7. The radius of curvature of the sense electrode is 7.21 mm, illustrating the residual stress often seen in CMOS-MEMS structures is not an issue for device operation. Measured frequency responses with/without readout circuits were characterized by network analyzer (Agilent Inc., 5071C), as shown in Fig. 8(a), indicating that resonators integrated with circuits have enhanced performance in terms of signal level, resonator Q, and stopband rejection. With a 3.3-V voltage supply, the dc current of approximately 1.5 mA from the fully-differential readout circuit was measured. Under fully-differential operation of devices in vacuum, not only Qs can be boosted up to 3,677 but the stopband rejection and feedthrough levels are significantly improved. In particular, the input terminal of the readout circuit provides both high resistance and low parasitic capacitance due to the design of the differential pair; therefore, the highest stopband rejection with 80 dB has
( a) (b)
MEMS

Embedded Drive Electrode

Air Gap (0.64m) 1mm 100m

IC

Fig. 5: SEM views of (a) CMOS-MEMS integration, (b) dummy device to suppress parasitic feedthrough, (c) zoom-in of the out-of-plane resonator, and (d) zoom-in of air gap.

Fig. 6: (a) Overall view of CMOS-MEMS chip in a ceramic housing. (b) Die photo of monolithic CMOS-MEMS integration.

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Table 2: CMOS-MEMS-Based Resonator Summary. This work Type Materials fo (MHz)

Radius of Curvature = 7.21mm

Ref [3] Beam Metal + Oxide 6.33

Ref [5] SFR Metal + Oxide 6.18 ~1,000 ~14

Ref [4] FF-Beam Metal + Oxide 14.5 ~1,500 ~10

CC-Beam Metal + Oxide 3.11

Fig. 7: The measured surface profile of a fabricated resonator structure after release process.

Q ~100* ~3,300-4,400 SB rej. ~4 ~40-80 (dB) * Measured in atmospheric pressure.

been demonstrated for the first time in any CMOS-MEMS resonators under VP = 170 V and input power (P) of -13 dBm, as shown in Fig. 8(b). On the other hand, the highest Q of 4,454 can be attained with reduced input power of -15 dBm, as shown in Fig. 8(c). Moreover, device breakdown under high bias voltage VP can also be prevented by such surrounding SiO2 layers; the device is still operational even under a dc bias VP of 250 V! Fig. 8(d) presents the plot of fractional frequency change versus temperature measurement from -40 to 80 , showing temperature coefficient of frequency (TCf) around -240ppm/ which is 1.5X better than that of CMOS-MEMS mere-metal resonators [4]. Table 2 summarizes the state-of-the-art CMOS-MEMS-based resonator technologies, showing that this work has successfully demonstrated integrated CMOS-MEMS resonators made by composite film stacking (metal + oxide) with very high Q and large stopband rejection.

platforms. Using the standard process of CMOS foundry together with maskless metal wet-etching technique provides an efficient and economical approach for MEMS/CMOS integration and prototyping with fast turnaround time. The experimental results of the monolithically-integrated resonator circuits exhibit highest Q and stopband rejection among any clamped-clamped beam resonators fabricated by other CMOS-MEMS technologies.

ACKNOWLEDGEMENTS
This research was sponsored in part by the National Science Council of Taiwan under grant of NSC-99-2218-E-007-006. The authors wish to appreciate the TSMC and the National Chip Implementation Center (CIC), Taiwan, for the supporting of CMOS chip manufacturing. The authors would also like to thank the National Center for High-Performance Computing for support of simulation tools.

CONCLUSIONS
The capacitive CMOS-MEMS oxide resonators with embedded metal electrodes have been proposed and successfully demonstrated with enhanced performance as compared with resonators made by other CMOS-MEMS
( a)
3.10 -40 Transmission [dB] 3.20 -10 Circuit / -20 -50 No circuit / Vacuum -30 Vacuum -60 -40 -50 -70 -60 -80 -70 -80 -90 -90 -100 -100 3.50 3.55 3.60 Frequency [MHz] Frequency [MHz] 3.15

REFERENCES
G. K. Fedder, et al., Proc. of IEEE, vol. 96, pp. 306-322, 2008. [2] J. L. Lopez, et al., J. Micromech. Microeng., vol. 19, 015002, 2009. [3] J. Verd, et al., Appl. Phys. Let., vol. 91, pp. 013501-1-013501-3, 2007. [4] W.-C. Chen, et al., IEEE MEMS10, Hong-Kong, Jan., 2010, pp. 204-207. [5] C.-C. Lo, et al., IEEE Transducers05, Seoul, Korea, Jun., 2005, pp. 2074-2077. [6] E. Marigo, et al., J. Micromech. Microeng., vol. 20, 064009, 2010. [7] R. Melamud, et al., Appl. Phys. Lett., vol. 90, pp. 244-107, 2007. [8] J. M. Tsai, et al., IEEE MEMS05, Miami, FL, Jan., 2005, pp. 630-633. [9] G. K. Fedder, IEEE Elec. Dev. Meeting, Hilton, Washington, Dec., 2005, pp. 274-277. [10] M.-H. Tsai, et al., J. Micromech. Microeng., vol. 19, 105017, 2009. [1]

(b)
0
Transmission [dB]

Transmission [dB]

-20 -40 -60 -80

Performance fo=2.986MHz Q=3,392 VP=170V P=-13dBm

Stopband Rejection =80dB

-100 2.96

2.97

2.98 2.99 3.00 Frequency [MHz]

3.01

Performance fo=3.523MHz VP=150V Q=1,212 P=-12dBm

Performance fo=3.154MHz VP=150V P=-12dBm Q=3,677

(c )
Transmission [dB]

(d)
Frequency drift (ppm)

-40

-60

Performance fo=3.111MHz Q=4,454 VP=170V P=-15dBm

0 -5000 -10000 -15000 -20000 -25000 -30000

10 10

Condition VP=150V P=-12dBm

-80 3.09 3.10 3.11 3.12 Frequency [MHz] 3.13

TCf = -240ppm/
0 20 40
0

-60 -40 -20

60

80

Temperature ( C)

Fig. 8: (a) Measurement results with/without circuit tested in vacuum, (b) frequency response with the highest stopband rejection, (c) frequency response with the highest Q value, and (d) measured fractional frequency change versus temperature.

CONTACT
*W. Fang, Tel: +886-3-5742923; fang@pme.nthu.edu.tw

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