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VCC
R B1
RC VCC
RB
RC
RB
2 1
R B2
RB1
RC VCC
4
RB2
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AT-41486
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C B
VBE VCE
I BB
IB
VBE
hie
hFEI B
VCE ICBO(1+hFE)
RC
E
VBE R B2
VCC
E
A. Bias circuit showing only the DC components. B. The equivalent circuit of figure A used in DC stability analysis.
IC = hFE IB + ICBO (1+hFE) - where hFE is the DC current gain of the transistor and ICBO is the current flowing through a reverse biased PN junction. VBE = V + IB hie BE - where V is internal to the transistor and hie is the equivalent Hybrid input resistance of the transistor and is equal BE - to hFE / ( where @ +25 degrees C. hie is generally much smaller than Rb Ic) =40
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IB
I BB
VBE
hie
hFEI B
VCE ICBO(1+hFE)
RC
VBE R B2
VCC
E
The equivalent circuit of the voltage feedback and constant base current source bias network used in DC stability analysis.
VBE, hFE, ICBO VBE has a typical negative temperature coefficient of -2mV/C. hFE typically increases with temperature at the rate of 0.5%/C. ICBO typically doubles for every 10C temperature rise.
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RB
RC
RB
RC
RB = 30770 ohms
RC = 140 ohms
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IC
h FE . V CC h ie
V BE RB
I CBO. 1
h FE
RB
RC
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RB
RC
V CC IC
V CE IB
RB
RC VCC
RB = 19552 ohms
RC = 138 ohms
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IC
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RB
RB
V RB2 IB
V BE
R B2
R B1
V CE I B2
V RB2 IB
R B2
V RB2 I B2
RC= 126 ohms RB = 11,539 ohms RB1 = 889 ohms RB2 = 3000 ohms
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I CBO. 1
h FE
RC VCC
RB
R B2
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VCC = 2.7V, VCE = 2V, IC = 5 mA, hFE = 80 typ, 50 min, 150 max VBE = 0.78 V, ICBO = 1x10-7 A @ +25 deg C
R B2
RC
V CC IC IB
V CE I B2
R B1
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VCC = 2.7V, VCE = 2V, IC = 5 mA, hFE = 80 typ, 50 min, 150 max VBE = 0.78 V, ICBO = 1x10-7 A @ +25 deg C
IC RC .I CBO h FE R C. I CBO RC . V BE R B2 RC .h . I ie CBO R B2 . h FE RC R B2 .h . ie I CBO RC h FE R B1 h FE .I CBO R B1 . I CBO .h R B1 ie h FE R B1 R B2 . V BE .h R B1 .h . I ie CBO R B2 . h FE ie 1 . h ie h FE R B1 .h . I ie CBO R B2 VBE 1 . h ie. I CBO h FE h ie. I CBO V CC
RC
RC R B2 . h FE
R B1 R B2 . h FE
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RE
IC
V CC V CE I CBO . 1 h FE h FE
IC
R1
V CC I B2
I B2 . R 2 IB
R2
V RB2
V BE
IB
I C .R E
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VCC = 2.7V, VCE = 2V, IC = 5 mA, hFE = 80 typ, 50 min, 150 max VBE = 0.78 V, ICBO = 1x10-7 A @ +25 deg C
V BE IC h FE 1 . h ie. I CBO h ie. I CBO RE h FE .I CBO R E .I CBO R1 R2 . V BE RE h FE R1 R 2.h FE RE .h . ie I CBO .h R1 R2 .h . ie I CBO R1 R2 .R R1 RE . .I CBO R 2 h FE R1 E h FE R1 .R .I E CBO R2 R1 h FE .I CBO R 1. I CBO V CC 1 . h ie R1 R 2. h FE R1 RE . R 2 h FE
h FE
ie
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RC
VCC
RB1
RC
VCC
R B2
RB2
Bias Circuit
Voltage Feedback Bias Network Feedback 3.63 5.0 7.09 +42% -27%
Ic(mA) @ minimum hFE Ic(mA) @ typical hFE Ic(mA) @ maximum hFE Percentage change in Ic from nominal Ic
Voltage Feedback w/Current Source Bias Network 3.66 5.0 6.98 +40% -27%
Voltage Feedback w/Voltage Source Bias Network 4.53 5.0 5.44 +9% -9%
Bias circuit #5 offers best control on hFE variation but requires emitter resistor Bias circuit #4 offer best control on hFE variation without the use of an emitter resistor Bias circuits #2 and #3 are very similar in performance.
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I CBO = C I I CBO
First Calculate the stability factors for VBE, ICBO, and hFE. Then, to find the change in collector current at any temperature, multiply the change from 25 of C each temperature dependent variable with its corresponding stability factor and sum.
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RC
V CC
R B1
RC
VCC
R B2
R B2
Bias Circuit
#2 Voltage Feedback 52.238 -2.568011x10-3 4.031x10 -5 0.078 0.205 0.645 0.928 18.6%
ICBO Stability Factor VBE Stability Factor hFE Stability Factor C due to I CBO (mA) I C due to V BE (mA) I C due to h FE (mA) I Total C (mA) I Percentage change in Ic from nominal Ic
#3 Voltage Feedback w/Current Source 50.865 -3.956x10 -3 3.924702x10 -5 0.076 0.316 0.628 1.020 20.4%
#4 Voltage Feedback 19.929 -0.015 1.537669x 10-5 0.030 1.200 0.246 1.476 29.5%
#5 Emitter Feedback
Bias Circuits #1 non-stabilized #2 volt feedback #3 volt feedback w/current source #4 voltage feedback #5 emitter feedback
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Bias circuits #2 and #3 similar in performance at temp and superior to #1 and #4 Bias circuit #5 is superior but requires emitter resistor and emitter bypass
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RC
VCC
R B1
RC
VCC
R B2
R B2
Bias Circuit ICBO Stability Factor VBE Stability Factor hFE Stability Factor C due to ICBO (mA) I C due to VBE (mA) I C due to hFE (mA) I Total C (mA) I
Bias Circuits #1 non-stabilized #2 volt feedback #3 volt feedback w/current source #4 voltage feedback #5 emitter feedback
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Bias circuits #2, #3 and #4 similar in performance at temp and superior to #1 Bias circuit #5 is superior but requires emitter resistor and emitter bypass ICBO and hFE variations are major contributors at elevated temperature
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Percent Change in Quiescent Collector Current versus hFE for the HBFP-0405
100.00% 80.00% 60.00% 40.00% 20.00% 0.00% -20.00% -40.00% 50 70 90 110 hFE 130 150 Voltage Feedback Voltage Feedback w/Current Source Voltage Feedback w/Voltage Source Emitter Feedback
Nob-stabilized
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Percent Change in Quiescent Collector Current versus Temperature for the HBFP-0405
30.00% 20.00% 10.00% 0.00% -10.00% -20.00% -30.00% -40.00% -25 -15 -5 5 15 25 35 45 55 65 Temperature (o C) Voltage Feedback Voltage Feedback w/Current Source Voltage Feedback w/Voltage Source Emitter Feedback Non-stabilized
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Percent Change in Quiescent Collector Current versus Ratio of IC to IRB1 for Max. hFE and +65oC for the HBFP0405
Maximum hFE and +65 C
Percentage Change from Ic (+)
o
140% 120% 100% 80% 60% 40% 20% 0% 1 10 Ratio of Ic to IRB1 100 Voltage Feedback Voltage Feedback w/Current Source Voltage Feedback w/Voltage Source Emitter Feedback Non-stabilized
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Percent Change in Quiescent Collector Current versus Ratio of IC to IRB1 for Min. hFE and -25oC for the HBFP-0405
o
140.00% 120.00% 100.00% 80.00% 60.00% 40.00% 20.00% 0.00% 1 10 Ratio of Ic to IRB1 100
Non-stabilized Voltage Feedback Voltage Feedback w/Current Source Voltage Feedback w/Voltage Source Emitter Feedback
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Conclusions
Emitter feedback in circuit #5 offers the best control on hFE variations from device to device and over temperature. However, an emitter bypass capacitor is needed to provide a good RF short. The inductance associated with the bypass capacitor quite often causes circuit instabilities with high f t transistors. Best alternative is circuit #4 followed by circuit #2. Circuit #4 offers best control on hFE variation from device to device and circuit #2 provides best performance up to +65 degrees C. At +85 degrees C, circuit #4 performs as well as circuit #2.
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Additional Thoughts
Higher Vcc can improve the performance of all bias circuits Additional base bias resistor current can often improve bias regulation An increase in the value of the emitter resistor for circuit #5 will offer increased bias circuit regulation. Active bias network offers best regulation but requires additional components.
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