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Tech Engineering Physics Course File 1) 2) 3) 4) Syllabus Lecture Schedule Objective Questions (Unit wise) Subjective Questions (Unit wise) JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD I Year B.Tech (2010-11) ENGINEERING PHYSICS UNIT-I 1. Bonding in Solids: Ionic Bond, Covalent Bond, Metallic Bond, Hydrogen Bond, Vander-Waals Bond, Calculation of Cohesive Energy. 2. Crystallography and Crystal Structures: Space Lattice, Unit Cell, Lattice Parameters, Crystal Systems, Bravais Lattices, Miller Indices, Crystal Planes and Directions, Inter Planar Spacing of Orthogonal Crystal Systems, Atomic Radius, Co-ordination Number and Packing Factor of SC, BCC, FCC, Diamond and hcp Structures, Structures of NaCl, ZnS, CsCl. UNIT-II 3. X-ray Diffraction: Basic Principles, Braggs Law, Laue Method, Powder Method, Applications of X- ray Diffraction. 4. Defects in Crystals: Point Defects: Vacancies, Substitutional, Interstitial, Frenkel and Schottky Defects;Qualitative treatment of line (Edge and Screw Dislocations) Defects, Burgers Vector, Surface Defects and Volume Defects. UNIT-III 5. Elements of Statistical Mechanics: Maxwell-Boltzman, Bose-Einstein and Fermi-Dirac Statistics (Qualitative Treatment), Photon gas , Weins Law, Rayleigh-Jeans law,, Plancks Law of Black Body Radiation, Concept of Electron Gas, Fermi Energy, Density of States. 6. Principles of Quantum Mechanics: Waves and Particles, de Broglie Hypothesis , Matter Waves, Davisson and Germers Experiment, G. P. Thomson Experiment, Heisenbergs Uncertainty Principle, Schrdingers Time Independent Wave Equation - Physical Significance of the Wave Function Particle in One Dimensional Potential Box. UNIT-IV 7. Band Theory of Solids: Electron in a periodic Potential, Bloch Theorem, Kronig-Penny Model (Qualitative Treatment), Origin of Energy Band Formation in Solids, Classification of Materials into Conductors, Semi Conductors & Insulators, Concept of Effective Mass of an Electron and Hole. UNIT-V 8. Semiconductor Physics: Fermi Level in Intrinsic and Extrinsic Semiconductors, Intrinsic Semiconductors and Carrier Concentration, Extrinsic Semiconductors and Carrier Concentration, Equation of Continuity, Direct & Indirect Band Gap Semiconductors, Hall Effect. 9. Physics of Semiconductor Devices: Formation of PN Junction, Open Circuit PN Junction, Energy Diagram of PN Diode, I-V Characteristics of PN Junction, PN Diode as a Rectifier (Forward and Reverse Bias), Diode Equation, LED, LCD and Photo Diodes. UNIT-VI 10. Dielectric Properties: Electric Dipole, Dipole Moment, Dielectric Constant, Polarizability, Electric Susceptibility, Displacement Vector, Electronic, Ionic and Orientation Polarizations and Calculation of Polarizabilities - Internal Fields in Solids, Clausius - Mossotti Equation, Piezo-electricity, Pyroelectricity and Ferro- electricity. 11. Magnetic Properties: Permeability, Field Intensity, Magnetic Field Induction, Magnetization, Magnetic Susceptibility, Origin of Magnetic Moment, Bohr magneton, Classification of Dia, Para and Ferro Magnetic Materials on the basis of Magnetic Moment, Domain Theory of Ferro Magnetism on the basis of Hysteresis Curve, Soft and Hard Magnetic Materials, Properties of Anti-Ferro and Ferri Magnetic Materials, Ferrites and their Applications, Concept of Perfect Diamagnetism, Meissner Effect, Magnetic Levitation, Applications of Superconductors. UNIT-VII` 12. Lasers: Characteristics of Lasers, Spontaneous and Stimulated Emission of Radiation, Meta-stable State, Population Inversion, Lasing Action, Einsteins Coefficients and Relation between them, Ruby Laser, Helium-Neon Laser, Carbon Dioxide Laser, Semiconductor Diode Laser, Applications of Lasers. 13. Fiber Optics: Principle of Optical Fiber, Acceptance Angle and Acceptance Cone, Numerical Aperture, Types of Optical Fibers and Refractive Index Profiles, Attenuation in Optical Fibers, Application of Optical Fibers.

UNIT-VIII 14. Acoustics of Buildings & Acoustic Quieting: Basic Requirement of Acoustically Good Hall, Reverberation and Time of Reverberation, Sabines Formula for Reverberation Time(Qualitative Treatment), Measurement of Absorption Coefficient of a Material, Factors Affecting The Architectural Acoustics and their Remedies. Acoustic Quieting: Aspects of Acoustic Quieting, Methods of Quieting, Quieting for Specific Observers, Mufflers, Sound-proofing. 15. Nanotechnology: Origin of Nanotechnology, Nano Scale, Surface to Volume Ratio, Quantum Confinement, Bottom-up Fabrication: Sol-gel, Precipitation, Combustion Methods; Top-down Fabrication: Chemical Vapour Deposition, Physical Vapour Deposition, Pulsed Laser Vapour Deposition Methods,Characterization (XRD&TEM) and Applications. TEXT BOOKS:
1. Applied Physics P.K.Palanisamy (SciTech Publications (India) Pvt. Ltd., Fifth Print 2008). 2. Applied Physics S.O. Pillai & Sivakami (New Age International (P) Ltd., Second Edition 2008). 3. Applied Physics T. Bhima Shankaram & G. Prasad (B.S. Publications, Third Edition 2008).

REFERENCES: 1. Solid State Physics M. Armugam (Anuradha Publications). 2. Modern Physics R. Murugeshan & K. Siva Prasath S. Chand & Co. (for Statistical Mechanics). 3. A Text Book of Engg Physics M. N. Avadhanulu & P. G. Khsirsagar S. Chand & Co. (for acoustics). 4. Modern Physics by K. Vijaya Kumar, S. Chandralingam: S. Chand & Co.Ltd 5. Nanotechnology M.Ratner & D. Ratner (Pearson Ed.). 6. Introduction to Solid State Physics C. Kittel (Wiley Eastern). 7. Solid State Physics A.J. Dekker (Macmillan). 8. Applied Physics Mani Naidu Pearson Education
LECTURE SCHEDULE ENGINEERING PHYSICS I B.Tech S.NO UNIT TOPIC (Year Plan 2010-2011) No. Of Hours

UNIT I: BONDING IN SOLIDS 1. 2. 3. 4.

Introduction, Types of Bonding Ionic Bond, Covalent Bond, Metallic Bond Hydrogen Bond and Vander-Waals Bond Cohesive Energy, calculation of cohesive energy

1 1 1 1 1 1 1 1 1 1 1 1 1 1 2

CRYSTALLOGRAPHY AND CRYSTAL STRUCTURES 5. Space lattice, crystal structure, Unit cell, Lattice Parameters 6. Crystal systems, Bravais Lattices 7. Structures and packing fractions of SC, BCC structures 8. FCC and HCP Structures 9. Structures of NaCl and CsCl 10. Structures of Diamond, ZnS 11. Tutorial- Problems 12. Miller Indices, Planes 13. Directions 14. Interplanar Spacing 15. Tutorial Review UNIT II: CRYSTAL PLANES & X-RAY DIFFRACTION 17. Basic Principles, Braggs law 18. Laue and Powder Methods 19. Applications and problems DEFECTS IN SOLIDS 21. 22. 23. 24. 25. 26.

1 1 2

Imperfections, point defects, vacancies, Interstitialcies Schottky and Frenkel defects, Energy formation of a vacancy Equilibrium concentration of Schottky and Frenkel defects Line defects; Edge and screw dislocations Burgers vector, Surface and Volume defects Tutorial-Review

1 1 1 1 1 1

UNIT III: ELEMENTS OF STATISTICAL MECHANICS 27. Maxwell-Boltzman, Bose-Einstein and Fermi-Dirac Statistics 28. Photon gas, Plancks Law of Black Body Radiation 29. Weins Law, Rayleigh-Jeans law 30. Fermi Energy, Concept of Electron Gas 31. Density of States

1 1 1 1 1

PRINCIPLES OF QUANTUM MECHANICS 32. Waves & Particles, De Broglie hypothesis, Matter waves 34. Davisson- Germer and GP Thomsons experiment 35. Schrdingers wave equation 36. Physical significance of , Uncertainty principle 37. Particle in potential box UNIT-IV: BAND THEORY OF SOLIDS 38. Electron in a periodic Potential, Bloch Theorem, K-P Model 40. Origin of Energy Band Formation in Solids 41. Classification of Conductors, Semi Conductors & Insulators 42. Concept of Effective Mass of an Electron and Hole UNIT-V: SEMICONDUCTOR PHYSICS 43. Intrinsic Semiconductors and Carrier Concentration 44. Extrinsic Semiconductors and Carrier Concentration 45. Fermi Level in Intrinsic and Extrinsic Semiconductors 46. Equation of Continuity 47. Direct & Indirect Band Gap Semiconductors, Hall Effect PHYSICS OF SEMICONDUCTOR DEVICES 49. Formation of P-N junction, Open circuit P-N junction 50. Energy Diagram, Diode Equation I-V Characteristics 51. PN Diode as a Rectifier 53. LED, LCD, Photo diode 55. Tutorial UNIT-VI: DIELECTRIC PROPERTIES 57. Introduction to Dielectrics-Definitions 58. Electronic, Ionic, Orientation polarizations 60. Internal field- Clausius - Mosotti equation 62. Ferro electricity , Piezo and Pyroelectricity MAGNETIC PROPERTIES 64. 65. 66. 67. 68. 70. 72. UNIT VII: LASERS 74. 75. 76. 77. 78. FIBER OPTICS 79. 80. 81. 82. Permeability, Magnetization & other Definitions Origin of Magnetic moment- Bohr Magneton Classification of Dia, Para and Ferro AFM & Ferri Materials Domain Theory / Hysteresis Soft and Hard Magnetic Materials, Ferrites- Applications Meissner Effect, Magnetic Levitation, Applications of Scs Tutorial-repetition

2 1 1 1 1

2 1 1 1

1 1 1 1 2 1 1 2 2 2

1 2 2 2 1 1 1 1 2 2 2

Spontaneous, Stimulated Emission, Einsteins Coefficients Population inversion, Pumping- Ruby Laser He-Ne and CO2 Lasers Semiconductor Lasers Characteristics and Applications

1 1 1 1 1

Principles of Optical fiber, NA, and Acceptance angle Step and Graded index fiber - Signal transmission Attenuation in Optical fibers, Applications of Optical fibers Tutorial- Review

1 1 1 2

UNIT VIII: ACOUSTICS OF BUILDINGS & ACOUSTIC QUIETING 84. Basic Requirement, Reverberation, Sabines Formula 85. Absorption Coefficient 1 86. Factors Affecting Arch.Acoustics- Remedies 1 87. Acoustic Quieting 88. Sound Proofing- Qualities of acoustically good hall NANOTECHNOLOGY 89. Origin of Nanotechnology, Quantum Confinement 90. Bottom-up Fabrication: Top-down Fabrication 91. Characterization (XRD&TEM) Techniques 92. Applications 93. Tutorial Total number of classes required 94

1 1 1 1 1 1 1 2

UNIT- I Bonding In Solids & Crystal Structures Objective Questions 1. An atom combines with another atom of the same element or different elements to form a molecule a) to achieve stable octet electron configuration in its outermost orbit b) to obey Paulis exclusion principle c) to get minimum energy d) both a) and c) There can be ________ forces between two atoms. a) only attractive b) only repulsive c) both attractive and repulsive d) no The attractive forces between two atoms are due to a)core electrons b) nuclei c) outermost electrons d) both a) and c) The repulsive forces between two atoms are due to a)core electrons b) nuclei c) outermost electrons d) both a) and c) The primary bonds operate between a) atoms of the same element b) atoms of different elements c) different molecules d) both a) and b) The type of bonds which operate between two different molecules or between two atoms of an inert gas are a) primary b) secondary c) covalent d) ionic At the equilibrium distance between two atoms, its a) PE is minimum b) PE is maximum c) KE is zero d) None During the formation of a bond a) some energy is lost b)some energy is gained c) energy remains constant d) total mass decreases Different _________ give rise to different types of bonding between atoms a) charge distributions in the atoms due to outermost electrons b) charge distributions in the atoms due to core electrons c) both a) and b) d) charges on nuclei of atoms A chemical bond is formed due to a) Inter-atomic force of attraction b) Inter-molecular force of attraction c) Inter-ionic force of attraction d) all of the above The chemical bonds are grouped into __ groups based on the bond strength a) 2 b) 3 c) 4 d) 5 Identify the primary bonds from the following bonds 1) covalent 2) ionic 3) metallic 4) hydrogen 5) vander waals a) 1 ,2 ,3 b) 3 ,4 ,5 c) 1 ,4 d) 4 ,5 Identify the examples for secondary bonds from the following bonds 1) covalent 2) ionic 3) metallic 4) hydrogen 5) vander waals a) 1 ,2 ,3 b) 3 ,4 ,5 c) 1 ,4 d) 4 ,5 Ionic bond is basically ______ in nature. a) Weak b) electrostatic c) gravitational d) none The transfer of electrons between two atoms form a)covalent bond b) Ionic bond c) Molecular bond d) Metallic bond The solid ionic crystals are ______ and aqueous ionic crystals are ______ of electricity. a) conductors , insulators b) conductors , conductors c) insulators , conductors d) insulators , insulators The transfer of _________ electrons between two atoms

2. 3. 4. 5. 6. 7. 8. 9.

10. 11. 12. 13. 14. 15. 16.

17.

1. 2. 4. 6. 7. 10.

Among the following bonds, which is stronger bond? a)Ionic bond b)Metallic bond c)Hydrogen bond d) Vanderwaals bond The bond between ice molecules is a) Covalent bond b)Metallic bond c)Hydrogen bond d)Dispersion bond Which bond is available in all the three states of matter a) Metallic bond b) covalent bond c) Ionic bond d) Vanderwaals bond When bond length is decreased, the bond energy a) remains constant b)also decreases c)increases d)None of these. The bond formed by oscillatory dipole is a) covalent bond b)hydrogen bond c)dispersion bond d)ionic bond The covalent bond is a) Highly directional b) non-directional c) weak d) none

Fill in the blanks 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 15. 19. 20. 21. 22. 23. The attractive and repulsive forces between two atoms cancel other at ______. The energy range of primary bonds is ___________. The energy range of secondary bonds is __________. The equilibrium separation between two atoms is also called as ____ length. The metallic bond is an example of ___________bond. The ionic bond is an example of ___________bond. The covalent bond is an example of ________ bond. The hydrogen bond is an example of ________ bond. The vanderwaals bond is an example of _____ bond. The amount of energy needed to move an atom completely away from its equilibrium position is called ___________. _______ bonding is a quantum mechanical phenomenon. a) Ionic b) covalent c) metallic d) hydrogen An example of a Vander Waals bond is a) Neon b) NaCl c) GaAs d) Germanium The type of bonding in Ge is_____________ Covalent bond is also called as ___________ The amount of energy required to break a crystal lattice into its constituent neutral atoms is called ___________. The fixed distance between any two atoms under stable configuration is called as___________ The Cohesive energy per molecule of KCl 4.4eV. The cohesive energy when expressed in KJ/mole is _______________.

Subjective Questions 1. a) Explain the formation and properties of an ionic crystal, with a suitable example. (JNTU 2010) b) Derive an expression for the cohesive energy of an ionic crystal. [7+8] 2. a) What is bonding in solids? Write the list of different types of bonding in solids. (JNTU 2010) b) Describe with suitable examples, the formation of covalent and Vander-Waal's bonds in solids. c) What is bonding energy of a molecule? Explain. [4+7+4] 4. a) Distinguish between ionic and covalent bonds. b) What do you understand by Madelung constant? c) What is the nature of bonds in NaCl and diamond? (JNTU /S/2009) [8+4+4]

6. a) Compare the properties of ionic and metallic solids. (JNTU /S/2009) b) What is Madelung constant? c) Derive an expression for cohesive energy of an ionic crystal. [5+3+8] 8. a) Explain the formation of an ionic crystal, with a suitable example. (JNTU 2009) b) Derive an expression for the cohesive energy of an ionic crystal. [6+10] 9. a) Explain the formation of an ionic crystal, with a suitable example. (JNTU 2009) b) Derive an expression for the cohesive energy of an ionic crystal. [6+10] 10. a) Explain the forces between the two interacting atoms when they are brought nearer to form a molecule. (JNTU 2009) b) Derive the expression for the equilibrium spacing of two atoms for which the potential energy is minimum. [6+10]

3. 5.

The atomic packing factor of a simple cubic structure is a) 68% b) 74% c) 52% d) 24% NaCl crystal possesses ________ structure. a) FCC b) HCP c) Ionic bond d) Vanderwaals bond

(JNTU) (JNTU)

12. 13. 14. 17.

The direction parallel to [ 242] is_____ a)[142] b) [141] c)[121] d)[124] The crystal structure of silver is a) FCC b) BCC c) HCP d) None of the above Among the crystal structures, which has the highest packing fraction? a) BCC b) FCC c) Diamond cubic d) None The Miller indices of the plane having intercepts (-1/2,1,1/3) on three crystallographic axes are _ _ _ _ _ a) ( 2 1 3) b) (3 1 2) c) (2 1 3 ) d) (3 1 2 ) A plane parallel to one of the coordinate axis has an intercept of _______ a) infinite b) zero c) one d)None Name the crystal system for which a=b# c and = = =900 ____________. Name the crystal system for which a # b# c and # # # 900 __________ Give an example for a trigonal crystal system___________. PbCO3 is an example for ___________ crystal system. The Crystal systems, which are available in their primitive form is __________. Polonium has _____________structure. The number of ions in CsCl unit cell ___________.

18. 24. 25. 26. 27. 28. 29. 30.

Subjective Questions 3. a) What do you understand by Miller indices of a crystal plane? (JNTU 2010) b) Show that in a cubic crystal the spacing (d) between consecutive parallel planes of Miller indices (h k l) is given by d = a /(h2 + k2 +l2) c) NaCl crystals have FCC structure. The density of NaCl is 2.18 gm/cm2. Calculate the distance between two adjacent atoms. (Molecular weight of NaCl = 58.5). [4+7+4]

5. a) Explain the terms used in crystallography: (i) space lattice (ii) primitive cell (iii) lattice parameters. b) Derive an expression for the interplanar spacing in the case of a cubic structure. (JNTU /S/2009) c) Calculate the glancing angle of (1 1 0) plane of a cubic crystal having axial length 0.26 nm [4+8+4] corresponding to the second order diffraction maximum for the X-rays of wavelength 0.065 nm. 7. a) Explain terms used in crystallography: (JNTU /S/2009) (i) Space lattice (ii) Basis (iii) Unit cell (iv) Coordination number. b) Show that the face centred cubic structure possesses maximum packing density among cubic structures. c) Draw (1 1 2), (1 2 3), (0 1 0) and (2 2 1) crystal planes of a simple cubic crystal. [6+6+4] 11. a) Show that FCC is the most closely packed out of the three cubic structures by calculating the packing factors. (JNTU 2009) b) Describe the 3-dimensional Bravais lattices in combination with crystal systems. [6+10] 12. Describe the HCP crystal structure with a neat diagram.

UNIT- II X-ray Diffraction& Defects in Crystals

1.

2.

3. 4. 5. 6. 7. 8. 9. 10. 11. 12.

13. 14. 15. 16.

The diffraction of X-rays by crystal planes (JNTU) a) reveals the nature of X-rays b) helps to know characteristics of X-rays c) reveals the internal arrangement of atoms in the crystal d) helps to know the properties of crystals X-rays are used for diffraction studies in crystals because___ a) they electromagnetic waves b) the wavelength of X-rays is of same order as the inter-atomic spacing c) they can be scattered by ions in the lattice d) above all 0 The order of diffraction when X-rays of wavelength 1.08A diffracted at an angle 300 from crystal planes of spacing 3.24A0 is __ a) 1 b) 2 c) 3 d) 4 Braggs Law is a condition for _________ of X-rays coming out from parallel planes. a) interference b) in phase diffraction c) refraction d)None In Laue method ________is variable. a) Frequency b) wave length c) d hkl d) angle of diffraction In Powder diffraction method, the glancing angle =________. a) 4S/R b) R/4S c) S/4R d) None The powder method is also called as _____ method. a) Debye-Scherrer b) Rotating crystal c) Laue d) None The Laue spots close to the center of Laue photograph correspond to (JNTU) a) low index lines b)the low Bragg angles c)high Bragg angles d)high dhkl values The Camera used to take powder diffraction pattern as a a) Cylindrical shape b) Spherical shape c) Flat shape d) Conic shape For recording powder pattern, we should use X-rays that are a) White radiation b) monochromatic c) of very low wavelength d) of very high wavelength In powder method, the specimen used is ______ in nature. a) Single crystal (b) poly crystalline (c) Glass (d) None 2 For tetragonal crystal sin hkl=______ a) { 2/(4a2)}(h2 +k2 + l2) b) { 2/(4a2)}(h2 +k2) +( 2/(4a2)} l2 c) { 2/ (h2 +k2 + l2)}a2 d) { 2/(h2 +k2)}a2 +( 2/l2)b2 Schottky defect is associated with a) ionic pair vacancy b) interstitial c) impurity d) None Frenkel defect is associated with a) ionic pair vacancy b) impurity c) vacancy-interstitial pair d) None The quanta of mechanical vibration energy is called as ____ a) Photon b) Phonon c) Magneton d) Electron Formation energy of a vacancy is independent of______ a) Structure b) Temperature c) vibration d) None

17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29.

The relation between no. of Schottky defects per unit volume (n) and at temperature (T) is_______ (a) n =N. e-Ev/KBT (b) n =N. e-Ev/2KBT (c) N = n e-Ev/KBT (d) N = n e-Ev/2KBT The relation between no. of vacancies per unit volume (n) and at temperature (T) is_______ a) n =N. e-Ev/KBT b) n =N. e-Ev/2KBT c) N = n e-Ev/KBT d) N = n e-Ev/2KBT The creation of every vacancy _______ the energy of the crystal. a) decreases b)increases c) does not alter d) None ______ defect is dominant in alkali halides. a) Schottky defect b) Frenkel defect c) Electronic defect d) impurity ______ defect is dominant in silver halides and calcium fluoride. a) Schottky defect b) Frenkel defect c) Electronic defect d) impurity Burgers vector gives a) length of the Burgers circuit b) Magnitude and direction of Burgers vector c) magnitude and direction of of burgers circuit d) None Dislocations are a) line defects b) planar defects c) chemical defects d) point defects Burgers vector is ____ to the edge dislocation. (JNTU) a) perpendicular (b) parallel (c) equal (d) None The plane in which maximum distortion is present is called as__________. a) Dislocation b) Deviation c) Slip plane d) None of these For screw dislocation Burgers vector is _______ to the dislocation. a) Perpendicular b) parallel c) equal d) None Burgers vector defines both ______ and _________of a dislocation. a) amount, placement b) strength, energy c)volume, radius d)None Dislocation loop is a _____ a) Burgers circuit b) grain boundary c) combination of edge & screw dislocations d) None _____ refer to regions of distortions that lie about a surface having a thickness of a

30. 31. 32. 33.

few atomic diameters. a) dislocations b) distortions c) surface imperfections d) point defects Give an example for plane imperfection a) Screw dislocation b) Twin boundaries c) Schottky effect d) None of these ______ are planar surface imperfections caused by fault in the stacking sequence of atomic planes in crystals. a) stacking faults b) grain boundary t c) twin boundary d) dislocations If the atomic arrangement on one side of a boundary is the mirror reflection of the arrangement on the other side, such boundary is known as ________ a) grain boundary b) twin boundary c) stacking faults d) voids ____ is a 3-dimensional defect. a) void b) dislocation c) vacancy d) electronic defect

Subjective Questions 1. State and explain Braggs law of X-ray diffraction. (JNTU2010) 2. Describe Laue method for determination of crystal structure. 3. Explain how the X-ray diffraction can be employed to determine the crystal structure. 4. Explain Schottky and Frenkel defects with the help of suitable figures. 5. Explain the concept of edge dislocation with a neat diagram. 6. Explain the concept of Screw dislocation with a neat diagram. 7. Describe with suitable diagram, the Debye-Scherrer method for determination of crystal structure. (JNTU2010) 8. Explain the various point defects in a crystal. (JNTU2010) 9. Write a note on various applications of X-ray diffraction. 10. Discuss the importance of Burgers vector in understanding the dislocations. (JNTU2010) 11. Mention various surface defects and write a short note on them. 12. What is a volume defect? Explain various types of volume defects. (JNTU 2010) 13. Monochromatic X-rays of = 1.5 A.U. are incident on a crystal face having an interplanar spacing of 1.6 A.U. Find the highest order for which Braggs reflection maximum can be seen. 14. A beam of X-rays is incident on a NaC1 crystal with lattice spacing 0.282 nm. Calculate the wavelength of X-rays if the first order Bragg reflection takes place at a glancing angle of 8 351 , also calculate the maximum order of diffraction possible. 15. A beam of X-rays of wavelength 0.071 nm is diffracted by (110) plane of rock salt with lattice constant of 0.28 nm. Find the glancing angle for the second order diffraction. 16. The fraction of vacancy sites in a metal is 1 x 10-10 at 500C. What will be the fraction of vacancy sites at 1000C. 17. If the average energy required to create a Frenkel defect in an ionic crystal is 1.35 eV, calculate the ratio of Frenkel defects at 250C and 3500C. 18. A certain crystal reflects monochromatic X-rays strongly when Bragg's angle is 210 for the second order diffraction. Calculate the glancing angle for third order spectrum. 19. Calculate the glancing angle of (1 1 1) plane of a cubic crystal having axial length 0.19 nm corresponding to the second order diffraction maximum for the X-rays of wavelength 0.058 nm. UNIT- III Elements of Statistical Mechanics &Principles of Quantum Mechanics 1. The Maxwell-Boltzmann statistics deal with particles having ____________. (JNTU) a) integral spin b)half integral spin c) no spin d) any value of spin 2. According to Plancks quantum theory of radiation _____________ (JNTU) a) energy is emitted in the form of waves b) energy is emitted in the form of mechanical waves c) energy is emitted in the form of a continuous stream d) energy is emitted in the form of packets called photons 3. If E1 is the energy value for the ground state of an electron in a one-dimensional potential well of length L , the energy of the first excited state is equal to ___________ (JNTU) a) E1 b) 2E1 c) 4E1 d) 9E1 4. When an electron is accelerated by potential V volts, then the de Broglie wavelength is given by a) 26.26/V nm b) 2.626/V nm c) 126.26/V nm d) 1.226/V nm (JNTU) 5. Wave propagation vector for the electron of wavelength 1 A.U is__________ a) 6.28x10-10/m b) 6.28x1010/m c) 3.14x10-10/m d) 3.14x1010/m 6. In Davisson-Germer experiment, the sample used for electron diffraction is a) NaCl b) nickel c) thin film of gold d) None 7. Davisson-Germer experiment establishes a) electrons b)matter waves c) positive rays d)None 8. Charged particles will have a) spin b) Mass c) Wavelength d) All the above 9. Planks law E=___________ a) h b) C c) d) h 10. Light exhibits _____________ nature.

a) particle b) wave c) particle and wave d) none a) 1 and 2 b) 1,2 and 3 c) 2 , 3 and 4 d) all the above 11. In quantum mechanics, the energy operator a) i /x b) i /t c) i /x2 d) i /t2 12. In quantum mechanics, the momentum operator a) -i /x b) i /t c) i /x2 d) i /t2 13. Schrdinger wave equation is a) Equation of a plane wave b) Equation of a complex wave c) Equation of a spherical wave d) Equation of a cylindrical wave 14. Which of the following is true a) must be single valued b) must be continuous c) must be finite d) all the threee 15. The modulus square of the wave function is known as _________________ a) Particle density b) probability density c) normalization d) orthogonal 16. The number of quantum states present in a metal between the energies E and E+dE Per unit volume is called ______________________ (JNTU) 17. In the spectrum of black body radiation , the wavelength maximum _________ with increase in temperature. (JNTU) 18. When a potential difference of 400 volts is applied in accelerating an electron , the wavelength attained by the electron, is __________A.U. (JNTU) 19. One-dimensional time-independent schrodingers wave equation is ____________ 20. According to quantum theory the black body contains large no. of _____ having characteristic frequency . 21. Planks radiation law satisfies Wiens formula at ___________ wavelength range. 22. Planks radiation law satisfies Rayleigh Jeans formula at ________ wavelength range. 23. The Fermi-Dirac function is given as F(E) =___________________ (JNTU) 24.. The Fermi-Dirac particles possess ___________ spin and they are indistinguishable 25. According to Max Born the wave function can not be an observable quantity to predict the in space, because is a ____________ quantity. 26. The electrons in a potential well are associated with ___________ values of energy. 27. If the width of potential well is large, then the energy levels are _________ spaced. 28. Velocity of the electron accelerated by 100V is______ 29. Normalization condition is___________ 30. The wave functions n corresponding to energies En are called as __________________.

Subjective Questions 1. a) What is statistical mechanics? Write notes on Bose-Einstein statistics. (JNTU2010) b) Write notes on black body radiation. c) Calculate the energies that can be possessed by a particle of mass8.5x 10-31kg which is placed in an infinite potential box of width 10-9cm. [6+5+4] 2. a) Obtain an expression for Fermi energy at T > 0 K. (JNTU2010) b) Derive an expression for density of states of electrons. c) Write short notes on: i. De Broglie wavelength ii. Heisenberg's uncertainty principle. [4+7+4] 3. a) Explain the concept of dual nature of the light. (JNTU2010) b) Describe the experimental verification of matter waves using Davisson-Germer experiment. c) Calculate the wavelength of matter wave associated with a neutron whose kinetic energy is 1.5 times the rest mass of electron. (Given that Mass of neutron = 1.676 x 10-27 kg, Mass of electron = 9.1x10-31 kg, Planck's constant = 6.62x10-34 J-sec, Velocity of light = 3x108m/s). [4+7+4] 4. a) Explain Fermi-Dirac distribution function. Illustrate the effect of temperature on the distribution. (JNTU2010) b) Derive an expression for density of states of an atom. [8+7] 5. a) Show that the wavelength () of an electron having mass (m) and kinetic energy (E) is given by = h/2mE. (JNTU2009) b) Write a detailed note on Heisenbergs uncertainty principle. 6. a) Explain the properties of matter waves. (JNTU2009) b) Describe GP Thomsons experiment to verify the wave nature of matter. [6+10] 7. a) Discuss how Planck introduced the idea of quantum of energy, to explain the radiation of a black body. (JNTU2009) b) Write short notes on: i. de Broglie hypothesis ii. Electron diffraction. [8+8] 8. a) Write short notes on: (JNTU2009)

i. Plancks quantum theory ii. Heisenbergs uncertainty principle. b) Describe G.P.Thomsons experiment in support of de Broglies hypothesis. c) Find the wavelength associated with an electron rose to a potential 1600 V. [6+6+4] 9. a) Explain, in detail, de Broglies hypothesis. (JNTU/S/2009) b) Derive the Schrodingers wave equation for the motion of an electron. c) Find the least energy of an electron moving in one dimension in an infinitely high potential box of width 0.05 nm. [6+6+4] 10.a) What are matter waves and their properties? (JNTU/S/2009) b) Describe the experimental method to verify matter waves by Davisson-Germer experiment. c) Write notes on Heisenbergs uncertainty principle. [6+6+4] 11. a) Explain, in detail, Planks quantum theory of radiation. (JNTU/S/2009) b) Derive an expression for one-dimensional time independent Schrodingers Equation. c) Compute the lowest energy of a neutron confined to the nucleus which is considered as a box with a width of 10-14 m. [6+6+4] UNIT- IV Band Theory of Solids 1. Zone theory was given in1928 by__________________. (JNTU) a) Sommerfeld b) Planck c) Drude d) Bloch 2. In allowed energy band, the velocity of an electron is zero, at (JNTU) a) top of the band b) top and bottom of the band c) anywhere in the band d) bottom of the band 3. The effective mass of an electron, is proportional to 2 2 1 2 d 2 E d 2 E d 2 E a) 2 b) 2 c) 2 d) (JNTU) dk dk dk 2

d E d k

4. The energy gap in metals is (JNTU) a) 0 eV b) 1 eV c) 3 eV d) 6 eV 5. When a band gap is in the order of 1 eV in a solid it behaves as a _________ a) Conductor b) Semiconductor c) Insulator d) Metal 6. A solid in which the valence band is completely filled and conduction band is empty at room temperature, then it is a ________ a) Conductor b) Semiconductor c) Insulator d) None 7. The reason for formation of different energy bands in a solid is a) atomic energy levels are discrete b) overlapping of energy levels of atoms c) atoms are very close to each other in solids d) All the above 8. When the scattering power of the potential barrier is zero, the electron is__ a) completely bound b) partly bound and partly free c) completely free d) lost due to recombination 9. The function Uk (x) in the Blochs solution represents a) Periodic function b) Plane wave solution c) constant function d) None 10. The width of allowed band ___________ with increasing binding energy of the electrons. a) increases b) decreases c) remains constant d) can not be determined 11. The electrons in a periodic potential move with _______ mass. (JNTU) 12. The first Brillouins zone extends from ____________ to ____________. (JNTU) 13. Bloch theorem mathematically expressed as _____________________. 14. According to Bloch model, electrons PE changes with the ____________ of the lattice 15. According to Kronig-Penney model the motion of an electron in a periodic potential is characterized by ____________________. 16. The E-K diagram for a free electron is in the shape of a ________________. 17. The product V0b is known as _________________________ 18. The energy of free electron when P is given as E=____________. 19. The velocity of electron in terms of dE/dK is given as ________________. 20. When velocity of an electron is maximum then its effective mass is ________________. Subjective Questions 1. a) Discuss the band theory of solids and explain the formation of bands and concept of holes. b) What is effective mass of an electron? Derive an expression for the effective mass of an electron. (9+6) (JNTU 2010) 2. a) Using Kronig-Penney model show that the energy spectrum of an electron (JNTU2010) contains a number of allowed energy bands separated by forbidden bands. b) Define effective mass of an electron. Explain its physical significance. [9+6] 3. a) What is Bloch theorem? Explain. (JNTU2010)

b) Write the conclusions given by Kronig-Penney model. c) For an electron under motion in a periodic potential, plot the curve between the effective mass of the electron and wave number, and explain. [5+5+5] 4. a) What are Brillouin zones? Explain using E-K diagram. (JNTU2010) b) Define effective mass of an electron. Explain its physical significance. c) What is a hole? List out the properties of a hole. [5+5+5] 5. Calculate the free electron concentration, mobility and drift velocity of electrons in aluminum wire of length of 5 m and resistance 0.06 carrying a current of 15 A, assuming that each aluminum atom contributes 3 free electrons for conduction. Given: Resistivity for aluminum = 2.7x 10-8 - m, Atomic weight = 26.98, Density = 2.7x 103 kg/ m3 and Avogadro number = 6.025 x 1023. 6. What is Fermi level? 7. Explain Fermi-Dirac distribution for electrons in a metal. Discuss its variation with temperature. 8. How does the electrical resistance of the metal change with temperature? 9. Find the relaxation time of conduction electrons in a metal resistivity 1.54 x 10-8 Ohm-m, if the metal has 5.8x 1028 conduction electrons per m3. 10. Discuss the motion of an electron in a periodic lattice. 11. Explain the origin of energy bands in solids. 12. Assuming the electron lattice interaction to be responsible for scattering of conduction electrons in a metal, obtain an expression for conductivity in terms of relaxation time and explain any three drawbacks of classical theory of free electrons. 13. Find the temperature at which there is 1% probability of a state with energy 0.5 eV above Fermi energy. 14. Discuss the origin of electrical resistance in metals. 15. Show that the resistivity of a metal above room temperature varies directly with temperature. 16. Distinguish between conductors, Insulators and semiconductors on the basis of band theory of solids. UNIT- V Semiconductor Physics & Physics of semiconductor devices 1. An example for direct band gap semiconductor is (JNTU) a) Ge b) GaAs c) Si d) SiO 2. If the Hall coefficient is negative, then the semiconductor is (JNTU) a) Intrinsic b) P-type c) N-type d) Extrinsic 3. The Fermi level of intrinsic semiconductor raises slightly with the increase of temperature, because a) the effective mass of electron is greater than the effective mass of hole b) the mass of hole is greater than the mass of electron c) the effective mass of hole is greater than the effective mass of electron d) the mass of electron is greater than the mass of hole

4. Application of forward bias to a junction diode reduces a) the minority carrier current to zero b) the majority carrier current to zero c) potential barrier d) the current to zero 5. The infrared LED finds application in (JNTU) a) Test instruments b) burglars alarm c) pocket calculators d) display board 6. At 0 K ,the Fermi level in a N-type semiconductor lies a) near valence band b) near conduction band c) exactly at the middle of the energy gap d) None 7. The sum of probabilities to find an electron and hole is equal to a) b) < c)1 d)0 8. Hall effect results in a) transverse electric field b) high resistivity c) high conductivity d) high concentration of holes 9. Which of the following materials can be used to make a LED a) Si b) Ge c) Boron d) GaAs 10. In a semiconductor a) holes do no diffuse b) electrons do not diffuse c) holes do not drift d) electrons and holes drift and diffuse 11. For Ge at room temperature, the intrinsic concentration is 2.5x1013/cm3. The donor impurity concentration is 5x 1015/cm3. Then the hole concentration in the semiconductor is____________ 12. Under equilibrium conditions, the rate of generation of holes in a semiconductor is equal to the rate of loss due to recombination. The equation relating the generation rate and loss rate is known as___________ 13. The recombination produces a layer, at PN junction, is called___________

14. The rectification efficiency of a half wave rectifier is_____________ 15. The merging of an electron and hole is called_________ 16. The temperature coefficient of resistance for a semiconductor is always________. 17. The cut in voltage of a silicon diode is________ 18. The current gain of an avalanche photo diode is __________. 19. The concept of rotation of plane of polarization of light is used in _________. 20. In a photo diode photons are absorbed with in the __________________. Subjective Questions 1. a) Derive an expression for density of electrons in intrinsic semiconductors. (JNTU2010) b) Explain the variation of Fermi level with temperature in the case of p-type semiconductors. c) If the effective mass of holes in a semiconductor is 5 times that of electrons, at what temperature would the Fermi level be shifted by 15% from the middle of the forbidden energy gap? [Given that the energy gap for the semiconductor is 1.20 eV] [7+4+4] 2. a) Derive an expression for carrier concentration of p-type semiconductors. (JNTU2010) b) Explain Hall effect and its importance. c) For a semiconductor, the Hall coeffcient is -6.85 x10-5 m3/coulomb, and electrical conductivity is 250 mho m-1. Calculate the density and mobility of the charge carriers. [7+4+4] 3. a) Show that the application of forward bias voltage across p-n junction causes (JNTU2010) an exponential increase in number of charge carriers in opposite regions. b) Write notes on Liquid Crystal Display". c) The current in a p-n junction at 270C, is 0.18 A when a large reverse bias voltage is applied. Calculate the current when a forward bias of 0.98 V is applied. [7+4+4] 4. a) Distinguish between intrinsic and extrinsic semicondutors. (JNTU2010) b) Derive an expression for the density of holes in the valence band of an intrinsic semiconductor. [7+8] 5. a) Explain Hall effect in semiconductors, and its importance. (JNTU2010) b) In a Hall experiment, a current of 25 A is passed through a long foil of silver which is 0.1 mm thick and 3.0 cm wide. If the magnetic field of flux density 0.14 wb/m2 is applied perpendicular to the foil, calculate the Hall voltage developed and estimate the mobility of electrons in silver. The conductivity of silver is 6.8 107 ohm1m1 and the Hall coefficient is -8.4 1011m3/coul.[10+6] 6. a) Derive an expression for the carrier concentration of an intrinsic (JNTU2010) semiconductor. b) Find the resistance of an intrinsic germanium rod 1.0 cm long, 1.0 mm wide and 1.0 mm thick at 300 K. The intrinsic carrier density is 2.5 1019 per m3 at 300 K, and the mobility of electrons and holes are 0.39 and 0.19 m2 V1 s1 respectively. [10+6]

7. a) Write a note on intrinsic semiconductors. (JNTU2010) b) Derive an expression for the number of electrons per unit volume in the conduction band of an intrinsic semiconductor. [6+10] 8. a) Explain the effect of temperature on resistivity of a semiconductor b) Derive an expression for the number of electrons per unit volume in the conduction band of an intrinsic semiconductor. c) Find the diffusion coefficient of electrons in silicon at 300 K if e is 0.19 m2/V-S. 9. a) Derive the continuity equation for electrons. b) What physical law is manifested in the continuity equation? 10. a) Distinguish between metals, semiconductors and insulators. b) Distinguish between intrinsic and extrinsic impurity semiconductors with suitable examples. 11. a) Derive an expression for the density of holes in the valence band of an intrinsic semiconductor. b) The following data are given for intrinsic germanium at 300 K ni=2.4 x 1019/m3, e=0.39 m2/V-S, p = 0.19 m2/V-S. Calculate the resistivity of the sample. 12. a) Explain n-type and p-type semiconductors. Indicate on an energy level diagram the conduction and valence bands, donor and acceptor levels for an intrinsic and extrinsic semiconductors. b) Explain the detailed mechanism of current conduction in n and p type semiconductors. 13. a) Explain Hall effect? b) Show that for a n-type semiconductor the Hall coefficient RH = -1/ne

c) The RH of a specimen is 3.66 x 10-4m3c-1. Its resistivity is 8.93 x 10-3 Ohm-m find and n. 14. a) Explain the applications of Hall Effect. b) Write a note on Diffusion length. 15. a) The resistivity of an intrinsic semiconductor is 4.5 ohm-m at 20C and 2.0 Ohm m at 32C. What is the energy band gap? b) Explain the effect of temperature and doping concentration on the Fermi-level in a semiconductor. 16.a) Find the conductivity of intrinsic silicon at 300K. It is given that ni at 300K in silicon is 1.5 x 1016/m3 and the mobilities of electrons and holes in silicon are 0.13m2/V-S and 0.05m2/V-S respectively b).If donor type impurity is added to the extent of one impurity atom in 108 silicon atoms, find the conductivity c) If acceptor type impurity is added to the extent of one impurity atom is 10 8 silicon atoms, find the conductivity. UNIT- VI Dielectric Properties & Magnetic Properties 1. The magnetic susceptibility of a superconductor is (JNTU) a) 1 b) zero c) +1 d) Infinity 2. The ionic polarization in a dielectric material (JNTU) a) decreases with increase of temperature b) increases with temperature c) may increase or decrease with temperature d) is independent of temperature 3. The expression for internal field (Ei) is given by (JNTU) a) E + 3
P
0

b) P + 3

c) E 3

d) P + 3

4. Magnetization per unit magnetic field intensity is called magnetic (JNTU) a) induction b) strength c) susceptibility d) permeability 5. The magnetic induction 8.2 10-3 web/m2 is equal to (JNTU) -3 -3 a) 8.2 10 tesla b) 8.2 10 henry/m c) 4.1 10-3 tesla d) 4.1 10-3 web 6. The orientation Polarizability is __________temperature. (JNTU) a) Directly proportional b) inversely proportional c) independent of d) None 7. Above Curie temperature, the ferromagnetic material exhibits B-H curve in the form of a) straight line b) exponentially increasing magnetization c) B H loop d) exponentially decreasing curve 8. The area of hysteris loop is (JNTU) a) Directly proportional to energy loss b) Inversely proportional to energy loss c) Independent of energy loss d) None 9. The Ferro electric material losses spontaneous polarization at (JNTU) a) 0 K b) Curie Temperature c) Room temperature d) 100 K 10. The magnetic flux coming out from a persistant circuit is quantized in terms of (JNTU) a) h/4e b) h/2e c) 4h/e d) 2h/e 11. The unit for permittivity of free space is ___________________ (JNTU) 12. _____________ of a spinning electron is taken as one unit called the Bohr magneton. 13. A field of strength 40 amp/metre produces a magnetization 800 amp/metre in a ferromagnetic material. The relative permeability of the material is ________ (JNTU) 14. The mathematical expression for Bohr magneton is _______________ 15. Manganese is an example for _____________ magnetic material. (JNTU) 16. The unit for electric dipole moment is ______________________ 17. The induced electric dipole moment per unit volume of a dielectric is called ___________ 18. Alnico alloy is an example for ___________ magnetic material. 19. Pyroelectrics are useful as ___________detectors. 20. The total electric field at an atom site is known as _______________ Subjective Questions 1.a) What is Meissner effect? Explain, in detail. (JNTU2010) b) Distinguish a super-conductor and a normal metal, both maintained at same temperature. c) Write notes on magnetic levitation. [5+5+5] 2. a) Define the terms magnetic induction (B), magnetization (M) and magnetic field (H). Obtain an expression relating to these quantities. (JNTU2010) b) What are ferrites? Prove that ferrites are superior to ferromagnetic materials. Write the applications of ferrites. c) The magnetic susceptibility of aluminum is 2.3x10-5. Find its permeability and relative permeability. [6+5+4] 3. a) Define magnetic moment. What is Bohr magneton? Explain. (JNTU2010) b) What are the characteristics of diamagnetic, paramagnetic and ferromagnetic substances?

Explain their behavior with the help of examples. c) If a magnetic field of strength 300 amp/metre produces a magnetization of 4200 A/m in a ferromagnetic material, find the relative permeability of the material. [3+9+3] 4. a) Explain the terms: (JNTU2010) i. Magnetic induction ii. Magnetic susceptibility iii. Permeability of a medium iv. Intensity of magnetization. b) What are hard and soft magnetic materials? Give their characteristic properties and applications. c) A paramagnetic material has a magnetic field intensity of 104 amp/m. If the susceptibility of the material at room temperature is 3.7 x 10-3. Calculate the magnetization and flux density of the material. [6+5+4] 5. a) Explain the following: [6+10] (JNTU2009) i. Electric Polarization ii. Polarization vector iii. Electric displacement iv. Polarizability. b) What is local field in a dielectric material? Derive an expression for it by Lorentz method. 6. a) What are the sources of permanent dipole moment in magnetic materials? (JNTU2009) b) Explain the hysteresis loop observed in Ferro-magnetic materials. c) Write notes on Ferro-electricity. [6+6+4] 7. a) What is superconductivity? Explain the effect of temperature and strength of magnetic field on a superconducting material. (JNTU2009) b) Write a note on Meissner effect relating to superconductivity. c) The transition temperature for lead is 8.7 K. The maximum critical field for the material is 6 105 A/m. If lead is to be used as a superconductor at 3106 A/m, find the corresponding temperature. [6+6+4] 8. a) Explain the origin of magnetic moment. Find the magnetic dipole moments due to orbital and spin motions of an electron. (JNTU2009) b) How materials are classified as dia, para and ferromagnetic? Explain. [8+8] 9. a) Describe the phenomenon of electronic polarization and obtain an expression for electronic polarizability. (JNTU2009) b) The dielectric constant of helium at 0 0C is 1.000074. The density of atoms is 2.7 1025 per m3. Calculate the dipole moment induced in each atom when the gas is in an electric field of 3 104 V/m. [permittivity of free space = 8.85 1012 F/m] [10+6] 10.a) What is meant by polarization mechanism in dielectrics? Discuss the different polarization mechanisms in dielectrics. (JNTU/S/2009) b) Distinguish between ferroelectricity and piezoelectricity. [10+6] 11.a) Explain the term relative permittivity of a dielectric medium. (JNTU/S/2009) b) What is complex dielectric constant? How does it vary with frequency of the applied electric field? c) An atom of oxygen on being polarized produces a dipole moment of 0.5 10-22 C-m. If the distance of the center of negative charge cloud from the nucleus be 4 10-15 cm, calculate the polarizability of the oxygen atom. [4+8+4]

12.a) Give an account of the phenomenon of superconductivity. (JNTU/S/2009) b) Why a superconductor is termed as a perfect diamagnetic material? c) Write notes on flux quantization. [6+6+4] 13.a) Define the terms: (JNTU/S/2009) (i) magnetizing field (ii) intensity of magnetization, (iii) magnetic susceptibility (iv) permeability. b) What are the characteristics of diamagnetic, paramagnetic and ferromagnetic substances? Explain their behavior with the help of examples. [6+10] 14.a) Explain in detail the following: (i) Meissner effect (ii) penetration depth relating to superconductors. (JNTU/S/2009) b) What is meant by superconductivity? Explain. c) Discuss the important applications of superconductors. 15. a) Explain the terms: (JNTU/S/2009) (i) Magnetic induction (ii) Magnetic susceptibility (iii) Permeability and (iv) Intensity of magnetization. b) What is ferromagnetism? Draw hysteresis curve and explain. c) A magnetic material has a magnetization of 3300 amp/m and flux density of 0.0044 weber/m2. Calculate the magnetizing force and the relative permeability of the material. [6+6+4] 16.a) With usual notation show P = 0( r 1 ) E. b) What is dipolar relaxation ? Discuss the frequency dependence of orientation polarization. c)A solid elemental dielectric, with density 3 x 1028 atoms /m3 shows an electronic polarizability of 10-40 farad m2, Assuming the internal electric field to be a Lorentz field. Calculate the dielectric constant of the material. 17. Explain Clausius-Mosotti relation in dielectrics subjected to static fields. 18. Discuss in detail the origin of ferroelectricity in Barium titanate.

UNIT- VII Lasers & Fiber Optics 1. Which of the following is coherent ? a)spontaneous emission b)stimulated emission c)both d) none 2. Laser action is found in which of the following semiconductors ? a)direct band gap b)indirect band gap c)silicon d) intrinsic 3. The pumping process used in ruby laser is a)optical pumping b)electric discharge c)forward bias d)chemical reaction 4. Total internal reflection takes place when light ray travels from a)denser to rarer b)denser to denser c)rarer to rarer d)rarer to denser medium 5. The refractive index of the core is a) greater than the cladding b)less than the cladding c)equal to the cladding d)all 6. In step index fibers ,the signals travel in a a)random manner b)zigzag manner c)skew manner d)linear manner 7. In conventional light sources the ratio of spontaneous to stimulated emission rate is nearly a)1010 b) 1020 c)105 d)103 8. Intermodal dispersion is negligible in______ fiber. a) multimode step index b) monomode graded index c) monomode step index d) multimode graded index 9. Under population inversion, the no. of in the higher energy state is____ than the lower energy state. a) lesser b) larger c) a and b d) none 10. Because of ______laser beam can be used for communication between earth and moon or other satellites. a) high coherence b) narrow angular spread c) monochromaticity d) intensity 11. The rate of absoption process is proportional to _______________ 12. In He-Ne laser ,the ratio of He and Ne gas mixture is ______________ 13. The laser used for pollution monitoring and remote sensing applications is_____ 14. The wavelength of emitted beam from a CO2 laser is______ 15. In graded index fibers, the refractive index of the core varies ____ with radial distance. 16. According to Boltzmann distribution, the number of atoms(Ni) in an energy level (Ei) is given by____________. 17. The lifetime of an atom in the ground state is ___________. 18. In a Ruby laser the resonator cavity is a _________ reflector. 19. To amplify the optical signals in their passage through the fiber ______ are used. 20. The signal attenuation in the optical fibers is because of _______ and ___________.

Subjective Questions 1.a) Explain the characteristics of a laser beam. (JNTU2010) b) Describe the construction of He-Ne laser and discuss with relevant ELD, the working of He-Ne laser. c) What are the differences between a laser diode and an LED? [4+7+4] 2.a) Discuss the propagation mechanism of light waves in optical fibers. (JNTU2010) b) Derive the expression for the numerical aperture of an optical fiber. c) A step index _ber has a numerical aperture of 0.16, and core refractive index of 1.45. Calculate the acceptance angle of the fiber and the refractive index of the cladding. [5+6+4] 3.a) Explain the principle behind the functioning of an optical fiber. (JNTU2010) b) Derive an expression for numerical aperture of an optical fiber. c) Write any three applications of optical fibers. [4+7+4] 4.a) Derive the expressions for: (JNTU2010) i. Acceptance angle ii. Numerical aperture of an optical fiber. b) Describe the different types of fibers by giving the refractive index profiles and propagation details. [8+7] 5. a) Explain the characteristics of a laser beam. (JNTU/S/2009) b) Describe, with necessary diagrams, the construction and working of a He-Ne laser. c) Discuss how lasers are helpful in induced fusion and isotope separation processes. 6.a) Distinguish between spontaneous emission and stimulated emission of radiation. b) Explain the following terms: (i) population inversion and (ii) pumping. (JNTU/S/2009) c) Describe with a neat sketch, the construction and working of a semiconductor Laser. [4+6+6] 7.a) Derive an expression for the numerical aperture and the fractional index change of an optical fiber. (JNTU/S/2009) b) Explain the advantages of optical communication system. c) The numerical aperture of an optical fiber is 0.39. If the difference in the refractive indices

of the material of its core and the cladding is 0.05, calculate the refractive index of the core material. [4+8+4] 8.a) Obtain the equation for the equilibrium condition of absorption and emission of radiation by atoms, and hence explain the term Einsteins coefficients. (JNTU/S/2009) b) Describe with necessary diagrams, the construction and working of a ruby laser. [8+8] 9.a) Distinguish between step index fiber and graded index fiber. (JNTU/S/2009) b) Describe the various advantages of communication with optical fibers over the conventional coaxial cables. c) Calculate the refractive indices of core and cladding of an optical fiber with a numerical aperture of 0.33 and their fractional difference of refractive indices being 0.02. [6+6+4] 10.a) Discuss various methods of pumping mechanisms to achieve population inversion. b) Describe the construction and working of CO2laser. (JNTU/S/2009) c) Write the applications of lasers in industry. [6+6+4] 11.a) Explain the principle behind the functioning of an optical fiber. (JNTU/S/2009) b) Derive an expression for acceptance angle for an optical fiber. How is it related to numerical aperture? c) An optical fiber has a numerical aperture of 0.20 and a cladding refractive index of 1.59. Find the acceptance angle for the fiber in water which has a refractive index of 1.33. [4+8+4] 12.a) Explain the characteristics of a LASER. (JNTU2009) b) Describe the construction and working of GaAs semiconductor laser. c) Write any four applications of laser. [4+8+4] 13.a) What are the differences between photography and holography? (JNTU2009) b) What is the basic principle of holography? Explain. c) Write the applications of holography. [4+6+6] 14.a) Explain the characteristics of a LASER. (JNTU2009) b) Describe the construction and working of GaAs semiconductor laser. c) Write any four applications of laser. [4+8+4] 15.a) What are important features of optical fibers? (JNTU2009) b) Describe the communication process using optical fibers. c) Write the uses of fiber optics in different fields. [4+6+6] (JNTU2009) 16.a) Explain the need of a cavity resonator in a laser. (JNTU2009) b) With the help of a suitable diagram describe the construction and working of a semiconductor laser. c) Write any four applications of laser. [4+8+4] 17.a) What are important features of optical fibers? (JNTU2009) b) Describe the communication process using optical fibers. c) Write the uses of fiber optics in different fields. [4+6+6]

18.a) Explain the purpose of an active medium in a gas laser. (JNTU2009) b) With the help of a suitable diagram, explain the principle, construction and working of a semi conductor laser. c) Calculate the wavelength of emitted radiation from a homo-junction semiconductor diode laser, which has a band gap of 1.44 eV. [4+8+4] 19. a) Define the relative refractive index difference of an optical fiber. How it is related to numerical aperture? (JNTU2009) b) Draw the block diagram of an optical fiber communication system and explain the function of each block. [6+10] UNIT- VIII Acoustics of Buildings and Acoustic Quieting & Nanotechnology 1. The chemical reactivity in nanomaterials increases due to (JNTU) a) Increase in surface area b) decrease in volume c) Both due to increase in surface area and decrease in volume d)None 2. Which of the following synthesis methods are used for preparation of nanotubes? (JNTU) a) Discharge b) Laser ablation c) Chemical vapour deposition d) All 3. Which of the following properties are more for nanomaterials? (JNTU) Chemical reactivity b) Electrical conductivity c) optical conductivity d) All 4. Fullerene is a) Carbon molecule with atoms arranged in a spherical shape b) thin film of polymer c) another form of diamond d) graphite sheets 5. The resolution of TEM is much higher than light microscopes, because

a)

a) the magnetic field is very high b) in TEM UV- radiation is used c) the debroglie wavelength of electron is smaller than light d) All 6. Which are the sound absorbing materials in the following? a) Glasses b) carpets c) polished surfaces d) stones 7. Acoustic quieting deals with the _ a) Reduction of machinery sound b) Reduction of machinery vibration c) Redirection of sound d) All 8. The echo is produced due to reaching of direct sound a) Along with reflected sound b) After reflected sound c) Before reflected sound d) None 9. A cinema hall a volume of 7500 m3. To have a reverberation time of 1.5 sec, the total absorption in the hall should be a) 5000 OWU b)750 OWU c)1500 OWU d) 825 OWU 10. In acoustically good theatre, the number of audience should be a) minimum b) maximum c) optimum d) Irrelevant of the above 11. The reverberation time is the time required for the sound intensity to drop by___ decibels. 12. Absorption coefficient of human body is______________ O.W.U. 13. Optimum reverberation time for music is _______sec. 14. The absorption coefficient is higher at ____________ frequencies. 15. The prevention of the transmission of noise inside or outside the hall is known as _______ 16. The melting point _______with the decrease of size in nanomaterials. 17. The ionization potential is __________in nanomaterials when compared with the bulk. 18. The domain size in a nanomaterial is ______ nm. 19. A three dimensional nanomaterial is called as _____________ (JNTU) 20. Agglomeration of particles is a stage in _________ process. (JNTU) Subjective Questions 1. a) b) c) 2.a) b) 3.a) b) 4.a) b) 5.a) b) 6. a) b) What is the meaning of nanotechnology? Explain. (JNTU2010) Describe the processes of sol-gel" and precipitation" in the fabrication of nanostructures. Write the applications of nanotechnology in Electronic Industry. [4+7+4] Describe the top-down methods by which nanomaterials are fabricated. (JNTU2010) Explain how X-ray diffraction can be used to characterize nanoparticles. [9+6] Describe any three processes by which nanomaterials are fabricated. (JNTU2010) Describe the important applications of nanotechnology. [9+6] Describe the different methods of acoustic quieting. (JNTU2010) Describe various method to achieve soundproofing. [7+8] Write a detailed note on nanoscience and nanotechnology. (JNTU/S/2009) Write the important applications of nanomaterials in medicine. [10+6] Write a detailed note on nanoscience. (JNTU/S/2009) Why nanomaterials exhibit different properties? Explain. [6+10]

7.a) b) 8.a) b) 9.a) b) c) 10.a) b) c)

11.a) b)

12.a) b)

Write the physical and chemical properties of nanomaterials. (JNTU2009) Describe the important applications of nanotechnology. [10+6] What are nanomaterials? Why do they exhibit different properties? (JNTU2009) Describe the various processes by which nanomaterials are fabricated. [6+10] Derive Sabines formula for reverberation time. Define the term coefficient of absorption and write short notes on it. A hall has dimensions 20 15 5 m3. The reverberation time is 3.5 sec. calculate the total absorption of its surfaces and the average absorption coefficient. [6+6+4] Explain the term Reverberation of sound in the case of an auditorium and hence define the period of reverberation. Derive Sabines formula for period of reverberation. The volume of an auditorium is 9500 cubic meters. The period of reverberation is found to be 1.5 sec. Calculate the total absorption in the auditorium. If the floor of the auditorium is now covered with carpets where by the total absorption is found to have increased by 100 sabines, calculate the new period of reverberation. [4+6+6] State the acoustic requirements of a good hall. Explain how these requirements can be achieved. A concert hall has a volume of 2265 m3 and its total absorption is equivalent to 92.9 m2. How many persons should be seated in the hall so that the reverberation time becomes 2 seconds? Given that the absorption area of one person is equivalent to 18.6 m2 of open window. Calculate the reverberation time of the empty hall, also. [10+6] Explain the various factors affecting architectural acoustics and their remedies. A hall has a volume of 7500 m3. The total absorption in the hall is 800 O.W.U. Estimate the reverberation time of that hall. [12+4]

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