CNY64/ CNY65/ CNY66

Vishay Semiconductors

Optocoupler with Phototransistor Output

Description
The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and output for highest safety requirements of > 3 mm.

Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

D For appl. class I IV at mains voltage 300 V D For appl. class I IV at mains voltage 600 V D For appl. class I III at mains voltage 1000 V
according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

14832

A (+)

C ()

VDE Standards
These couplers perform safety functions according to the following equipment standards:

D VDE 0884
Optocoupler for electrical safety requirements

D IEC 950/EN 60950 D VDE 0804 D IEC 65

Safety for mains-operated electronic and related household apparatus Office machines (applied for reinforced isolation for mains voltage 400 VRMS)

Telecommunication apparatus and data processing

D VDE 0700/IEC 335

Household equipment

D VDE 0160
Electronic equipment for electrical power installation

D VDE 0750/IEC 601

Medical equipment

Rev. A4, 11Jan99

95 10850

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CNY64/ CNY65/ CNY66

Vishay Semiconductors Order Instruction
Ordering Code CNY64/ CNY65/ CNY66 CNY64A/ CNY65A CNY64B/ CNY65B CTR Ranking 50 to 300% 63 to 125% 100 to 200% Remarks

Features
Approvals:

D Rated insulation voltage (RMS includes DC)

VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 200 D Thickness through insulation > 3 mm D Coupling Systems: CNY64 Coupling System H, CNY65 Coupling System J, CNY66 Coupling System K,

D Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

D VDE 0884, Certificate number 76814

VDE 0884 related features:

D Rated impulse voltage (transient overvoltage)

VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak

Absolute Maximum Ratings

Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 5 75 1.5 120 100 Unit V mA A mW C

tp 10 ms Tamb 25C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 32 7 50 100 130 100 Unit V V mA mA mW C

tp/T = 0.5, tp 10 ms Tamb 25C

Coupler
Parameter AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Value 8.2 250 55 to +85 55 to +100 260 Unit kV mW C C C

2 mm from case, t 10 s

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Rev. A4, 11Jan99

CNY64/ CNY65/ CNY66

Vishay Semiconductors Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA

200

Coupler
Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF

110 0.3

Current Transfer Ratio (CTR)

Parameter IC/IF Test Conditions VCE = 5 V, IF = 10 mA Type CNY64, CNY65, CNY66 CNY64A, CNY65A CNY64B, CNY65B Symbol CTR Min. 0.5 Typ. 1 Max. 3 Unit

CTR CTR

0.63 1

1.25 2

Rev. A4, 11Jan99

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CNY64/ CNY65/ CNY66

Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Input (Emitter)
Parameters Forward current Test Conditions Symbol Isi Value 120 Unit mA

Output (Detector)
Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 250 Unit mW

Coupler
Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 8 180 Unit kV C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Partial discharge test voltage 100%, ttest = 1 s Routine test Partial discharge test voltage tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 180C
(construction test only)
VIOTM

Symbol Vpd VIOTM Vpd RIO RIO RIO

Min. 2.8 8 2.2 1012 1011 109

Typ.

Max.

Unit kV kV kV

W W W

250 225 200 175 150 125 100 75 50 25 0 0

95 10922

Psi (mW)

t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM

Isi (mA)

t3 ttest t4 t1 tTr = 60 s t2 tstres t

25

50

75

100 125 150 175 200 Tamb ( C )

13930

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to DIN VDE 0884

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Rev. A4, 11Jan99

CNY64/ CNY65/ CNY66

Vishay Semiconductors Switching Characteristics
Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 ( (see figure 3) g )

VS = 5 V, IF = 10 mA, RL = 1 k

W ( figure 4) (see g )

Symbol td tr tf ts ton toff ton toff

Typ. 2.6 2.4 2.7 0.3 5.0 3.0 25.0 42.5

Unit s s s s s s s s

m m m m m m m m

IF RG = 50 tp 0.01 T

IF

+5V IC = 5 mA; Adjusted trough input amplitude IF 0 tp IC Oscilloscope RL 1 M CL 20 pF

96 11698

tp = 50 ms Channel I 100% 90%

50
95 10900

100

Channel II

Figure 3. Test circuit, non-saturated operation

10% 0 tr td ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf

IF RG = 50 tp 0.01 T

IF = 10 mA

+5V IC

storage time fall time turn-off time

tp = 50 s Channel I Oscilloscope RL 1 M CL 20 pF

Figure 5. Switching times

50
95 10843

Channel II 1k

Figure 4. Test circuit, saturated operation

Rev. A4, 11Jan99

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CNY64/ CNY65/ CNY66

Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
200 P tot Total Power Dissipation ( mW ) 160 1000 VCE=20V IF=0 100

120 Coupled Device 80 Phototransistor IR-Diode

ICEO Collector Dark Current, with open Base ( nA ) 100

10

40 0 0

1 25 50 75 0
96 12000

10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( C )

95 11003

Tamb Ambient Temperature ( C )

Figure 6. Total Power Dissipation vs. Ambient Temperature

1000.0 IC Collector Current ( mA )

Figure 9. Collector Dark Current vs. Ambient Temperature

100 VCE=5V 10

I F Forward Current ( mA )

100.0

10.0

1.0

0.1

0.1 0
96 11862

0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )
95 11012

0.1

10

100

IF Forward Current ( mA )

Figure 7. Forward Current vs. Forward Voltage

CTR rel Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 30 20 10 0 10 20 30 40 50 60 70 80 Tamb Ambient Temperature ( C ) VCE=5V IF=10mA

Figure 10. Collector Current vs. Forward Current

100 IF=50mA IC Collector Current ( mA ) 10mA 10 5mA

2mA 1 1mA

0.1 0.1
95 11013

96 11911

10

100

Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature

VCE Collector Emitter Voltage ( V )

Figure 11. Collector Current vs. Collector Emitter Voltage

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CNY64/ CNY65/ CNY66

Vishay Semiconductors
V CEsat Collector Emitter Saturation Voltage ( V ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 IC Collector Current ( mA ) 10% 100
95 11017

t on / t off Turn on / Turn off Time ( m s )

50 toff 40

CTR=50%

30 ton Saturated Operation VS=5V RL=1k

20 10 0 0 5 10

20%

15

20

96 11912

IF Forward Current ( mA )

Figure 12. Collector Emitter Saturation Voltage vs. Collector Current

1000 CTR Current Transfer Ratio ( % ) VCE=5V 100

Figure 14. Turn on / off Time vs. Forward Current

t on / t off Turn on / Turn off Time ( s )

20 ton 15 Non Saturated Operation VS=5V RL=100

10

toff

10

1 0.1
95 11015

0 1 10 100
95 11016

10

IF Forward Current ( mA )

IC Collector Current ( mA )

Figure 13. Current Transfer Ratio vs. Forward Current

Type

Figure 15. Turn on / off Time vs. Collector Current

CNY65
Date Code (YM)

918 J TK19 V 0884 D E

Coupling System Indicator Company Logo
15089

Production Location Safety Logo

Figure 16. Marking example

Rev. A4, 11Jan99

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CNY64/ CNY65/ CNY66

Vishay Semiconductors Dimensions of CNY64 in mm

weight: creepage distance: air path:

ca. 0.73 g 9.5 mm 9.5 mm

y y

after mounting on PC board

14765

Dimensions of CNY65 in mm

weight: creepage distance: air path:

ca. 1.40 g 14 mm 14 mm

y y

after mounting on PC board

14763

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Rev. A4, 11Jan99

CNY64/ CNY65/ CNY66

Vishay Semiconductors Dimensions of CNY66 in mm

weight: creepage distance: air path:

ca. 1.70 g 17 mm 17 mm

y y

after mounting on PC board

14764

Rev. A4, 11Jan99

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CNY64/ CNY65/ CNY66

Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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Rev. A4, 11Jan99

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.