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=
2
2
ds
ds t gs ds
V
V V V I 0<Vgs<Vgs-Vt
| |
ds t gs
V V V When Vds << Vgs-Vt
(3) Saturation region
( )
2
2
t gs
ds
V V
I
= , 0< Vgs-Vt<Vds
Vd at which the device becomes saturated is called Vdsat
(drain saturation voltage)
9
: MOS transistor gain factor
Function of (1) process parameter (2) device geometry
(1) g = effective mobility of the carrier in the channel
(2) ` = permittivity of the gate oxide
(3) t
ox
= thickness of the gate oxide
Note:
ox
ox
C
t
=
=>
|
.
|
\
|
=
L
W
C
ox
u
Example
Typical CMOS
(~1g ) process
(1) g
n
=500 cm
2
/V-sec
(2) ` =3.9`
0
=3.9*8.85*10
-14
F/cm (permittivity of SiO
2
)
(3) t
ox
=200
2
/ 5 . 88 V
L
W
L
W
t
ox
n
=
|
.
|
\
|
= u
u
2
2
9 . 31
sec
180
V
L
W
V
cm
p p
= =>
=
u
u
8 . 2 =
p
N
\
|
= 1
2
2
With
ox
t
K
u
= : process gain factor
f :channel length modulation factor (0.02V
-1
to 0.005 V
-1
)
(In SPICE level 1 : f =LAMBDA)
B. Drain punchthrough (avalanche breakdown)
V
D
is very high , Ids is independent of Vgs
Good for I/O protection circuit.
11
C. Threshold voltage (Vt) Body effect (Vsb)
( )
ox
SB b A si
b fb
C
V qN
V Vt
+
+ + =
2 2
2
=> | |
b SB b t t
V V V 2 2
0
+ + =
(1) Vsb : Substrate bias
(2) Vt0 : Vt at Vsb=0
(3) ^ : a constant which describes the substrate bias effect
(range:0.4~1.2)
A si
ox
A si
ox
ox
N q
C
N q
t
2
1
2 = =
(4) SPICE
: GAMMA in SPICE model
Vto : VT0
N
A
: NSUB
s
= 2r
b
: PHI (the surface potential at the onset of strong
inversion)
Subthreshold region
Cut-off = subthreshold region
Ids0 (Subthreshold region)
But the finite value of Ids may be used to construct very low
power circuits.
In Level 1 SPICE , subthreshold current is set 0
Others:
- Mobility variation
- Fowler-Nordheim Tunneling
- Impact Ionization (Hot electrons effect)
12
2.2.3 MOS Models
MOS model = Ideal Equations + Second-order Effects +
Additional Curve-fitting parameters
Many semiconductor vendors expend a lot of effects to model
the devices they manufacture.(Standard : Level 3 SPICE)
Main SPICE DC parameters in level 1,2,3 in 1g n-well CMOS
process.
13
2.3 CMOS inverter DC characteristics
on turn
tp DD g gs
V V V V < =
in gs
V V =
tp DD g
V V V <
out ds
V V =
tp DD in
V V V <
(check Fig. 2.12)
14
Both transistors are on
=
2
fcv P
(Switching activity)
Solve for
dsp dsn
I I =
inp inn
V V =
(1) Region A.
tn in
V V 0
@ n-device is off , ) ( 0
dsp dsn
I I = =
p-device is in linear mode
@ 0 = =
dsp DD out
V V V
DD out
V V =
(2) Region B.
2
DD
in tn
V
V V
@ p-device : linear mode
n-device : saturation mode
n : ) ( ,
2
] [
2
n
n
ox
n
n
tn in
n dsn
L
W
t
V V
I
u
=
=
p :
DD in gs
V V V =
DD out ds
V V V =
15
]
2
) (
) )( [(
2
DD out
DD out tp DD in p dsp
V V
V V V V V I
=
tp gs
V V
ds
V
with ) (
p
p
ox
p
p
L
W
t
u
=
solve for
dsn dsp
I I =
2 2
) ( )
2
( 2 ) ( ) (
tn in
p
n
DD tp
DD
in tp in tp in out
V V V V
V
V V V V V V + =
(3) Region C. PMOS, NMOS : saturation
2
) (
2
tp DD in
p
dsp
V V V I =
2
) (
2
tn in
n
dsn
V V I =
with
dsn dsp
I I =
p
n
p
n
tn tp DD
in
V V V
V
+
+ +
=
1
by setting
p n
= and
tp tn
V V =
@ we have : one value only
@ possible
out
V
N-MOS
ds tn gs
out tn in
V V V
V V V
<
<
2
DD
in
V
V =
16
P-MOS
ds tp gs
out DD tp in DD
V V V
V V V V V
>
> ) ( ) (
tp in out
V V V <
Negative value
in
V is fixed at
2
DD
V
,
out
V varies
make the o/p transition very steep
(4) Region D.
tp DD in
DD
V V V
V
+ < <
2
P-MOS : saturation mode
N-MOS : linear mode
2
) (
2
1
tp DD in p dsp
V V V I =
]
2
) [(
2
out
out tn in n dsn
V
V V V I =
solve
dsp dsn
I I =
2 2
) ( ) ( ) (
tp DD in
n
p
tn in tn in out
V V V V V V V V =
(5) Region E.
tp DD in
V V V +
p-device off ( n-device is in linear mode )
0 =
dsp
I 0 =
dsn
I 0 =
out
V
see Table 2.3 for summary
tp in out tn in
V V V V V < <
17
2.3.1 ] n] p ratio ( watch Eq.(2.24) )
p
p
n
n
p
n
L
W
L
W
Note
5 . 1
T ( T ,g )
2.3.2 Noise Margin
This parameter allows us to determine the allowable noise
voltage on the input of a gate so that the output will not be
affected.
min min IH OH H
V V NM =
max max OL IL L
V V NM =
How to determine
L H
NM NM &
5 . 1
T I
ds
18
3 . 2 =
IL
V
3 . 3 =
IH
V
OL
V are more difficult (will be discussed later)
OH
V
(left as your exercise)
19
2.4 Static Load MOS inverters
Resistor-load inverter
Current-source-load inverter
2.4.1 Pseudo-NMOS inverter
Fast (constant current)
power-consuming P I but speed
20
2.6 The Transmission Gate
(PMOS)
(NMOS)
NMOS pass transistor
@
load
C is initially discharged
SS out
V V =
@ with S=0 ) (
SS
V
V V
gs
0 =
0 =
ds
I
out
V remains at
SS
V
t gs
V V V > = 5 , NMOS On V V V
out in
0 = =
@ S=1 ) (
dd
V
DD gs
V V = (initially)
> =
t gs
V V V 5 charge
out in
V V > , current from
in
V to
out
V
As the output voltage approaches
tn DD
V V ,
the n-device begins to turn off
21
S=0 (open circuit) ,
out
V remains at ) (
dd tn DD
V V V ,
where ) (
dd tn
V V denotes the
t
V at
dd s
V V = (body effect)
@ S=1
0 =
in
V
) (
dd tn DD out
V V V V =
n-device begin to conduct , and
out
V fall to
ss
V
Transmission of Logic 1 is degraded, ) (
tn DD
V V
Transmission of Logic 0 is not degraded, ) (
ss
V
PMOS pass transistor
S=1 ,(S=0) (open)
ss in
V V =
ss out
V V =
S=0 (close)
DD in
V V = , current
out
V to
DD
V
charge (C_load)
22
S=0 (close)
ss in
V V = ,
DD out
V V =
Discharge C_load
until through p-device
until ) (
ss tp out
V V V = , at which point the transistor stops
conducting
p-MOS passes good 1
p-MOS passes poor 0
Transmission gate can pass logic 1 and 0 without
degradation !
overall behavior
(1) S=0 ) 1 ( = S :
N,P devices are OFF
SS in
V V = , Z V
out
= (high impedance)
DD in
V V = , Z V
out
=
(2) S=1 ) 0 ( = S :
N,P devices are ON
SS in
V V = ,
SS out
V V = ,
DD in
V V = ,
DD out
V V =
Used in multiplexing element & latch element act as
voltage-controlled resistor connecting the input and output
Example to analyze a CMOS circuit Way 1=MAN
Way 2=SPICE
23
(1) Capacitor loaded circuit
Cload at Vss
* Cload is large
When S is ON NMOS , S = 0 1
PMOS , S = 1 0
Results: Currents of the pass transistor are monitored
@ Vout (transmission gate) , 5 ) ( = p V
gs
(constant current)
(PMOS)
It starts at saturation nonsaturation
as
dsp tp gsp
V V V >
@ Vout (transmission gate)
(NMOS)
always at saturation ,
gsn dsn
V V =
dsn tn gsn
V V V <
Rise
After
tn DD out
V V V , NMOS is off
24
Three regions of operation :
A
N saturation P saturation
tp out
V V <
B
N saturation P nonsaturation
tn DD out tp
V V V V < <
C
N off P nonsaturation
out tn DD
V V V <
a. Region A
p : constant current source
n : current varies inversely with Vout
b. Region B
both currents vary linearly (inverse) with Vout
c. Region C
p-current varies inverse linearly with Vout
Charge current amount
check :
SS DD out SS in
V V V V V = = ,
25
(2) Lightly loaded circuit (Cload is small)
Vout follows Vin very closely
Fig 2.35(d) n-current for 1 . 0 =
in out
V V
p-current
Three regions of operation :
a. n (linear) , p (off)
b. n (linear) , p (linear)
c. n (off) , p (linear)
can be monitored by using
SPICE
Combined