This article appeared in a journal published by Elsevier.

The attached
copy is furnished to the author for internal non-commercial research
and education use, including for instruction at the authors institution
and sharing with colleagues.
Other uses, including reproduction and distribution, or selling or
licensing copies, or posting to personal, institutional or third party
websites are prohibited.
In most cases authors are permitted to post their version of the
article (e.g. in Word or Tex form) to their personal website or
institutional repository. Authors requiring further information
regarding Elseviers archiving and manuscript policies are
encouraged to visit:
http://www.elsevier.com/copyright
Author's personal copy
Effect of CdS nanoparticles on uorescence from Sm
3+
doped SiO
2
glass
S. Rai
n
, L. Bokatial, P.J. Dihingia
Laser and Spectroscopy Laboratory, Department of Physics, Dibrugarh University, Dibrugarh 786004, India
a r t i c l e i n f o
Article history:
Received 12 July 2010
Received in revised form
23 November 2010
Accepted 17 January 2011
Available online 21 January 2011
Keywords:
Solgel technique
JO parameters
Radiative properties
Non-linear properties
Nanoparticles
a b s t r a c t
Sm
3+
doped CdS nanoparticles have been prepared by solgel method. The effect of annealing
temperatures and doping concentrations of CdS on the photoluminescence spectra of Sm
3+
were
studied. From the measurement of its optical absorption, three phenomenological JuddOfelt intensity
parameters (O
2
, O
4
, and O
6
) have been computed and used to parameterize the radiative properties.
The inuences of CdS on Sm
3+
ions were studied by uorescence spectroscopy. The uorescence
spectra revealed that the emission intensity of samarium increased considerably in the presence of CdS
nanoparticles. The evaluation of radiative properties of Sm
3+
containing CdS showed that the
4
G
5/2
-
6
H
7/2
transition in silica matrix had the potential to be a laser transition.
& 2011 Elsevier B.V. All rights reserved.
1. Introduction
There has been a great deal of interest in semiconductor
nanoparticles, quantum well, quantum wire, and quantum dots
chiey because of their electronic properties that strongly depend
upon crystal sizes smaller than bulk exciton. In the search of new
materials, semiconductor nanoparticles exhibit a wide range of
novel chemical and physical properties [1]. The size and shape
dependent optical properties of semiconductor nanocrystals ren-
der themselves as attractive candidates for tunable light absor-
bers and emitters in optoelectronics devices [2] and more
recently for uorescent probes of biological systems [3]. Since
the rapid advances in nanotechnologies, particularly the devel-
opment of new method of materials synthesis, there has been
growing interest in the spectroscopic properties and lumines-
cence dynamics of lanthanide ions in nanomaterials. More atten-
tion has been paid to the study of optical properties of nano-sized
particles dispersed in glass matrices from the viewpoint of
scientic interest and their application [4,5]. Rare-earths (RE)
are popular doping ions for various types of glasses; this is not
only due to the interesting spectroscopic properties of these ions
but also due to their potential application in the development of
optoelectronic devices such as ber ampliers, lasers, up-conver-
sion lasers and phosphors [68]. Hayakawa et al. [9] discussed the
interaction between CdS nanoparticles and Eu
3+
in silica xerogel.
They observed that CdS nanocrystals deposited on the surface of
Eu
3+
-doped silica xerogel greatly enhanced the luminescence of
Eu
3+
ions. Reisfeld et al. [10] formed CdS quantum dots in ZrO
2
lms together with lanthanide ions (Eu
3+
and Tb
3+
). The
increased intensity of the lanthanide ions was explained by
energy transfer (ET) from electronhole recombination in the
CdS to the RE ions. Various mechanisms of non-linear absorption
have been established in quantum connement systems.
Nanocomposite materials based on quantum dots and embedded
in transparent, stable polymer host membranes appear to hold
promise in view of their stability, versatility and convenience for
exploiting the fascinating possibilities of laser photonics. The
modication of materials subsequent to light absorption can be
induced by variety of different processes, examples of which can
be found in nanoparticle-doped polaritonic band gap materials,
where the so called two photon absorption (TPA) was observed by
Singh [1113]. Solgel silica glasses are considered as very good
materials for hosting rare-earth ions along with metal and
semiconductor nanoparticles. These glasses allow incorporation
of metal and semiconductor nanoparticles at low temperatures
with predetermined concentration [14]. In many cases, the nature
of the local environment around the dopant ions/molecules in the
gel or gel-derived glass is frequently a critical condition in
achieving the desired properties. Spectroscopic study of RE ions
in glasses provide information about the transition probability,
lifetime, branching ratio, etc. for the excited states of rare earth
ions that are essential for photonic devices like laser ampliers,
color displays, ampliers for ber optic communication systems,
etc. The luminescent efciency of these materials is often limited
by the dynamics of the lanthanides. It further depends on the
interaction with the host. Preparing nano-scale host materials can
change the physical properties of the host, which affects the
luminescence dynamics of an optically active dopant [15]. Recent
Contents lists available at ScienceDirect
journal homepage: www.elsevier.com/locate/jlumin
Journal of Luminescence
0022-2313/$ - see front matter & 2011 Elsevier B.V. All rights reserved.
doi:10.1016/j.jlumin.2011.01.006
n
Corresponding author. Tel.: +91373 2370396; fax: +91373 2370323.
E-mail address: srai.rai677@gmail.com (S. Rai).
Journal of Luminescence 131 (2011) 978983
Author's personal copy
studies continue to unravel the potential of low dimensional
semiconductors with strong quantum connement for non-linear
optical systems.
In the present work, the synthesis of Sm
3+
-doped CdS nano-
particles embedded in SiO
2
solgel matrix is reported. The
absorption, excitation and uorescence properties of these glasses
were investigated. From the absorption spectra, JuddOfelt para-
meters were determined, which provide us enough information
for calculating the radiative parameters. The quality conrmation
of the prepared glass was done by non-linear parameterization.
As optical properties of systems depend on the local structure and
bonding of dopant cations, knowledge of spectroscopic para-
meters of such materials become extremely important for their
optical applications.
2. Experimental procedure
Silica gels containing Sm
3+
and varying concentration of CdS
were prepared by solgel method [16,17] with tetraethyl ortho-
silicate (TEOS) as precursor in the presence of methanol and
water using nitric acid as catalyst. The dopants were added in the
form of cadmium nitrate, thiourea, and samarium nitrate
hexahydrate. The method is essentially a two-step process; rst
we introduced Sm
3+
ions into the precursor sols within the
framework of solgel technique based on the catalytic hydrolysis
of silicon-organic compounds with subsequent polycondensation
of RSiO fragments. Secondly, we introduced CdS nanoparticles
that were prepared from cadmium nitrate and thiourea by their
decomposition reaction and incorporated into Sm
3+
SiO
2
matrix
through annealing. The mixture (sol) is poured into polythene
petri dish. The gel was allowed to dry and solidify at room
temperature.
Absorption spectra for the prepared samples were recorded
with PD UVvis spectrophotometer (S-3100). Powder X-ray
diffraction (XRD) analysis was done on a Rigaku Mini,
Flex-2005G303 using CuKa radiation (l1.549

A). Excitation
and emission spectra were recorded on a FluoroMax-4P (Horiba
JobinYvon) Spectrouorometer. All optical measurements were
performed at room temperature.
3. Results and discussion
3.1. Physical properties of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass
The density of Sm
3+
doped CdS nanoparticles in SiO
2
solgel
glass was measured by the use of Archimedes principle, with
xylene as the immersion liquid. The glass refractive index was
determined on a precision refractometer using a sodium vapor
lamp with monobromonapthalene as the layer of contact between
the glass surface and the refractometer prism. From the measured
value of refractive index and density, physical properties like
molar volume, molar refractivity, electronic polarizability, ionic
radius, etc. were evaluated. The polarizability is one of the most
important properties that govern the non-linearity response of
the materials. The optical non-linearity is caused by electronic
polarization of the material upon exposed to intense light. Among
the theoretical expressions, the LorentzLorentz equation [18]
relates the polarizability, a
e
, to the refractive index, n, as follows
n
2
1
n
2
1
V
m

4
3p
N
A
a
e
where a
e
is the polarizability, N
A
is the Avogadro number and V
m
is the molar volume. The measured physical properties are
presented in Table 1.
3.2. Absorption spectra of CdS alone doped glass
The absorption and emission spectrum of CdS alone-doped
silica xerogel are shown in Fig. 1(a) and (b), respectively. The
absorption band at 424 nm is consistent with the formation of
CdS nanoparticles [19]. It is well known that the diameter of the
particles is related with the absorption edge. The blue shift of the
band gap energy is described by effective mass approximation
model, explained by Brus [20] and Kayanuma [21]. After excita-
tion at 370 nm, we observed the emission peak at 454 nm; the
emission arising from the electronhole recombination after
relaxation (band edge emission) markedly blue shifted relative
to that of the bulk CdS. Bulk CdS is reported to have a broad
emission with the emission maximum in the 500700 nm region
of the luminescence spectra [22]. The CdS diameter calculated
using effective mass approximation (EMA) model was found to be
2.9 nm. Fig. 2 illustrates the XRD pattern of Sm
3+
doped CdS glass,
showing (inset of Fig. 2) that the material was totally amorphor-
ous at room temperature, crystallization start at 800 1C. The 2y
values are 28.211 (1 0 1), 43.731 (1 1 0), 47.81 (1 0 3), 50.941
(2 0 0) and 52.861 (2 0 1), which are identied for hexagonal
CdS phase (JCPDS card-772306). The average size (D, in

A) is
Table 1
Important physical properties of Sm
3+
doped CdS nanoparticles in solgel SiO
2
glass.
Properties Value
Weight of the sample (gm) 2.183
Density (gm/cm
3
) 1.848
Refractive index 1.7675
Molar volume (V
m
) (cm
3
) 1.181
Molar refractivity (cm
3
) 0.4897
Electronic polarizability ( 10
25
cm
3
) 1.9404
Ions concentration ( 10
22
ions/cm
3
) 3.398
Ionic radius (

A)
124.45
Inter ionic distance (

A)
308.7
350 400 450 500 550
0.0
0.4
0.8
1.2
A
b
s
o
r
b
a
n
c
e

(
%
)

/

I
n
t
e
n
s
i
t
y

(
a
.
u
)
Wavelength (nm)
(b)
(a)
Fig. 1. (a) Optical absorption and (b) PL spectra of CdS alone doped glass.
S. Rai et al. / Journal of Luminescence 131 (2011) 978983 979
Author's personal copy
calculated from the line broadening using Scherrers relation
D
0:9l
bCosy
where l is the wavelength of CuKa radiation, b is the half-width
of the diffraction peak and y is the angle.
The corresponding crystallite size obtain in this way is 8.1 nm.
The sizes of the particles determined using EMA model and calcu-
lated from XRD using Scherrers formula are close to each other.
3.3. Absorption spectrum of Sm
3+
doped CdS nanoparticles in SiO
2
glass and JuddOfelt analysis
Fig. 3 shows the absorption spectrum of Sm
3+
:CdS doped
solgel glass. The band assignments are also indicated in Fig. 3.
The absorption spectra shows ve absorption bands centered at
364, 376, 404 and 417 nm corresponding to transition
4
D
3/2
,
6
P
7/2
,
6
P
3/2
and
4
P
5/2
, respectively, from the ground state
6
H
5/2
. With the
aid of absorption data of Sm
3+
:CdS doped glass, the oscillator
strengths were determined and then JuddOfelt intensity para-
meters were calculated for various transitions from ground
state [23,24]. The obtained results of the intensity parameters
can be used to have an insight into the local structure and
bonding in the vicinity of the rare-earth ions.
According to JO theory, the oscillator strength of several ff
transitions may be expressed by the sum of the product of three
intensity parameter O
t
t 2,4,6 times the squared matrix ele-
ments U
(t)
between the initial level J to the terminal level J
0
states.
Once the phenomenological parameters for the rare-earth doped
glass can be determined, it is used to predict the important
radiative properties of the lanthanide ions in the host matrix. In
the framework of the JO theory, the theoretical oscillator
strength f
cal
are expressed as a sum of the transition matrix
element involving intensity parameters O
t
, which depends on the
host matrix and is given by
f
cal

8p
2
mcn
2
2
2
3hl2J 19n

t 2,4,6
O
t
J:U
t
:J

2
1
where (2J +1) is the multiplicity of the lower states, l is the mean
wavelength of the transition, c is the velocity of light, m is
the electronic mass, h is the Planks constant and n is the
refractive index.
The experimental values of oscillator strength f
exp
of the
transition were evaluated from integrating absorbance for each
band and the relation is
f
exp
4:32 10
9

endn 2
where en is the decadic molar extinction co-efcient at wave
number n cm
1
and is expressed as u a
n
=2:303, a
n
expressed the
probability of absorption per unit time per unit concentration per
unit length of optical path, from LambertBeer law.
The phenomenological intensity parameters O
t
t 2,4,6 for
the forced electronic dipole transitions were obtained using
MATLAB (MATLAB R12) commands at a suitable step of the
calculation within the framework of the JO theory. The reduced
matrix elements obtained by Carnall et al. [25] and refractive
index n
d
1:7675 for the solgel glass were used in these
calculations. The JO intensity parameters (O
t
) along with
the experimental (f
exp
) and calculated oscillator strength (f
cal
) of
the Sm
3+
doped CdS nanoparticles in SiO
2
glass are presented in
Table 2. From the table, it is found that JO parameters have the
following trends O
2
4O
6
4O
4
. The large value of O
2
indicate the
presence of covalent bonding between rare earth ions and glass
host, as is reasonable.
20 30 40 50 60
10
20
30
40
50
60
70
(101)
(201)
(200)
(103)
(110)
C
o
u
n
t
s
/
S
2 Theta
Fig. 2. XRD pattern of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass at
800 1C. The inset shows the XRD pattern at xerogel.
340 360 380 400 420
0.85
0.90
0.95
1.00
1.05
1.10
1.15
4
D
3/2
6
P
7/2
6
P
3/2
4
P
5/2
I
n
t
e
n
s
i
t
y

(
a
.
u
)
Wavelength (nm)
Fig. 3. Absorption spectra of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass.
Table 2
JO intensity parameter and oscillator strength in Sm
3+
doped CdS nanoparticles in SiO
2
solgel glasses.
Transition from
6
H
5/2
Wavelength (nm) Energy (cm
1
) f
exp.
(f
exp
10
6
) f
cal
(f
exp
10
6
) JO intensity parameter (10
20
cm
2
)
O
2
O
4
O
6
4
D
3/2
364 27472.52 0.5008 0.3169 24.87 1.44 2.56
6
P
7/2
376 26595.74 1.5415 1.5455
6
P
3/2
404 24752.48 1.2435 1.7927
4
P
5/2
417 23980.82 0.8105 0.2713
S. Rai et al. / Journal of Luminescence 131 (2011) 978983 980
Author's personal copy
The JO parameter O
2
is very sensitive to the structure and it is
associated with the symmetry and covalency of the lanthanide
sites. On the other hand O
4
and O
6
values depends on the bulk
properties such as viscosity and dielectric of the media and also
affected by the vibronic transition of the rare earth ions bond to
the ligand atoms. In addition, the JO intensity parameters can be
used to calculate the spectroscopic quality (O
4
/O
6
) that is criti-
cally important in predicting the stimulated emission for the laser
active medium. These O
t
values have been used in the evaluation
of certain radiative properties.
3.4. Excitation spectrum of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass
The excitation spectrum of Sm
3+
doped CdS nanoparticles in
SiO
2
solgel glass is monitored for the emission wavelength at
595 nm. The observed bands are at 345, 362, 376, 403 and 416 nm
corresponding to the transition
6
H
5/2
-
4
K
17/2
,
4
D
3/2
,
6
P
7/2
,
4
F
7/2
and
4
P
5/2
within the 4f
n
conguration. The strongest band
observed for Sm
3+
doped CdS nanoparticles is at 362 nm and is
assigned to
6
H
5/2
-
4
D
3/2
.
3.5. Photoluminescence spectrum of Sm
3+
in solgel SiO
2
glasses
3.5.1. Effect of CdS concentration
SiO
2
is a polaritonic material [26], using which as host, we
have studied the optical properties of Sm
3+
ions in presence of
CdS nanoparticles. Fig. 4 shows the uorescence spectra of Sm
3+
doped CdS nanoparticles at room temperature at 399 nm excita-
tion. The three emission peaks centered at 561, 595 and 641 nm
and can be assigned to the transition
4
G
5/2
-
6
H
5/2
,
4
G
5/2
-
6
H
7/2
and
4
G
5/2
-
6
H
9/2
, respectively. The emission peak at 595 nm
corresponding to the transition
6
H
7/2
is most intense one. The
emission spectra of all the concentration Sm
3+
ions show the
peaks at same positions but with different intensities due to
change in concentration of CdS. From the uorescence spectra we
observed that the uorescence intensity of Sm
3+
increased as we
increase the concentration of CdS from 0.1 to 0.3 M. The observed
emission spectra are similar to those of the other reported Sm
3+
system [2731]. The emission intensity decreased above 0.3 M
concentration of CdS nanoparticles. The possible explanation is
that CdS nanoparticles doped in the network of SiO
2
Sm
3+
xerogel would increase the concentration of Si dangling and
oxygen vacancy in the network of the silica xerogel [32]. In this
way, more electron or hole can be easily excited and radiant
recombinations are increased. So the emission intensity of the
doped sample markedly increased. Addition to this the band edge
emission of CdS nanoparticles themselves should be one of the
contributing factors. While further increased in CdS concentration
may lead to the formation of clustering due to which uorescence
quenching occurred.
At this stage, we combine the JuddOfelt result obtained from
absorption data with recorded luminescence spectra to estimate
the radiative parameters of the uorescence level
6
G
5/2
of the
present glass. Considering only the electric-dipole probability, the
radiative transition probability between an initial manifold 9(S,L)J
to a nal manifold Su,LuJu

is given as
A S,LJ; Su,LuJu
64p
4
e
2
n
3h2J 1l
3
n
2
1
2
9

t 2,4,6
O
t
S,JJ:U
t
:S,LJ

2
3
The sum of AS,LJ; Su,LuJu for the states involved gives the
total radiative probability(A
T
), i.e. A
T

AS,LJ; Su,LuJu and 1=A

T
gives the radiative life times that determines the rate of depopu-
lation of any state. The relative intensities of lines originating
from the given excited states can be predicted using the branch-
ing ratio, which is dened as
b S,LJ; Su,LuJu
AS,LJ; Su,LuJu

AS,LJ; Su,LuJu
4
Finally the peak emission cross-section (s
P
) between an initial
manifold S,LJ

to a nal manifold Su,LuJu

is given as
s
P
l
P

l
P
4
8pcn
2
A S,LJ; Su,LuJu 5
where n is the refractive index at the l
P
peak uorescence
wavelength, Dl
eff
the effective bandwidth and c is the velocity
of light.
The calculated values of radiative parameters of Sm
3+
doped
CdS nanoparticles in SiO
2
solgel glass is compiled in Table 3. The
4
G
5/2
-
6
H
7/2
transition is found to have high cross-section and
have high optical gain. A large radiative lifetime is the indication
of strong emission at this band.
3.5.2. Annealing temperature effect
In addition, the emission intensity of Sm
3+
doped with CdS
nanoparticles in SiO
2
solgel glass increases with annealing
temperature and approaches maximum at 150 1C, and then it
550 600 650 700
0
200000
400000
600000
800000
1000000
6
H
9/2
6
H
7/2
6
H
5/2
(e)
(d)
(c)
(b)
(a)
I
n
t
e
n
s
i
t
y

(
a
.
u
)
Wavelength (nm)
Fig. 4. PL spectra of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass:
(a) Without CdS; (b) with 0.2 M CdS; (c) with 0.3 M CdS; (d) with 0.5 M CdS and
(e) with 0.7 M CdS.
Table 3
Transition probabilities, branching ratios for different transitions and radiative
lifetime of excited states of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass.
Transition
from
4
G
5/2
Wavelength
(nm)
Energy
(cm
1
)
Dl
(nm)
A (S
1
) b
R
(%)
s
P
10
20
(cm
2
)
6
H
5/2
561 17,825.31 3.96
6
H
7/2
595 16,806.72 5.65 822.41 84.1 77.47
6
H
9/2
641 15,600.62 5.78 155.49 15.9 19.2
A
T
S
1
977:9,t
R
ms 1:02
S. Rai et al. / Journal of Luminescence 131 (2011) 978983 981
Author's personal copy
decreases as the annealing temperature increases. This result can
be explained as follows: in the process of heat treatment the
concentration of hydroxyl groups (OH) that are present in the
glass will decrease, also during the annealing process various
defect centers were formed by the hydrolysis and condensation of
alkoxysilane precursor. The inuence of high energy vibration of
hydroxyl group on the emission of Sm
3+
ions was decreased and
the releasing energy from electron and hole produced by defect
recombination was transfered to the Sm
3+
ions that were
embedded in the network of silica xerogel and thus leads to the
improvement of Sm
3+
:CdS surroundings. As a result more
efcient luminescent center is formed and the emission intensity
increase with annealing temperatures [33]. When the Sm
3+
:CdS
was annealed at 200 1C, the emission intensity at 561, 595 and
641 nm decreased. However, the relative intensity of the peaks at
700 nm increased at 200 1C, while the peak at 650 nm the same
with a small shift towards lower wavelength (higher energy) was
observed. At higher temperature defect concentrations may
decrease in the network of the silica xerogel, which blocked the
energy transfer between the defects and Sm
3+
ions. Thermal
agitation can also change the co-ordination of rare earth ions in
the glass, resulting in strong multiphonon relaxation. This indi-
cates that the annealing temperature plays an important role
in the emission of Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass.
3.6. Non-linear properties
The RE doped glasses that are used for the amplication or
lasing purpose should have a low intensity dependency of its
parameters so that the higher intensity should not interfere with
and deteriorate the output response. Thus, the optical quality of
the materials can be known through the knowledge of its non-
linear properties. These properties are estimated from the refrac-
tive indices of materials at three different wavelengths (n
e
, n
Fu
and
n
Cu
in this case). Theoretical formulation to predict non-linear
refractive index (n
e
) changes in material was given by Boling and
Glass [34]. They suggested the necessity of small non-linear
refractive index to minimize environmental effect on dopant ions.
Glass [35], on other hand dened material to be optically active
on the basis of dispersive power. The materials that have an Abbe
number 1=dispersivepower of 50100 are considered optically
active materials. Following the procedure of [3437], we calcu-
lated the non-linear properties of the materials viz., Abbe number,
dispersive power, non-linear refractive index, non-linear refrac-
tive coefcient and susceptibility.
The mathematical expression for the Abbe number, the optical
quality-dening factor is
n
e

n
e
1
n
Fu
n
Cu
8
where n
e
, n
Fu
and n
Cu
are refractive indices, measured at the
corresponding wavelengths 546.1, 480 and 643.8nm, respectively.
The reciprocal of n
e
gives the dispersive power of the materials.
The non-linear refractive index (n
2
) is evaluated from Abbe
number and n
e
, using the expression
n
2

68n
e
1n
2
e
2
2
n
e

1:517
n
2
e
2ne1ue
6ne

9
Once the n
2
is estimated, the non-linear refractive index
coefcient (g) can be evaluated from
g
4p 10
7
n
2
cn
e
10
and the non-linear susceptibility is obtain from the expression
w
4
3
gcn
2
e
E
0
11
where c is the velocity of light in vacuum (m/s) and E
0
is the
permittivity of the free space (F/m).
The non-linear parameters of the Sm
3+
:CdS doped solgel SiO
2
glass was calculated using Eqs. (8)(11), to determine the optical
quality of the materials. All such parameters are evaluated and
compiled in Table 4. It is found that the non-linear refractive
index of the prepared glass is n
2
3:01355 10
13
esu,which is
quite high. This implies that the TPA must also get enhanced in
such materials. Similar result was observed by Nasu et al. [38].
The phenomenon of TPA occurs in nanoparticles doped polari-
tonic materials as reported by Singh [39].
4. Conclusion
Sm
3+
doped with CdS nanoparticles in SiO
2
solgel glasses has
been studied. In Sm
3+
doped CdS nanoparticles in SiO
2
solgel
glass; the O
t
intensity parameter, the radiative transition prob-
ability, the branching ratio and the uorescence lifetime were
calculated based upon the experimental absorption and emission
spectrum. By means of photoluminescence spectroscopy we
observed that uorescence of Sm
3+
doped with CdS nanoparticles
embedded in SiO
2
amorphous matrices was signicantly depen-
dent on concentration of CdS nanoparticles and annealing tem-
perature. From the above result we deduce that CdS nanoparticle
enters the glass as a network modier, increase the numbers
of non-bridging oxygen in the glass network and weaken the
SiO bonds.
In addition to this, the relatively high Abbe number (n
e
), low
non-linear refractive index (n
2
) and low non-linear refractive
co-efcient (g) value conrm the glass to be of a high optical
quality.
Acknowledgements
Authors acknowledge the nancial support of the Assam
Government Special Assistant Grant and UGC-SAP DRS. Authors
wish to thank Mr. Soumik Banerjee, Tezpur University for use of
XRD measurement equipment.
References
[1] A.P. Alivistors, J. Phys. Chem. 100 (1996) 13226.
[2] X. Peng, L. Manna, W. Yang, J. Wickham, E. Scher, A. Kadavanich,
A.P. Alivisators, Nature 404 (2000) 59.
[3] M. Bruchez, M. Moronne, P. Gin, S. Weiss, A.P. Alivistors, Science 281 (1998)
2013.
[4] L.E. Brus, Appl. Phys. A 53 (1991) 465.
[5] L. Yang, Q. Shen, J. Zhou, K. Jiang, Mater. Chem. Phys. 98 (2006) 125.
[6] E.M. Goldys, K. Drozdowicz-Tomsia, G. Zhu, H. Yu, S. JinJun, M. Motlar,
M. Godlewsk, Optia Aplicadeu XXXVI (No. 23) .
[7] R. Reisfeld, C.K. Jorgensen, in: Proceedings of the Laser and Excited States of
Rare Earths, 1977, Springer-Verlag, New York.
[8] M.J. Weber, J. Non-Cryst. Solids 123 (1990) 208.
[9] T. Hayakawa, S.T. Selvan, M. Nogami, J. Solgel Sci. Technol. 19 (2000) 779.
Table 4
Refractive index (n
e
), Abbe number (n
e
), dispersive power (1/n
e
), non-linear
refractive index (n
2
), non-linear refractive coefcient (g) and susceptibility (w) of
the Sm
3+
doped CdS nanoparticles in SiO
2
solgel glass.
n
e
n
Fu
n
Cu
n
e
1/n
e
n
2
(10
13
esu)
g
(10
4
m
2
/W)
w
(10
7
m
2
/V
2
)
1.7675 0.0144 53.2986 0.01876 3.01355 0.745 7.905
S. Rai et al. / Journal of Luminescence 131 (2011) 978983 982
Author's personal copy
[10] R. Reisfeld, M. Gaft., T. Saridarov, G. Panczer, M. Zelner, Mater. Lett. 45 (2000)
154.
[11] M.R. Singh, Phy. Lett. A 372 (2008) 5083.
[12] M.R. Singh, J. Appl. Phys. 106 (2009) 063106.
[13] M.R. Singh, J. Phys. B: At. Mol. Opt. Phys. 39 (2007) 5131.
[14] Al.L. Efros, M. Rosen, M. kuno, N. Nirmal, D.J. Norris, M.G. Bawendi, Phys. Rev.
B 54 (1996) 4843.
[15] E. Liftshitz, J. Dag, I. Litvin, G. Hodes, S. Gorer, R. Reisfeld, et al., Chem. Phys.
Lett. 288 (1998) 188.
[16] S. Hazarika, S. Rai, Opt. Mater. 27 (2004) 173.
[17] L. Bokatial, S. Rai, J. Lumin. 30 (2010) 1857.
[18] H. Rowson, Properties and Application of Glass, Elsevier, Amsterdam, 1980.
[19] T. Hayakawa, S.T. Selvan, M. Nogami, J. Lumin. 87-89 (2000) 532.
[20] L.E.J. Brus, Chem. Phys. 79 (1983) 5566.
[21] Y. Kayanuma, Phy. Rev. B 38 (1988) 9797.
[22] P. Sreekumari, N. Revaprasadu, T. Radhakrishnan, G.A. Kolawole, J. Mater.
Chem. 11 (2001) 1556.
[23] B.R. Judd, Phys Rev. 127 (1962) 750.
[24] G.S. Ofelt, J. Chem. Phys. 37 (1962) 73.
[25] W.T. Carnall, P.R. Fields, K. Rajnak, J. Chem. Phys. 59 (1968) 4424.
[26] H. Hogstrom, Optical studies of periodic microstructure in polar materials,
Acta Universities Upsaliensis, Digital comprehensive summaries of Uppsala
Dissertation from the faculty of Science and Technology, 189.96, 2006, ISBN-
91-554 6578-1.
[27] K. Annapurna, R.N. Dwivedi, P. Kundu, S. Buddhudu, Mater. Res. Bull. 38
(2003) 429.
[28] A. Agarwal, I. Pal, S. Sanghi, M.P. Aggarwal, Opt. Mater. 32 (2009) 339.
[29] S. Mathew, P.R. Rejikumar, A.K. Adiyodi, P.V. Jyothy, N.V. Unnikrishnan,
Mater. Chem. Phy. 112 (2008) 1061.
[30] R. Reisfeld., G. Panczer, A. Patra, M. Gaft, Mater. Lett. 38 (1999) 413.
[31] J. Maab, M. Wollenhaupt, H. Ahrens, P. Fr obel, K. B arner, J. Lumin 62 (1994) 95.
[32] P. Yang, C.F. Song, M.K. Lu, X. Yin, G.J. Zhou, D. Xu, D.R. Yuan, Chem. Phys. Lett.
345 (2001) 429.
[33] J. Mu, L. Xu, Xiangping Li, Zhizhen Xu, Q. Wei, S. Hua Sun, J. Kang, Disper. Sci.
Technol. 2 (2006) 23.
[34] N.L. Boling, A.J. Glass, J. Quantum Electron 14 (1978) 601.
[35] A.J. Glass, Laser Program Annual Report, Lawrence Livermore Labs., Report
No. UCRL. 50021-72, 1975.
[36] D. Milam, M. Weber, J. Appl. Phys. 47 (1976) 2499.
[37] D.C. Brown, High Peak Power Nd:Glass Laser System, Vol. 25, Springer-Verlag,
Berlin, 1985 Chapter 1, p. 48.
[38] H. Nasu, K. Kubodera, H. Kobayashi, M. Nakamura, K. Kamiya, J. Am. Ceram.
Soc. (USA) 4 (1990) 1794.
[39] M.R. Singh, Phys. Rev. B 75 (2007) 155427.
S. Rai et al. / Journal of Luminescence 131 (2011) 978983 983