IRF9640, RF1S9640SM

Data Sheet July 1999 File Number

2284.2

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power eld-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17522.

Features
11A, 200V rDS(ON) = 0.500 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRF9640 RF1S9640SM PACKAGE TO-220AB TO-263AB BRAND IRF9640 RF1S9640

Symbol
D

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.

Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE

JEDEC TO-263AB

DRAIN (FLANGE)

4-33

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF9640, RF1S9640SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF9640, RF1S9640SM -200 -200 -11 -7 -44 20 125 1 790 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3, 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 125oC

Electrical Specications
PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD

TEST CONDITIONS ID = -250A, VGS = 0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = -10V VGS = 20V ID = -6A, VGS = -10V (Figures 8, 9) VDS > ID(ON) x rDS(ON)MAX, ID = -6A (Figure 12) VDD = 0.5 x Rated BVDSS, ID -11A, RG = 9.1 VGS = -10V (Figures 17, 18) RL = 8.4 for VDSS = -100V RL = 6.1 for VDSS = -75V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11)

MIN -200 -2 -11 4 -

TYP 0.350 6 18 45 75 29 70 55 15 1100 375 150 3.5

MAX -4 25 250 100 0.500 22 68 90 44 90 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

4.5

nH

Internal Source Inductance

LS

Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad

G LS S

7.5

nH

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

RJC RJA Typical Socket Mount

1.0 62.5

oC/W oC/W

4-34

IRF9640, RF1S9640SM
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX -11 -44

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = -11A, VGS = 0V (Figure 13) TJ = 150oC, ISD = -11A, dISD/dt = 100A/s TJ = 150oC, ISD = -11A, dISD/dt = 100A/s

300 1.9

-1.5 -

V ns C

2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 9.8mH, RG = 25, peak IAS = 11A. See Figures 15, 16.

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0

Unless Otherwise Specied

-15

0.8 0.6 0.4 0.2 0

ID, DRAIN CURRENT (A) 0 50 100 150

-10

-5

0 0 50 100 150 TC, CASE TEMPERATURE (oC)

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE

1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 t 1, RECTANGULAR PULSE DURATION (s) t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 10 PDM

0.01 10-5

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-35

IRF9640, RF1S9640SM Typical Performance Curves

-100

Unless Otherwise Specied (Continued)

-50

VGS = -11V

VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -9V VGS = -8V

ID, DRAIN CURRENT (A)

100s 1ms 10ms 100ms

-10

ID, DRAIN CURRENT (A)

10s

-40

-30

-1 TC = 25oC

OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TJ = MAX RATED SINGLE PULSE

-20

VGS = -7V VGS = -6V VGS = -5V VGS = -4V -50

DC

-10

-0.1 -1

0 -10 -1000 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V)

-100 VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

-20

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

-16

PULSE DURATION = 80s VGS = -10V DUTY CYCLE = 0.5% MAX VGS = -9V

100 VGS = -8V VGS = -7V -10

VDS I D(ON) x rDS(ON) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

-12 VGS = -6V -8

125oC -1.0 25oC -55oC

-4

VGS = -5V VGS = -4V

0 0 -2 -4 -6 -8 -10 VDS, DRAIN TO SOURCE VOLTAGE (V)

-0.1 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

0.8 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 0.7

5s PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5

VGS = -10V, ID = -6A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

VGS = -10V 0.6 0.5 0.4 0.3 VGS = - 20V 0.2 0 0 -15 -30 -45 -60 -75 ID, DRAIN CURRENT (A)

2.0

1.5

1.0

0.5

0.0 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)

NOTE:

Heating effect of 5s pulse is minimal. FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

4-36

IRF9640, RF1S9640SM Typical Performance Curves

1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.10 1.05 1.00 0.95 0.90 0.85 -80 C, CAPACITANCE (pF) 1600

Unless Otherwise Specied (Continued)

2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS

1200

800

400

COSS CRSS

-40

40

80

120

160

10

20

30

40

50

TJ , JUNCTION TEMPERATURE (oC)

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

-100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = -55oC TJ = 25oC TJ = 125oC ISD, DRAIN CURRENT (A)

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 150oC

gfs, TRANSCONDUCTANCE (S)

-10 TJ = 25oC -1.0

-0.1 0 -10 -20 -30 -40 -50 -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1.4 -1.0 -1.2 -1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) -1.8

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

ID = -11A

VGS, GATE TO SOURCE (V)

-5

VDS = -40V -10 VDS = -100V VDS = -160V 0 20 40 60 80

Qg(TOT), Total GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-37

IRF9640, RF1S9640SM Test Circuits and Waveforms

VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0

VDD VDD

0V VGS

DUT tP IAS 0.01

IAS tP BVDSS VDS

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr 0 RL 10%

tOFF td(OFF) tf 10%

DUT VGS RG

VDD
+

VDS VGS 0

90%

90%

10% 50% PULSE WIDTH 90% 50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

-VDS (ISOLATED SUPPLY)

0 VDS

DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 Ig(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd

VGS

Qg(TOT)

Ig(REF)

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORMS

4-38

IRF9640, RF1S9640SM

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofce Headquarters

NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029

4-39