TIP100, TIP101, TIP102

(NPN); TIP105, TIP106,

TIP107 (PNP)
TIP101, TIP102, TIP106 and TIP107 are Preferred Devices

Plastic MediumPower
Complementary Silicon
Transistors

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Designed for generalpurpose amplifier and lowspeed switching

applications.
Features

High DC Current Gain

hFE

= 2500 (Typ) @ IC
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) TIP100, TIP105
= 80 Vdc (Min) TIP101, TIP106
= 100 Vdc (Min) TIP102, TIP107
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
PbFree Packages are Available*

DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 80 WATTS
MARKING
DIAGRAM
4

TO220AB
CASE 221A
STYLE 1
1

TIP10xG
AYWW

TIP10x
x
A
Y
WW
G

= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= PbFree Package

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005

August, 2005 Rev. 11

Publication Order Number:

TIP100/D

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

MAXIMUM RATINGS

Symbol

TIP100,
TIP105

TIP101,
TIP106

TIP102,
TIP107

Unit

VCEO

60

80

100

Vdc

Collector Base Voltage

VCB

60

80

100

Vdc

Emitter Base Voltage

VEB

5.0

Vdc

Collector Current Continuous

Peak

IC

8.0
15

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD

80
0.64

W
W/_C

Unclamped Inductive Load Energy (1)

30

mJ

Total Power Dissipation @ TA = 25_C

Derate above 25_C

PD

2.0
0.016

W
W/_C

TJ, Tstg

65 to + 150

_C

Rating

Collector Emitter Voltage

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Symbol

Max

Unit

Thermal Resistance, JunctiontoCase

Characteristic

RqJC

1.56

_C/W

Thermal Resistance, JunctiontoAmbient

RqJA

62.5

_C/W

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ORDERING INFORMATION
Device

Package

Shipping

TO220

50 Units / Rail

TO220
(PbFree)

50 Units / Rail

TO220

50 Units / Rail

TO220
(PbFree)

50 Units / Rail

TO220

50 Units / Rail

TO220
(PbFree)

50 Units / Rail

TO220

50 Units / Rail

TO220
(PbFree)

50 Units / Rail

TO220

50 Units / Rail

TO220
(PbFree)

50 Units / Rail

TO220

50 Units / Rail

TO220
(PbFree)

50 Units / Rail

TIP100
TIP100G
TIP101
TIP101G
TIP102
TIP102G
TIP105
TIP105G
TIP106
TIP106G
TIP107
TIP107G

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2

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

60
80
100

50
50
50

50
50
50

8.0

1000
200

20,000

2.0
2.5

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

Vdc

TIP100, TIP105
TIP101, TIP106
TIP102, TIP107

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)

TIP100, TIP105
TIP101, TIP106
TIP102, TIP107

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)

TIP100, TIP105
TIP101, TIP106
TIP102, TIP107

mAdc

ICEO

mAdc

ICBO

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

mAdc

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)

VCE(sat)

Vdc

BaseEmitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)

VBE(on)

2.8

SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

Vdc

DYNAMIC CHARACTERISTICS

TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

TC

4.0

80

3.0

60

2.0

40

1.0

20

PD, POWER DISSIPATION (WATTS)

TA

TC

TA
0

0
0

20

40

60

80

100

120

T, TEMPERATURE (C)

Figure 1. Power Derating

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3

140

pF

160

300
200

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

5.0
VCC
30 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
RC
MSD6100 USED BELOW IB 100 mA

SCOPE

V2
approx
+8.0 V

t, TIME (s)

TUT

RB
D1

51

0
V1
approx
12 V

8.0 k 120

25 ms

0.7
0.5
0.3

0.1
0.07
0.05
0.1

for td and tr, D1 is disconnected

and V2 = 0

tr, tf 10 ns
DUTY CYCLE = 1.0%

For NPN test circuit reverse all polarities.

tf

1.0

0.2

+4.0 V

tr

VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25C
0.2

td @ VBE(off) = 0 V
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

Figure 2. Switching Times Test Circuit

1.0
0.7
0.5

D = 0.5

0.3
0.2

0.2

PNP
NPN

ts

3.0
2.0

5.0 7.0

10

Figure 3. Switching Times

0.1
0.1
0.07
0.05

P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2

0.05
0.02

0.03
0.02
0.01
0.01

0.01
0.02

SINGLE PULSE
0.05

0.1

0.2

0.5

1.0

2.0
5.0
t, TIME (ms)

10

20

50

100

200

500 1.0 k

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (mA)

20
10

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150_C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown

5ms

5.0

100 ms

2.0

1ms
dTJ = 150C
c
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

1.0
0.5
0.2
0.1

TIP100, TIP105
TIP101, TIP106
TIP102, TIP107

0.05
0.02
1.0

2.0
5.0
10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

100

Figure 5. ActiveRegion Safe Operating Area

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4

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

h fe , SMALLSIGNAL CURRENT GAIN

10,000
5000
3000
2000

TC = 25C
VCE = 4.0 Vdc
IC = 3.0 Adc

1000
500
300
200
100
50
30
20
10
1.0

PNP
NPN
2.0

5.0

10
20
50 100
f, FREQUENCY (kHz)

200

500 1000

Figure 6. SmallSignal Current Gain

300
TJ = 25C
C, CAPACITANCE (pF)

200
Cob
100
Cib
70
50
PNP
NPN
30
0.1

0.2

0.5 1.0 2.0

5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

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5

50

100

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

NPN
TIP100, TIP101, TIP102

PNP
TIP105, TIP106, TIP107
20,000

20,000
VCE = 4.0 V

VCE = 4.0 V

5000

10,000
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

10,000
TJ = 150C
25C

3000
2000

55 C

1000

7000
5000

25C
3000
2000

700
500

300
200
0.1

300
200
0.1

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0

55 C

1000

500

0.2

TJ = 150C

10

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0

10

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain

3.0
TJ = 25C
2.6

2.2

IC = 2.0 A

4.0 A

6.0 A

1.8

1.4

1.0
0.3

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)

20

30

3.0
TJ = 25C
2.6
IC = 2.0 A

2.2

4.0 A

6.0 A

1.8

1.4

1.0
0.3

0.5 0.7 1.0

5.0 7.0 10
2.0 3.0
IB, BASE CURRENT (mA)

20

30

5.0 7.0

10

Figure 9. Collector Saturation Region

3.0

3.0
TJ = 25C

TJ = 25C
2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.5

2.0

1.5

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

1.0

0.5
0.1

0.5 0.7 1.0

2.0 3.0

5.0 7.0

VBE @ VCE = 4.0 V

1.5

VBE(sat) @ IC/IB = 250

1.0

VCE(sat) @ IC/IB = 250

0.2 0.3

2.0

VCE(sat) @ IC/IB = 250

0.5
0.1

10

0.2 0.3

IC, COLLECTOR CURRENT (AMP)

0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

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6

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AA

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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TIP100/D